云南省铟资源的合理开发

介绍了我国金属铟的资源、生产现状、应用及市场情况,论述了云南铟的资源及铟产业现状,对今后铟产业可持续发展提出建议。     

再生铟可预示未来铟的最高价

长期以来，再生铟产量的提高就像控制铟价的压力阀门，一些贸易商说，预计在今年稍后的几个月，市场将出现过剩。 日本大型电子制造公司夏普公司，同时也生产液晶显示屏，他们会在短时间内引进回收利用技术的专利，这样他们可以从液晶显示屏面板上的铟锡氧化物（ITO）中重新获得95％的铟。     

支持我国铟产业发展的对策研究

日本和韩国把全球稀缺矿产资源——铟，列为战略矿产资源储备。而我国作为世界铟生产和出口大国，却对铟产业的发展不够重视。我国铟产业结构不合理，铟生产集中度低，开采加工过程中资源浪费严重，加之铟企业竞相压低价格出口，致使出口定价权长期被日本等消费国家控制，我国铟产业发展陷入日本等国家设计的“低水平发展循环陷阱”。因此，很有必要通过采取加强对铟资源保护、加大对铟产业技术的研发投入、建立我国铟资源的战略储备和商业储备、国家出台一系列相互配套的鼓励政策等对策，来支持我国铟产业健康快速发展。     

三甲基铟的分离与纯化方法

本发明是三甲基铟分离与纯化的改进方法。三甲基铟在磷化铟及其固溶体的外延结构生长工艺中得到了应用,并用于硅外延层的合金配制。已知的三甲基铟分离方法是采用反应混合物的真空蒸馏法。此法的缺点是主产品的产率低,在65％以下,且杂质含量相当高,见表1。三甲基铟的分离与纯化方法在工艺实质和所得结果方面是最接近的,即三甲基铟的     

中国铟冶炼行业发展现状

铟是元素周期表的第三主族元素,因其资源稀少而分散,与镓、铊、锗、硒、碲和铼等6种金属一起通称为稀散金属。铟具有十分独特的物理和化学性能,如熔点低、沸点高及传导性好等,广泛应用于电子、能源、国防军事等高科技领域。一、铟的主要应用领域铟主要以铟锡氧化物(ITO)、纯铟锭、半导体化合物、焊料或合金等形式的产品供应于市场。ITO是一种具     

铟

日本2007年的供求环境 2007年日本消费铟905t，几乎没有增长。ITO（铟锡氧化膜）大致占全部消费的近8成，为790t，其它消费115t。     

钒酸铟半导体材料的研究进展

钒酸铟半导体材料具有理想的可见光催化性能,近年来已成为国内外研究的热点。着重介绍了钒酸铟半导体材料的制备方法和应用进展。     

Electrochemical synthesis of gold nanoparticles onto indium tin oxide glass and application in biosensors

A simple one-step method for the electrochemical deposition of gold nanoparticles (GNPs) onto bare indium tin oxide film coated glass substrate without any template or surfactant was investigated. The effect of electrolysis conditions such as potential range, temperature, concentration and deposition cycles were examined. The connectivity of GNPs was analyzed by UV-Vis absorption spectroscopy and scanning electron microscopy. The nanoparticles were found to connect in pairs or to coalesce in larger numbers. The twin GNPs display a transverse and a longitudinal localized surface plasmon resonance (LSPR) band, which is similar to that of gold nanorods. The presence of longitudinal LSPR band correlates with high refractive index sensitivity. Conjugation of the twin-linked GNPs with albumin bovine serum-biotin was employed for the detection of streptavidin as a model based on the specific binding affinity in biotin/streptavidin pairs. The spectrophotometric sensor showed concentration-dependent binding for streptavidin.     

Formation of embedded indium nitride and indium oxide nanoclusters in silica samples sequentially implanted with indium and nitrogen ions

This article discusses the formation of embedded indium nitride (InN) nanoclusters (NCs) in silica matrix through sequential implantation of 890?keV In²⁺ and 140?keV N⁺ ions. The implanted samples were subjected to post-implantation annealing at 500°C in nitrogen atmosphere. Investigations carried out on the implanted samples using glancing incidence X-ray diffraction, high-resolution transmission electron microscopy and Raman spectroscopy gave clear evidence for the formation of InN nanoclusters. Alongside with InN NCs, we also notice the presence of indium oxide nanoclusters in the sample.     

聚苯并咪唑的合成及应用研究进展

介绍了国内外有关聚苯并咪唑高分子材料的研究状况.论述了聚苯并咪唑的发展,二元酸和四胺单体的合成方法、聚合工艺、种类及国内外应用状况,并对聚苯并咪唑的发展方向和研究热点进行了分析.     

Z型铁氧体的制备与应用进展

综述了Z型铁氧体的研究现状、晶型结构及吸波机理,指出目前Z型铁氧体存在的制备温度高、纯相制备困难及其磁性能需进一步调整等问题;总结了研究者在Z型铁氧体关于降低烧结温度以及提高磁性能等方面的工作,指明采用单一方法提升Z型铁氧体磁性能效果有限,应尝试将多种方式相结合;同时微观形貌对于Z型铁氧体的磁性能影响很大,提出径厚比与异形结构在提升Z型铁氧体磁性能方面的是进一步研究重点。     

纤维素及其在聚合物中的应用研究进展

综述了近几年来国内外在微晶纤维素和纳米纤维素的制备方法、预处理方法及其在高分子材料中的应用研究进展;讨论了影响微晶纤维素和纳米纤维素结构的工艺因素以及聚合物基纤维素材料的结构与性能的关系。     

纳米CdS材料的研究与应用进展

综述了近年来纳米CdS的制备技术及其材料的研究与应用进展,认为纳米CdS高分子材料具有含量可控、稳定性好、表面可修饰、光学性能好等优点,在光、电、传感、催化等领域有良好的发展前景,有待于深入研究.     

Fabrication and characterization of nanostructured indium tin oxide film and its application as humidity and gas sensors

This paper reports the synthesis and characterization of nanocrystalline indium tin oxide (ITO) and its application as humidity and gas sensors. The structure and crystallite size of the synthesized powder were determined by X-ray diffraction. The minimum crystallite size was found 5 nm by Debye–Scherrer equation and confirmed by transmission electron microscopy image. Optical characterizations of ITO were studied using UV–visible absorption spectroscopy and Fourier transforms infrared spectroscopy. Thermal analysis was carried out by differential scanning calorimetry. Further, the ITO thin film was fabricated using sol–gel spin coating method. The surface morphology of the fabricated film was investigated using scanning electron microscopy images. For the study of humidity sensing, the thin film of ITO was exposed with humidity in a controlled humidity chamber. The variations in resistance of the film with relative humidity were observed. The average sensitivity of the humidity sensor was found 0.70 MΩ/%RH. In addition, we have also investigated the carbon dioxide (CO₂) and liquefied petroleum gas sensing behaviour of the fabricated film. Maximum sensitivity of the film was ~17 towards CO₂. Its response and recovery times were ~5 and 7 min respectively. Sensor based on CO₂ is 97 % reproducible after 3 months of its fabrication. Better sensitivity, small response time and good reproducibility recognized that the fabricated sensor is challenging for the detection of carbon dioxide.     

A solid phase extraction procedure for indium prior to its graphite furnace atomic absorption spectrometric determination

A procedure based on solid phase extraction of indium ions at trace level on Chromosorb 108 resin as bathocuproinedisulfonic acid chelate is presented for its preconcentration. The optimum pH value for quantitative sorption is 8.0-9.0, and desorption can be achieved by using 10.0 ml of 2 M HNO3. The effects of diverse ions on the sorption and recovery of indium have been studied. The capacity of sorbent was 3.78 mg In/g resin. Recoveries for indium from water samples were in the range 95-105%. The accuracy of procedure was confirmed by indium determination in certified reference materials. The method developed was applied with varying results to the analysis of real samples including metallic zinc with satisfactory results.     

Structural properties of indium tin oxide thin films prepared for application in solar cells

Indium tin oxide (ITO) thin films prepared by rf sputtering were annealed in several temperatures. The electrical, optical and structural properties of these films are systematically investigated. The post annealing of the samples lead to considerably higher electrical conductivity, better optical transparency and larger grain size for the films. In an optimum annealing temperature of 400 °C, we have found that a maximized conductivity of films is achieved without a remarkable loss in their transparency. The sheet resistance of 2.3 Ω/□ and average grain size of 30 nm, are the results of the optimized post processing of films. The investigation for microstructure of films investigated by X-ray diffraction measurement (XRD) shows that a preferential crystal growth toward the (2 2 2) orientation takes place when the annealing temperature increases to 400 °C.