S波段超宽带固态功率放大器的研制

本文结合一款新研制的S波段超宽带固态功率放大器,介绍了超宽带固态功率放大器的设计理论和方法,根据砷化镓场效应晶体管的小信号S参数和I-V曲线,用微波仿真软件对功率管的输入、输出阻抗匹配电路及其偏置电路进行优化仿真设计.通过制作并测试此放大器,验证了该设计方法的可行性.最后,给出了测试数据,它在2GHz～4GHz的频带范围内,输入功率为40mW时,输出功率大于20W,带内功率起伏小于1.5dB.     

InGaP/GaAs HBT X波段混合集成功率合成放大器的研制

研制了面向X波段应用的InGaP/GaAs HBT混合集成功率合成放大器模块. 电路采用一种新颖的具有片上RC稳定网络的InGaP/GaAs HBT功率管作为功率合成单元以提高电路的稳定性,并采用紧凑的微带线并联匹配网络进行功率分配和合成. 在8.1GHz,偏置为Vcc=7V, Ic=230mA的AB类工作条件下,连续波最大输出功率为28.9dBm,功率合成效率达到80%.     

高效率GaAs/InGaAsHFET功率放大器

研制成 Ga As/ In Ga As异质结功率 FET(HFET) ,该器件是在常规的高 -低 -高分布 Ga As MESFET的基础上 ,在有源层的尾部引入 i-In Ga As层。采用 HFET研制的两级 C波功率放大器 ,在 5 .0～ 5 .5 GHz带内 ,当Vds=5 .5 V时 ,输出功率大于 3 2 .3 1 d Bm(0 .1 77W/ mm ) ,功率增益大于 1 9.3 d B,功率附加效率 (PAE)大于3 8.7% ,PAE最大达到 49.4% ,该放大器在 Vds=9.0 V时 ,输出功率大于 3 6.65 d Bm(0 .48W/ mm) ,功率增益大于 2 1 .6d B,PAE典型值 3 5 %     

InGaP/GaAs HBT X波段混合集成功率合成放大器的研制

研制了面向X波段应用的InGaP/GaAs HBT混合集成功率合成放大器模块.电路采用一种新颖的具有片上RC稳定网络的InGaP/GaAs HBT功率管作为功率合成单元以提高电路的稳定性,并采用紧凑的微带线并联匹配网络进行功率分配和合成.在8.1GHz,偏置为Vcc=7V,Ic=230mA的AB类工作条件下,连续波最大输出功率为28.9dBm,功率合成效率达到80%.     

AlGaAs/GaAs Heterojunction bipolar power transistors

An AlGaAs/GaAs heterojunction bipolar transistor with a total emitter periphery of 320 ?m has been developed for power amplifier applications. For the base contact, Zn diffusion was used to convert the n-type emitter material into p-type with a doping of ?1.0 × 1020 cm?3. Because of the highly doped layer, contact resistivity was extremely low (5 × 10?7 ?cm2). At 3 GHz, a CW output power of 320 mW with 7 dB gain and 30% power-added efficiency was obtained. Under pulsed operation, the output power increased to 500 mW with 6 dB gain and 40% power-added efficiency. With further device structure optimisations, the power performance of heterojunction bipolar transistors is expected to rival, or even surpass, that of the GaAs MESFETs.     

High-efficiency Ku-band HBT MMIC power amplifier

A Ku-band monolithic HBT power amplifier was developed using a metal-organic chemical vapor deposition (MOCVD)-grown AlGaAs/GaAs heterojunction bipolar transistor (HBT) operating in common-emitter mode. At a 7.5 V collector bias, the amplifier produced 0.5 W CW output power with 5.0 dB gain and 42% power-added efficiency in the 15-16 GHz band. When operated at a single frequency (15 GHz), 0.66 W CW output power and 5.2 dB of gain were achieved with 43% PAE     

InGaP/GaAs HBT功率放大器的键合线匹配技术

射频集成电路的性能很大程度受到封装的影响,与集成电路设计和制造工艺相比,封装技术并没有受到相应的关注.用一种新的键合线匹配功率放大器(PAM)的方法,利用封装寄生参数进行电路匹配设计,消除了封装的负面影响,并进行了试制验证;电路芯片采用InGaWGaAs HBT工艺制作并使用了16引脚微小引线框架(MLP)封装.无需芯片外表面贴装电容和电感,实现了功率放大器的低损耗输出阻抗匹配,节省了宝贵的线路板空间.电路测试指标很好地达到了设计要求,证明了该技术的可行性,为高性能、低成本射频功率放大器的开发提供了新的思路.     

一种应用于InGaP/GaAs HBT射频功率放大器的在片温度补偿电路

A new on-chip temperature compensation circuit for a GaAs-based HBT RF amplifier applied to wireless communication is presented.The simple compensation circuit is composed of one GaAs HBT and five resistors with various values,which allow the power amplifier to achieve better thermal characteristics with a little degradation in performance.It effectively compensates for the temperature variation of the gain and the output power of the power amplifier by regulating the base quiescent bias current.The temp...     

低偏置电压工作的自对准InGaP/GaAs功率异质结双极晶体管

介绍L波段、低偏置电压下工作的自对准InGaP/GaAs功率异质结双极晶体管的研制.在晶体管制作过程中采用了发射极-基极金属自对准、空气桥以及减薄等工艺改善其功率特性.功率测试结果显示:当器件工作在AB类,工作频率为2GHz,集电极偏置电压仅为3V时,尺寸为2×(3μm×15μm)×12的功率管获得了最大输出功率为23dBm,最大功率附加效率为45%,线性增益为10dB的良好性能.     

ESD protection design considerations for InGaP/GaAs HBT RF power amplifiers

In order to design a robust electrostatic discharge (ESD) protected RF amplifier in InGaP/GaAs HBTs, a comprehensive assessment of device vulnerability to ESD events in both active transistors and passive components of the HBT technology is presented in this paper. The results include not only the intrinsic HBT's ESD robustness performance, but also its dependence on device layout, ballast resistor, and process. Acknowledging the ESD constraints imposed on InGaP/GaAs HBT technology, a 5.4-6.0-GHz power amplifier (PA) with a compact 2000 V/sub ESD/ (human body model) on-chip ESD protection circuit that has a low loading capacitance of less than 0.1 pF and that does not degrade RF and output power performance is developed for wireless local area network application. A diode triggered Darlington pair is implemented as the ESD protection circuit instead of the traditional diode string. Its operation principle, ESD protection performance, and PA performance are also illustrated in this paper.     

The Matched Feedback Amplifier: Ultrawide-Band Microwave Amplification with GaAs MESFET's

An ultrawide-band amplifier module has been developed that covers the frequency range from 350 MHz to 14 GHz. A minimum gain of 4 dB was obtained across this 40:1 bandwidth at an output power of 13 dBm. The amplifier makes use of negative and positive feedback and incorporates a GaAs MESFET that was developed with special emphasis on low parasitics. The transistor has the gate dimensions 800 by 1 mu m. The technology and RF performance of the GaAs MESFET are discussed, as are the design considerations and performance of the single-ended feed-back amplifier module.     

A 25-W 5-GHz GaAs FET Amplifier for a Microwave Landing System

A 25-W 29-dB gain 5-GHz GaAs FET amplifier has been developed which can be used for a transmitter in the Microwave Landing System. By using 10-W class practical internally matched GaAs FET's hermetically sealed in ceramic packages, the four-stage amplifier has been constructed simply. The amplifier provides 30-W power output with 18.5 percent power efficiency at 17-dBm power input level. It also exhibited an exceffent AM/PM conversion of approximately 1°/dB, compared to 6°/dB for TWT amplifiers.     

A Low Distortion and Low Dissipation Power Amplifier with Gate Bias Control Circuit for Digital/Analog Dual-Mode Cellular Phones

A power amplifier operating at 3.3 V. has been developed for CDMA/AMPS dual-mode cellular phones. It consists of linear GaAs power MESFET's, a new gate bias control circuit, and an output matching circuit which prevents the drain terminal of the second MESFET from generating the harmonics. The relationship between the intermodulation distortion and the spectral regrowth of the power amplifier has been investigated with gate bias by using the two-tone test method and the adjacent channel leakage power ratio (ACPR) method of CDMA signals. The dissipation power of the power amplifier with a gate bias control circuit is minimized to below 1000 mW in the range of the low power levels while satisfying the ACPR of less than ?26 dBc for CDMA mode. The ACPR of the power amplifier is measured to be ?33 dBc at a high output power of 26 dBm.     

A 77-100 GHz power amplifier using 0.1-μm GaAs PHEMT technology

A wideband MMIC power amplifier at W-band is reported in this letter. The four-stage MMIC, developed using 0.1 μm GaAs pseudomorphic HEMT (PHEMT) technology, demonstrated a flat small signal gain of 12.4±2 dB with a minimum saturated output power (Psat) of 14.2 dBm from 77 to 100 GHz. The typical Psat is better by 16.3 dBm with a flatness of 0.4 dB and the maximum power added efficiency is 6% between 77 and 92 GHz. This result shows that the amplifier delivers output power density of about 470 mW/mm with a total gate output periphery of 100 μm. As far as we know, it is nearly the best power density performance ever published from a single ended GaAs-based PHEMT MMIC at this frequency band.     

Power-amplifier modules covering 70-113 GHz using MMICs

A set of W-band power amplifier (PA) modules using monolithic microwave integrated circuits (MMICs) have been developed for the local oscillators of the far-infrared and sub-millimeter telescope (FIRST). The MMIC PA chips include three driver and three PAs, designed using microstrip lines, and another two smaller driver amplifiers using coplanar waveguides, covering the entire W-band. The highest frequency PA, which covers 100-113 GHz, has a peak power of greater than 250 mW (25 dBm) at 105 GHz, which is the best output power performance for a monolithic amplifier above 100 GHz to date. These monolithic PA chips are fabricated using 0.1-μm AlGaAs/InGaAs/GaAs pseudomorphic T-gate power high electron-mobility transistors on a 2-mil GaAs substrate. The module assembly and testing, together with the system applications, is also addressed in this paper     

Optimization of Third-Order Intermodulation Product and Output Power from an X-Band MESFET Amplifier Using Volterra Series Analysis

A third-order analysis for accurately predicting large-signal power and intermodulation distortion performance for GaAs MESFET amplifiers is presented. The analysis is carried out for both single- and two-tone input signals using the Volterra series representation and is based only on small-signal measurements. Simple expressions for the nonlinear power gain frequency response, the output power, the gain compression factor, and the third-order intermodulation (IM/sub 3/) power are presented. The major sources of gain compression and intermodulation distortion are identified. Based on the developed nonlinear analysis in conjunction with the device nonlinear model, a systematic procedure for designing a MESFET amplifier under large-signal conditions for optimum output power and IM/sub 3/ performance is proposed. The method utilizes out of band computed matching compensation through a nonlinear model of the amplifier. The accuracy of the device large-signal and IM/sub 3/ distortion characterization and the practicability of the proposed method are illustrated through comparison between measured and predicted results.     

级联型单级分布式宽带单片功率放大器

报道了一个采用级联型单级分布式结构的宽带单片功率放大器的设计方法和研制结果。文中通过拓扑比较和人工传输线理论研究,分析出该功放设计的难点,并基于仿真实验,给出解决方案。最终研制的两级单片功放在6～18GHz频率范围内线性增益13.5dB,平坦度±1dB,输入输出驻波比均小于2。全频带上,饱和输出功率为300～450mW,功率附加效率大于15%。该宽带单片功率放大器在100mm GaAs MMIC工艺线上采用0.25μm功率pHEMT标准工艺制作,芯片尺寸为2.7mm×1.25mm×0.08mm。     

X-band MIC GaAs IMPATT amplifier module

A compact (2.0 by 1.6 in), light weight (2.1 oz), microwave integrated circuit (MIC) GaAs IMPATT amplifier module having 3.6-W pulsed output power with a gain of 22.5 dB over the 9.2-9.8 GHz band has been developed for phased array radar applications. The design goal for the module was 4-W pulsed output power with 23-dB gain over this frequency band. The module has been operated over a wide range of pulse lengths (200 ns-50 /spl mu/s) and duty factors (0.5-40 percent) with outstanding pulse fidelity. The totally integrated module consists of three IMPATT reflection amplifier stages in cascade with input and output isolators and a transmit/receive switch. Each amplifier stage has an independent hybrid thin film constant current pulse modulator. The design considerations of the essential components for final module integration, and the microwave performance characteristics are presented.     

Application of the Two-Way Balanced Amplifier Concept to Wide-Band Power Amplification Using GaAs MESFET's

An X-band GaAs FET power amplifier has been developed, significantly extending the bandwidth capabilities of such amplifiers reported to date. An output power of 1 W with an associated gain of 7.7 dB was achieved from 7.25 to 12.0 GHz by means of combining the power of two amplifier modules. Each of these modules consist of two balanced submodules cascaded to a two-stage unit. The transistor used in the "two-way balanced amplifier" has gate dimensions of 1000x1 mu m. The technology, RF performance, and characterization of the transistor are discussed in detail, as are the design and performance of both the single-ended and two-way balanced amplifier modules.     

Dual-Gate E/E- and E/D-Mode AlGaAs/InGaAs pHEMTs for Microwave Circuit Applications

In this paper, we developed dual-gate enhancement/enhancement-mode (E/E-mode) and enhancement/depletion-mode (E/D-mode) AlGaAs/InGaAs pHEMTs for high-voltage and high-power device applications. These dual-gate devices had a higher breakdown voltage (V_br) and maximum oscillation frequency (f_max). This could be obtained because there were two depletion regions, and the total electrical field was shared between the two regions, leading to lower output conductance (g_o) and lower gate-to-drain capacitance (C_gd). The dual-gate device can be operated at a higher drain-to-source voltage (V_ds), resulting in better linear gain and output power performance, as compared to a conventional single-gate E-mode GaAs pHEMT device. The maximum oscillation frequency obtained using the dual-gate E/E-mode device increased from 78 to 123 GHz. When operated at 2.4 GHz, the maximum RF output power of the single-gate E-mode and dual-gate E/D-mode devices increased from 636 to 810 mW/mm, respectively. We also produced a 2.4-GHz high-gain and high-power density two-stage power amplifier using dual-gate E/E and E/D-mode transistors. A linear gain of 40 dB and a maximum output power of 24 dBm were obtained.