一种高精密CMOS带隙基准源

设计了一个与n阱工艺兼容的高精密CMOS带隙基准电压源电路。该电路实现了一阶PTAT温度补偿，并具有好的电源抑制比。SPICE模拟和测试结果表明，其电源抑制比可达到60dB，在20—70℃范围内精度可达到60ppm／℃。     

一种高精度带隙基准电压源设计

提出一种采用0．35umCMOS工艺制作的带隙基准电压源电路,该电路具有高电源抑制比和低的温度系数。整体电路使用TSMC0．35umCMOS工艺,采用HSpice进行仿真。仿真结果表明,在-25～＋125℃温度范围内温度系数为6．45ppm／C,电源抑制比达到-101dB,电源电压在2．5～4．5V之间,输出电压Vrel的摆动为0．1mV,功耗为0．815mW．是一种有效的基准电压实现方法。     

高电源抑制比的CMOS亚阈值多输出电压基准

基于工作在亚阈值区的MOS器件,运用CMOS电流模基准对CATA和PTAT电流求和的思想．提出一种具有低温漂系数、高电源抑制比（PSRR）的CMOS电压基准源,该电路可同时提供多个输出基准电压,且输出电压可调。该基准源基于CSMC0．5μm标准CMOS工艺,充分利用预调节电路并改进电流模基准核心电路。使整个电路的电源抑制比在低频时达到122dB,温度系数（TC）在0-100℃的温度范围内约7ppm／℃。     

可用于电视系统的带隙基准电压源设计

针对传统一阶温度补偿的CMOS带隙基准电压源的温度特性较差的问题,在此基础上采用高阶温度补偿以改善温度特性,并且在电路中增加了带有负反馈的前调整器,提高了基准电压的电源抑制比.对电路采用SMICO.18CMOS工艺进行仿真,输出电压在温度为-20℃～+58℃范围内有负的温度系数2.34×10-6/℃,在温度为58℃～120℃范围内有正的温度系数为2.21×10-6/℃,在低频时电源抑制比可达116 dB,在10 kHz时也可达到73 dB.     

一种带隙基准电压源的设计

经分析带隙基准电压源的温度补偿原理，进行一阶温度补偿，然后提出了新型的二阶温度补偿的方法，用Hspice仿真，得到温度系数为5ppm／℃，电源抑制比可达到60dB，取得了比较理想的效果。     

一种低温度系数带隙基准电压源

描述了一个具有高电源抑制比和低温度系数的带隙基准电压源电路。基于1阶零温度系数点可调节的结构,通过对不同零温度系数点带隙电压的转换实现低温度系数,并采用了电源波动抑制电路。采用SMIC 0.18μm CMOS工艺,经过Cadence Spectre仿真验证,在-20℃～100℃温度范围内,电压变化范围小于0.5mV,温度系数不超过7×10-6/℃。低频下的电源抑制比为-107dB,在10kHz下,电源抑制比可达到-90dB。整个电路在供电电压大于2.3V时可以实现正常启动,在3.3V电源供电下,电路的功耗约为1.05mW。     

一种高性能带隙基准源的设计与分析

提出了一种采用0.6ΜM 1P1M(单层POLY,单层METAL)CMOS工艺的高性能带隙基准电压源电路(BGR)设计。该电路能够在电压范围[4.0 V,6.0 V]内稳定工作,实现了一阶PTAT(与绝对温度成比例)温度补偿,并具有较好的电源抑制比和较低的温度系数,应用在热释电红外传感器专用控制芯片之中。HSPICE模拟和芯片测试结果表明,其电源抑制比可达到65 DB,在0℃~70℃范围内精度可达到23×10-6/℃,当VDD为5 V时功耗仅为158.694 5ΜW。     

一种体输入式1V低电源电压带隙基准电路

本文设计了一种电源电压低于1V的体输入式带隙基准电路。在电路的核心电路部分采用了体输入方式以使电路在低电源电压条件下仍能保持较大的共模输入范围。同时,在本设计中舍弃了传统的用镜像电路采集温度补偿电流的方式,而设计了一种新的采集电路结构以避免传统采集方式在低电源电压情况下出现的镜像误差问题。采用CSMC 0．6um工艺的仿真结果表明,在-40--80℃的温度范围内,输出基准电压的温度系数为20ppm／℃,电源电压抑制比（PSRR）在1KHz时可达到60dB。     

低温漂的基准电压源的研究

本文介绍了一种采用0．35微米CMOS工艺制作的一种低温漂的能隙基准电压源电路．电路的供电电源是5V．输出基准电压的典型值为2．5V．电路典型功耗为1．02mW，它具有低的温度漂移系数．在-45℃-＋90℃典型值优于4ppm/℃．高的交流电源抑制比．在较宽的频率范围内优于-51．4db．电源在4．75V-5．25V的范围内的直流电源抑制比为400ppm／V．版图面积典型值为0．786mm^2。     

一种高精度高电源抑制比的带隙基准电压源的设计

设计了一种具有良好稳定性和高精度的带隙基准电压源电路。通过启动电路和提高电源抑制比电路的加入,使得带隙基准电压具有较高的电源电压抑制比和较小的温度系数。HSPICE仿真结果表明,在电源电压V_(DD)=3．3V时,在-55℃～125℃的温度范围内,电路得到一个温度系数仅为17×10~(-6)/℃,电源抑制比(PSRR)为79dB的带隙基准电压输出。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks