Charge transport mechanism in a typical Au/CdTe Schottky diode

The charge transport mechanism in a typical Au/CdTe Schottky diode has been investigated. Evidence for different types of charge transport at different temperature regions has been observed. The dominant transport mechanism in the 100–300 K region is identified as the Poole–Frenkel type. The activation energy of the trap level detected in the 100–300 K temperature range shows a voltage dependence. The transport mechanism changes at a characteristic temperature of about 270 K.     

Temperature-dependent properties of organic-on-inorganic Ag/p-CuPc/n-GaAs/Ag photoelectric cell

A thin organic film of copper phthalocynanine (CuPc) as p-type semiconductor was deposited by vacuum evaporation on n-type GaAs single-crystal semiconductor substrate. Electrical, photoelectrical and frequency response of the cells were investigated at a temperature interval of 23–74 °C. Photoelectric characteristics were measured under semiconductor laser beam injection illumination (), while frequency response was investigated by laser beam modulated with a frequency range of 10 Hz–100 kHz.It was observed that cell parameters such as rectification ratio; threshold voltage; nonlinearity coefficient; junction, shunt and series resistances; diode ideality factor and power conversion efficiency were temperature-dependent. Moreover, experimental data showed that open-circuit voltage decreases with an increase in frequency whereas short-circuit AC current falls with frequency but remains constant as a function of temperature. It was further observed that the short-circuit DC current remained constant with an increase in frequency as well as temperature. Based on the experimental data an equivalent circuit of photoelectric cell was proposed to explain the observed behavior.     

Studies on the temperature dependence of I–V and C–V characteristics of electron irradiated silicon photo-detectors

The current transport mechanisms of n⁺–p silicon (Si) photo-detectors in different temperature and bias regions before and after irradiation with a dose of 350 kGy has been investigated and presented in this article. Temperature-dependent dark current–voltage (I–V) studies under forward and reverse bias were carried out for this purpose. In the temperature range studied, the dark current contribution in the low bias range is believed to be due to the generation-recombination of minority carriers in the space-charge region. Electron irradiation does not seem to have altered the dark current conduction mechanism. Capacitance–voltage (C–V) at various temperatures was measured to identify the presence of deep levels in the device.     

Transient analysis of a PV power generator charging a capacitor for measurement of the I–V characteristics

Measuring the I–V characteristics is of high importance since it can be considered as a quality and performance certificate for each PV generator. The most precise and inexpensive measuring method is represented in capacitor charging by the PV generator. Using the equivalent circuit of the PV generator with a capacitor as load and applying transient analysis on the circuit, we obtain the capacitor charging voltage and current as a function of time, as well as their differentials as a function of short circuit current and capacitor size. The derived equations facilitate the calculation of proper capacitance size for measuring the I–V characteristics, and considers the acquisition speed of the measuring system as demonstrated through two measurement samples in this paper. The capacitor size is directly and indirectly proportional to the short circuit current and open circuit voltage of the PV generator, respectively. Accordingly, the paper presents a capacitance calculation chart, which enables selecting the correct capacitance for measuring the I–V characteristics by a computerized data acquisition system.     

Monitoring current–voltage characteristics and energy output of silicon photovoltaic modules

Photovoltaic (PV) system designers use performance data of PV modules to improve system design and make systems more cost effective. The collection of this valuable data is often not done due to the high costs associated with data acquisition systems. In this paper, we report on the design of a low-cost current–voltage (I–V) measuring system used to monitor the I–V characteristics of PV modules. Results obtained from monitoring seven crystalline silicon modules between October 2001 and November 2002 are presented and discussed. Results obtained also show the value of being able to continuously monitor the current–voltage characteristics of PV modules.     

Optical, electrical and photovoltaic characteristics of organic semiconductor based on oxazine/n-Si heterojunction

In this work, the construction and photoelectrical characterization of p-type organic semiconductor oxazine (OXZ) in junction with n-type silicon semiconductor are presented. The Stokes shift between absorption and emission of oxazine was analyzed. The analysis of the spectral behavior of the absorption coefficient (α) of OXZ, in the absorption region revealed a direct transition, and the energy gap was estimated as 1.82 eV. From the current–voltage, I–V, measurements of the Au/OXZ/n-Si/Al heterojunction in the temperature range 300–375 K, characteristic junction parameters and dominant conduction mechanisms were obtained. This heterojunction showed a photovoltaic behavior with a maximum open circuit voltage, V_oc, of 0.42 V, short-circuit current density, J_sc, of 3.25 mA/cm², fill factor, FF, of 0.35 and power conversion efficiency, η, of 3.2% under 15 mW/cm² white light illumination.     

Selecting a suitable model for characterizing photovoltaic devices

The aim of this work is to evaluate a simple analytical method for extracting parameters involved in the photovoltaic module behaviour equation. Based on a series of experimental voltage–intensity curves obtained under various temperature and irradiance conditions, values are obtained to extract the model parameters, giving rise to adjustment errors at data points (short circuit current, open circuit voltage and voltage at maximum power point) and in the entire curve that are less than 1%. It has also been confirmed that assigning suitable values for series and parallel resistance avoids having to know beforehand the slope value of the characteristic curve, which is not normally indicated in the solar module specifications; this gives rise to good adjustment results between the experimental curves and the theoretical model, even when the theoretical parameters are adapted to other temperature and irradiance conditions.     

Equivalent model of monocrystalline, polycrystalline and amorphous silicon solar cells

The current–voltage (I–V) characteristics of monocrystalline, polycrystalline and amorphous silicon solar cells are measured in the dark. A two diodes equivalent model is used to describe the electronic properties of solar cells. The non-linear curve fitting of the dark I–V curves obtain besides the diode ideality factors and the reverse saturation currents, the series and shunt resistance of the solar cells. These parameters determine the fill factor and the efficiency of the solar cells.     

Effect of temperature and electron irradiation on the I–V characteristics of Au/CdTe Schottky diodes

The results of the studies on the effect of temperature and 8 MeV electron irradiation on the current–voltage (I–V) characteristics of the Au/CdTe Schottky diodes are presented in this article. Schottky diodes were prepared by evaporating Au onto n-type CdTe films electrodeposited onto stainless steel substrates. The forward and reverse current–voltage characteristics of these diodes were studied as a function of temperature. The diodes were subjected to 8 MeV electron irradiation at various doses and their effect on the I–V characteristics was studied. Some intrinsic and contact properties such as barrier height, ideality factor, and series resistance were calculated from the I–V characteristics. Diode ideality factor of the junctions were greater than unity. The ideality factor and the series resistance R_s increase with decrease in temperature. The conduction seems to be predominantly due to thermionic emission–diffusion mechanism. The resistance was found to increase with increasing dose. The leakage current, ideality factor and barrier height were found to be unaffected by electron irradiation up to, a dose of about 40 kGy.     

Investigation of the M/a-Si : H/c-Si structure as a Schottky contact with a diffusion barrier layer

The electrical and photoelectrical characteristics of the a-Si : H/c-Si (p-type) structure are measured. The structure is analysed as a Schottky diode in which the a-Si : H is considered as a diffusion barrier layer. The conventional h.f. C–V theory is simplified and adapted to the analysis, which allows to estimate the initial band bending at the c-Si interface, the built-in electric field in the a-Si : H layer and the differential density of the a-Si : H/c-Si interface states.     

Evaluation of the gap state distribution in a-Si:H by SCLC measurements

In this work, the analysis of the current density–voltage (J–V) characteristics of a good-quality a-Si:H n⁺–i–n⁺ structures has been studied as a function of temperature. The defect density within the intrinsic layer of the a-Si:H n⁺–i–n⁺ structure was determined using the den Boer approach to the analysis of the space charge limited current (SCLC). The den Boer analysis yields the density of states (DOS) in only a limited part of the band gap of the sample. We emphasize that in a good-quality sample, even if it is a thin one, the den Boer approach to SCLC gives correct information about the DOS. This information comes from the states near the conduction band tail, which reside in the upper part of the gap, because of the smaller activation energy of thin samples.     

Effects of illumination and Co γ-ray irradiation on the electrical characteristics of porous silicon solar cells

A new approach for hybrid metal–insulator–semiconductor (MIS) Si solar cells is adopted by Institute of Fundamental Problems for High Technology, Ukrainian Academy of Sciences. In order to interpret the effect of illumination and ⁶⁰Co γ-ray radiation dose on the electrical characteristics of solar cells are studied at room temperature. Before the solar cells are subjected to stressed irradiation six different illumination levels of forward and reverse bias I–V measurements are carried out at room temperature. The solar cells are irradiated with ⁶⁰Co γ-ray source irradiation, with a dose rate of 2.12 kGy/h and an over dose range from 0 to 500 kGy. Experimental results shows that both the values of capacitance and conductance increase with increasing illumination levels and give the peaks at high illumination levels. γ-ray irradiation induces an increase in the barrier heights Φ_b(C–V) which are obtained from reverse-bias C–V measurements, whereas barrier heights Φ_b(I–V) which are deducted from forward-bias I–V measurements remain essentially constant. This negligible change of Φ_b(I–V) is attributed to the low barrier height (BH) in regions associated with the surface termination of dislocations. Both the I–V and C–V characteristics indicate that the total-dose radiation hardness of the Si solar cells cannot be neglected according to illumination levels.     

Simulation of I–V characteristics of a PV module with shaded PV cells

The authors are studying a diagnostic method of a PV power generating system. We consider that the change of I–V characteristics can be utilized for the diagnosis. However, the report on the change of I–V characteristics is very little. In this paper, we investigate the relation between the output lowering due to shaded PV cells and the change of I–V characteristics, utilizing the computer simulation. It was proven from the simulation that I–V characteristics are changed by the condition of the shadow, which covered the module. The change of I–V characteristics of a PV module with shaded PV cells is discussed by the shift of the avalanche breakdown voltage of shaded PV cells.     

Silver-doped CdS films for PV application

CdS : Ag thin films were deposited by the chemical deposition method (solution growth), on SnO₂ thin transparent electrodes, to obtain n-type window layer for PV-cell. CdS thin films were doped with silver by an ion-exchange process in a neutral 0.025 M thiosulphate Ag-complex solution. Best results were achieved at immersion times of 20–30 s at room temperature. For the sake of comparison, the doping was performed on of the substrate surface, while the remaining part was left undoped. SnS_x thin layer was deposited on the top of such a n-type layer prepared in the same way the p-type layer was selected due to its simplicity of preparation and the possibility for variation of the band gap (E_g), by varying x in the compound. Ohmic contact was produced by graphite paste backelectrodes. Two different types of PV cells were produced on the same test sample, SnO₂/CdS : Ag–SnS_x/C and SnO₂/CdS–SnS_x/C, in order to study the influence of the Ag doping of CdS, on the PV cell parameters. Dark and light I–V characteristics were recorded for the two types of cells at several different light intensities. Considerable enhancement of all cell parameters, efficiency (η), fill factor (FF), diode factor (a), short-circuit current (I_sc), etc., was observed on the CdS : Ag-based sample. Spectral sensitivity in VIS-NIR part of the spectrum, recorded on the two types of cells, showed an improvement on the CdS : Ag-based PV cell.     

Role of hydrogen in electrical and structural characteristics of bilayer CdTe/Mn diluted magnetic semiconductor thin films

Bilayer thin films of diluted magnetic semiconductor CdTe/Mn have been prepared using vacuum thermal evaporation method at pressure of 10⁻⁵ torr. Annealing of bilayer thin films has been performed in atmospheric condition at constant temperature 400 °C for 1 hour. Hydrogenation of as-grown and annealed bilayer thin films has been performed by keeping these in hydrogenation cell. Structural characteristics of as-grown and heat treated thin films have been performed by X-ray diffractometer. Current–voltage characteristics of both as-grown hydrogenated and annealed hydrogenated bilayer thin films have been studied to find out the effect of hydrogenation. Surface topography of as-grown and annealed bilayer thin films has been confirmed by optical microscopy.     

Exact analytical solutions of the parameters of real solar cells using Lambert W-function

Exact closed-form solution based on Lambert W-function are presented to express the transcendental current–voltage characteristic containing parasitic power consuming parameters like series and shunt resistances. The W-function expressions are derived using Maple software. Different parameters of solar cell are calculated using W-function method and compared with experimental data of Charles et al. for two solar cells (blue and grey). Percentage accuracy of W-function method is also calculated to prove the significance of the method.     

Gettering effects by aluminum upon the dark and illuminated I–V characteristics of N–P–P silicon solar cells

Impurity gettering is an essential process step in silicon solar cell technology. A widely used technique to enhance silicon solar cell performance is the deposition of an aluminum layer on the back surface of the cell, followed by a thermal annealing. The aluminum thermal treatment is typically done at temperatures around 600°C for short times (10–30 min). Seeking a new approach of aluminum annealing at the back of silicon solar cells, a systematic study about the effect the above process has on dark and illuminated I–V cell characteristics is reported in this paper. We report results on silicon solar cells where annealing of aluminum was done at two different temperatures (600°C and 800°C), and compare the results for cells with and without aluminum alloying. We have shown that annealing of the aluminum in forming gas at temperatures around 800°C causes improvement of the electrical cell characteristics. We have also made evident that for temperatures below 250 K, the predominant recombination process for our cells is trap-assisted carrier tunneling for both annealing temperatures, but it is less accentuated for cells with annealing of aluminum at 800°C. For temperatures above 250 K, the recombination proceeds through Shockley–Read–Hall trap levels, for cells annealed at both temperatures. Furthermore, it seems from DLTS measurements that there is gettering of iron impurities introduced during the fabrication processes. The transport of impurities from the bulk to the back surface (alloyed with aluminum) reduces the dark current and increases the effective diffusion length as determined from dark I–V characteristics and from spectral response measurements, respectively. All these effects cause a global efficiency improvement for cells where aluminum is annealed at 800°C as compared to conventional cells where the annealing was made at 600°C.     

Improvement and validation of a model for photovoltaic array performance

Manufacturers of photovoltaic panels typically provide electrical parameters at only one operating condition. Photovoltaic panels operate over a large range of conditions so the manufacturer’s information is not sufficient to determine their overall performance. Designers need a reliable tool to predict energy production from a photovoltaic panel under all conditions in order to make a sound decision on whether or not to incorporate this technology. A model to predict energy production has been developed by Sandia National Laboratory, but it requires input data that are normally not available from the manufacturer. The five-parameter model described in this paper uses data provided by the manufacturer, absorbed solar radiation and cell temperature together with semi-empirical equations, to predict the current–voltage curve. This paper indicates how the parameters of the five-parameter model are determined and compares predicted current–voltage curves with experimental data from a building integrated photovoltaic facility at the National Institute of Standards and Technology (NIST) for four different cell technologies (single crystalline, poly crystalline, silicon thin film, and triple-junction amorphous). The results obtained with the Sandia model are also shown. The predictions from the five-parameter model are shown to agree well with both the Sandia model results and the NIST measurements for all four cell types over a range of operating conditions. The five-parameter model is of interest because it requires only a small amount of input data available from the manufacturer and therefore it provides a valuable tool for energy prediction. The predictive capability could be improved if manufacturer’s data included information at two radiation levels.     

Effect of illumination intensity and temperature on the I–V characteristics of n-C/p-Si heterojunction

Krishna et al. (Sol. Energy Mater. Sol. Cells 65 (2001) 163) have recently developed an heterojunction n-C/p-Si in order to achieve low cost and high-efficiency carbon solar cell. It has been shown that for this structure, the maximum quantum efficiency (25%) appears at wavelength λ (600 nm). In this paper, the dependence of I–V characteristics of this heterojunction solar cell on illumination intensity and temperature has been systematically investigated. An estimation of the stability of the solar cell with temperature has been made in terms of the temperature coefficient of I_sc and V_oc. The intensity variation study has been used to estimate the series resistance R_s of the solar cell.The effect of illumination intensity on I–V of n-C/p-Si heterojunction is more complex because the carrier lifetime and the carrier mobility of amorphous carbon are small and also because drift of carriers by built-in electric field plays an important role in these cells. Therefore, the conventional analytical expression for I–V characteristic is not applicable to such solar cells. These structures will not obey the principle of superposition of illuminated and dark current. The experimental results have been analysed by developing empirical relation for I–V.The temperature sensitivity parameters α, the change in I_sc and β, the change in V_oc per degree centigrade have been computed and are found to be 0.087 mA/°C and 1 mV/°C, respectively. This suggests that the heterojunction n-C/p-Si has good temperature tolerance. The value of series resistance has been estimated from the family of I–V curves at various intensities. The R_s is found to be ≈12 Ω, which is on the higher side from the point of view of photovoltaic application.     

A new method of determination of series and shunt resistances of silicon solar cells

A new method of measurement of series resistance R_s and shunt resistance R_sh of a silicon solar cell is presented. The method is based on the single exponential model and utilizes the steady state illuminated I–V characteristics in third and fourth quadrants and the V_oc–I_sc characteristics of the cell. It enables determination of values of R_sh and R_s with the intensity of illumination. For determination of R_s it does not require R_sh to be assumed infinite and realistic values of R_sh can be used. The method is very convenient to use and in the present study it has been applied to silicon solar cells having finite values of R_sh. We have found that R_sh is independent of intensity but the R_s decreases with both the intensity of illumination and the junction voltage.