δ-Bit serial binary addition with linear threshold networks

In this paper we investigate δ-bit serial addition in the context of feed-forward linear threshold gate based networks. We show that twon-bit operands can be added in $2\left\lceil {\sqrt n } \right\rceil $ overall delay with a feed-forward network constructed with $\left\lceil {\sqrt n } \right\rceil + 1$ linear threshold gates and $\frac{1}{2}\left( {5\left\lceil {\sqrt n } \right\rceil ^2 + 9\left\lceil {\sqrt n } \right\rceil } \right) + 2$ latches. The maximum weight value is $2^{\left\lceil {\sqrt n } \right\rceil } $ and the maximum fan-in is $3\left\lceil {\sqrt n } \right\rceil + 1$ . We also investigate the implications our scheme have to the performance and the cost under small weights and small fan-in requirements. We deduce that if the weight values are to be limited by a constantW, twon-bit operands can be added in $\left[ {\log W} \right] + \tfrac{n}{{\left[ {\log W} \right]}}$ overall delay with a feed-forward network that has the implementation cost [logW]+1, in terms of linear threshold gates, $\tfrac{1}{2}(5[\log W]^2 + 9[\log W]) + 2$ in terms of latches and a maximum fan-in of 3[logW]+1. We also prove that, if the fan-in values are to be limited by a constantF+1, twon-bit operands can be added in $[\tfrac{F}{3}] + \tfrac{n}{{[\tfrac{F}{3}]}}$ overall delay with a feed-forward network that has the implementation cost $[\tfrac{F}{3}] + 1$ , in terms of linear threshold gates, $\tfrac{1}{2}(5[\tfrac{F}{3}]^2 + 9[\tfrac{F}{3}]) + 2$ in terms of latches, and a maximum weight value of $2^{[\tfrac{F}{3}]} $ . An asymptotic bound of $O(\tfrac{n}{{\log n}})$ is derived for the addition overall delay in the case that the weight values have to be linearly bounded, i.e., in the order ofO(n). The implementation cost in this case is in the order ofO(logn), in terms of linear threshold gates, and in the order ofO(log² n), in terms of latches. The maximum fan-in is in the order ofO(logn). Finally, a partition technique, that substantially reduces the overall cost of the implementation for all the schemes in terms of delay, latches, weights, and fan-in with some few additional threshold gates, is also presented.     

A study of the electrical and optical properties of Si delta-doped GaAs layers grown by MBE on a (111)A GaAs surface misoriented toward the [2\bar 1\bar 1] direction

Electrical and photoluminescence studies of MBE-grown Si delta-doped GaAs structures at a varied partial pressure ratio P _As /P _Ga =γ on substrates with (111)Ga orientation and misoriented toward the [2 $\bar 1\bar 1$ ] direction have been performed. Hall effect measurements demonstrated that the conduction type changes from p to n on raising the As pressure (i.e., γ). The observed changes in the photoluminescence spectra are interpreted in terms of a kinetic approach based on different dangling bond densities on terraces and steps of the vicinal surface appearing on [2 $\bar 1\bar 1$ ] substrates misoriented toward the [2 $\bar 1\bar 1$ ] direction.     

Design and modeling of high-resolution multibit log-domain \Delta \Sigma modulators

Log-domain Delta-Sigma ( $\Delta \Sigma$ ) modulators are attractive for implementing analog-to-digital (A/D) converters (ADCs) targeting low-power low-voltage applications. Previously reported log-domain $\Delta \Sigma$ modulators were limited to 1-bit quantization and, hence, could not benefit from the advantages associated with multibit quantization (namely, reduced in-band quantization noise, and increased modulator stability). Unlike classical $\Delta \Sigma$ modulators, directly extending a log-domain $\Delta \Sigma$ modulator with a 1-bit quantizer to a log-domain $\Delta \Sigma$ modulator with a multibit quantizer is challenging, in terms of CMOS circuit implementation. Additionally, the realization of log-domain $\Delta \Sigma$ modulators targeting high-resolution applications necessitates minimization of distortion and noise in the log-domain loop-filter. This paper discusses the challenges of multibit quantization and digital-to-analog (D/A) conversion in the log-domain, and presents a novel multibit log-domain $\Delta \Sigma$ modulator, practical for CMOS implementation. SIMULINK models of log-domain $\Delta \Sigma$ modulator circuits are proposed, and the effects of various circuit non-idealities are investigated, including the effects of log-domain compression–expansion mismatch. Furthermore, this paper proposes novel low-distortion log-domain analog blocks suitable for high-resolution analog-to-digital (A/D) conversion applications. Circuit simulation results of a proposed third-order 3-bit class AB log-domain $\Delta \Sigma$ loop-filter demonstrate 10.4-bit signal-to-noise-and-distortion-ratio (SNDR) over a 10 kHz bandwidth with a $0.84\,V_{pp}$ differential signal input, while operating from a 0.8 V supply and consuming a total power of $35.5\,\upmu \hbox {W}.$      

WCDMA Multiclass Downlink Capacity and Interference Statistics of Cigar-Shaped Microcells in Highways

In this paper, the multiclass downlink capacity and the interference statistics of the sectors of a cigar-shaped microcells using wideband code-division multiple-access with soft handover mode are analyzed. The two-slope propagation model with log-normal shadowing is used in the analysis where a model of 8 cigar-shaped microcells is utilized. The performance of the downlink is studied for different [sector range R, standard deviation of the shadowing ( $\sigma _{1}$ and $\sigma _{2})$ and propagation exponents ( $\text{ s}_{1}$ and $\text{ s}_{2})$ ]. It is found that increasing the sector range from 500 to 1,000 m will increase the sector downlink capacity. Also, it is found that increasing the value of the propagation parameters ( $\sigma _{1}$ and $\sigma _{2})$ will reduce the downlink sector capacity. It is noticed that, the effect of changing the propagation exponent $\text{ s}_{1}$ is null while increasing the propagation exponent $\text{ s}_{2}$ will increase the downlink capacity.     

Effect of the stoichiometric composition of the Si(111)\sqrt {21} × \sqrt {21} -(Au, Ag) surface phase on substrate conductivity

The conductivity of a silicon substrate with a Si(111) $\sqrt {21} $ × $\sqrt {21} $ -(Au, Ag) surface phase is studied. It is found that the surface conductivity of such a substrate varies depending on the ratio of the amounts of gold and silver in the given structure. An analysis of the behavior of the Si(111) $\sqrt {21} $ × $\sqrt {21} $ -(Au, Ag) surface conductivity during silver adsorption indicates the effect of a space-charge layer in the surface region of the substrate on the measurement results.     

Modification of Drude model on the free carrier property of IV-VI compound semiconductor in magnetic field

A general analytical expression is reported for the Drude model's dielectric function of free carrier in multi-valley IV-VI compound semiconductor in the magnetic field. The modifications of the energy band non-parabolicity and free carrier re-population are introduced to the dielectric function in combination with the $\vec k \cdot \vec P$ model. The difference of the dielectric function between the modified Drude model and the classical Drude model is demonstrated by the calculation for the typical IV-VI compound semiconductor material PbTe.     

Transparent Antenna Solutions for Adaptive Coverage Systems

Roll out of 3G or expansion of maturing 2G, $2\frac{1}{2}$ G networks—could promote implementation of more flexible infra structure solutions, as resource limitations can make further development or ad-hoc expansion difficult, with the currently used traditional fixed sector base stations. Vendor transparency and possible system transparency is a current feature of most roof installations in 2G and $2\frac{1}{2}$ G networks, i.e. the antenna system can be acquired independently from base station equipment vendors. This paper describes Adaptive Coverage System (ACS) solutions that maintain similar vendor and system transparency, so no extra supplier constraints are put on possible installation of an ACS in current and future networks.     

Formation of a Buffer Layer for Graphene on C-Face SiC{0001}

Graphene films prepared by heating the SiC $ (000\bar{1}) $ surface (the C-face of the {0001} surface) in a Si-rich environment have been studied using low-energy electron diffraction (LEED) and low-energy electron microscopy. Upon graphitization, an interface with $ \sqrt {43} \times \sqrt {43} - R \pm 7.6^\circ $ symmetry is observed by in situ LEED. After oxidation, the interface displays $ \sqrt 3 \times \sqrt 3 - R 30^\circ $ symmetry. Electron reflectivity measurements indicate that these interface structures arise from a graphene-like “buffer layer” that forms between the graphene and the SiC, similar to that observed on Si-face SiC. From a dynamical LEED structure calculation for the oxidized C-face surface, it is found to consist of a graphene layer sitting on top of a silicate (Si₂O₃) layer, with the silicate layer having the well-known structure as previously studied on bare SiC $ (000\bar{1}) $ surfaces. Based on this result, the structure of the interface prior to oxidation is discussed.     

Influence of a strong longitudinal static electric field on free carrier faraday effect in an n-type InSb at room temperature at submillimeter wave frequencies

The expression for free carrier Faraday rotation θ and for ellipticity Δ, as the function of the applied parallel static electric field \(\mathop {E_0 }\limits_ \to \) and static magnetic field \(\mathop {B_0 }\limits_ \to \) for a given value of wave angular frequency and electron concentration N₀, are obtained and theoretically analyzed with the aid of one-dimensional linearized wave theory and Kane's non-parabolic isotropic dispersion law. It is shown that the maximum Faraday rotation occurs near the cyclotron resonance condition, which can be expressed as \(\chi \omega = \omega _{ce} \) , where \(\chi = 1{1 \mathord{\left/ {\vphantom {1 {\sqrt {1 - ({{v_0 } \mathord{\left/ {\vphantom {{v_0 } {v_c }}} \right. \kern-0em} {v_c }})^2 } }}} \right. \kern-0em} {\sqrt {1 - ({{v_0 } \mathord{\left/ {\vphantom {{v_0 } {v_c }}} \right. \kern-0em} {v_c }})^2 } }}\) , \(v_c = \sqrt {{{\varepsilon _g } \mathord{\left/ {\vphantom {{\varepsilon _g } {2m}}} \right. \kern-0em} {2m}}} *\) , and \(\omega _{ce} = ({{eB_0 } \mathord{\left/ {\vphantom {{eB_0 } {m*}}} \right. \kern-0em} {m*}})\) . Here m^* and e denote the effective mass and charge of electron, respectively. ?_g is the forbidden bandgap of semiconductor. v₀ is the carrier drift velocity, which is a non-linear function of E₀ in high field condition. A possibility of a simple way of determining the non-linear “v₀ vs E₀” characteristics of semiconductors by the measurement of Faraday rotation is also discussed.     

Numerical analysis of open circular longitudinally magnetized p-Ge and n-InSb waveguides

By means of “coupled” modes, there have been studied the dispersion dependencies of the main and three higher modes of open circular $\hat \varepsilon $ -gyrotropic waveguides made of semiconductor materials having electron or hole conductivity. Dispersion dependencies of such waveguides have been studied at various biasing magnetizing field inductions B and concentrations N of charge carriers. Cut-off frequency dependence on concentration N has been computed.     

Quantized IR properties reconfirmed in the CO and SiO surface oscillators present in the surface layer of A bamboo stem

From analysis of diffusion diagrams of CO stretching band (2500～2180 cm^?1), bending band (800～200 cm^?1) and SiO stretching band (1100～700 cm^?1) measured in a skin surface layer of a bamboo stem (silicate cellulose), azimuthal directions where oscillators oriented were shown as (?'=?-90) ?_N=a·N-b, with a=28.3, 2×28, 22.7, b=25, 47.5, 10. And N=1,2.....14, N=1, .....6. N=1,2.....16. The optical activity (reflection integral) was shown for the CO stret. band as M_i(N)=a·N+b, with a=21.8, b=42 and N =1,2.....9. And for the bending band as M_i(N)=a·N² +b·N?c, with a=1.87×10¹, b=3.73×10³, c=7.06×10² with N=1,2.....9. Six stepnized fine series in CO weak reflection bands were confirmed as, \(\bar v = A \cdot N^2 + B \cdot N + C (cm^{ - 1} )\) and \(\bar v_{C - 1} = A \cdot N^{1/2} + B (cm^{ - 1} )\) with N=1,2.....22. Mean values of the vibrational quantized states of the A, B and C-series in the SiO stretching weak band with R?1.0% were shown as, \(\overline {\Delta E} _m = 4.54 \times \bar v_{\text{m}}^{\text{2}} - 1.449 \times \bar v_m + 1.27 \times 10^7 \) (meV) with \(\bar v = E/hc\) .     

A novel image segmentation model with an edge weighting function

A variational model for image segmentation consists of a data term and a regularization term. Usually, the data term is chosen as squared $\text{ L }_{2}$ norm, and the regularization term is determined by the prior assumption. In this paper, we present a novel model in the framework of MAP (maximum a posteriori). A new iteratively reweighted $\text{ L }_{2}$ norm is used in the data term, which shares the advantages of $\text{ L }_{2}$ and mixed $\text{ L }_{21}$ norm. An edge weighting function is addressed in the regularization term, which enforces the ability to reduce the outlier effects and preserve edges. An improved region-based graph cuts algorithm is proposed to solve this model efficiently. Numerical experiments show our method can get better segmentation results, especially in terms of removing outliers and preserving edges.     

Extended Robust \mathcal{H}_{2} and \mathcal{H}_{\infty} Filter Design for Discrete Time-Invariant Linear Systems with Polytopic Uncertainty

This paper is concerned with the problem of robust $\mathcal{H}_{2}$ and $\mathcal{H}_{\infty}$ filter design for discrete-time linear time-invariant systems with polytopic parameter uncertainties. Less conservative robust $\mathcal{H}_{2}$ and $\mathcal{H}_{\infty}$ filter design procedures are proposed in terms of single-parameter minimization problems with linear matrix inequality constraints. To this end, we generalize the filter structures available in the literature to date in such a way that the filter’s next state is built by summing the filter’s states over several samples from the past to the present. For stability of the filtering error system, the homogeneous polynomial parameter-dependent Lyapunov functions are employed. Finally, illustrative examples are given to demonstrate the merits of the proposed methods.     

Chaotic dynamics of the fractional order nonlinear system with time delay

This paper presents the fractional order model of a nonlinear autonomous continuous-time difference-differential equation with only one variable. Numerical simulation results of the fractional order model demonstrate the existence of chaos when system order $q\ge 0.2$ . Values of the delay time $\tau $ in which chaotic behavior is observed at system order $q$ are quantitatively defined using the largest Lyapunov exponents obtained from the output time series.     

Soft X-ray Absorption and Photoemission Spectroscopy Study of Cobalt-Based Thermoelectric Oxides: \hbox{Ca}_3\hbox{Co}_4\hbox{O}_9, \hbox{Ca}_3\hbox{Co}_2\hbox{O}_6, and \hbox{Bi}_{2}\hbox{Sr}_{2}\hbox{Co}_2\hbox{O}_{y}

The electronic structures of Co-based potential thermoelectric (TE) oxides, including $\hbox{Ca}_3\hbox{Co}_4\hbox{O}_9$ and $\hbox{Bi}_{2}\hbox{Sr}_{2}\hbox{Co}_2\hbox{O}_{y}$ (y = 8 + δ) single crystals and polycrystalline $\hbox{Ca}_3\hbox{Co}_2\hbox{O}_6$ , have been investigated by employing soft x-ray absorption spectroscopy (XAS) and photoemission spectroscopy (PES). Co 2p XAS measurements show that Co ions are nearly trivalent ( $\hbox{Co}^{3+}$ ) in all of these Co-based TE oxides with a small mixture of $\hbox{Co}^{4+}$ ions in $\hbox{Bi}_{2}\hbox{Sr}_{2}\hbox{Co}_2\hbox{O}_{y}$ . Valence-band PES and O 1s XAS measurements show that the occupied Co 3d states are located at the top of the valence bands and that the lowest unoccupied states have the primarily Co 3d character, respectively. These findings suggest the importance of the Co 3d electronic structures in determining TE properties of these Co-based oxides.     

Decentralized \mathcal{L}_{2}–\mathcal{L}_{\infty} Filtering for Interconnected Markovian Jump Systems with Delays

This paper deals with the problem of decentralized $\mathcal{L}_{2}$ – $\mathcal{L}_{\infty}$ filtering for a class of interconnected (or large-scale) Markovian jump systems with constant time delays. The purpose is to present delay-dependent conditions for the existence of mode-dependent decentralized filters, which guarantees that the filtering error system is stochastically stable with a prescribed $\mathcal{L}_{2}$ – $\mathcal{L}_{\infty}$ disturbance attenuation level. Such a purpose is achieved by using a mode-dependent centralized Lyapunov functional together with the so-called Jensen’s inequality. The obtained synthesis conditions are expressed in terms of linear matrix inequalities (LMIs), which leads to a convex design method for the concerned filters. An example including numerical and simulation results is provided finally to illustrate the effectiveness of the proposed design method.     

Statistical Analysis of Cognitive Radio Operation in a Periodic Pattern of Sensing and Transmission

A Cognitive Radio must sense the channel to detect spectrum holes. To this end, it senses the channel for $T_S$ and transmits its data for $N T_S$ , if the channel is not occupied by Primary User. It is expected that the more frequent arrivals of PU, characterized by the arrival rate $\lambda $ , provides CR with less opportunity. The aim of this paper is two-fold: analysis of the interaction between $N$ and $\lambda $ , as well as the access time of CR on the one hand and study of the possible benefits a variable decreasing modulation order might provide for CR on the other. In both cases, data rate of CR and the interference it causes for PU are considered as the performance measures.     

A Rate \text{ M }_{\mathrm{T}} Full Diversity STF Block Coded 4\times 4 MIMO-OFDM System with Reduced Complexity

Multiple input multiple output (MIMO) communication systems with orthogonal frequency division multiplexing (OFDM) has a great role to play for 4G broadband wireless communications. In this paper, a space time frequency (STF) code is presented with reduced decoder complexity and to achieve code rate $\text{ M }_\mathrm{T}$ with full diversity of $\text{ M }_{\mathrm{T}} \text{ M }_{\mathrm{R}} \text{ N }_{\mathrm{b}}$ L i.e., product of number of transmit antennas ( $\text{ M }_\mathrm{T}$ ), receive antennas $(\text{ M }_{\mathrm{R}})$ , fading blocks $(\text{ N }_{\mathrm{b}})$ and channel taps (L). The maximum achievable diversity with high rate of STF block coded MIMO-OFDM is analyzed and verified by simulation results. The decoder complexity is resolved by employing several approaches like maximum likelihood (ML), sphere decoder (SD) and array processing. The performance of STF code is compared with existing layered algebraic STF code in terms of decoder complexity and bit error rate (BER). Further, the closed form expressions for BER performance of STFBC MIMO-OFDM systems are derived and evaluated for frequency selective block fading channels with MPSK constellations.     

The First Year Nursing Students’ Achievement and Critical Thinking in Local Wisdom Course Using Problem Based Learning Process

The purpose of this one group—pre test post test design classroom research was to examine learning achievement, critical thinking and satisfaction of first year nurse students at school of nursing during academic year 2011. In the research activity, 94 students participated in three weeks for each scenario in Local Wisdom and Health Care which composed of 4 scenarios. Problem based learning process were included the preparation of facilitators, preparation of learners, and problem/scenario based assignments. The instruments composed of 1) 135 items, 4 multiple choices test which were covered behavioral objectives and blue print of test and validated by course lecturers 2) opinion evaluation form, open ended questionnaire and 3) the critical thinking questionnaire, 80 items in five domains which are Inference, Recognition of Assumption, Deduction, Interpretation, and Evaluation of Argument with internal consistency of .73. Data were analyzed using frequency, percentage, mean, standard deviation, percentile, t test and $\chi ^{2}$ test. It was found that the highest score of learning achievement was 88.79 % while the lowest score was 70.33 %, average learning achievement score was 80.60 $(\pm 3.47)\%$ . The highest grade levels were B+ and B equally (41.49 %). Students demonstrated higher overall critical thinking $(49.62 \pm 5.78)$ after undergone problem based learning process than before the problem based learning process $(46.69 \pm 6.00)$ statistically significance $(\text{ t}\,=\,4.443, p\,<\,.05)$ . Inference and Recognition of Assumption domain after PBL process were better than their own thoughts before PBL process significantly (t = 2.288, $p\,<\,.05$ ; t = 6.287, $p\,<\,.05$ , respectively). The ability of critical thinking was found that the high, moderate and low level (percentile $>75, 25-75$ and $<25$ ) after PBL were difference from the ability before the process significantly $(\chi ^{2}=12.219, p\,<\,.05)$ .     

Epitaxial growth of (11\bar 20) ZnO on (01\bar 12) Al2O3 by metalorganic chemical vapor deposition2) Al2O3 by metalorganic chemical vapor deposition

There has been increased interest in high quality ZnO films for use in a diverse range of applications such as in high frequency surface acoustic wave filters, buffer layers for GaN growth, transparent and conductive electrodes, and solid state lasers. In the present paper, ZnO films were epitaxially grown on R-plane sapphire substrates by metalorganic chemical vapor deposition at temperatures in the range 350–450°C. X-ray diffraction and electron microscopy results indicate that the ZnO films are epitaxially grown on ( $01\bar 12$ ) Al₂O₃ surface with the ( $11\bar 20$ ) plane parallel to the surface. Cross-sectional high resolution-transmission electron microscopy imaging of the as-grown film shows that the interface is semi-coherent and atomically sharp, with misfit dislocations relieving the misfit strain between ZnO and sapphire. In order to check the thermal stability of the as-grown ZnO films, annealing in an O₂+N₂ ambience at 850°C for 30 min was performed. The annealed films showed improved crystallinity. At the same time, limited reaction between ZnO and sapphire occurred, resulting in the formation of a 15–20 nm thick spinel layer at the interface.