共查询到18条相似文献,搜索用时 78 毫秒
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炭/炭复合材料抗氧化涂层是该材料可否用于高温结构件的关键。将人工神经网络用于CVDSiC抗氧化涂层的建模,试图解决该过程影响因素复杂、数学模型难于建立、无法对整个过程进行有效预测和控制的问题。初步探讨表明,采用人工神经网络建模,可以比较确切与全面地反映CVDSiC涂层过程的影响因素和内在规律,预测的工艺参数与沉积速率的关系同实验结果吻合较好,由此证实了将人工神经网络应用于抗氧化涂层制备系统是可行的 相似文献
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为提高C/C复合材料的高温抗氧化性能,以聚碳硅烷(PCS)浸渍裂解法和Si,Mo,W粉浆料刷涂反应法在C/C复合材料表面制备SiC-MoSi2-WSi2复合涂层,借助X射线衍射仪、扫描电镜等分析手段,对涂层的微观形貌、组织结构及物相进行分析研究,优化涂层制备工艺,考察了涂层的高温抗氧化性能,分析了抗氧化机理.制备的SiC-MoSi2-WSi2复合涂层厚度200 μm左右,主要由SiC,MoSi2,WSi2构成.1500℃氧化试验结果表明复合涂层的静态氧化失重率较SiC单层涂层降低50%以上,较大地改善了C/C复合材料的抗氧化性能. 相似文献
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Pardeep Kumar Gianchandani Valentina Casalegno Federico Smeacetto Monica Ferraris 《International Journal of Applied Ceramic Technology》2017,14(3):305-312
A MoSi2/Si composite obtained in situ by reaction of silicon and molybdenum at 1450°C in Ar flow is proposed as pressure‐less joining material for C/SiC and SiC/SiC composites. A new “Mo‐wrap” technique was developed to form the joining material and to control silicon infiltration in porous composites. MoSi2/Si composite joining material infiltration inside coated and uncoated C/SiC and SiC/SiC composites, as well as its microstructure and interfacial reactions were studied. Preliminary mechanical strength of joints was tested at room temperature and after aging at service temperatures, resulting in interlaminar failure of the composites in most cases. 相似文献
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《Journal of the European Ceramic Society》2019,39(1):79-84
In order to improve the oxidation resistance of Cf/Cs produced by chemical vapour infiltration, a multilayer coating based on silicon carbide and molybdenum disilicide was produced by two-step pack cementation technique. The inner SiC layer with a thickness up to 25 μm was obtained without promoted reaction additives by varying the composition, and thermal treatment conditions. The SiC/SiC-MoSi2 coating was produced with a thickness up to 80 μm by two step pack cementation, considering the effect of the inner layer characteristic. The enhancement of the oxidation resistance, observed in SiC/SiC-MoSi2 coated Cf/Cs by means of thermal analysis in flowing air up to 1500 °C, was due to the formation of SiO2 promoted by the passive oxidation of silicon carbide and molybdenum disilicide. 相似文献
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采用化学气相沉积方法,在石墨基体上,在1623K,666Pa的条件下制备了SiC含量从0 ̄100wt%全范围变动的C-SiC复合涂层材料,X-射线衍射表明,当SiC含量代于34wt%时,SiC以(220)面择优取向,而当含量高于34wt%时,SiC以(111)面择优取向。本文还对复合涂层的密度及硬度等性能做了测试。 相似文献