Deformation behavior and microstructural evolution during the semi-solid compression of Al–4Cu–Mg alloy

The effects of the process parameters, including deformation temperature and strain rate, on the deformation behavior and microstructure of an Al–4Cu–Mg alloy, have been investigated through isothermal compression. Experiments were conducted at deformation temperatures of 540 °C, 560 °C, and 580 °C, strain rates of 1 s⁻¹, 1×10⁻¹ s⁻¹, 1×10⁻² s⁻¹, and 1×10⁻³ s⁻¹, and height reductions of 20%, 40%, and 60%. The experimental results show that deformation temperature and strain rate have significant effect on the peak flow stress. The flow stress decreases with an increase of deformation temperature and/or a decrease of the strain rate. Above a critical value of the deformation temperature, the flow stress quickly reaches a steady value. Experimental materials A and B have equiaxed and irregular grains, respectively, prior to deformation. The microstructures vary with the process parameters in the semi-solid state. For material B, the irregular grains transform to equiaxed grains in the process of semi-solid deformation, which improves the deformation behavior.     

Compression testing of a sintered Ti6Al4V powder compact for biomedical applications

In this study, the compression deformation behavior of a Ti6Al4V powder compact, prepared by the sintering of cold compacted atomized spherical particles (100–200 μm) and containing 36–38% porosity, was investigated at quasi-static (1.6×10⁻³–1.6×10⁻¹ s⁻¹) and high strain rates (300 and 900 s⁻¹) using, respectively, conventional mechanical testing and Split Hopkinson Pressure Bar techniques. Microscopic studies of as-received powder and sintered powder compact showed that sintering at high temperature (1200 °C) and subsequent slow rate of cooling in the furnace changed the microstructure of powder from the acicular alpha () to the Widmanstätten (+β) microstructure. In compression testing, at both quasi-static and high strain rates, the compact failed via shear bands formed along the diagonal axis, 45° to the loading direction. Increasing the strain rate was found to increase both the flow stress and compressive strength of the compact but it did not affect the critical strain for shear localization. Microscopic analyses of failed samples and deformed but not failed samples of the compact further showed that fracture occurred in a ductile (dimpled) mode consisting of void initiation and growth in phase and/or at the /β interface and macrocracking by void coalescence in the interparticle bond region.     

The characteristics of serrated flow in superalloy IN738LC

Serrated flow was investigated in superalloy IN738LC, a nickel-base γ′ age-hardened alloy. In this material serrated flow appeared between 350 and 450 °C and strain rate of (8.77 × 10⁻⁵ to 8.77 × 10⁻³) s⁻¹. Activation energy for this process was calculated to be 0.69–0.86 eV which is in good agreement with the values reported for similar alloys. Results show that the diffusion rate of substitutional solute atoms at this temperature range is too low to cause this effect. This suggests that the interaction of solute atoms and moving dislocation is responsible for the observed serrated flow in this alloy.     

Change in grain size and flow strength in P/M Rene 95 under isothermal forging conditions

The changes in microstructure induced by plastic deformation in hot isostatically pressed (HIPed) P/M Rene 95 under isothermal conditions are discussed. Results of the constant true strain rate compression tests are presented for initially fine (7 μm) and coarse (50 μm) grained compacts deformed at temperatures of 1050 °C, 1075 °C and 1100 °C and at strain rates in the range from 10⁻⁴ s⁻¹ to 1 s⁻¹. Under these test conditions, both the fine and coarse-grained compacts recrystallize and their grain size are refined during flow. This grain refinement gives rise to softening in both materials. Ultimately, their microstructures transform into the same equiaxed fine-grained microduplex structure at which point their flow strength becomes identical. Continued deformation at that point produces no further change in grain size or flow strength. Under this steady state regime of deformation, the microduplex grain size and flow strength are independent of the original microstructure but are conditioned by the strain rate at a given temperature. The steady state grain size increases whereas the steady flow strength decreases with a decrease in strain rate and/or an increase in temperature.     

Mechanical stability of Ca65Mg15Zn20 bulk metallic glass during deformation in the supercooled liquid region

Ca₆₅Mg₁₅Zn₂₀ bulk metallic glass (BMG) samples of dimensions 3.2 mm × 7 mm × 125 mm were prepared using a low-pressure die casting technique. These samples were ground to produce tensile test pieces in compliance with ASTM E8-04. This work is the first reported study of the tensile behaviour of Ca₆₅Mg₁₅Zn₂₀ BMG in the supercooled liquid region (105–120 °C). Two deformation conditions were used for testing: (i) constant strain rate testing from 10⁻³ to 10⁻⁴ s⁻¹ and (ii) constant load testing using loads of 20–50 N applied to a tensile sample during heating at a constant rate of 5 °C s⁻¹. The maximum elongation to failure in the BMG was in excess of 850% for constant load testing although, under isothermal testing conditions, most samples failed after 200% elongation. It is concluded that large superplastic elongations (>500%) during isothermal tensile straining is difficult in this alloy due to the onset of crystallization.     

Deep levels in GaInAs grown by molecular beam epitaxy and their concentration reduction with annealing treatment

X-ray diffraction (XRD), current–voltage (IV), capacitance–voltage (CV), deep-level transient Fourier spectroscopy (DLTFS) and isothermal transient spectroscopy (ITS) techniques are used to investigate the thermal annealing behaviour of three deep levels in Ga_0.986In_0.014As heavily doped with Si (6.8 × 10¹⁷ cm⁻³) grown by molecular beam epitaxy (MBE). The thermal annealing was performed at 625 °C, 650 °C, 675 °C, 700 °C and 750 °C for 5 min. XRD study shows good structural quality of the samples and yields an In composition of 1.4%. Two main electron traps are detected by DLTFS and ITS around 280 K, with activation energies of 0.58 eV and 0.57 eV, capture cross sections of 9 × 10⁻¹⁵ cm² and 8.6 × 10⁻¹⁴ cm² and densities of 2.8 × 10¹⁶ cm⁻³ and 9.6 × 10¹⁵ cm⁻³, respectively. They appear overlapped and as a single peak, which divides into two smaller peaks after annealing at 625 °C for 5 min.

Annealing at higher temperatures further reduces the trap concentrations. A secondary electron trap is found at 150 K with an activation energy of 0.274 eV, a capture cross section of 8.64 × 10⁻¹⁵ cm² and a density of 1.38 × 10¹⁵ cm⁻³. The concentration of this trap level is also decreased by thermal annealing.     

Excited-state absorption at 1.57 μm in U:CaF2 and Co:ZnSe saturable absorbers

Appreciable excited-state absorption (ESA) in U²⁺:CaF₂ and Co²⁺:ZnSe saturable absorbers was measured at λ=1.573 μm by optical transmission versus light fluence curves of 30–40 ns long pulses. The ground- and excited-state absorption cross-sections obtained were (9.15±0.3)×10⁻²⁰ and (3.6±0.2)×10⁻²⁰ cm², respectively, for U²⁺:CaF₂, and (57±4)×10⁻²⁰ and (12.5±1)×10⁻²⁰ cm² for Co²⁺:ZnSe. Thus, ESA is not negligible in U²⁺:CaF₂ and Co²⁺:ZnSe, as previously estimated.     

Highly conducting indium tin oxide (ITO) thin films deposited by pulsed laser ablation

Highly conducting and transparent indium tin oxide (ITO) thin films were prepared on SiO₂ glass and silicon substrates by pulsed laser ablation (PLA) from a 90 wt.% In₂O₃-10 wt.% SnO₂ sintered ceramic target. The growths of ITO films under different oxygen pressures (P_O2) ranging from 1×10⁻⁴–5×10⁻² Torr at low substrate temperatures (T_s) between room temperature (RT) and 200°C were investigated. The opto-electrical properties of the films were found to be strongly dependent on the P_O2 during the film deposition. Under a P_O2 of 1×10⁻² Torr, ITO films with low resistivity of 5.35×10⁻⁴ and 1.75×10⁻⁴ Ω cm were obtained at RT (25°C) and 200°C, respectively. The films exhibited high carrier density and reasonably high Hall mobility at the optimal P_O2 region of 1×10⁻² to 1.5×10⁻² Torr. Optical transmittance in excess of 87% in the visible region of the solar spectrum was displayed by the films deposited at Po₂≥1×10⁻² Torr and it was significantly reduced as the P_O2 decreases.     

Molecular dynamics study of the mechanical behavior of nickel nanowire: Strain rate effects

We present the analysis of uniaxial deformation of nickel nanowires using molecular dynamics simulations, and address the strain rate effects on mechanical responses and deformation behavior. The applied strain rate is ranging from 1 × 10⁸ s⁻¹ to 1.4 × 10¹¹ s⁻¹. The results show that two critical strain rates, i.e., 5 × 10⁹ s⁻¹ and 8 × 10¹⁰ s⁻¹, are observed to play a pivotal role in switching between plastic deformation modes. At strain rate below 5 × 10⁹ s⁻¹, Ni nanowire maintains its crystalline structure with neck occurring at the end of loading, and the plastic deformation is characterized by {1 1 1} slippages associated with Shockley partial dislocations and rearrangements of atoms close to necking region. At strain rate above 8 × 10¹⁰ s⁻¹, Ni nanowire transforms from a fcc crystal into a completely amorphous state once beyond the yield point, and hereafter it deforms uniformly without obvious necking until the end of simulation. For strain rate between 5 × 10⁹ s⁻¹ and 8 × 10¹⁰ s⁻¹, only part of the nanowire exhibits amorphous state after yielding while the other part remains crystalline state. Both the {1 1 1} slippages in ordered region and homogenous deformation in amorphous region contribute to the plastic deformation.     

Structure-composition-property dependence in reactive magnetron sputtered ZnO thin films

Thin films of zinc oxide (ZnO) were prepared by dc reactive magnetron sputtering on glass substrates at various oxygen partial pressures in the range 1×10⁻⁴–6×10⁻³ mbar and substrate temperatures in the range 548–723 K. The variation of cathode potential of zinc target on the oxygen partial pressure was explained in terms of target poisoning effects. The stoichiometry of the films has improved with the increase in the oxygen partial pressure. The films were polycrystalline with wurtzite structure. The films formed at higher substrate temperatures were (0 0 2) oriented. The temperature dependence of Hall mobility of the films formed at various substrate temperatures indicated that the grain boundary scattering of charge carriers was predominant electrical conduction mechanism in these films. The optical band gap of the films increased with the increase of substrate temperature. The ZnO films formed under optimized oxygen partial pressure of 1×10⁻³ mbar and substrate temperature of 663 K exhibited low electrical resistivity of 6.9×10⁻² Ω cm, high visible optical transmittance of 83%, optical band gap of 3.28 eV and a figure of merit of 78 Ω⁻¹ cm⁻¹.     

Preparation of PbO nanoparticles by microwave irradiation and their application to Pb(II)-selective electrode based on cellulose acetate

Nanosized lead oxide particles were prepared by thermal decomposition of lead hydroxycarbonate synthesized under microwave irradiation. Urea and lead nitrate were used as the starting materials. Microstructure and morphology of the products were investigated by means of XRD, AFM, TEM, and IR absorption spectra. The results indicated that well crystallized, finely dispersed and spherical -PbO nanoparticles with a size of ca. 30 nm were obtained. Meanwhile, an orthogonal phase β-PbO with a size of ca. 38 nm was also obtained when the calcinations temperature was up to 600 °C. In addition, a Pb(II)-selective electrode based on cellulose acetate was prepared using nanosized -PbO powders synthesized. The electrode exhibited a Nernstian slope of 29±1 mV per decade in a linear range of 2.5×10⁻⁵ mol L⁻¹ to 1.0×10⁻¹ mol L⁻¹ for Pb²⁺ ion. The detection limit of this electrode is down to 8.0×10⁻⁶ mol L⁻¹. This sensor has a short response time of about 10 s and could be used in a pH range of 2.0–8.0. High selectivity was obtained over a wide variety of metal ions.     

High performance very low frequency forced pendulum

A forced torsion pendulum has been constructed for the measurement of mechanical loss angle (tan δ) and elastic shear modulus in three different modes: (a) as a function of temperature (80–1250 K), at imposed frequency, during heating or cooling at imposed heating or cooling rate (0.1–5 K/min); (b) as a function of frequency (10–10⁻⁴ Hz) in isothermal conditions, and (c) as a function of amplitude (5×10⁻⁶ to 5×10⁻⁵) at imposed frequency and under isothermal conditions. The mechanical part of the pendulum has been designed in such a way that torsional plastic deformation of the specimen can be performed in situ, i.e., at low temperatures to generate fresh dislocations in metals, and at high temperatures to enhance grain boundary sliding, for instance. The whole installation is computer controlled and exhibits not only outstanding performances but also a very high capability of working in different conditions, being a useful tool for studying a large variety of mechanisms in different materials.     

Underlying mechanisms for unique elastic properties of nanocrystalline Au

In order to get an insight into the grain boundaries (GBs) in nanocrystalline (n-) metal, we prepared the high-density n-Au with ρ/ρ₀>99% by the gas-deposition method and carried out the vibrating reed measurements, where ρ/ρ₀ is the relative density referring to the bulk density. The strain amplitude dependence (SAMD) of the resonant frequency (f) and the internal friction (Q⁻¹) was measured for the strain () amplitude between 10⁻⁶ and 2×10⁻³ and for temperature between 5 and 300 K. No plastic deformations are detected for the present strain range, where f decreases for up to 10⁻⁴ and then turns to increase, showing saturation for between 10⁻⁴ and 2×10⁻³. The low temperature irradiation by 2 MeV electrons or 20 MeV protons causes an increase in the Young’s modulus at 6 K, which is surmised to reflect a modification of the anelastic process in the GB regions. In contrast, the SAMD of f is hardly modified by irradiation, suggesting that it is indicative of a collective motion of atoms in n-Au.     

Destruction of carbon disulfide in aqueous solutions by sonochemical oxidation

Carbon disulfide (CS₂) is toxic to animals and aquatic organisms, and can also decompose to carbonyl sulfide (OCS) and hydrogen sulfide (H₂S) in aqueous environment. The kinetics of the sonochemical degradation of aqueous CS₂ was studied in a batch reactor at 20 kHz and 20 °C, and the effects of process parameters (e.g. concentration, ultrasonic intensity, irradiating gas) investigated. The concentrations of unbuffered CS₂ solutions used were (6.4–7.0)×10⁻⁴, 10.5×10⁻⁴ and (13.2–13.6)×10⁻⁴ M and the intensities were varied from 14 to 50 W. The reaction rate was found to be zero-order and the rate constant for the degradation at 20 °C and 14W in air was 21.1 μM/min using the largest initial concentration range studied. At the same initial concentration range but at 50 W (39.47 W/m²) the degradation rate of CS₂ was 46.7 μM/min, more than two times that at 14 W (11.04 W/m²). The rate of CS₂ sonochemical degradation in the presence of the different gases was in the order of He>air≥N₂O>Ar; the rate with helium was found to be about three times that of argon. The formation of sulfate (SO₄²⁻) as reaction product with air as the irradiating gas was enhanced in the presence of hydrogen peroxide (H₂O₂) and inhibited in the presence of 1-butanol. The sonochemical oxidation of CS₂ may prove to be an efficient and environmentally benign way for the removal of this hazardous pollutant from natural water and wastewater.     

Effect of strain rate on high-temperature low-cycle fatigue of 17-4 PH stainless steels

The effect of strain rate (10⁻², 10⁻³ and 10⁻⁴ s⁻¹) on the low-cycle fatigue (LCF) behavior was investigated for 17-4 PH stainless steels in three different conditions at temperatures of 300–500 °C. The cyclic stress response (CSR) for Condition A tested at 300 and 400 °C showed cyclic hardening due to an influence of dynamic strain aging (DSA). An in situ precipitation-hardening effect was found to be partially responsible for the cyclic hardening in Condition A at 400 °C. For H900 and H1150 conditions tested at 300 and 400 °C, the CSR exhibited a stable stress level before a fast drop in load indicating no cyclic hardening or softening. At 500 °C, cyclic softening was observed for all given material conditions because of a thermal dislocation recovery mechanism. The cyclic softening behavior in Conditions A and H900 tested at 500 °C is attributed partially to coarsening of the Cu-rich precipitates. The LCF life for each material condition, tested at a given temperature, decreased with decreasing strain rate as a result of an enhanced DSA effect. At all given testing conditions, transgranular cracking was the common fatigue fracture mode.     

The optical and electrical properties of copper indium di-selenide thin films

Thin films of copper indium di-selenide (CIS) with a wide range of compositions near stoichiometry have been formed on glass substrates in vacuum by the stacked elemental layer (SEL) deposition technique. The compositional and optical properties of the films have been measured by proton-induced X-ray emission (PIXE) and spectrophotometry (photon wavelength range of 300–2500 nm), respectively. Electrical conductivity (σ), charge-carrier concentration (n), and Hall mobility (μ_H) were measured at temperatures ranging from 143 to 400 K. It was found that more indium-rich films have higher energy gaps than less indium-rich ones while more Cu-rich films have lower energy gaps than less Cu-rich films. The sub-bandgap absorption of photons is minimum in the samples having Cu/In ≈ 1 and it again decreases, as Cu/In ratio becomes less than 0.60. Indium-rich films show n-type conductivities while near-stoichiometric and copper-rich films have p-type conductivities. At 300 K σ, n and μ_H of the films vary from 2.15 × 10⁻³ to 1.60 × 10⁻¹ (Ω cm)⁻¹, 2.28 × 10¹⁵ to 5.74 × 10¹⁷ cm⁻³ and 1.74 to 5.88 cm² (V s)⁻¹, respectively, and are dependent on the composition of the films. All the films were found to be non-degenerate. The ionization energies for acceptors and donors vary between 12 and 24, and 3 and 8 meV, respectively, and they are correlated well with the Cu/In ratios. The crystallites of the films were found to be partially depleted in charge carriers.     

Reactions in Au/Nb bilayer thin films

The interdiffusion and intermetallic compound formation of Au/Nb bilayer thin films annealed at 200–400 °C have been investigated. The bilayer thin films were prepared by electron beam deposition. The Nb film was 50 nm thick and the Au film was 50–200 nm thick. The interdiffusion of annealed specimens was examined by measuring the electrical resistance and depth-composition profile and by transmission electron microscopy. Interdiffusion between the thin films was detected at temperatures above 325 °C in a vacuum of 10^-4 Pa. The intermetallic compound Au₂Nb₃ and other unknown phases form during annealing at over 400 °C. The apparent diffusion constants, determined from the penetration depth for annealing at 350 °C, are 3.5 × 10⁻¹⁵ m² s⁻¹ for Nb in Au and 8.6 × 110^7minus;15 m² s⁻¹ for Au in Nb. The Au surface of the bilayer films becomes uneven after annealing at over 400 °C due to the reaction.     

Superplasticity and grain boundary sliding in rolled AZ91 magnesium alloy at high strain rates

The superplastic deformation characteristics and microstructure evolution of the rolled AZ91 magnesium alloys at temperatures ranging from 623 to 698 K (0.67–0.76 T_m) and at the high strain rates ranging from 10⁻³ to 1 s⁻¹ were investigated with the methods of OM, SEM and TEM. An excellent superplasticity with the maximum elongation to failure of 455% was obtained at 623 K and the strain rate of 10⁻³ s⁻¹ in the rolled AZ91 magnesium alloys and its strain rate sensitivity m is high, up to 0.64. The dominant deformation mechanism in high strain rate superplasticity is still grain boundary sliding (GBS), which was studied systematically in this study. The dislocation creep controlled by grain boundary diffusion was considered the main accommodation mechanism, which was observed in this study.     

Room temperature indium tin oxide by XeCl excimer laser annealing for flexible display

A XeCl excimer laser (λ=308 nm) has been used to anneal Indium Tin Oxide (ITO) films deposited at 25 °C using DC magnetron sputtering. With increasing laser fluence, the film crystallinity was improved while retaining the as-deposited 111 texture. As a result of laser irradiation, the sheet resistance of 100 nm ITO films decreased from 191 Ω/□ (1.91×10⁻³ Ω cm) to 25 Ω/□ (2.5×10⁻⁴ Ω cm), while the optical transmittance in the visible range increased from 70% to more than 85%. Surface roughness and etching properties were also significantly improved following laser annealing.     

Sintering kinetics of 8Y–cubic zirconia: Cation diffusion coefficient

Zirconia ceramics, mainly of cubic phase, are used in different applications because of their particular electrical and structural properties.

After the forming stage, sintering leads to a material with suitable microstructural characteristics. The sintering process mainly depends on thermal cycle and on starting particle size and its distribution; it also depends on density and the microstructure of green material. Cubic zirconia has a high (2680 °C) melting temperature; however, effective sintering could be observed for temperatures higher than 900 °C (nanoparticles), and it may reach a final density of 96–98% the theoretical value at relative low temperatures.

The objective of this paper is to study the sintering kinetics of stabilized zirconia in its cubic phase with 8% molar of Y₂O₃ under fast firing rates up to nearly isothermal conditions. Samples were shaped from suspensions dispersed with ammonium polyacrylate by slip casting. Sintering was performed in the temperature range between 1200 °C and 1400 °C. The sintering kinetic process was followed by measuring density as a function of time. A sintering model was applied to fit the experimental data of the first steps of densification. It was observed that sintering obeys the same mechanism in the temperature and time ranges under study, which results in an activation energy of 170 kJ mol⁻¹. Sintering is controlled by Zr cation diffusion, for which a lattice diffusion coefficient of D_l = 8 × 10⁻¹² cm² s⁻¹ at 1400 °C was found, and the activation energy of the diffusion process was 223 kJ mol⁻¹.