再入式光纤陀螺信号检测方法

文章提出了一种针对再入式光纤陀螺(Re - FOG)的信号检测方法,采用正负交替变化的脉冲波调制,使不同循环圈数干涉信号得到不同的相位调制,从而分离出所需圈数的干涉信号并解算出转速。实验测试了陀螺样机,分离了第一圈和第二圈干涉信号并由此测量到转速。实验结果表明:所提出的信号检测方法能够有效地测出陀螺转速;所研制的光纤陀螺的零偏稳定性优于4°/h。     

干涉式光纤陀螺跨条纹工作误差研究

在干涉式光纤陀螺中,当调制信号超出限制并进行2π复位时,调制信号输入的调制量与输入角速度间出现了2π的相位差,这使实际的干涉相位出现左移或右移2π,即跨条纹工作。在光纤陀螺闭环系统中,跨条纹工作产生的误差体现在随机游走系数和非线性度上。该文通过优化调制方案建立跨条纹误差抵消机制,可使跨条纹产生的误差互相抵消,从而提高光纤陀螺的非线性度和随机游走系数。经过仿真和实验表明该方法有效。     

退偏光纤陀螺刻度因数研究

首次在理论与实验两方面研究了闭环退偏干涉型光纤陀螺刻度因数的非线性误差,闭环锯齿波相位调制器对两个偏振光分量的不同调制深度是其非线性误差的原因之一。提出了降低闭环退偏干涉型光纤陀螺刻度因数非线性误差的方法。     

进入实用期的光纤陀螺

综合介绍各种光纤陀螺的工作原理及其实用化概况,着重讨论干涉型光纤陀螺的各种信号检测方案及干涉型光纤陀螺实用化的最新进展.最后讨论光纤陀螺的发展方向.     

一种闭环干涉式光纤陀螺的研究与实现

介绍了一种采用DSP和相关检测技术实现的闭环干涉式光纤陀螺.该闭环光纤陀螺采用以多功能集成光学器件为核心的结构,以方波为偏置调制,数字阶梯波为反馈.在此基础上提出的相关检测方法较好地发挥了闭环干涉式光纤陀螺的优点,使系统具有检测精度高、动态范围大、低漂移等优点,是一种理想的检测技术.     

相位调制非线性对开环光纤陀螺工作点测量与信号解调的影响

在全光纤开环光纤陀螺中，利用压电陶瓷调制器可以为光纤陀螺提供互易性正弦相位偏置，但相位调制中的寄生非线性会对陀螺测量产生影响。从理论上给出了二倍频非线性相位调制情况下开环光纤陀螺输出信号的一、二、四次谐波表达式，分析了相位调制非线性对陀螺工作点测量与信号解调的影响，实验验证了相关结果。实验结果与理论分析表明在陀螺应用中必须采取措施抑制非线性相位调制的幅度。     

一种光纤陀螺干涉仪光纤长度误差量测量方法

为提高光纤陀螺干涉仪保偏光纤长度误差量的测量精度,提出了一种基于四态方波调制的新的解决方法,将对光纤陀螺Sagnac干涉仪光纤长度误差量的测量转化为对探测器响应信号中尖峰脉冲的测量,并利用调制频率倍频技术实现了对尖峰脉冲的精细化测量。依据该方法设计制作了一套可检测光纤长度误差量的系统,达到了0.2 m的测量精度(2 000 m光纤)。实验结果表明,与普通保偏光纤测量方法相比,该方法测量精度高、速度快,为光纤陀螺的工程化装配提供了保障。     

高精度光纤陀螺振动误差抑制技术

随着光纤陀螺的实用化,载体振动会使高精度光纤陀螺产生测量误差并使噪声增大,对光纤陀螺的性能指标造成不可忽视的影响.为了抑制光纤陀螺的振动误差,提高光纤陀螺的稳定性,对干涉式数字闭环光纤陀螺,从振动对光源和光纤环的影响机理出发,分析了振动影响下光纤陀螺干涉信号的表现形式,并针对此提出了抑制光纤陀螺输出信号噪声和消除陀螺漂...     

谐振式光纤陀螺调相检测分析

谐振式光纤陀螺（R—FOG）是新一代惯性旋转传感器的代表。在陀螺系统中，信号检测系统占有非常重要的地位，其检测精度的大小直接影响陀螺的分辨率，而解调曲线的优化能够进一步提高检测系统的灵敏度。利用贝塞尔函数展开和光波场叠加的方法分析了谐振式光纤陀螺调相检测系统解调输出信号与谐振频率偏差之间的关系，系统采用的是带有铌酸锂相位调制器的相位谱检测技术。根据解调输出信号的解析表达式，通过数值计算，分析了解调曲线的变化规律，得到了施加在铌酸锂相位调制器上调制波形的最佳调制系数和相应的最佳调制频率范围，并进一步用实验系统验证了上述分析结果。     

干涉式光纤陀螺电路串扰的智能辨识技术

电路串扰会影响干涉式光纤陀螺的精度,电路串扰辨识是干涉式光纤陀螺研究领域的重点方向,针对传统方法干涉式光纤陀螺电路串扰辨识误差大等难题,为了提高干涉式光纤陀螺电路串扰的辨识效果,提出了一种干涉式光纤陀螺电路串扰的智能辨识技术。从干涉式光纤陀螺电路串扰信号中提取特征,并采用数据挖掘技术根据特征拟合干涉式光纤陀螺电路串扰变化特点,从而建立了干涉式光纤陀螺电路串扰智能辨识模型,对干涉式光纤陀螺电路串扰辨识结果表明,所提技术的干涉式光纤陀螺电路串扰辨识精度超过92%,减少电路串扰智能辨识时间,电路串扰辨识精度和效率明显优于其它方法,具有更高的实际应用价值。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.