A 39-to-45-Gbit/s multi-data-rate clock and data recovery circuit with a robust lock detector

We describe a 40-Gbit/s-class clock and data recovery (CDR) circuit with an extremely wide pull-in range. A Darlington-type voltage-controlled oscillator (VCO) is newly designed to cover the STM-256/OC-768 full-rate-clock frequencies with a wide frequency margin. We also describe a new lock detector using an exclusive-NOR gate. The CDR IC was fabricated using InP/InGaAs HBTs. Error-free operation and wide eye opening were confirmed for 40-, 43-, and 45-Gbit/s PRBS with a word length of 2/sup 31/ - 1. We attached a frequency search and phase control (FSPC) circuit to the chip as a new frequency acquisition aid, and this allows the CDR circuit to pull in throughout a 39-45-Gbit/s range. The peak-to-peak and rms jitter of the recovered clock were 3.6 and 0.48 ps, respectively.     

A 40-Gb/s clock and data recovery circuit in 0.18-/spl mu/m CMOS technology

A phase-locked clock and data recovery circuit incorporates a multiphase LC oscillator and a quarter-rate bang-bang phase detector. The oscillator is based on differential excitation of a closed-loop transmission line at evenly spaced points, providing half-quadrature phases. The phase detector employs eight flip-flops to sample the input every 12.5 ps, detecting data transitions while retiming and demultiplexing the data into four 10-Gb/s outputs. Fabricated in 0.18-/spl mu/m CMOS technology, the circuit produces a clock jitter of 0.9 ps/sub rms/ and 9.67 ps/sub pp/ with a PRBS of 2/sup 31/-1 while consuming 144 mW from a 2-V supply.     

10 GHz full-rate clock and data recovery circuit in 0.18 /spl mu/m CMOS without external reference clock

The design of a fully monolithic integrated 10 GHz full-rate clock and data recovery (CDR) circuit in 0.18 /spl mu/m digital CMOS technology, which employs an injection phase-locked loop (PLL) technique is presented. The CDR operating without the external reference exhibits a capture range of 200 MHz while consuming 205 mA current from 1.8 V supply including the output buffer. The recovered clock signal with 250 mV/sub pp/ pseudorandom bit Sequence input data of length 2/sup 31/-1 exhibits 7.9 ps of peak-to-peak (p-p) and 1.1 ps of root-mean-square (RMS) jitter. The measured clock phase noise at 1 MHz offset is approximately -109 dBc/Hz.     

A 33-mW 8-Gb/s CMOS clock multiplier and CDR for highly integrated I/Os

A 0.622-8-Gb/s clock and data recovery (CDR) circuit using injection locking for jitter suppression and phase interpolation in high-bandwidth system-on-chip solutions is described. A slave injection locked oscillator (SILO) is locked to a tracking aperture-multiplying DLL (TA-MDLL) via a coarse phase selection multiplexer (MUX). For the fine timing vernier, an interpolator DAC controls the injection strength of the MUX output into the SILO. This 1.2-V 0.13-/spl mu/m CMOS CDR consumes 33 mW at 8Gb/s. Die area including voltage regulator is 0.08 mm/sup 2/. Recovered clock jitter is 49 ps pk-pk at a 200-ppm bit-rate offset.     

A 155.52 mbps-3.125 gbps continuous-rate clock and data recovery circuit

A 155.52 Mbps-3.125 Gbps continuous-rate clock and data recovery (CDR) circuit using the full-rate bang-bang phase detector is presented. A frequency detector is proposed to eliminate the harmonic locking problem even with a wide range of data rates and its theoretical analysis is also discussed. A quadrature divider is also presented to generate the clocks with accurate quadrature phases. This CDR circuit has been realized in a 0.18-/spl mu/m CMOS process and its die area is 1.1/spl times/0.8 mm/sup 2/. It consumes 95 mW at the highest bit rate of 3.125 Gbps. It can recover the NRZ data of a 2/sup 31/-1 PRBS with the bit rate ranging from 155.52 Mbps to 3.125Gbps for the incremental frequency acquisition and the NRZ data of a 2/sup 7/-1 PRBS for the decremental frequency acquisition. All the measured bit error rates are less than 10/sup -12/.     

A 200-Mbps/spl sim/2-Gbps continuous-rate clock-and-data-recovery circuit

A 200-Mbps/spl sim/2-Gbps continuous-rate clock-and-data-recovery (CDR) circuit using half-rate clocking is presented. To detect the data with wide-range bit rates, a frequency tracing circuit (FTC) is used to aid the frequency acquisition. A wide-range and low gain voltage-controlled oscillator (VCO) is also presented by using analog and digital controlled mechanisms. A two-level bang-bang phase detector is utilized to improve the jitter performance and speed up the locking process. This CDR circuit has been realized in a 2P4M 0.35-/spl mu/m CMOS process. The experimental results show that this CDR circuit with the proposed FTC can receive 2/sup 31/-1 pseudorandom bit stream when the bit rate ranges from 200 Mbps to 2 Gbps without the harmonic-locking issue. All measured bit error rates are below 10/sup -12/. The measured root-mean-square and peak-to-peak jitters are 5.86 ps and 41.8 ps, respectively, at 2 Gbps.     

A CMOS clock recovery circuit for 2.5-Gb/s NRZ data

This paper describes a phase-locked clock recovery circuit that operates at 2.5 Gb/s in a 0.4-μm digital CMOS technology. To achieve a high speed with low power dissipation, a two-stage ring oscillator is introduced that employs an excess phase technique to operate reliably across a wide range. A sample-and-hold phase detector is also described that combines the advantages of linear and nonlinear phase detectors. The recovered clock exhibits an rms jitter of 10.8 ps for a PRBS sequence of length 2⁷-1 and a phase noise of -80 dBc/Hz at a 5-MHz offset. The core circuit dissipates a total power of 33.5 mW from a 3.3-V supply and occupies an area of 0.8×0.4 mm²     

A 10-Gb/s CDR/DEMUX with LC delay line VCO in 0.18-/spl mu/m CMOS

A monolithic 10-Gb/s clock/data recovery and 1:2 demultiplexer are implemented in 0.18-/spl mu/m CMOS. The quadrature LC delay line oscillator has a tuning range of 125 MHz and a 60-MHz/V sensitivity to power supply pulling. The circuit meets SONET OC-192 jitter specifications with a measured jitter of 8 ps p-p when performing error-free recovery of PRBS 2/sup 31/-1 data. Clock and data recovery (CDR) is achieved at 10 Gb/s, demonstrating the feasibility of a half-rate early/late PD (with tri-state) based CDR on 0.18-/spl mu/m CMOS. The 1.9/spl times/1.5 mm/sup 2/ IC (not including output buffers) consumes 285 mW from a 1.8-V supply.     

A 3.125-Gb/s clock and data recovery circuit for the 10-Gbase-LX4 Ethernet

A 3.125-Gb/s clock and data recovery (CDR) circuit using a half-rate digital quadricorrelator frequency detector and a shifted-averaging voltage-controlled oscillator is presented for 10-Gbase-LX4 Ethernet. It can achieve low-jitter operation and improve pull-in range without a reference clock. This CDR circuit has been fabricated in a standard 0.18-/spl mu/m CMOS technology. It occupies an active area of 0.6 /spl times/ 0.8 mm/sup 2/ and consumes 83 mW from a single 1.8-V supply. The measured bit-error rate is less than 10/sup -12/ for 2/sup 7/ - 1 PRBS 3.125-Gb/s data. It can meet the jitter tolerance specifications for the 10-Gbase-LX4 Ethernet application.     

SiGe clock and data recovery IC with linear-type PLL for 10-Gb/sSONET application

An integrated 10 Gb/s clock and data recovery (CDR) circuit is fabricated using SiGe technology, It consists of a linear-type phase-locked loop (PLL) based on a single-edge version of the Hogge phase detector, a LC-tank voltage-controlled oscillator (VCO) and a tri-state charge pump. A PLL equivalent model and design method to meet SONET jitter requirements are presented. The CDR was tested at 9.529 GB/s in full operation and up to 13.25 Gb/s in data recovery mode. Sensitivity is 14 mV_pp at a bit error rate (BER)=10^-9 . The measured recovered clock jitter is less than 1 ps RMS. The IC dissipates 1.5 W with a -5 V power supply     

A 10-Gb/s CMOS clock and data recovery circuit with a half-rate binary phase/frequency detector

A 10-Gb/s phase-locked clock and data recovery circuit incorporates a multiphase LC oscillator and a half-rate phase/frequency detector with automatic data retiming. Fabricated in 0.18-/spl mu/m CMOS technology in an area of 1.75/spl times/1.55 mm/sup 2/, the circuit exhibits a capture range of 1.43 GHz, an rms jitter of 0.8 ps, a peak-to-peak jitter of 9.9 ps, and a bit error rate of 10/sup -9/ with a pseudorandom bit sequence of 2/sup 23/-1. The power dissipation excluding the output buffers is 91 mW from a 1.8-V supply.     

5Gb/s0.18μm CMOS半速率时钟与数据恢复电路设计

基于具体的系统需求,采用标准0.18μm CMOS工艺,设计了一种半速率bang-bang型时钟与数据恢复(CDR)电路。该CDR电路主要由改进型半速率鉴相器、带粗控端的环形压控振荡器(VCO)以及信道选择器等模块构成。其中,改进型半速率鉴相器通过增加四个锁存器,不但能获得较好的鉴相性能,还能使分接输出的两路数据自动实现相位对齐。带粗控端的环形VCO能够解决高振荡频率范围需求与低调谐增益需求之间的矛盾。信道选择器则能解决信道交叉出错问题。仿真结果表明,电路工作正常,在1.8V电压下,电路功耗为140mW,恢复出的时钟和数据抖动峰峰值分别为3.7ps和5ps。     

A 2.5-Gb/s fully-integrated, low-power clock and recovery circuit in 0.18-μm CMOS

Based on the devised system-level design methodology, a 2.5-Gb/s monolithic bang-bang phase-locked clock and data recovery (CDR) circuit has been designed and fabricated in SMIC's 0.18-μm CMOS technology. The Pottbacker phase frequency detector and a differential 4-stage inductorless ring VCO are adopted, where an additional current source is added to the VCO cell to improve the linearity of the VCO characteristic. The CDR has an active area of 340 × 440μm2, and consumes a power of only about 60 mW from a 1.8 V supply voltage, with an input sensitivity of less than 25 mV, and an output single-ended swing of more than 300 mV. It has a pull-in range of 800 MHz, and a phase noise of-111.54 dBc/Hz at 10 kHz offset. The CDR works reliably at any input data rate between 1.8 Gb/s and 2.6 Gb/s without any need for reference clock, off-chip tuning, or external components.     

Low jitter and multirate clock and data recovery circuit using a MSADLL for chip-to-chip interconnection

A fully integrated clock and data recovery circuit (CDR) using a multiplying shifted-averaging delay locked loop and a rate-detection circuit is presented. It can achieve wide range and low jitter operation. A duty-cycle-insensitive phase detector is also proposed to mitigate the dependency on clock duty cycle variations. The experimental prototype has been fabricated in a 0.25-/spl mu/m 1P5M CMOS technology and occupies an active area of 2.89 mm/sup 2/. The measured CDR could operate from 125 Mb/s to 2.0 Gb/s with a bit error rate better than 10/sup -12/ from a 2.5-V supply. Over the entire operating frequency range, the maximum rms jitter of the recovered clock is less than 4 ps.     

Differential CMOS circuits for 622-MHz/933-MHz clock and datarecovery applications

This paper describes the architecture and components of a high-speed clock and data recovery (CDR) circuit. Fully differential CMOS circuits are presented for an integrated physical layer controller of a 622-Mb/s (OC-12) system, although the design can be used in other systems with clock speeds in the 622-933-MHz range. Simulations and experimental results are presented for the building blocks including novel designs for a current-controlled oscillator (CCO) and a differential charge pump. The CCO is based on a two-stage ring oscillator. It consists of parallel differential amplifier pairs which reliably generate the necessary phase shift and gain to fulfill the oscillation conditions over process and temperature variations. Two test chips are implemented in 0.35-μm CMOS. One contains partitioned building blocks of a phase-locked loop (PLL) which, together with an external loop filter, can be used for flexible testing and CDR applications. The other chip is a monolithic CDR with integrated loop filter. It exhibits a power consumption of 0.2 W and a measured rms clock jitter of 12.5 ps at 933 MHz     

低电压高速CMOS电流模线性鉴相器的设计

在高速时钟和数据恢复电路(CDR)中一般采用高数率比线性鉴相器(LPD)来降低鉴相器(PD)和压控振荡器(VCO)的工作频率.从电路结构的复杂度、芯片面积以及功耗三方面,对三种不同速率比LPD电路进行了分析比较;针对2.5 Gbit/sCDR电路的具体应用,分别设计了半数率比和1/4数率比LPD,均通过了功能仿真;最后比较仿真结果,在2.5 Gbit/s应用下,半数率比结构是合理的选择.电路设计采用TSMC 0.18 μm CMOS混合信号工艺,LPD电路均采用低电压高速电流模逻辑(CML)实现.     

A Jitter-Tolerance-Enhanced CDR Using a GDCO-Based Phase Detector

A jitter-tolerance-enhanced 10 Gb/s clock and data recovery (CDR) circuit is presented. The proposed architecture cascades 2 half-rate CDRs with different loop bandwidth to relax the design bottleneck and the predicted jitter tolerance can be enhanced without sacrificing the jitter transfer. By using a gated digital-controlled oscillator (GDCO), the proposed GDCO-based phase detector may reduce the cost of this architecture and achieve a wide linear range. This CDR circuit has been fabricated in a 0.13 mum CMOS technology and consumes 60 mW from a 1.5 V supply. It occupies an active area of 0.36 mm². The measured rms jitter is 0.96 ps and the peak-to-peak jitter is 7.11 ps for a 10 Gb/s 2⁷-1 PRBS. The measured bit error rate for a 10 Gb/s 2⁷-1PRBS is less than 10^-12.     

40 Gb/s Transimpedance-AGC Amplifier and CDR Circuit for Broadband Data Receivers in 90 nm CMOS

High-speed front-end amplifiers and CDR circuits play critical roles in broadband data receivers as the former needs to perform amplification at high data rate and the latter has to retime the data with the extracted low-jitter clock. In this paper, the design and experimental results of 40 Gb/s transimpedance-AGC amplifier and CDR circuit are described. The transimpedance amplifier incorporates reversed triple-resonance networks (RTRNs) and negative feedback in a common-gate configuration. A mathematical model is derived to facilitate the design and analysis of the RTRN, showing that the bandwidth is extended by a larger factor compared to using the shunt-series peaking technique, especially in cases when the parasitic capacitance is dominated by the next stage. Operating at 40 Gb/s, the amplifier provides an overall gain of 2 kOmega and a differential output swing of 520 mV_pp with for input spanning from to . The measured integrated input-referred noise is 3.3muA_rms. The half-rate CDR circuit employs a direction-determined rotary-wave quadrature VCO to solve the bidirectional-rotation problem in conventional rotary-wave oscillators. This guarantees the phase sequence while negligibly affecting the phase noise. With 40 Gb/s 2³¹ - 1 PRBS input, the recovered clock jitter is and 0.7ps_rms. The retimed data exhibits 13.3 ps_pp jitter with BER . Fabricated in 90 nm digital CMOS technology, the overall amplifier consumes 75 mW and the CDR circuit consumes 48 mW excluding the output buffers, all from a 1.2 V supply.     

InP DHBT-Based Monolithically Integrated CDR/DEMUX IC Operating at 80 Gbit/s

In this paper, a monolithically integrated clock and data recovery (CDR) circuit with 1:2 demultiplexer (DEMUX), which is intended for use in 80 Gbit/s optical fiber links, is presented. The integrated circuit (IC) is manufactured using an in-house InP double heterostructure bipolar transistor (DHBT) technology, exhibiting cut-off frequency values of more than 220 GHz for both$f_T$and$f_max $. The CDR circuit in the topology of a phase-locked loop (PLL) is mainly composed of a half-rate linear phase detector including a 1:2 demultiplexer (DEMUX), a loop filter, and a voltage-controlled oscillator (VCO). Hence, the corresponding architecture of each of these components as well as the applied circuit design technique are extensively addressed. Concerning the performance achieved by the CDR/DEMUX IC, the recovered and demultiplexed 40 Gbit/s data from an 80 Gbit/s input signal feature clear eye opening with a signal swing as high as 600$hboxmV_ pp$. The extracted 40 GHz clock signal shows a phase noise as low as$- hbox98~dBc/hboxHz$at 100 kHz offset frequency. The corresponding rms jitter amounts to 0.37 ps while the peak-to-peak jitter is as low as 1.66 ps. At a single supply voltage of$-hbox4.8~V$, the power consumption of the full CDR/DEMUX IC amounts to 1.65 W. To the authors' best knowledge, this work demonstrates the first CDR circuit at the achieved data rate, regardless of all the competing semiconductor technologies.     

2.5-Gb/s low-jitter low-power monolithically integrated optical receiver

A high-scale integrated optical receiver including a preamplifier, a limiting amplifier, a clock and data recovery (CDR) block, and a 1:4 demultiplexer (DEMUX) has been realized in a 0.25???m CMOS technology. Using the loop parameter optimization method and the low-jitter circuit design technique, the rms and peak-to-peak jitter of the recovered 625-MHz clock are 9.4 and 46.3?ps, respectively, which meet the jitter specifications stipulated in ITU-T recommendation G.958. The recovered and frequency divided 625?MHz clock has a phase noise of ?83.8 dBc/Hz at 20?kHz offset in response to 2.5?Gb/s PRBS input data (2²³?C1), and the 2.5?Gb/s PRBS data has been demultiplexed into four 625?Mb/s data. The power dissipation is only 0.3?W under a single 3.3 V supply (excluding output buffers).