Fabrication of resonant-tunneling diodes by Sb surfactant modified growth of Si films on CaF/sub 2//Si

Molecular beam epitaxy growth of Si thin films on CaF/sub 2//Si(111) substrates has been studied. A surfactant-modified solid-phase epitaxy method, where the room temperature Si deposition was followed by annealing under Sb flux, resulted in a continuous, smooth epitaxial crystalline Si film with a sharp (/spl radic/3/spl times//spl radic/3)R30/spl deg/ reconstruction and a surface roughness of 0.15-nm rms for a 2.8-nm Si thin film. This growth technique was used to fabricate CaF/sub 2//Si/CaF/sub 2/ double-barrier resonant tunneling diodes in SiO/sub 2/ windows patterned on Si(111) substrates. A negative differential resistance (NDR) peak was found at /spl sim/0.35 V at 77 K, and the current density at the NDR peak was estimated to be 3-4 orders of magnitude higher than in earlier reports.     

Morphology and texture evolution of nanostructured CaF2 films on amorphous substrates under oblique incidence flux

The morphology and biaxial texture of vacuum evaporated CaF(2) films on amorphous substrates as a function of vapour incident angle, substrate temperature and film thickness were investigated by scanning electron microscopy, x-ray pole figure and reflection high energy electron diffraction surface pole figure analyses. Results show that an anomalous [220] out-of-plane texture was preferred in CaF(2) films deposited on Si substrates at < 200?°C with normal vapour incidence. With an increase of the vapour incident angle, the out-of-plane orientation changed from [220] to [111] at a substrate temperature of 100?°C. In films deposited with normal vapour incidence, the out-of-plane orientation changed from [220] at 100?°C to [111] at 400?°C. In films deposited with an oblique vapour incidence at 100?°C, the texture changed from random at small thickness (5 nm) to biaxial at larger thickness (20 nm or more). Using first principles density functional theory calculation, it was shown that [220] texture formation is a consequence of energetically favourable adsorption of CaF(2) molecules onto the CaF(2)(110) facet.     

离子注入形成YSi2埋层的电镜研究

本文主要采用离子注入的方法制备“Ｓｉ／ＹＳｉ２／Ｓｉ”异质结构，并以电子显微镜为手段研究ＹＳｉ２埋层的形成及ＹＳｉ２／Ｓｉ界面的微观结构。我们发现ＹＳｉ２埋层以“［００１］ＹＳｉ２／／［１１１］Ｓｉ”为取向关系在Ｓｉ基体中择优生长，而且注入法合成的ＹＳｉ２不存在空位有序结构。     

Simultaneous uptake of ammonium and phosphate ions by compounds prepared from paper sludge ash

Al-containing CaO-SiO(2)-H(2)O phases were prepared by hydrothermal treatment of mixtures of paper sludge ash (PSA) with various silica and calcia sources and their properties were determined with particular reference to the simultaneous uptake of ammonium and phosphate ions, which are implicated in the eutrophication of lakes and ponds. After examination of various silica and calcia sources, Ca(OH)(2) and SiO(2) sol were selected as the most appropriate starting materials. Dry milling was found to be superior to wet milling in avoiding contamination from the milling media during mixing. Nine samples with three different Ca/Si ratios and Al(2)O(3) contents were prepared with various mass ratios of Ca(OH)(2), PSA and SiO(2). The chemical compositions of the hydrothermal products of these mixtures moved towards the tieline of CaSiO(3)-PSA, with respect to the starting compositions. The major phase formed in all samples was poorly crystalline C-S-H(I), with hydroxysodalite also formed in the Al-containing mixtures. All the products showed a capacity for the simultaneous uptake of ammonium and phosphate ions. The saturated sorption capacities calculated from the Langmuir equation ranged from 0.9 to 2.4mmol/g for the ammonium ion and from 3.3 to 5.2mmol/g for the phosphate ion. Since the sorption capacities for both ions increased with increasing Ca contents of the product, substitution of Ca(2+) for NH(4)(+) and the formation of calcium phosphate phases such as apatite and brushite by precipitation are thought to be the main sorption mechanisms.     

Preparation of low-crystalline apatite nanoparticles and their coating onto quartz substrates

We prepared low-crystalline apatite nanoparticles and coated them onto a surface of a Au/Cr-plated quartz substrate by the electrophoretic deposition (EPD) method or by using a self-assembled monolayer of 11-mercaptoundecanoic acid (SAM method). Low-crystalline apatite nanoparticles around 10?nm in size with extremely low contents of undesirable residual products were obtained by adding (NH(4))(2)HPO(4) aqueous droplets into a modified synthetic body fluid solution that contained Ca(CH(3)COO)(2). The apatite nanoparticles were successfully coated by either the EPD method or the SAM method; the nanoparticle coating achieved by the SAM method was more uniform than that achieved by the EPD method. The present SAM method is expected to be a promising technique for obtaining a quartz substrate coated with apatite nanoparticles, which can be used as a quartz crystal microbalance device.     

Electrogenerated chemiluminescence. 72. Determination of immobilized DNA and C-reactive protein on Au(111) electrodes using tris(2,2'-bipyridyl)ruthenium(II) labels

Anodic electrogenerated chemiluminescence (ECL) with tri-n-propylamine (TPrA) as a coreactant was used to determine DNA and C-reactive protein (CRP) by immobilizations on Au(111) electrodes using tris(2,2'-bipyridyl)ruthenium(II) (Ru(bpy)(3)(2+)) labels. A 23-mer synthetic single-stranded (ss) DNA derived from the Bacillus anthracis with an amino-modified group at the 5' end position was covalently attached to the Au(111) substrate precoated with a self-assembled thiol monolayer of 3-mercaptopropanoic acid (3-MPA) in the presence of 1-ethyl-3-(3-dimethylaminopropyl) carbodiimide hydrochloride (EDAC) and then hybridized with a target ssDNA tagged with Ru(bpy)(3)(2+) ECL labels. Similarly, biotinylated anti-CRP species were immobilized effectively onto the Au(111) substrate precovered with a layer of avidin linked covalently via the reaction between avidin and a mixed thiol monolayer of 3-MPA and 16-mercaptohexadecanoic acid on Au(111) in the presence of EDAC and N-hydroxysuccinimide. CRP and anti-CRP tagged with Ru(bpy)(3)(2+) labels were then conjugated to the surface layer. ECL responses were generated from the modified electrodes described above by immersing them in a TPrA-containing electrolyte solution. A series of electrode treatments, including blocking free -COOH groups with ethanol amine, pinhole blocking with bovine serum albumin, washing with EDTA/NaCl/Tris buffer, and spraying with inert gases, were used to reduce the nonspecific adsorption of the labeled species. The ECL peak intensity was linearly proportional to the analyte CRP concentration over the range 1-24 microg/mL. CRP concentrations of two unknown human plasma/serum specimens were measured by the standard addition method based on this technique.     

Copper metallization of hydroxyl-modified amorphous Si:C:H films

X-ray photoelectron spectroscopy (XPS) was used to examine the initial stages of copper deposited by Physical vapor deposition (PVD), or sputter deposition, interacting with amorphous silicon:carbon:hydrogen (a-Si:C:H) films and hydroxyl modified amorphous silicon:carbon:hydrogen (a-Si:C:H/OH) films under Ultra-high vacuum (UHV) conditions. Amorphous-Si:C:H films were formed by condensing vinyltrimethylsilane (VTMS) on a titanium substrate (temperature ≤90 K) followed by electron beam bombardment (500 eV), and annealing to 300 K in UHV. Amorphous Si:C:H/OH films were formed by condensing H₂O on the condensed VTMS multilayer (≤90 K) followed by electron beam bombardment (500 eV) and annealing to 300 K in UHV. The stoichiometry of the unmodified and modified a-Si:C:H films was determined by XPS to be C_4.5:Si and C_4.3:O_0.44:Si, respectively. XPS measurements of PVD Cu on the modified film at 300 K indicate initial conformal growth with Cu(I) and Cu(0) formation at the Cu/Si:C:H/OH film interface. At higher Cu coverages, only Cu(0) was observed. In contrast, 3-dimensional island formation (Volmer–Weber growth) of Cu(0) was observed on the unmodified film. Annealing both the modified and unmodified films up to 800 K in UHV produced no significant change in the Cu(3p)/Cu(2p_3/2) intensity ratio, indicating negligible Cu diffusion through the film into the titanium substrate below 800 K.     

Effect of NaOH on the vitrification process of waste Ni-Cr sludge

This study investigated the effect of NaOH on the vitrification of electroplating sludge. Ni, the major metal in the electroplating sludge, is the target for recovery in the vitrification. Sludge and encapsulation materials (dolomite, limestone, and cullet) were mixed and various amounts of NaOH were added to serve as a glass modifier and a flux. A vitrification process at 1450 °C separated the molten specimens into slag and ingot. The composition, crystalline characteristics, and leaching characteristics of samples were measured. The results indicate that the recovery of Ni is optimal with a 10% NaOH mass ratio; the recoveries of Fe, Cr, Zn, Cu, and Mn all exhibited similar trends. The results of the toxicity characteristic leaching procedure (TCLP) show that leaching characteristics of the slag meet the requirements of regulation in Taiwan. In addition, a semi-quantitative X-ray diffraction analysis revealed that the main crystalline phase of slag changed from Ca(3)(Si(3)O(9)) to Na(4)Ca(4)(Si(6)O(18)) with a NaOH mass ratio of over 15%, because the Ca(2+) ions were replaced with Na(+) ions during the vitrification process. Na(4)Ca(4)(Si(6)O(18)), a complex mineral which hinders the mobility of metals, accounts for the decrease of metal recovery.     

Implementation of atomically defined field ion microscopy tips in scanning probe microscopy

The field ion microscope (FIM) can be used to characterize the atomic configuration of the apices of sharp tips. These tips are well suited for scanning probe microscope (SPM) use since they predetermine the SPM resolution and the electronic structure for spectroscopy. A protocol is proposed for preserving the atomic structure of the tip apex from etching due to gas impurities during the period of transfer from the FIM to the SPM, and estimations are made regarding the time limitations of such an experiment due to contamination with ultra-high vacuum rest gases. While avoiding any current setpoint overshoot to preserve the tip integrity, we present results from approaches of atomically defined tungsten tips to the tunneling regime with Au(111), HOPG (highly oriented pyrolytic graphite) and Si(111) surfaces at room temperature. We conclude from these experiments that adatom mobility and physisorbed gas on the sample surface limit the choice of surfaces for which the tip integrity is preserved in tunneling experiments at room temperature. The atomic structure of FIM tip apices is unchanged only after tunneling to the highly reactive Si(111) surface.     

Fluoride incorporation in hydroxyapatite/gelatin nanocomposite

The incorporation of fluoride ion into hydroxyapatite (HAp)/gelatin (GEL) nanocomposite was investigated. The F(-) ion incorporation into OH(- )site of HAp phase was an energetically active process, which could be confirmed from the spray solution reaction. The precursors of Ca(2+) in water and phosphates in aqueous gelatin were mixed in the humidified air chamber by air spray, and then the precipitates were aged in a reactor. The F(-) ion precursor was dissolved in the starting solution of Ca(OH)(2) in water, and the resulted Ca(OH, F)(2) complex droplets induced the formation of stable fluoroapatite (F, OH)Ap. The reaction kinetics could be assumed from TEM morphology with ED, XRD and FT-IR analysis.     

Ballistic electron emission spectroscopy on Ag/Si devices

In this work we report on ballistic electron emission spectroscopy (BEES) studies on epitaxial layers of silver grown on silicon surfaces, with either a Si(111)-(7 ×?7) or Si(100)-(2 ×?1) surface reconstruction. The experiments were done at low temperature and in ultra-high vacuum (UHV). In addition, BEES measurements on polycrystalline Ag films grown on hydrogen-terminated H:Si(111)-(1 ×?1) and H:Si(100)-(2 ×?1) surfaces were performed. The Schottky barrier heights were evaluated by BEES. The results are compared to the values for the barrier height reported for macroscopic Schottky diodes. We show that the barrier heights for the epitaxial films substantially differ from the values measured on polycrystalline Ag films, suggesting a strong effect of the interface on the barrier height.     

Well-defined nanoclusters as fluorescent nanosensors: a case study on Au(25) (SG)(18)

The fluorescence of nanoparticles has attracted much attention in recent research, but in many cases the underlying mechanisms are difficult to evaluate due to the polydispersity of nanoparticles and their unknown structures, in particular the surface structures. Recent breakthroughs in the syntheses and structure determinations of well-defined gold nanoclusters provide opportunities to conduct in-depth investigations. Devising well-defined nanocluster sensors based on fluorescence change is of particular interest not only for scientific studies but also for practical applications. Herein, the potential of the glutathionate (SG)-capped Au(25) nanocluster as a silver ion sensor is evaluated. The Ag(+) detection limit of approximately 200 nM, based on the fluorescence enhancement and good linear fluorescence response in the silver ion concentration range from 20 nM to 11 μM, in combination with the good selectivity among 20 types of metal cations, makes Au(25) (SG)(18) a good candidate for fluorescent sensors for silver ions. Further experiments reveal three important factors responsible for the unique fluorescence enhancement caused by silver ions: 1) the oxidation state change of Au(25) (SG)(18) ; 2) the interaction of neutral silver species (Ag(0) , reduced by Au(25) (SG)(18) (-) ) with Au(25) (SG)(18) ; and 3) the interaction of Ag(+) with Au(25) (SG)(18.) Experiments demonstrate the very different chemistry of hydrophobic Au(25) (SC(2) H(4) Ph)(18) and hydrophilic Au(25) (SG)(18) in the reaction with silver ions. This work indicates another potential application of gold nanoclusters, offers new strategies for nanocluster-based chemical sensing, and reveals a new way to influence nanocluster chemistry for potential applications.     

Quantum growth of magnetic nanoplatelets of Co on Si with high blocking temperature

Self-organized Co nanoplatelets with a singular height, quantized lateral sizes, and unique shape and orientation have been fabricated on a template consisting of ordered Al nanocluster arrays on Si(111)-7 x 7 surfaces. Despite their small volume (a few nm(3)), these nanomagnets exhibit an unusually high blocking temperature (>100 K). The perpendicular direction for easy magnetization, the high blocking temperature, the size tunability, and the epitaxial growth on Si substrates make these nanomagnets important for applications in information technology.     

Preparation of AlN thin films by nitridation of Al-coated Si substrate

AlN thin films have been grown on Al-coated Si(100) and Si(111) substrates by using nitridation in high-purity nitrogen ambient, where the Al layer was previously deposited on Si by ultra-high vacuum (UHV) electron beam evaporation. The temperature of nitridation was found to play an important role in the formation of AlN films. XRD results showed AlN films formed by nitridation at 1000°C for 30 min exhibited good crystallinity with the preferred orientation of (002) for both Si(111) and Si(100) cases. Other analysis techniques, like Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy have been used to evidence the formation and purity of the AlN films. Scanning electron microscope observations of the films revealed a closely-packed granular texture.     

Nitrogen ion induced nitridation of Si(111) surface: Energy and fluence dependence

We present the surface modification of Si(111) into silicon nitride by exposure to energetic N₂⁺ ions. In-situ UHV experiments have been performed to optimize the energy and fluence of the N₂⁺ ions to form silicon nitride at room temperature (RT) and characterized in-situ by X-ray photoelectron spectroscopy. We have used N₂⁺ ion beams in the energy range of 0.2–5.0 keV of different fluence to induce surface reactions, which lead to the formation of Si_xN_y on the Si(111) surface. The XPS core level spectra of Si(2p) and N(1s) have been deconvoluted into different oxidation states to extract qualitative information, while survey scans have been used for quantifying of the silicon nitride formation, valence band spectra show that as the N₂⁺ ion fluence increases, there is an increase in the band gap. The secondary electron emission spectra region of photoemission is used to evaluate the change in the work function during the nitridation process. The results show that surface nitridation initially increases rapidly with ion fluence and then saturates.     

Single molecular orientation switching of an endohedral metallofullerene

The single molecular orientation switching of the Tb@C82 endohedral metallofullerene has been studied by using low-temperature ultrahigh vacuum (UHV) scanning tunneling microscopy (STM). An octanethiol self-assembled monolayer (SAM) was introduced between Tb@C82 and the Au111 substrate to control the thermal rotational states of Tb@C82. Scanning tunneling spectroscopy (STS) of Tb@C82 on an octanethiol SAM at 13 K demonstrated hysteresis including negative differential conductance (NDC). This observed hysteresis and NDC is interpreted in terms of a switching of the Tb@C82 molecular orientation caused by the interaction between its electric dipole moment and an external electric field.     

Surface modification and patterning using low-energy ion beams: Si-O bond formation at the vacuum/adsorbate interface.

Modification of hydroxyl-terminated self-assembled monolayer (HO-SAM) surfaces by collision of low-energy (15 eV) hyperthermal Si(CH3)3+ ions is shown to lead to Si-O bond formation and terminal trimethylsilyl ether formation. Modification was verified by in situ mass spectrometry using chemical sputtering with CF3+ ions (70 eV), ex situ secondary ion mass spectrometric analysis (12 kV Ga+ primary ion beam), and through X-ray photoelectron spectroscopy by monitoring Si (2s). The nature of the surface modification was further established by analysis of synthetic SAM surfaces made up of mixtures of the trimethylsilyl-11-mercapto-1-undecane ether and various proportions of the hydroxyl-terminated mercaptan (11-mercapto-1-undecanol). These mixed surfaces, as well as the spectroscopic data, indicate that ca. 30% of the hydroxyl chains are covalently modified at saturation coverage. Analogous surface transformations are achieved using Si(CH3)2F+ and Si(CH3)2C6H5+.     

Characterisation of products of tricalcium silicate hydration in the presence of heavy metals

The hydration of tricalcium silicate (C(3)S) in the presence of heavy metal is very important to cement-based solidification/stabilisation (s/s) of waste. In this work, tricalcium silicate pastes and aqueous suspensions doped with nitrate salts of Zn(2+), Pb(2+), Cu(2+) and Cr(3+) were examined at different ages by X-ray powder diffraction (XRD), thermal analysis (DTA/TG) and (29)Si solid-state magic angle spinning/nuclear magnetic resonance (MAS/NMR). It was found that heavy metal doping accelerated C(3)S hydration, even though Zn(2+) doping exhibited a severe retardation effect at an early period of time of C(3)S hydration. Heavy metals retarded the precipitation of portlandite due to the reduction of pH resulted from the hydrolysis of heavy metal ions during C(3)S hydration. The contents of portlandite in the control, Cr(3+)-doped, Cu(2+)-doped, Pb(2+)-doped and Zn(2+)-doped C(3)S pastes aged 28 days were 16.7, 5.5, 5.5, 5.5, and <0.7%, respectively. Heavy metals co-precipitated with calcium as double hydroxides such as (Ca(2)Cr(OH)(7).3H(2)O, Ca(2)(OH)(4)4Cu(OH)(2).2H(2)O and CaZn(2)(OH)(6).2H(2)O). These compounds were identified as crystalline phases in heavy metal doping C(3)S suspensions and amorphous phases in heavy metal doping C(3)S pastes. (29)Si NMR data confirmed that heavy metals promoted the polymerisation of C-S-H gel in 1-year-old of C(3)S pastes. The average numbers of Si in C-S-H gel for the Zn(2+)-doped, Cu(2+)-doped, Cr(3+)-doped, control, and Pb(2+)-doped C(3)S pastes were 5.86, 5.11, 3.66, 3.62, and 3.52. And the corresponding Ca/Si ratios were 1.36, 1.41, 1.56, 1.57 and 1.56, respectively. This study also revealed that the presence of heavy metal facilitated the formation of calcium carbonate during C(3)S hydration process in the presence of carbon dioxide.     

Formation and characterization of semiconductor Ca2Si layers prepared on p-type silicon covered by an amorphous silicon cap

Formation of calcium silicide on three types of templates: Si(111)7 × 7, 2D Mg₂Si, and 3D Mg₂Si, was studied during Ca deposition at 120 °C in situ by Auger and electron energy loss spectroscopy, and by differential optical reflectance spectroscopy. A continuous Ca₂Si layer is formed on 2D and 3D Mg₂Si templates; but, on an atomically clean silicon surface (Si(111)7 × 7), a mixture of Ca₂Si with another Ca silicide was found. The growth of a Si cap layer over the Ca silicide layers at about 100 °C studied by in situ methods demonstrated the full embedding of Ca silicide in amorphous silicon, independent of the used template. Transmission electron microscopy, Rutherford backscattering spectrometry, atomic force microscopy, and electrical characterization of Schottky junctions revealed the Ca₂Si and Mg₂Si nanoparticles and the redistribution of Mg and Ca during the silicon cap growth and its effect on the electronic properties of the structures. Reproduction of the experiments on higher doped and better purity substrates is needed to understand better the role of Mg- and Ca-related defects, and defects of silicon generated by the growth process.     

Au stabilization and coverage of sawtooth facets on Si nanowires grown by vapor-liquid-solid epitaxy

Si nanowires grown in UHV by Au-catalyzed vapor-liquid-solid epitaxy are known to exhibit sidewalls with {112}-type orientation that show faceting. To understand the origin of the faceting, Au induced faceting on Si(112) surfaces was studied in situ by spot-profile-analyzing low-energy electron diffraction. With increasing Au coverage at 750 degrees C, the Si(112) surface undergoes various morphological transformations until, at a critical Au coverage of about 3.1 x 10 (14) atoms/cm (2), a phase consisting of large (111) and (113) facets forms, similar in structure to the nanowire sidewalls. This phase is stable at larger Au coverages in equilibrium with Au droplets. We suggest that Si nanowire surfaces exhibit this structure, and we derive the Au coverage on the two types of facets.