SnO2纳米晶体的液相法可控合成研究进展

SnO2纳米晶体广泛应用于电极材料、气敏材料及催化材料.概述了纳米SnO2结构液相法可控合成技术的研究现状及进展,重点介绍了均匀沉淀法、微乳液法、溶胶-凝胶法和水热法4种主要合成方法,并结合各种方法的特点对其在纳米SnO2各应用领域的发展前景进行了分析.     

高温烧制导电掺锑二氧化锡纳米晶体

掺锑SnO2超细粉,特别是纳米晶体,用于透明导电膜和导电涂料具有广泛的应用前景.以SnCl4 *5H2O和SbCl3为原料,提出在有机相中控制pH值沉淀反应合成掺杂氢氧化锡后,结合阴离子交换树脂进行非水相离子交换除氯的方法,制得掺锑均匀的SnO2纳米晶体.运用X射线衍射、透射电镜等手段对其进行了表征,研究了热处理温度和掺锑浓度对粉末颗粒尺寸和电导的影响规律.结果表明,制得掺锑纳米晶体颗粒均匀,分散性好,非水相阴离子交换除氯离子的方法彻底除去了氯离子,提高了沉淀的稳定性,在缩短制备时间和减少溶剂用量的同时,使产物的回收率达到95%以上.     

阴离子交换合成氧化锌纳米晶体粉新方法及粉体光催化活性

采用一种新型的液相掺杂方法——非水相离子交换除氯法制备掺锑纳米氧化锌。该方法是在中性条件下,严格在控制含水量的低极性溶剂中进行的反应。氯离子的去除与水解是同时进行的,以保证掺杂的准确性及均匀性,提出的乙酸异戊酯共沸蒸馏法回收得到的纳米材料具有高分散性,TEM照片表明其保持了合成时的粒径和形貌。XRD图谱表明,未经煅烧的掺杂纳米氧化锌具有明显晶体衍射峰的晶体。掺杂后纳米氧化锌紫外可见吸收光谱发生了紫移,而紫外的吸收增强,表明锑原子已经掺杂到ZnO的晶格之中。这种半导体材料对甲基红（MR）的光催化降解作用表明,掺杂极大地提高了氧化锌纳米晶体的降解效率,90min内对甲基红（MR）的降解率可高达97％,与纯氧化锌相比,提高了70％以上。     

液相法合成纳米氧化锡概述

详细总结了采用溶胶-凝胶法、沉淀法、水（溶剂）热法等液相合成法制备纳米SnO2的研究成果和进展，展望了制备氧化锡纳米材料及其作为气敏材料的应用前景。     

液相法合成纳米氧化锡概述

详细总结了采用溶胶-凝胶法、沉淀法、水(溶剂)热法等液相合成法制备纳米SnO2的研究成果和进展,展望了制备氧化锡纳米材料及其作为气敏材料的应用前景。     

纳米晶体材料的合成

在材料科学和固体物理学中,早已发展和应用新的研究方法,并制备了具有新结构特征和性质的材料。金属玻璃、高温超导体或准晶体的发现代表了新结构特征和性质的材料。在纳米晶体材料的情况下,试图产生有新的原子结构和性质的固体。     

水热合成法制备纳米磷灰石晶体比较研究

用水热合成方法在不同条件下制备了纳米级磷灰石晶体。结果表明：磷灰石晶体含有0H^-、CO3^2-、Na^ 、HPO4^2-离子；水热合成时温度越高，反应时间越长，磷灰石结晶度越高，晶体生长得更大更长；磷灰石沉积物老化时间越短，表面活性越高，水热处理时更容易生长成较大的晶体；压力条件下水热处理后的磷灰石晶体呈棒状，常压下水热处理的呈针状，且长径比较大。     

液相法制备纳米镍粉研究进展

详细介绍了液相法制备纳米镍粉的研究进展,并对液相法制备纳米镍粉的一些影响因素进行了探讨,例如反应物和还原剂的浓度、温度、表面活性剂等。对比分析了一些制备方法的特点,同时简单地介绍了纳米镍粉的应用前景和发展趋势。     

液相法制备纳米镍粉研究进展

详细介绍了液相法制备纳米镍粉的研究进展．并对液相法制备纳米镍粉的一些影响因素进行了探讨．例如反应物和还原剂的浓度、温度、表面活性剂等。对比分析了一些制备方法的特点．同时简单地介绍了纳米镍粉的应用前景和发展趋势。     

液相法合成纳米氧化锌的研究进展

综述了近年来合成纳米氧化锌的液相方法,包括沉淀法、水热法、溶剂热法、溶胶-凝胶法、微乳液法等.分析了这几种方法的优缺点和最新的研究进展.同时指出,微波、超声等新技术也引入到液相法纳米氧化锌的制备工艺中,纳米氧化锌合成的未来发展方向是合成技术综合化.     

表面活性剂在合成金纳米晶溶胶中的应用

综述了表面活性剂在合成金纳米晶溶胶中应用的最新进展,主要就十二烷基硫酸钠(SDS)、聚乙烯吡咯烷酮(PVP)、硫醇类物质及十六烷基三甲基溴化铵(CTAB)等表面活性剂作了较详细地讨论.     

Facile Synthesis of Nanocrystal Tin Oxide Hollow Microspheres by Microwave-Assisted Spray Pyrolysis Method

Tin oxide(SnO_2) hollow microspheres with narrow size distribution were prepared by a facile one-pot microwave-assisted spray pyrolysis method. The effect of temperature on microstructural and optical properties was investigated by X-ray diffraction(XRD), scanning electron microscope(SEM), high resolution transmission electron microscope(HRTEM), and UV-Vis spectrophotometer(UV-Vis), respectively.The SnO_2 particles obtained at and above 700?C are tetragonal rutile structure with high purity and smooth surface morphology, which consist of well-interconnected SnO_2 nanocrystallines and the shell thickness was about 26 nm. UV-Vis absorption values were quite low in visible light region and high in ultraviolet region, indicating the possible utilization for optical purpose of the as-prepared SnO_2. The band gaps were 3.88 and 4.07 e V for SnO_2 synthesized at 700 and 800?C, respectively. As compared to traditional electrical heating or flame modes, microwave heating introduced here demonstrates a highefficiency, environmentally benign, and time-and energy-saving technology to synthesize advanced powders.     

超临界抗溶剂法制备金属氧化物纳米颗粒的研究进展

具有纳米尺寸的金属氧化物因其优异的催化性能而在电化学、生物医学和其他科学领域备受瞩目.目前,制备金属氧化物纳米颗粒的传统方法主要有水热法、溶剂热法、沉淀法、微乳液法、溶胶凝胶法和模板法等.然而,这些方法往往因成本偏高、存在有机溶剂残留等问题而限制了其进一步发展.为此,迫切需要开发一种制备金属氧化物纳米颗粒的新型技术来弥补传统方法的不足,促进金属氧化物纳米颗粒制备技术的发展.超临界流体是温度和压力处在物质的临界温度和临界压力之上的一种处于特殊状态的流体,其兼具气体和液体的某些性质,具有独特的溶剂化特征、近乎于零的表面张力、低粘度、易调变,具有接近液体的密度与溶解度和类似气体的扩散性质.近年来,超临界流体技术由于其温和的操作条件和独特的性质而广泛应用于化工、环境、制药等领域.其中,超临界抗溶剂法造粒因具有操作条件温和、制备颗粒大小可控、颗粒无有机溶剂残留等优点而备受瞩目.金属氧化物纳米颗粒因其本身的尺寸效应,在催化、传感、生物医学等领域具有较为良好的应用前景.本文介绍了超临界抗溶剂法制备金属氧化物纳米颗粒的基本原理、制备流程及应用,并着重探讨了不同温度、压力和溶液浓度对超临界抗溶剂法制备金属纳米颗粒粒径大小以及形貌的影响,最后对该方法面临的问题和挑战以及发展前景进行了展望.     

Transparent and Flexible Cellulose Nanocrystal/Reduced Graphene Oxide Film for Proximity Sensing

The rapid development of touch screens as well as photoelectric sensors has stimulated the fabrication of reliable, convenient, and human‐friendly devices. Other than sensors that detect physical touch or are based on pressure sensing, proximity sensors offer controlled sensibility without physical contact. In this work we present a transparent and eco‐friendly sensor made through layer‐by‐layer spraying of modified graphene oxide filled cellulose nanocrystals on lithographic patterns of interdigitated electrodes on polymer substrates, which help to realize the precise location of approaching objects. Stable and reproducible signals generated by keeping the finger in close proximity to the sensor can be controlled by humidity, temperature, and the distance and number of sprayed layers. The chemical modification and reduction of the graphene oxide/cellulose crystal composite and its excellent nanostructure enable the development of proximity sensors with faster response and higher sensitivity, the integration of which resolves nearly all of the technological issues imposed on optoelectronic sensing devices.     

Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

The electronic functionalities of metal oxides comprise conductors, semiconductors, and insulators. Metal oxides have attracted great interest for construction of large‐area electronics, particularly thin‐film transistors (TFTs), for their high optical transparency, excellent chemical and thermal stability, and mechanical tolerance. High‐permittivity (κ) oxide dielectrics are a key component for achieving low‐voltage and high‐performance TFTs. With the expanding integration of complementary metal oxide semiconductor transistors, the replacement of SiO₂ with high‐κ oxide dielectrics has become urgently required, because their provided thicker layers suppress quantum mechanical tunneling. Toward low‐cost devices, tremendous efforts have been devoted to vacuum‐free, solution processable fabrication, such as spin coating, spray pyrolysis, and printing techniques. This review focuses on recent progress in solution processed high‐κ oxide dielectrics and their applications to emerging TFTs. First, the history, basics, theories, and leakage current mechanisms of high‐κ oxide dielectrics are presented, and the underlying mechanism for mobility enhancement over conventional SiO₂ is outlined. Recent achievements of solution‐processed high‐κ oxide materials and their applications in TFTs are summarized and traditional coating methods and emerging printing techniques are introduced. Finally, low temperature approaches, e.g., ecofriendly water‐induced, self‐combustion reaction, and energy‐assisted post treatments, for the realization of flexible electronics and circuits are discussed.