共查询到20条相似文献,搜索用时 62 毫秒
1.
本文论述了下游式等离子体在多种Cu/低k材料上去胶及去残留物的工艺应用,主要有3类低k材料的实验数据——有机类、掺氮氧化物和多孔性低k材料,同时论述了在这些对应低k材料上新的等离子体气氛:(1)中性等离子体;(2)无氧和还原性等离子体;(3)无氧和无氮等离子体。 相似文献
2.
用一种顺流微波等离子干法除胶设备开发出了一种享有专利的等离子工艺,该工艺可满足后道工序中铜及低k材料应用中密集和渗透性低k介电材料的抗蚀剂除胶要求。最终结果显示等离子各向同性除胶工艺与其他等离子化学方法相比,在很大程度上可对介电材料的损伤率降到最小,且能实现除胶后的湿法清洗。首先介绍并讨论了在涂覆抗蚀剂片子上得到的综合工艺特征数据。这些数据包括抗蚀剂去胶速率、低k膜厚度损失及折射指数变化、除胶选择性、k值变化、FTIR光谱以及FDS和SIMS分析结果。在有图形的片子上得到的扫描电镜检查结果显示了在等离子去胶和随后的湿法清洗后的清洁度、良好的图形轮廓和图形结构的关键尺寸保持情况。并介绍了评价器件性能的电性能测试和可靠性数据。此外还讨论了等离子工艺在铜表面清洗的有效性。 相似文献
3.
4.
5.
6.
7.
8.
阐述了低k材料在IC电路中的作用及其性质,以SiO2、SiOF、SiOCSP、SiOCNSP、Si-OCSO五种材料为研究对象,分析了低k材料与Cu互连工艺的相互联系和作用。在Sikder和Kumar提供的声发射信号(AE)的在线监测图的基础上比较和分析了五种材料的硬度和模数值;根据Preston方程绘制九点测量数据图,发现前三种材料可满足抛光机理,而后两种的抛光行为更倾向于表面反应;根据五种材料抛光前后的实验数据表面形态图表,判断出抛光后材料粗糙度的走向。最后指出低k材料需要发展和完善的工艺及对抛光设备的进一步要求。 相似文献
9.
10.
以单片去胶设备为例,介绍了等离子去胶机的结构原理,对其维护标准和调试方法进行了详细阐述,对常见的故障和解决方法进行了总结,最后针对射频自动匹配模块分析了典型维修案例。 相似文献
11.
12.
离子注入技术在气敏材料上的应用 总被引:1,自引:1,他引:0
离子注入技术已被应用于气敏材料的开发研究,这是离子注入技术的一个较新的应用领域。本文介绍离子注入技术对气敏材料表面层组分、结构、电导率及气敏特性进行改性的研究进展。 相似文献
13.
氧化钒热敏薄膜的制备及其性质的研究 总被引:6,自引:0,他引:6
报道一种制备氧化钒热敏薄膜的新方法。采用离子束溅射V2O5粉末靶淀积和氮氢混合气体热处理相结合的薄膜技术,可制备热敏性能较好的低价氧化钒薄膜VOx(x<2.5)。对不同温度退火后氧化钒薄膜在10-100℃范围内测定了薄层电阻随温度的变化,得到的电阻温度系数(TCR)值为(-1~-4)%K^-1。研究结果表明通过这种方法可在较低温度下制备氧化钒薄膜,这种薄膜具有较低的电阻率和较高的TCR值,可作为非致冷红外微测辐射热计的热敏材料。 相似文献
14.
15.
提出了一种基于两步转换法(5 6)的高速高精度A/D转换器体系结构,其优点是可以大幅度降低芯片的功耗及面积。采用这种结构,设计了一个10位40 MHz的A/D转换器,并用0.6μm BiCMOS工艺实现。经过电路模拟仿真,在40 MHz转换速率,1 V输入信号(Vp-p),5 V电源电压时,信噪比(SNR)为63.3 dB,积分非线性(INL)和微分非线性(DNL)均小于10位转换器的±0.5 LSB,电源电流为85.4 mA。样品测试结果:SNR为55 dB,INL和DNL小于10位转换器的±1.75 LSB。 相似文献
16.
砷化镓材料中缺陷的不均匀分布严重地限制了集成电路生产的重复性。本文首次提出一种利用傅里叶变换频谱图象检测和分析沿110和010方向上位错缺陷的统计分布的方法,称为FTIT检验法。文中定义的相参系数和纹理复杂系数是定量地检验制造集成电路材料中缺陷的重要指标。 相似文献
17.
Novel polymer nanocomposites were prepared by solution processing with core/shell structured nanoparticles (carbonaceous shell coating on silver cores) as fillers. The organic carbonaceous shells act as interlayers between the Ag cores as well as with the polymer matrix. It is shown that the electrical properties of the interlayers play a dominative role in determining the dielectric behavior of the nanocomposites. Insulating interlayers reduce the tunnel current between neighboring Ag cores by causing potential barriers, endowing the nanocomposites with stable and high dielectric constants and low dielectric loss. Furthermore, the stable dielectric constants of the nanocomposites could be tuned by adjusting the thickness of the interlayers. Increasing the conductivity of the interlayers lowers the potential barriers, making the dielectric behavior of the nanocomposites more similar to that of conventional percolative composites. 相似文献
18.
19.
This paper presents the various Analog to Digital Converter (ADC) architectures within a structured frame in order to outline the basic design choices and to point out some additional degrees of freedom beyond the classic ADC circuits. The parameters for a detailed analysis of performance, speed, precision, costs are identified and discussed. Within this frame, the paper identifies variations to the classic ADC structures, which provide additional speed/cost tradeoffs. The aim is to provide students an understanding of various ADC techniques, allowing a motivated choice of the most suitable structure for each specific application at the systems design level. This approach has been used in teaching ADCs for several years, and the paper includes a discussion of results and student feedback. 相似文献
20.
B.D. Hatton K. Landskron W. Whitnall D.D. Perovic G.A. Ozin 《Advanced functional materials》2005,15(5):823-829
Periodic mesoporous organosilica (PMO) thin films have been produced using an evaporation‐induced self‐assembly (EISA) spin‐coating procedure and a cationic surfactant template. The precursors are silsesquioxanes of the type (C2H5O)3Si–R–Si(OC2H5)3 or R′–[Si(OC2H5)3]3 with R = methene (–CH2–), ethylene (–C2H2–), ethene (–C2H4–), 1,4‐phenylene (C6H4), and R′ = 1,3,5‐phenylene (C6H3). The surfactant is successfully removed by solvent extraction or calcination without any significant Si–C bond cleavage of the organic bridging groups R and R′ within the channel walls. The materials have been characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), powder X‐ray diffraction (PXRD), and 29Si and 13C magic‐angle spinning (MAS) NMR spectroscopy. The d‐spacing of the PMOs is found to be a function of R. Nanoindentation measurements reveal increased mechanical strength and stiffness for the PMOs with R = CH2 and C2H4 compared to silica. Films with different organic‐group content have been prepared using mixtures of silsesquioxane and tetramethylorthosilicate (TMOS) precursors. The dielectric constant (k) is found to decrease with organic content, and values as low as 1.8 have been measured for films thermally treated to cause a “self‐hydrophobizing” bridging‐to‐terminal transformation of the methene to methyl groups with concomitant loss of silanols. Increasing the organic content and thermal treatment also increases the resistance to moisture adsorption in 60 and 80 %‐relative‐humidity (RH) environments. Methene PMO films treated at 500 °C are found to be practically unchanged after five days exposure to 80 % RH. These low dielectric constants, plus the good thermal and mechanical stability and the hydrophobicity suggest the potential utility of these films as low‐k layers in microelectronics. 相似文献