Extension of bandgap and switching effect of hetero-structure consisting of one-dimensional anisotropic photonic crystal

This paper presents an approach to control overlapping of band structure using a hetero-structure made of two one-dimensional photonic crystals (PCs) with anisotropic media. Some unique features, such as the extension of band structure and band edge resonance, have been discussed using a 4 × 4 transfix matrix method. The results show that by altering the relative orientation of the optical axes of the adjacent layers, it is possible to tailor the band structure of the PCs and control overlapping of the band structure of the hetero-structure. We also found that resonance modes operating near the band edge can be switched by altering the relative orientation of the optical axes of adjacent layers. These properties can be applied to tunable optical filters or optical switches.     

A型分子筛生长的理论模型

以XRD,TEM,电子衍射对A型分子筛水热晶化过程中晶体生长作了实时观察,分析了晶体生长过程中晶体的聚集行为与演化特征,提出了A型分子筛生长的叠合生长模型,认为,水热体系经过一个晶化诱导阶段后,大量的纳米晶形成,纳米晶作为生长基元,相互迅速了聚集直接叠合演化为微米多晶体,叠合过程不同于邻位面生长所描述的生长基元一个个按次序嵌入晶面,而是许多纳米晶同时相互按一定方向叠合而形成微晶。     

The atomic displacement static waves inside a zone of elastic to plastic transformation

The sequence of transformations of initially ideal solid argon crystal under uniform deformation was revealed. It was found that the formation of dislocations started from the modulational instability.     

Domain Wall Dynamics in Annealed GaMnAs Epilayers

We study magnetic field-driven domain wall motion in a GaMnAs thin film. The velocity is measured as function of the applied field. It varies over 6 orders of magnitude in a field range of 2.5 mT. Two regimes are identified. At low field, the domain wall motion follows a creep regime: it is controlled by defects and the domain wall velocity increases exponentially with the applied field. At higher fields, the domain wall motion follows a depinning regime: pinning defects are less efficient and the wall velocity increases linearly with the field. The highest measured domain wall velocity is 14 m s⁻¹.     

超细氢氧化铝晶核生长动力学数学模型的建立

为了有效控制、调节氢氧化铝制备的工艺参数,创造良好的晶体成核、生长条件,以粉煤灰为原料制备超细氢氧化铝,通过单因素实验分别构建铝酸钠溶液浓度、碳化温度、分散剂掺量、CO2气体浓度、pH值、A试剂加入量、碳化通气速度等影响因素对氢氧化铝粒径影响的回归方程,建立氢氧化铝晶核生长动力学数学模型,然后通过正交实验,确定各因子相关系数.模型检验结果表明,误差在5%以内,具有一定的可信度.采用动力学数学模型可以减少实验工作量,提高工程放大倍数,从而降低研发成本,提高产品产量与质量.     

Design of omnidirectional reflectors based on a cascaded one-dimensional photonic crystal structure

The omnidirectional transmission properties of photonic heterostructures composed of cascaded one-dimensional photonic crystals (1DPCs) with the same materials and different thickness ratios of the alternate high- and low-refractive index layers were studied theoretically. A criterion for designing omnidirectional reflectors with a maximum bandgap width is presented for heterostructures with an arbitrary number of cascaded 1DPCs. Omnidirectional reflectors based on two and three cascaded 1DPCs are designed according to the criterion.     

A mathematical model of a crystal oscillator and clock in the form of an augmented system of state equations

An analysis of a mathematical model of a crystal oscillator and clock and disturbances in the form of an augmented system of state equations is performed. By means of such a model, it is possible to synthesize an optimal frequency-time stabilization system for the GLONASS/GPS synchronizing reference receiver. __________ Translated from Izmeritel’naya Tekhnika, No. 4, pp. 35–38, April, 2007.     

Temperature control of the ultra-short laser pulse compression in a one-dimensional photonic band gap structure with nematic liquid crystal as a defect layer

We investigate numerically the controllable chirped pulse compression in a one-dimensional photonic structure containing a nematic liquid crystal defect layer using the temperature dependent refractive index of the liquid crystal. We consider the structure under irradiation by near-infrared ultra-short laser pulses polarized parallel to the liquid crystal director at a normal angle of incidence. It is found that the dispersion behaviour and consequently the compression ability of the system can be changed in a controlled manner due to the variation in the defect temperature. When the temperature increased from 290 to 305 K, the transmitted pulse duration decreased from 75 to 42 fs in the middle of the structure, correspondingly. As a result, a novel low-loss tunable pulse compressor with a really compact size and high compression factor is achieved. The so-called transfer matrix method is utilized for numerical simulations of the band structure and reflection/transmission spectra of the structure under investigation.     

Toughening due to domain switching in single crystal ferroelectric materials

In this paper Mode I steady state crack growth in single crystal ferroelectric materials is investigated. Specifically, the fracture toughness enhancement due to domain switching near a steadily growing crack tip is analyzed. For this purpose, an incremental phenomenological constitutive law for single crystal ferroelectric materials is implemented within a finite element model to calculate the stress and remanent strain fields around the crack tip. Also, the ratio of the far field applied energy release rate to the crack tip energy release rate, i.e. the toughening, is calculated. The numerical computations are carried out for single crystal ferroelectric materials of tetragonal or rhombohedral structure with different switching hardening and irreversible remanent strain levels. Toughening levels for crack growth along different crystallographic directions and planes are obtained and compared. Results from numerical computations for the toughening anisotropy for both tetragonal and rhombohedral crystals are presented and discussed.     

Domain switching in ferroelectric single crystal/ceramics under electromechanical loading

Domain switching in PMN-PT single crystal and PZT-5 ceramics under electromechanical loading were studied in two different ways. For the single crystal, domain switching was in situ investigated with polarized light microscopy. A 90° domain-switching zone was observed near the crack tip and the size of the switching zone changed with the acuity of the crack tip. For PZT-5 ceramics, domain switching under orthogonal electromechanical loading (E₃ and compressive stress σ₁₁) was studied by measuring the hysteresis loops, butterfly curves and reversed butterfly curves (₁₁ versus E₃). Experimental results show that 90° domain switching is suppressed in the planes parallel to the compression direction. A domain-switching model dividing each 180° switching to two successive 90° switching was proposed to explain the experimental results.     

Phase time delay and Hartman effect in a one-dimensional photonic crystal with four-level atomic defect layer

The Hartman effect is revisited using a Gaussian beam incident on a one-dimensional photonic crystal (1DPC) having a defect layer doped with four-level atoms. It is considered that each atom of the defect layer interacts with three driving fields, whereas a Gaussian beam of width w is used as a probe light to study Hartman effect. The atom–field interaction inside the defect layer exhibits electromagnetically induced transparency (EIT). The 1DPC acts as positive index material (PIM) and negative index material (NIM) corresponding to the normal and anomalous dispersion of the defect layer, respectively, via control of the phase associated with the driving fields and probe detuning. The positive and negative Hartman effects are noticed for PIM and NIM, respectively, via control of the relative phase corresponding to the driving fields and probe detuning. The advantage of using four-level EIT system is that a much smaller absorption of the transmitted beam occurs as compared to three-level EIT system corresponding to the anomalous dispersion, leading to negative Hartman effect.     

Study of band structure of one-dimensional photonic crystal composed of dispersive and nonlinear dielectric materials

The analysis of band structure of one-dimensional (1-D) photonic crystal containing dispersive and non-linear dispersive materials has been presented. The band spectra for the different combination of photonic crystals have been calculated by the well-known plane wave expansion method. The effect of the dispersive and non-linear materials on the band structures has been determined. The third-order nonlinearity has been considered in the non-linear material, and Lorentz–Drude model has been taken for dispersive material. The band gaps of considered photonic crystal are affected by the nonlinearity in the presence of dispersive material like gold. We have observed that the normalized frequency difference between photonic bands decreases on increasing intensity of input beam. This work may be useful in optical switching devices.     

Synthesis,crystal structure and thermal analysis of a new stilbazolium salt crystal

A new organic crystal of 4-N, N-dimethylamino-4′-N′-methyl-stilbazolium benzene sulfonate (DASBS) was synthesized and characterized for the first time. It is a derivative of 4-N, N-dimethylamino-4′-N′-methyl-stilbazolium tosylate (DAST) with the benzene sulfonate replacing p-toluenesulfonate. Single crystal XRD demonstrated that the crystal structure of DASBS·H₂O was triclinic. The thermal analysis of this new crystal was also conducted, and the melting point was obtained to be 232°C.     

晶体塑性模型描述多晶体循环加载中的Bauschinger效应

为了研究循环加载过程中织构对多晶材料Baushinger效应的影响,利用经典晶体塑性模型及含随动硬化的晶体塑性模型模拟AA6104铝合金循环加载力学行为.研究了多晶体中晶粒取向差异对材料宏观塑性行为的影响.详细分析了经典晶体塑性模型可描述多晶体循环加载Bauschinger效应机理,定量分析了多晶有限元模型中晶体取向差异对模拟结果的影响.结果表明多晶体中由于晶粒取向差异而造成的晶粒间相互作用力使得多晶体模型宏观卸载时晶粒内的残余应力是产生Bauschinger效应的主要原因,采用含随动硬化的晶体塑性模型能够较好地模拟具有织构的AA6014铝合金的循环加载过程.     

可见光区一维光子晶体纳米膜偏振带通滤波器的设计

应用一维时域有限差分方法研究各种条件下一维二元光子晶体的偏振带通滤波特性,具体数值分析了掺杂层位置、厚度、电磁参数、入射角度四种因素对偏振滤波特性的影响.数值结果表明传统意义上的光学多层膜是一维二元光子晶体在光学厚度满足四分之一波长时的特例;可见光区的偏振滤波器的窄带滤波特性与掺杂层的位置有关,掺杂层在整个膜中间位置时偏振分离效果好,掺杂层的厚度与周期层厚度相差越大则分离效果越好,两组元折射率相差越大越易形成禁带,入射角越大禁带越窄,偏振的分离度越好.特别是P偏振局域模更多;在线度参数相同的情况下介质电磁参数对禁带有较大影响,禁带只有在两组元折射率相差越大才能形成,介质损耗同样是不可忽略的因素;光源的入射角对禁带有重大影响.本文的研究对光子器件的设计有一定的指导作用.     

Si(111)衬底上生长GaN晶绳的研究

利用热壁化学气相沉积在Si(111)衬底上获得GaN品绳,采用傅里叶红外吸收谱(FTIR)、扫描电子显微镜(SEM)、选区电子衍射(SAED)、X射线衍射(XRD)和光致发光谱(PL)对晶绳进行组成、结构、形貌和光学特性分析。初步结果证明：在Si(111)衬底上获得择优生长的六方纤锌矿结构的GaN晶绳。SEM显示在均匀的薄膜上出现φ6μm的晶绳,FTIR显示GaN薄膜的主要成分为GaN同时含有少量的C污染,由XRD和SAED的综合分析得出晶绳呈六方纤锌矿单晶结构,PL测试表明晶绳呈现不同于GaN薄膜的发光特性。     

Development and validation of a two-dimensional population balance model for a supercritical CO2 antisolvent batch crystallization process

In this study, a two-dimensional population balance model with solvent removal kinetics has been developed to predict the dynamic behavior of carbamazepine form II crystals produced by a supercritical CO₂ antisolvent batch crystallization process. The model was simulated and validated using experimental crystal size distribution data (CSD). The model was able to accurately predict the behavior of CSD with a change in process operating conditions. The model was also applied to study the time evolution of aspect ratio, average crystal length, and solute concentration in the solution. Finally, solvent removal kinetics were modeled to evaluate the solvent content and drying temperature of the drying gas during the solvent removal process. The developed mathematical model and the presented results suggest the ability of the discussed approach to make suitable model predictions, which can significantly reduce the number of experimental trials required for process design, optimization, and control.     

用遗传算法搜索一维光子晶体带隙

利用遗传算法和传输矩阵法计算一维光子晶体能带结构,将一维光子晶体用像素填充法进行二进制编码模拟,结果找到全方位相对禁带宽度达42.54%的4层结构和43.75%的2层结构;给出了一维光子晶体4层最佳结构的能带图、20个原胞的反射率透射率频谱图.发现一维2层光子晶体的全方位禁带宽度对每层厚度的变化是不敏感的,但是随着两种介质折射率差的增大而增大.     

Synthesis and structural characterization of CsNiP crystal

CsNiP crystals were synthesized by hydrothermal technique and characterized by the X-ray diffraction method. This alkaline transition metal phosphide crystallizes in the hexagonal system with space groupP6 ₃/mmc and cell parameters,a = 7.173(2) Å,c = 5.944(9) Å,V = 264.87(7) ų andZ = 2. The final residual factor isR1 = 0.0362 for 206 reflections withI > 2σ(I).