多孔阳极氧化铝模板合成纳米点阵列的研究进展

多孔阳极氧化铝具有耐高温、成本低、空洞分布均匀有序且大小可控等优点,是制备高度有序纳米材料的理想模板.介绍了多孔阳极氧化铝模板的制备和以多孔阳极氧化铝为模板采用常规方法制备高度有序纳米点阵列材料的最新研究进展,以及纳米点阵列的应用前景.     

仿壁虎微纳米粘附阵列的工艺制作

介绍了采用微纳米加工技术制作仿壁虎脚趾粘附阵列的工艺方法。用ICP设备制作具有微米孔阵列的硅模板,用聚合物浇注,脱模后得到直径分别为2μm和5μm的微米阵列;浇注具有纳米孔径的氧化铝模板,脱模后得到直径约100nm的柔性纳米阵列。     

TiO_2/Ag/PAA纳米复合结构的制备及其光吸收性能

采用循环阳极氧化-腐蚀法制备了V型多孔阳极氧化铝(PAA)模板,在PAA上热蒸发沉积Ag薄膜后,再原子层沉积TiO_2薄膜,制备了TiO_2/Ag/PAA三维纳米复合结构。紫外-可见吸收光谱的结果表明,TiO_2/Ag/PAA复合结构在可见光区域的吸收率显著提高。当Ag薄膜沉积厚度为30 nm,TiO_2的原子层沉积厚度为20 nm时,所得TiO_2/Ag/PAA复合结构的吸收率为94.5%~99.0%。     

直流电沉积制备一维ZnSe半导体纳米材料

用二次阳极氧化法制备了多孔阳极氧化铝(AAO)模板。以AAO为模板,在ZnSO4、Na2SO4和H2SeO3的混合水溶液中进行直流电沉积了ZnSe半导体纳米线。SPM、TEM测试表明,模板表面形成模孔大小一致、排列规则的阵列。ZnSe纳米线的直径约为60nm,长度约为0.5μm并与模板的孔径和深度一致。在制备过程中,无需去除AAO的基底,喷金或预镀金属等处理,直接在AAO纳米孔内电沉积,制备纳米线。该方法简单、有效并且容易获得有序的半导体纳米线阵列。     

多孔氧化铝模板的制备及性质研究

多孔氧化铝由于具有规则的纳米多孔结构,是制备各种纳米材料的良好模板,因此,研究多孔氧化铝的制备和物理性质具有重要的意义.采用阳极氧化方法制备了多孔氧化铝有序孔洞阵列,通过场发射扫描电镜(SEM)和X射线衍射(XRD)观测了样品的表面、截面的形貌和晶态结构,分析了样品的透射光谱性质.结果表明,制备的多孔氧化铝模板的孔洞分布有序,孔径大小均匀,严格垂直底面;模板具有非晶态结构,在可见光和红外波长范围内具有较高的透射性能.     

多孔阳极氧化铝模板的制备

以多孔阳极氧化铝膜为模板制备纳米结构材料具有独特的优越性,得到了广泛的关注。介绍了多孔阳极氧化铝膜的形成机理、结构类型和在草酸溶液中制备多孔氧化铝模板的工艺。在本实验中,使用高纯铝片(99.99%)和0.3 mol/L浓度的草酸,利用电化学二次阳极氧化法制备出多孔阳极氧化铝模板,用SEM对其形貌进行了观测,得到的模板孔径在50～70 nm,孔间距约为100 nm。     

基于阳极氧化铝模板的金属纳米孔阵列膜制备

以0.3 mol/L草酸为电解液,在40 V直流电压、0～5℃下采用二步阳极氧化法制备了纳米多孔阳极氧化铝模板。用射频磁控溅射法在阳极氧化铝模板表面制备了金属铝膜。SEM分析结果表明:金属膜复制了阳极氧化铝模板形貌,具有纳米孔有序阵列结构;金属膜的孔径受控于溅射功率和时间,功率30 W下沉积10 min约为68 nm,32 W下10 min约为58 nm,32 W下15 min约为25 nm。     

纳米阵列结构功能材料的制备、性质及应用

综述了用径迹蚀刻膜模板和多孔阳极氧化铝模板等制备纳米阵列结构功能材料的方法,介绍了金属、半导体纳米阵列结构功能材料、碳纳米管阵列结构功能材料及纳米阵列复合材料的性质和应用实例,并探讨了其应用前景。     

介孔氧化铝组装金纳米颗粒阵列及其光学性质

采用真空蒸镀的方法在多孔氧化铝模板表面得到薄金膜,随后在真空管式炉中进行热处理,热处理中发生的热去湿过程使得金膜在多孔氧化铝表面形成有序的金纳米颗粒阵列。同时还研究了多孔氧化铝模板制备过程中二次氧化的作用,发现一次氧化对二次氧化进行具有一定指导作用;另外,研究了扩孔时间对模板孔径的影响,一定条件下,扩孔时间与孔径成正比例关系;最后研究了镀膜厚度对金纳米颗粒的影响,结果中可以看到,金膜的厚度直接影响金纳米颗粒阵列的形成。最后在分光光度计上的光学测量吸收光谱的结果中,出现了表面等离子体作用引起的很强的吸收峰。     

硅油稀释PDMS法制备紫外纳米压印软模板

软模板的制作是紫外纳米压印中关键的技术,模版的分辨率直接决定了压印图形的最小分辨率。使用具有高度均匀、100nm级孔洞阵列结构的多孔氧化铝作为母版,使用基于液态浇铸的硅油稀释聚二甲基硅氧烷(硅油和聚二甲基硅氧烷的质量比为1:2)法制备出具有规则点阵结构的软模板。通过SEM和AFM表征发现,特征图形得到了有效转移,特征尺度保持在100nm左右。相对于传统的模板制备方法,此方法成本低、流程简单、适合大规模生产,是一种非常有前途的软模板制备方法。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks