Hot Isostatic Pressing of Si3N4 Powder Compacts and Reaction-Bonded Si3N4

Hot isostatically pressed silicon nitride was produced by densifying Si₃N₄ powder compacts and reaction-bonded Si₃N₄ (RBSN) parts with yttria as a sintering additive. The microstructure was analyzed using scanning electron microscopy, X-ray diffraction, and density measurements. The influence of the microstructure on fracture strength, creep, and oxidation behavior was investigated. It is assumed that the higher amount of oxygen in the Si₃N₄ starting powder compared with the RBSN starting material leads to an increased amount of liquid phase during densification. This results in grain growth and in a larger amount of grain boundary phase in the hot isostatically pressed material. Compared with the hot isostatically pressed RBSN samples therefore, strength decreases whereas the creep rate and the weight gain during oxidation increase.     

High-Temperature Failure Mechanisms of Hot-Pressed Si3N4 and Si3N4/Si3N4-Whisker-Reinforced Composites

The high-temperature flexural strength of hot-pressed silicon nitride (Si₃N₄) and Si₃N₄-whisker-reinforced Si₃N₄-matrix composites has been measured at a crosshead speed of 1.27 mm/min and temperatures up to 1400°C in a nitrogen atmosphere. Load–displacement curves for whisker-reinforced composites showed nonelastic fracture behavior at 1400°C. In contrast, such behavior was not observed for monolithic Si₃N₄. Microstructures of both materials have been examined by scanning and transmission electron microscopy. The results indicate that grain-boundary sliding could be responsible for strength degradation in both monolithic Si₃N₄ and its whisker composites. The origin of the nonelastic failure behavior of Si₃N₄-whisker composite at 1400°C was not positively identified but several possibilities are discussed.     

Controlled Crystallization in Self-Reinforced Silicon Nitride with Y2O3, SrO, and CaO: Crystallization Behavior

The controlled crystallization of the amorphous grain boundary phase has been examined in a series of self-reinforced Si₃N₄ materials with added Y₂O₃, SrO, and CaO. The effects of time, temperature, atmosphere, glass content, glass chemistry, and matrix Si₃N₄ on the crystallization have been investigated. The stability of the crystallized product, the crystallization kinetics ( T-T-T curve), and crystallization mechanisms have also been examined. Crystallization produced an oxynitroapatite containing Y, Sr, and Ca over a broad range of heat-treatment conditions and glass compositions. The oxynitroapatite was compatible with Si₃N₄ and remained stable up to 1600°C. At low temperatures (<1350°C), the rate-limiting crystallization mechanism was oxygen diffuson in the glass, and at higher temperatures (>1350°C) the rate-limiting crystallization step changed to either the formation of new Si₃N₄ grains or solute diffusion in the glass.     

Tribological Characteristics of Si3N4 Ceramic in High-Temperature and High-Pressure Water

The effects of sliding speed and dissolved oxygen on the tribological behavior of Si₃N₄ sliding on itself in water were investigated at room temperature and at 120°C saturated vapor pressure. The friction coefficients and specific wear rates at 120°C were much larger than those at room temperature and had a minimum at about 0.4 m/s, whereats -the specific wear rate of the disk increased with increasing the sliding speed. The wear rate at lower sliding speeds in water at 120°C is considered to be primarily controlled by the increase of the contact stress on the asperities which are formed by the dissolution of grain boundaries of the Si₃N₄ ceramic and the subsequent dissolution of the silica layer of the reaction product However, the wear rate at higher sliding speeds is governed by the direct oxidation and microfracture of the Si₃N₄ substrate. The tribochemical reaction to produce NH₃ mainly occurred at all sliding conditions in water at room temperature and 120°C, and the reaction to produce H₂ gas appeared slightly only at the sliding speeds above 0.4 m/s at 120°C. The tribological behavior was independent of dissolved oxygen concentration for all sliding conditions in water at room temperature and 120°C.     

Delayed-Failure Resistance of High-Purity Si3N4 at 1400°C

Delayed failure and creep behavior of high-purity Si₃N₄ sintered without additives with a mean grain size of 1 μm has been measured at 1400°C. Lifetime under 300 MPa was >240 h, which showed good agreement with the value predicted in our previous report. Creep strain rate ranged from 1 × 10⁻⁵ to 3 × 10⁻⁵ h⁻¹ between 200 and 360 MPa. These values demonstrate the excellent potential of high-purity Si₃N₄ materials for structural application up to 1400°C.     

Microstructural Observations on Hot-Pressed Si3N4

The development of microstructure in hot-pressed Si_aN₄ was studiehd for a typical Si₃N₄ powder with and without BeSiN₂ as a densification aid. The effect of hot-pressing temperature on density, α- to β-Si₃N₄ conversion and specific surface area showed that BeSiN₂ appears to increase the mobility of the system by enhancing densification, α- to β-Si₃N₄ transformation, and grain growth at temperatures between 1450° and 1800°. These processes appear to occur in the presence of a liquid phase.     

Mechanical Behavior of MoSi2 Reinforced–Si3N4Matrix Composites

The mechanical behavior of MoSi₂ reinforced–Si₃N₄ matrix composites was investigated as a function of MoSi₂ phase content, MoSi₂ phase size, and amount of MgO densification aid for the Si₃N₄ phase. Coarse-phase MoSi₂-Si₃N₄ composites exhibited higher room-temperature fracture toughness than fine-phase composites, reaching values >8 MP·am^1/2. Composite fracture toughness levels increased at elevated temperature. Fine-phase composites were stronger and more creep resistant than coarse phase composites. Room-temperature strengths >1000 MPa and impression creep rates of ∼10⁻⁸ s⁻¹ at 1200°C were observed. Increased MgO levels generally were deleterious to MoSi₂-Si₃N₄ mechanical properties. Internal stresses due to MoSi₂ and Si₃N₄ thermal expansion coefficient mismatch appeared to contribute to fracture toughening in MoSi₂-Si₃N₄ composites.     

Densification of Si3N4 with LiYO2 Additive

This paper deals with the densification and phase transformation during pressureless sintering of Si₃N₄ with LiYO₂ as the sintering additive. The dilatometric shrinkage data show that the first Li₂O- rich liquid forms as low as 1250°C, resulting in a significant reduction of sintering temperature. On sintering at 1500°C the bulk density increases to more than 90% of the theoretical density with only minor phase transformation from α-Si₃N₄ to β-Si₃N₄ taking place. At 1600°C the secondary phase has been completely converted into a glassy phase and total conversion of α-Si₃N₄ to β-Si₃N₄ takes place. The grain growth is anisotropic, leading to a microstructure which has potential for enhanced fracture toughness. Li₂O evaporates during sintering. Thus, the liquid phase is transient and the final material might have promising mechanical properties as well as promising high-temperature properties despite the low sintering temperature. The results show that the Li₂O−Y₂O₃ system can provide very effective low-temperature sintering additives for silicon nitride.     

Compressive Creep and Oxidation Resistance of an Si3N4 Material Fabricated in the System Si3N4-Si2N2O-Y2Si2O7

The compressive creep behavior and oxidation resistance of an Si₃N₄/Y₂Si₂O₇ material (0.85Si₃N₄+0.10SiO₂+0.05Y₂O₃) were determined at 1400°C. Creep re sistance was superior to that of other Si₃N₄ materials and was significantly in creased by a preoxidation treatment (1600°C /120 h). An apparent parabolic rate constant of 4.2 × 10⁻¹¹ kg²·m-⁴·s⁻¹ indicates excellent oxidation resistance.     

Pressureless Sintering of α-Si3N4 Porous Ceramics Using a H3PO4 Pore-Forming Agent

A new method for preparing high bending strength porous silicon nitride (Si₃N₄) ceramics with controlled porosity has been developed by using pressureless sintering techniques and phosphoric acid (H₃PO₄) as the pore-forming agent. The fabrication process is described in detail and the sintering mechanism of porous ceramics is analyzed by the X-ray diffraction method and thermal analysis. The microstructure and mechanical properties of the porous Si₃N₄ ceramics are investigated, as a function of the content of H₃PO₄. The resultant high porous Si₃N₄ ceramics sintered at 1000°–1200°C show a fine porous structure and a relative high bending strength. The porous structure is caused mainly by the volatilization of the H₃PO₄ and by the continous reaction of SiP₂O₇ binder, which could bond on to the Si₃N₄ grains. Porous Si₃N₄ ceramics with a porosity of 42%–63%, the bending strength of 50–120 MPa are obtained.     

Effect of Grain Size on the Thermal Conductivity of Si3N4

Polycrystalline Si₃N₄ samples with different grain-size distributions and a nearly constant volume content of grain-boundary phase (6.3 vol%) were fabricated by hot-pressing at 1800°C and subsequent HIP sintering at 2400°C. The HIP treatment of hot-pressed Si₃N₄ resulted in the formation of a large amount of ß-Si₃N₄ grains ∼10 µm in diameter and ∼50 µm long, and the elimination of smaller matrix grains. The room-temperature thermal conductivities of the HIPed Si₃N₄ materials were 80 and 102 Wm⁻¹K⁻¹, respectively, in the directions parallel and perpendicular to the hot-pressing axis. These values are slightly higher than those obtained for hot-pressed samples (78 and 93 Wm⁻¹K⁻¹). The calculated phonon mean free path of sintered Si₃N₄ was ∼20 nm at room temperature, which is very small as compared to the grain size. Experimental observations and theoretical calculations showed that the thermal conductivity of Si₃N₄ at room temperature is independent of grain size, but is controlled by the internal defect structure of the grains such as point defects and dislocations.     

Low-Pressure Chemical Vapor Deposition of α-Si3N4 from SiF4 and NH3: Nucleation and Growth Characteristics

The crystal structure and surface morphology of Si₃N₄ prepared by LPCVD were characterized as a function of processing conditions. Temperature was the most dominant variable which affected the coating microstructure. Strongly faceted crystalline Si₃N₄ was deposited at temperatures above ∼ 1410°C. In the temperature range of 1300° to 1410°C, crystalline and amorphous phases were codeposited. The content of the crystalline phase rapidly decreased with decreased temperature. In this temperature range, the coating crystallinity was also influenced by kinetic factors such as deposition rate and reagent depletion. For example, Si₃N₄ became more crystalline as the deposition rate was decreased by either decreasing the flow rate or increasing the NH₃/SiF₄ molar ratio. At ∼ 1300°C, the coating surface appeared fully botryoidal, and the coatings were mostly amorphous. Changes in the orientation and size of Si₃N₄ crystallites were parametrically documented. As the temperature was increased, the Si₃N₄ grains generally became more preferentially oriented to the (102) and/or ( l 0 l ) where l = 1,2,3,., directions. The average facet size increased with coating thickness.     

Role of Si2N2O in the Passive Oxidation of Chemically-Vapor-Deposited Si3N4

The results of two-step oxidation experiments on chemically-vapor-deposited Si₃N₄ and SiC at 1350°C show that a correlation exists between the presence of a Si₂N₂O interphase and the strong oxidation resistance of Si₃N₄. During normal oxidation, k _p for SiC was 15 times higher than that for Si₃N₄, and the oxide scale on Si₃N₄ was found by SEM and TEM to contain a prominent Si₂N₂O inner layer. However, when oxidized samples are annealed in Ar for 1.5 h at 1500°C and reoxidized at 1350°C as before, three things happen: the oxidation k _p increases over 55-fold for Si₃N₄, and 3.5-fold for SiC; the Si₃N₄ and SiC oxidize with nearly equal k _p's; and, most significant, the oxide scale on Si₃N₄ is found to be lacking an inner Si₂N₂O layer. The implications of this correlation for the competing models of Si₃N₄ oxidation are discussed.     

The System Si3N4-SiO2-Y2O3

Subsolidus phase relations were established in the system Si₃N₄-SiO₂-Y₂O₃. Four ternary compounds were confirmed, with compositions of Y₄Si₂O₇N₂, Y₂Si₃O₃N₄, YSiO₂N, and Y₁₀(SiO₄)₆N₂. The eutectic in the triangle Si₃N₄-Y₂Si₂O₇-Y₁₀(SiO₄)₆N₂ melts at 1500°C and that in the triangle Si₂N₂O-SiO₂-Y₂Si₂O₇ at 1550°C. The eutectic temperature of the Si₃N₄-Y₂Si₂O₇ join was ∼ 1520°C.     

Characterization of Si3N4 Coated with Chemically-Vapor-Deposited Mullite after Na2SO4-lnduced Corrosion

Si₃N₄ substrates coated with chemically-vapor-deposited, crystalline mullite (3Al₂O₃.2SiO₂) were subjected to a corrosive environment containing Na₂SO₄ and O₂ at 1000°C for 100 h. The composition and microstructure of the as-deposited and corroded specimens were examined and compared. The coating appeared to be effective in preserving and therefore protecting the surface microstructure of the underlying Si₃N₃ substrates. However, a small degree of Na penetration through mullite grain boundaries was observed to a coating depth of ∼1 μm.     

Fracture Energies of Tape-Cast Silicon Nitride with β-Si3N4 Seed Addition

The fracture energies of the tape-cast silicon nitride with and without 3 wt% rod-like β-Si₃N₄ seed addition were investigated by a chevron-notched-beam technique. The material was doped with Lu₂O₃–SiO₂ as sintering additives for giving rigid grain boundaries and good heat resistance. The seeded and tape-cast silicon nitride has anisotropic microstructure, where the fibrous grains grown from seeds were preferentially aligned parallel to the casting direction. When a stress was applied parallel to the fibrous grain alignment direction, the strength measured at 1500°C was 738 MPa, which was almost the same as room temperature strength 739 MPa. The fracture energy of the tape-cast Si₃N₄ without seed addition was 109 and 454 J/m² at room temperature and 1500°C, respectively. On the contrary, the fracture energy of the seeded and tape-cast Si₃N₄ was 301 and 781 J/m² at room temperature and 1500°C, respectively, when a stress was applied parallel to the fibrous gain alignment. The large fracture energies were attributable primarily to the unidirectional alignment fibrous Si₃N₄ grains.     

Oxidation and Strength Retention of Monolithic Si3N4 and Nanocomposite Si3N4-SiC with Yb2O3 as a Sintering Aid

The oxidation behaviors of monolithic Si₃N₄ and nanocomposite Si₃N₄-SiC with Yb₂O₃ as a sintering aid were investigated. The specimens were exposed to air at temperatures between 1200° and 1500°C for up to 200 h. Parabolic weight gains with respect to exposure time were observed for both specimens. The oxidation products formed on the surface also were similar, i.e., a mixture of crystalline Yb₂Si₂O₇ and SiO₂ (cristobalite). However, strength retention after oxidation was much higher for the nanocomposite Si₃N₄-SiC compared to the monolithic Si₃N₄. The SiC particles of the nanocomposite at the grain boundary were effective in suppressing the migration of Yb³⁺ ions from the bulk grain-boundary region to the surface during the oxidation process. As a result, depletion of yttribium ions, which led to the formation of a damaged zone beneath the oxide layer, was prevented.     

Characteristics of Si3N4-SiO2-Ce2O3 Compositions Sintered in High-pressure Nitrogen

Full-density Si₃N₄-SiO₂-Ce₂O₃ compositions were prepared by sintering with 2.5 MPa nitrogen pressure at temperatures of 1900° and 2090°C. Room-temperature flexural strengths near 700 MPa for sintered material compared favorably with the strength of hot-pressed material. At 1370°C, where flexural strengths as high as 363 MPa were obtained, it was observed that the coarsest structure was the strongest and the finest structure was the weakest. One of the compositions tested, Si₃N₄-8.7 wt% SiO₂-8.3 wt%-Ce₂O₃, was found to have excellent 200-h oxidation resistance at 700°, 1000°, and 1370°C, without incidence of 700° to 1000°C phase instability and cracking.     

Tribological Behavior of Mo5Si3-Particle-Reinforced Silicon Nitride Composites

The tribological behavior of Mo₅Si₃-particle-reinforced silicon nitride (Si₃N₄) composites was investigated by pin-on-plate wear testing under dry conditions. The friction coefficient of the Mo₅Si₃–Si₃N₄ composites and Si₃N₄ essentially decreased slowly with the sliding distance, but showed sudden increase for several times during the wear testing. The average friction coefficient of the Si₃N₄ decreased with the incorporation of submicrometer-sized Mo₅Si₃ particles and also as the content of Mo₅Si₃ particles increased. When the Mo₅Si₃–Si₃N₄ composites were oxidized at 700°C in air, solid-lubricant MoO₃ particles were generated on the surface layer. Oxidized Mo₅Si₃–Si₃N₄ composites showed self-lubricating behavior, and the average friction coefficient and wear rate of the oxidized 2.8 wt% Mo₅Si₃–Si₃N₄ composite were 0.43 and 0.72 × 10⁻⁵ mm³ (N·m)⁻¹, respectively. Both values were ∼30% lower than those for the Si₃N₄ tested in an identical manner.     

Mechanical Properties of Si3N4-SiC Three-Layer Composite Materials

The effects of microstructure and residual stress on the mechanical properties of Si₃N₄-based three-layer composite materials were investigated. The microstructure of each layer was controlled by the addition of two differently sized silicon carbides: fine SiC nanoparticles (∼200 nm) or relatively large SiC platelets (∼20 µm). When the SiC nanoparticles were added, the average grain size of Si₃N₄ was reduced because of the inhibition of grain growth by the particles. On the other hand, when the SiC platelets were added, the microstructure of Si₃N₄ was not much changed because of the large size of the platelets. Three-layer composites were fabricated by placing the Si₃N₄/SiC-nanoparticle layers on the surface of the Si₃N₄/SiC-platelet layer. The residual stress was controlled by varying the amount of SiC added. The mechanical properties of three-layer composites with various combinations of microstructure and residual stress level were investigated.