Structural,optical and electrical properties of Li-doped ZnO thin films influenced by annealing temperature

Li-doped Zn O thin films had been grown by radio frequency magnetron sputtering and then annealed under various annealing temperatures. The characteristics of Zn O films were examined by XRD, FESEM, Hall measurement and optical transmission spectra. Results showed that p type conduction was observed in Lidoped Zn O films annealed at 500-600 ℃ and the p type Zn O films possessed a good crystalline with c-axis orientation, dense surface, and average transmission of about 85% in visible spectral region.     

Low temperature properties of organic-inorganic Ag/ p -CuPc/ n -GaAs/Ag photoelectric sensor

A thin organic film of p-type semiconducting copper phthalocynanine (CuPc) was deposited by vacuum evaporation on an n-type GaAs single-crystal semiconductor substrate. The fabricated Ag/p-CuPc/n-GaAs/Ag sensor was carried through an ageing process to stabilize the parameters. Voltage-current characteristics and photoelectrical response of the sensor were investigated at a wide temperature range of 82 to 350 K. Photoelectric characteristics were measured under nonmodulated filament-lamp illumination. It was observed that such sensor parameters as rectification ratio, threshold voltage, junction, shunt and series resistances, open-circuit voltage and short circuit current are temperature-dependent. It was found that wide-range voltage-current characteristics of the sensor may be described similarly to that of a Schottky barrier diode. Using the experimental data on voltage-current characteristics and absorbance of the CuPc films, the energy-band diagram of the p-CuPc/n-GaAs heterojunction was developed. It was shown that data obtained from simulation of an equivalent circuit of photoelectric sensor agreed with experimental results. Supported by the National Engineering and Scientific Commission of Pakistan     

Formation of Epitaxial Heavy-doped Silicon Films by PECVD Method

Plasma-enhanced CVD(PECVD) epitaxy at 200℃ was used to deposit heavy doped n-type silicon films. Post-annealing by rapid thermal processing was applied to improve the properties of the epitaxial layer. By analyzing the Raman spectra and the imaginary part of the dielectric constant spectra of the samples, it was found that high-quality heavy-doped epitaxial n-type silicon layer can be obtained by optimizing the parameters of the PECVD depositing process. Reducing the electrodes distance of the PECVD had a great effect on the crystallzation of the epitaxialed n-type silicon films. Sillicon films with high-crystallization were obtained with the electrodes distance of 18 mm. Post-annealing process can improve the crystallization and reduce the resistance of the epitaxial films. In our research, it was found that the sheet resistance(R_□) of the post-annealed films with thickness of about 50 nm has a simple relationship with RPH3/SiH_4(ratio of the flow rate of PH_3 and SiH_4) of the PECVD processing: R_□=-184-125 lg(R_(PH3/SiH4)). In the end, high-quality epitaxial n-type silicon film was obtained with R_□ of 15 Ω/□ and thickness of ~50 nm.     

Controlled growth of ZnO nanorods by polymer template and their photoluminescence properties

A large amount of one-dimensional ZnO nanorods with diameters in 15―50 nm aligned in radial cluster were successfully synthesized by polar polymer polyvinyl alcohol (PVA) as soft-template. The growth of ZnO nanorods was controlled by changing annealing temperature. The evolution of the morphology and microstructure was investigated by scanning electron microscope, transmission electron micro- scope and X-ray diffraction. It is shown that ZnO nanorods tend to be uniform and the crystallization is gradually i...     

高压高温制备Sb掺杂的P型ZnO及电致发光

以ZnO和Sb_2O_3为前驱物,在5GPa、1100~1450℃条件下,制备出电学性能稳定的掺Sb的p型ZnO(记作ZnO:Sb)。其中1450℃掺杂4.6%Sb时合成了性能最好的P型ZnO:Sb,电阻率为1.6×10~(-2)Ωcm,载流子浓度为3.3×10~(20)cm~(-3),迁移率为12.1cm/V s。p型导电是由位于Zn位的Sb和两个Zn空位组成的复合受主引起的。测定了受主能级为113meV,讨论了压力对p型ZnO的形成和电性能的影响。此外,以高质量ZnO纳米线作为LED的发射层,通过将p型ZnO:Sb中的空穴注入ZnO纳米线中实现了激光发射。当注入电流达到20mA时,电致发光(EL)的功率可达到10mW。     

Controlled growth and photoluminescence of highly oriented arrays of ZnO nanocones with different diameters

Large-scale oriented ZnO nanocone arrays were directly grown on zinc substrate through a hydro-thermal reaction of Zn foil with aqueous butylamine solution(3 mol/L) at 100—180 ℃ for 12 h.The syn-thesized products were characterized with X-ray diffraction,Raman spectrum,scanning electron mi-croscopy and transmission electron microscopy.The results showed that the ZnO nanocones were single crystalline with the wurtzite structure and grown along the [0001] direction.The diameter of nanocones is decreased with ...     

Zinc Oxide Nanorods and Their Photoluminescence Property

1　IntroductionOne dimensional(1D)nanostructures,suchasnano tubes,nanowires,nanorodsandnanoribbons,haveattractedextraordinaryattentionfortheirpotentialapplicationsindeviceandinterconnectintegrationinnanoelectronicsandmolecularelectronics[1- 4].Thesemiconductingmetalox ideZnOisawideband gap (3.37eV)compoundsemi conductorthatissuitableforblueoptoelectronicapplica tions ,withultravioletlasingactionbeingreportedindisor deredparticlesandthinfilms[5 ].One dimensionalZnOnanostructureshavebeensynthe…     

Proposal and achievement of a relatively Al-rich interlayer for In-rich Al x In1−x N films deposition

Ternary In-rich Al _x In_1?x N films were successfully grown on Si (111) and (0001) sapphire substrates by radio-frequency magnetron sputtering on a relatively Al-rich Al _x In_1?x N layer after AlN buffer. X-ray diffraction (XRD) patterns of the films indicate highly c axis-oriented wurtzite structure and the indium content of about 0.76 has been evaluated according to the Vegard’s law. An Al-rich Al _x In_1?x N transition layer was formed between the ultimate In-rich Al _x In_1?x N film and the AlN buffer, which served as a further buffer to alleviate mismatch. X-ray photoelectron spectroscopy (XPS) depth profiling analyses confirm the alternative of indium and aluminum composition and the unavoidable oxygen impurities from surface to bulk. Owing to high indium content, obvious E ₂ ^H and InN-like A ₁ (LO) phonon model accompanying with slight AlN-like A ₁ (LO) phonon model are observed. Hall effect measurements demonstrate n-type electrical conductivity in these alloys with carrier concentrations n=10¹⁹ cm^?3. The strain in In-rich Al _x In_1?x N films can be significantly reduced by introducing an Al-rich interlayer, facilitating the improvement of film quality for diverse device applications.     

Highly oriented ZnO rod arrays on Si substrates from aqueous solution

Ordered zinc oxide （ZnO） rod arrays with very high orientation were fabricated on Si substrates by using a solution method. The substrate surfaces were functionalized by Self-Assembly Monolayers （SAMs）. In the very early growth stage, the oriented ZnO crystals had already grown, which appeared to be the main reason why ZnO nanorods showed very high orientation. The un-dense and un-uniform SAMs provided a surface that was heterogeneous to ZnO nucleation. Consequently, highly oriented ZnO rods were selectively grown on the ＂coin-like＂ SAM-uncovered regions. The route developed here can provide some helpful information to control the nucleation and orientation of ZnO in aqueous solution. Also, the site-selective growth mechanisms can indicate a clue to grow patterned highly oriented ZnO nanorod arrays by the organic template.     

生长温度和源氛浓度对ZnO晶体生长影响的机理分析

利用原子层沉积（ALD）方法在Si（100）片上沉积200nm的ZnO薄层作为籽晶层,通过化学气相沉积（CVD）法常压下在籽晶层上生长ZnO晶体结构。通过X射线衍射（XRD）、场发射电子扫描显微镜（FESEM）和光致发光光谱（PL）手段对其结构形貌及光学性质进行表征,结合晶体生长机理讨论和分析影响ZnO微纳结构生长的因素。结果表明,反应源气氛浓度是影响ZnO形貌的重要因素。     

ZnO纳米棒阵列的可控生长与表征

采用化学溶液法在沉积了ZnO种子层的SnO2:F导电玻璃衬底上,生长了ZnO纳米棒阵列。研究了1,3-丙二胺浓度对纳米棒阵列的形貌结构的影响规律。采用扫描电镜(SEM),X射线衍射(XRD)对ZnO纳米棒的表面形貌和晶格结构进行了表征。SEM结果表明纳米棒阵列垂直衬底表面生长,XRD结果表明纳米棒生长方向沿着[002]晶向,具有单晶结构。1,3-丙二胺浓度对制备得到的纳米棒形貌、长度等有明显调控作用。在优化条件下生长的ZnO纳米棒的长度大约7m,根部直径150nm,尖端直径大约10nm。研究了ZnO纳米棒阵列的光致发光(PL)特性。     

氨气退火对ZnO纳米线阵列光致发光性质的影响

采用水热方法在Si（100）衬底上制备ZnO纳米线．利用提拉法在Si衬底上首先制备ZnO晶种层,然后利用水热法在晶种层上生长ZnO纳米线．在不同温度下的NH。气氛中,对zn0纳米线进行退火处理．系统地研究了NHs退火对ZnO纳米线光学性质的影响,在低温光致发光光谱中观察到了-9氮受主相关的光发射,并通过自由电子一受主辐射复合光发射确定受主离化能为129meV．实验结果还表明,随着退火温度的升高,施主一受主对辐射复合发光呈现了微弱红移现象．在700℃退火的条件下制备的ZnO纳米线的低温PL谱中,观察到较为明显的自由激子光发射,并采用理论拟合进行证明．     

Electronic structure and transport coefficients of the thermoelectric materials Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> from first-principles calculations

The electronic structures of bulk Bi₂Te₃ crystals were investigated by the first-principles calculations. The transport coefficients including Seeback coefficient and power factor were then calculated by the Boltzmann theory, and further evaluated as a function of chemical potential assuming a rigid band picture. The results suggest that p-type doping in the Bi₂Te₃ compound may be more favorable than n-type doping. From this analysis results, doping effects on a material will exhibit high ZT. Furthermore, we can also find the right doping concentration to produce more efficient materials, and present the “advantage filling element map” in detail.     

Organic light emitting diodes with p-Si anodes and semitransparent Ce/Au cathodes

The Ce (x nm)/Au (15 nm) stacked layers were used as semitransparent cathodes in the top-emission organic light emitting devices (TOLEDs) fabricated on a p-type silicon anodes and substrate, where x varies from 4 to 16. The consequence of the Ce layer thickness on transmittance and the device performance were studied when the organic layers NPB (60 nm)/ALQ (60 nm) were kept unchanged, where NPB was N, N′-bis-(1-naphthl)-diphenyl-1, 1′-biphenyl-4, 4′-diamine, and AlQ is tris-(8-hydroxyquinoline) aluminum. The cathode of Ce (11 nm)/Au (15 nm) has a transparency of 46%, and the TOLED with it achieves the highest luminescence efficiencies: a current efficiency of 0.91 cd/A at 13.7 V and a peak power efficiency of 0.28 lm/W at 9 V. The turn-on voltage is 3.0 V. The Ce/Au cathode is both chemically and electrically stable.     

A compact plasma focus device and its neutron emission

A 2.2-kJ compact plasma focus device was developed and its characteristics of neutron emission were investigated. A maximum neutron yield of (3.1 ± 1.5) × 10~7 was obtained at 15 hPa deuterium filling pressure. It was found that the neutron yield Y_n is strongly correlated with the amplitude of the pinch dip in di/dt waveform. The time resolved measurement of the neutron pulse indicated that both the hard X-rays and the neutrons are emitted from plasma focus at the same instant and the width of neutron pulse (FWHM) changes slightly from 50 to 53 ns. The pinch time t_p varies from 1.5 to 16.5 ns and it is usually the case that the shorter t_p, the higher the neutron yield. It was also found that the squirrel cage cathode is better than the tubular cathode.     

FDTD analysis of the optical properties of vertical ZnO nanorod array

Based on the structure and dimensions of a vertical ZnO nanorod array(V-ZNA)sample,an ideal 2-D photonic crystal model was established.The optical properties of the V-ZNAs were analyzed with finite-difference time-domain(FDTD)method,and the influences of the geometry parameters,including the circumcircle diameters of the top and bottom surfaces(Dt and Db)and the height(H)of the nanorods,and the pitch between each column(L),were discussed.High transmittance and low reflectance in the waveband of 400–800 nm were proved,and the highest transmittance can be obtained with Dt50 nm,H=200 nm,and Db/L=0.85,which was verified by Effective Index Method(EIM).The result indicates that V-ZNAs can be used as excellent light coupling element and antireflection material for solar energy applications.     

Hybrid UV photodetector with high photo-to-dark current ratio based on ordered TiO2 nanorod arrays and polystyrene sulfate

Vertically aligned TiO₂ nanorods arrays were successfully synthesized on FTO glass by wet-chemical method. Based on polystyrene sulfate (PSS) functionalized TiO₂ nanorods arrays, a sandwich-structured hybrid UV photodetector was fabricated. The photo-to-dark current ratio of the device increases by more than 3 orders of magnitude with typical case, while the dark current is about 10 nA at 1 V bias. The high photoresponse together with the low dark current could probably contribute a large photocurrent and low-power application. The high performance of the hybrid material and facile low-cost fabrication of the UV detector make the devices promising for large-area UV photodetection applications.     

Effect of oxygen partial pressure on epitaxial growth and properties of laser-ablated AZO thin films

Al-doped ZnO (AZO) thin films were grown on c-sapphire substrates by laser ablation under different oxygen partial pressures (P _O2). The effect of PO2 on the crystal structure, preferred orientation as well as the electrical and optical properties of the films was investigated. The structure characterizations indicated that the as-grown films were single-phased with a wurtzite ZnO structure, showing a significant c-axis orientation. The films were well crystallized and exhibited better crystallinity and denser texture when deposited at higher P _O2. At the optimum oxygen partial pressures of 10 - 15 Pa, the AZO thin films were epitaxially grown on c-sapphire substrates with the (0001) plane parallel to the substrate surface, i e, the epitaxial relationship was AZO (000 1) // Al₂O₃ (000 1). With increasing P _O2, the value of Hall carrier mobility was increased remarkably while that of carrier concentration was decreased slightly, which led to an enhancement in electrical conductivity of the AZO thin films. All the films were highly transparent with an optical transmittance higher than 85 %.     

Fabrication of GaN films through reactive reconstruction of magnetron sputtered ZnO／Ga2O3

A simple and easily operated technique was developed to fabricate GaN films. GaN films possessing hexagonal wurtzite structure were fabricated on Si(111) substrates with ZnO buffer layers through nitriding Ga2O3 films in the tube quartz furnace. ZnO buffer layers and Ga3O3 films were deposited on Si substrates in turn by using radio frequncy magnetron sputtering system before the nitriding process. The structure and composition of GaN films were studied by X-ray diffraction, selected area electron diffraction and Fourier transform infrared spectrophotometer. The morphologies of GaN films were studied by scanning electron microscopy. The results show that ZnO buffer layer improves the crystalline quality and the surface morphology of the films relative to the films grown directly on silicon substrates. The measurement result of room-temperature photoluminescence spectrum indicates that the photoluminescence peaks locate at 365 nm and 422 nm.     

In-situ composition and luminescence of europium and terbium coordination polymers/PEMA hybrid thick films

Europium and terbium coordination polymers of pyridine-3-carboxylic acid were in-situ composed with ethyl methacrylate (EMA). With the polymerization of EMA monomer and the formation of europium and terbium coordination polymers of pyridine-3-carboxylic acid, the transparent hybrid thick films composed of [Eu(NIC)₃]_n ([Tb(NIC)₃]_n) and poly ethyl methacrylate (PEMA) have been prepared. The luminescence properties and energy transfer of these polymeric composites were studied with absorption spectra, fluorescent excitation and emission spectra in detail. All the hybrid thick films composed of terbium coordination polymer show the characteristic strong green emission of terbium ions, which implies the same energy transfer mechanism as the pure complex and the hybrid composite film is a suitable substrate for the luminescence of terbium ions. In the range of composing concentration of luminescent species (0.01, 0.025, 0.05, 0.1 mmol/15 mL EMA), emission intensities increase with the increasing of corresponding composing concentration and the concentration quenching effect does not take place. Founded by the National Natural Science Foundation of China (Grant No. 20301013) and Start Science Fund of Tongji University for Talented Researchers (138104001)