国内首条碳化硅晶片中试生产线建成

据报道，中科院物理研究所与北京天科合达蓝光半导体有限公司合作研发出了具有自主知识产权的第二代碳化硅晶体生长炉，进一步优化了具有自主知识产权的碳化硅晶体生长工艺，使晶体质量的稳定性和产率得到提高。同时，在国内建立了首条完整的从切割、研磨到化学机械抛光的碳化硅晶片中试生产线，建成了百级超净室，并开发出碳化硅晶片表面处理，清洗、封装等工艺技术，使产品达到了即开即用的水准。[第一段]     

国内外碳化硅标准比对分析

为了探明碳化硅国内外标准的情况和差异,本文调研、分析并选择了中国国家标准和行业标准、国际标准及美国、欧洲、日本、俄罗斯、罗马尼亚相关标准,选择碳化硅物理特性、碳化硅磨料化学分析方法、含碳化硅耐火材料化学分析方法、碳化硅晶片产品规格进行标准比对。通过比对,得出结论：（1）国外有关碳化硅标准,都制定了碳化硅产品的理化性能标准,有些指标我国国家标准和部分企业实际质量控制中未列入检测控制指标,如：振实密度、比表面积、清洁度、韧性、电导率;（2）针对碳化硅粒度砂与微粉产品,发达国家根据其用途不同,按照对口专用、精密化、综合利用原则,分成了多种牌号专用产品,专用产品的企业标准指标要求也不同,使生产者和使用者找到了最佳结合点,产品产生了最大效益;（3）从碳化硅磨料的化学分析方法标准比对和含碳化硅耐火材料化学分析方法标准比对结果看,我国国家标准的比对指标相较于美国、欧盟及日本等发达国家及地区而言较为完整;（4）从碳化硅晶片产品相关标准比对结果看,我国国家标准对碳化硅单晶抛光片以及晶片检测方面制定了相关标准,而美国、欧盟、日本等发达国家及地区没有涉及。针对碳化硅外延片表面缺陷的测试环境,我国国家标准相较...     

日本开发成功高质量p型氧化锌单晶基板

日本九州工业大学的中尾基副教授和日本COLMO公司成功开发出高质量、低成本制备氧化锌晶片的技术。首先利用硅基板上的碳化硅缓冲层制作n型氧化锌单晶薄膜基板，然后用CVD法在基板上沉积p型氧化锌单晶薄膜。这种制备方法在世界尚属首次。基板的电阻率非常低，达到实用化水平。该基板有望替代市场巨大的氮化镓基板，还可应用于各种传感器及光电转换元件等。     

硅基SiC薄膜制备与应用研究进展

碳化硅（SiC）材料具有极为优良的物理、化学及电学性能,可满足在高温、高腐蚀等极端条件下的应用,碳化硅还是极端工作条件下微机电系统（MEMS）的主要候选材料,成为国际上新材料、微电子和光电子领域研究的热点。同时,碳化硅有与硅同属立方晶系的同质异形体,可与硅工艺技术相结合制备出适应大规模集成电路需要的硅基器件,因此用硅晶片作为衬底制备碳化硅薄膜的工作受到研究人员的特别重视。本文综述了近年来国内外硅基碳化硅薄膜的研究现状,就其制备方法进行了系统的介绍,主要包括各种化学气相沉积（Chemical vapor deposition,CVD）法和物理气相沉积（Physical vapor deposition,PVD）法,并归纳了对硅基碳化硅薄膜性能的研究,包括杨氏模量、硬度、薄膜反射率、透射率、发光性能、电阻、压阻、电阻率和电导率等,以及其在微机电系统传感器、生物传感器和太阳能电池等领域的应用,最后对硅基碳化硅薄膜未来的发展进行了展望。     

行业信息

正直径2 in碳化硅晶片通过鉴定由河北同光晶体有限公司承担的直径2 in高质量碳化硅晶片项目日前在北京通过鉴定。该项技术具有自主知识产权,目前申请专利达到28项,其中8项已获得实用新型专利授权,专家组一致认为该项技术达到国际先进水平。目前碳化硅单晶研究正朝着大尺寸、高质量的方向发展。同光晶体公司具有完整的碳化硅单晶生长、晶体切割、晶片加工产业线。预计项目投产后销     

立体微型器件的微制造技术及其在微机电系统(MEMS)的应用

综述了近年来与微型机电系统（MEMS）相关的材料微制造和微加工技术的最新研究进展.重点介绍了如何利用硅晶片作为微型模具来制备压电陶瓷和热电材料的微型柱状阵列结构和反应烧结碳化硅微型转子等微制造技术,并展望了材料微制造技术在研制微型医疗器件和微型移动能源方面的应用前景.     

碳化硅多孔陶瓷制备技术研究进展

分别对碳化硅多孔陶瓷的主要制备方法进行了阐述，分析了这些制备方法的主要优缺点，并指出将来的研究重点应是高性能碳化硅多孔陶瓷的低成本制备技术及其应用领域的进一步拓展。另外，各种制备工艺条件同碳化硅多孔陶瓷性能之间的内在联系研究也应该进一步深化。     

金刚石/碳化硅复合材料的研究进展

金刚石/碳化硅复合材料综合了碳化硅与金刚石的优点，具有高热导率、低热膨胀系数、高比刚度、高硬度以及耐磨损等优异性能，具有广阔的应用前景，是陶瓷基复合材料领域研究的重点之一。金刚石/碳化硅复合材料的制备最早采用高温高压法，该方法可以有效避免金刚石颗粒石墨化带来的有害影响。随着技术的不断发展，出现了多种制备方法。不同的制备工艺下，金刚石/碳化硅复合材料内部的主要相含量、界面相结构及微观组织等因素决定了复合材料的整体性能水平。本文综述了国内外金刚石/碳化硅复合材料的研究与发展现状，从制备方法、性能特点、微观组织及界面反应机制等方面进行了阐述，分析了当前金刚石/碳化硅复合材料研究存在的问题，并对该复合材料的未来发展方向进行了展望。     

碳化硅吸波性能改进的研究

采用三种不同的方法对碳化硅粉在2-18GHz范围的吸波性能进行了改进。化学还原的方法制备出粒度约为0.2μm左右的超细镍粉，与碳化硅混和，在一定的配比下制备成吸波涂层材料大幅度改善了吸波性能。吸波涂层最小反射率能够达到-23.59dB，提出了微观层复合的设想，并利用化学镀的方法对碳化硅粉表面进行了改性处理，使金属镍沉积在碳化硅颗粒的表面，材料在合理配比下的最小反射率为-22.07dB，采用宏观层复合的方法，将超细镍粉涂层与碳化硅涂层复合制备成多层吸波材料，改善了吸收峰值和吸收带宽。     

化学气相反应制备碳化硅纳米线

用硅粉、二氧化硅和石墨粉作原料，在无催化剂的条件下，在1400℃下用高温化学气相反应法制备了碳化硅纳米线，并用高分辨扫描电镜观察了所得碳化硅纳米线的形貌。所得碳化硅纳米线直径为100-500nm，长度可达几百微米。还提出了描述碳化硅纳米线的生长机理。     

碳化硅泡沫陶瓷的制备

碳化硅泡沫陶瓷具有气孔率高、热稳定性好等优良性能,被广泛用作金属溶液过滤器、高温气体和离子交换过滤器、催化剂载体等.重点介绍了碳化硅泡沫陶瓷的种类,阐述了碳化硅泡沫陶瓷的制备方法和影响碳化硅泡沫陶瓷产品性能的因素,展望了碳化硅泡沫陶瓷的发展前景.     

硅熔体中碳化硅熔解与硅晶体中碳化硅生长

工业生产的太阳能电池用多晶硅锭内部常出现碳化硅夹杂,影响太阳能电池的转换效率,特别是严重威胁硅片的切割生产过程。本文研究了硅熔体中碳化硅熔解与硅晶体中碳化硅沉淀生长特性。在熔解实验中发现:即使在碳显著过饱和的情况下,碳化硅仍会熔解在1450℃的硅熔体中,同时熔体中易形核处发生新的碳化硅颗粒析出。在1350℃下进行了硅料中碳化硅沉淀的固相生长实验,结果表明晶体硅中碳化硅沉淀的高温固态生长十分缓慢。这一特性得到理论计算证实,它表明固相生长不可能是多晶硅锭中出现大颗粒碳化硅的原因。     

Single crystalline silicon carbide nanorods synthesized by hydrothermal method

A new and simple hydrothermal process has been used to synthesize single crystalline silicon carbide nanorods. The synthesized silicon carbide nanorods have a length of about 1 μm and nearly same diameter of about 40 nm. We have observed that the nanorods possess a well-defined single crystalline structure with a thin layer of amorphous silica on the surface. The X-ray diffraction analysis demonstrates that the structure of silicon carbide nanorods is β-SiC. Raman shifts of the silicon carbide nanorods are discussed and the oxide-assisted growth mechanism is proposed to explain the formation and growth of silicon carbide nanorods.     

碳化硅晶须发展及应用概况

综合论述了ＳｉＣ晶须的高强，高硬，高化学稳定性以及其耐磨耐腐蚀和良好的抗高温氧化性等特点；评述了ＳｉＣ晶须的各种合成方法和国内外发展应用状况。     

碳化硅颗粒增强Al基复合材料的新型制备工艺

综述了碳化硅增强铝基复合材料的几种主要制备工艺,重点阐述了高能超声半固态复合法制备SiCp/Al复合材料.首先用渗流法制备SiC体积分数高的SiCp/Al预制块,进行SiC预分散,然后将预制块加入处于半固态温度条件下的铝合金熔体中,最后导入超声波进行搅拌.此法很好地改善了增强颗粒与基体之间的润湿性,使SiC在基体中均匀...     

纳米碳化硅基复相陶瓷的分散和烧结技术研究进展

碳化硅陶瓷是一种高性能的陶瓷,具有高强度、高硬度、耐高温、耐化学腐蚀、高热导率、低热膨胀以及低密度等性能,广泛应用于各个工业领域以及航空航天领域.从纳米复相陶瓷制备过程中的分散方法以及碳化硅基陶瓷的烧结方法与烧结助剂等方面详细论述了目前有关碳化硅基纳米复相陶瓷的研究进展.     

Oxidation behavior of green coke-based carbon–ceramic composites incorporating micro- and nano-silicon carbide

The oxidation resistance of the carbon–ceramic composites developed using green coke-based carbon and carbon black as carbon source, boron carbide, and micro- and nano-silicon carbide was carried out in the temperature range of 800 to 1,200 °C. Silicon carbide particulate as such and silicon carbide obtained by the reaction of green coke and silicon provided micro silicon carbide while silicon and carbon black and sol–gel silica and carbon black used as silicon carbide precursors led to the formation of nano-silicon carbide. The oxidation resistance of these composites at 800 to 1,200 °C for 10 h showed that the size of the silicon carbide influenced the oxidation resistance. The weight gain due to protective coating formed on oxidation was higher in composites containing nano-silicon carbide as compared to the composites containing micro silicon carbide.     

Improvements of the microstructure and erosion resistance of boron carbide with additives

A series of test materials were produced from boron carbide (B₄C) powders with additions of either boron in amounts up to 60 wt.%, silicon (4 wt.%) or silicon and silicon carbide (4 wt.% and 30 wt.%, respectively). The powder mixtures were densified by encapsulation hot-isostatic pressing. The test materials where evaluated in dry particle erosion tests with silicon carbide grits. Particular attention was given to the relation between the microstructure and the composition.It was found that boron additions up to 20 wt.%, decreased the average grain size and reduced the porosity of the boron carbide. A material with 60 wt.% boron exhibited very low porosity and supreme resistance to particle erosion. The erosion resistance was also significantly improved by additions of silicon and silicon carbide.The favorable effects of boron, silicon and silicon carbide are discussed in terms of their influence on microstructural parameters, such as grain size, porosity, grain boundaries and reduction of free carbon.     

Large-scale fabrication of lightweight Si/SiC ceramic composite optical mirror

Silicon carbide relative to other more traditional materials offers some excellent characteristics including high stiffness, high toughness, low toxicity, low thermal distortion and potential cost and schedule advantages. These properties make silicon carbide very attractive for a variety of applications in precision optical structures, especially when considering space-borne application. In this paper, lightweight silicon carbide mirror was prepared for the large pointer mirror or the primary mirror of the high resolution camera. Reaction-bonded silicon carbide was used to fabricate the 250-mm diameter circular mirror with 30-mm thickness and 1.72-kg weight and the 120-mm hexagonal mirror with 15-mm thickness and 0.23-kg weight. Open back honeycomb lightweight structure was produced to gain 35.1 and 24.3 kg/m² areal density, respectively. Polishing technique different from optical glass polishing was introduced to achieve less than 0.3λ at 632.8-nm p–v surface error and less than 5-nm rms surface roughness. The stress and displacement under factual condition were estimated using finite element analysis method. The reaction-bonded silicon carbide was a ceramic matrix of free silicon containing a bimodal distribution of silicon carbide grains. The green body of silicon carbide grains and free carbon was fabricated by slip casting. Inserts were used to form the complex lightweight structure. During silicon vapor infiltration process, silicon reacted with carbon to form new silicon carbide phase and the pores of green body disappeared. The resulting material was single phase alpha silicon carbide. The results indicated that reaction-bonded silicon carbide can be used as optical mirror substrates. Currently, experiments are under way to fabricate a large-scale lightweight Si/SiC optical mirrors with larger than 50-cm diameter.     

Manufacturing of Silicon Carbide Knit Fabrics

Knit fabric textile structures are processed from silicon carbide multifilament fiber rovings. The minimum bending radius of the various single silicon carbide fibers is determined from loop tension test in order to derive boundary conditions for fiber bending in the knitting process. The processing conditions for knitting are modified in order to reduce buckling and friction acting on the silicon carbide fiber rovings. Fiber knit fabrics are fabricated with a modified 2 Tempi pattern chain which leads to high flexible manufacturing. Compared to woven silicon carbide fabric structures the knitted fiber perform offers a superior flexibility, wider range of pore size and a higher degree of drapability.