强流高电荷态全永磁ECR离子源LAPECR2的初步调试

研制成功了一台强流高电荷态全永磁ECR（Electron Cyclotron Resonance）离子源LAPECR2（Lanzhou All Permanent Magnet ECR Ion Source No．2）。该离子源在完成磁体装配后已成功在近代物理研究所320kV高压平台上安装就位,与后束运线完成对接组装。离子源于2005年7月在14．5GHz实现了第一次成功起弧,并引出较强的混合束流。目前离子源已与后束线以及部分实验终端完成了联调,在实验终端能够获得强流较高电荷态的离子束流。本文将着重论述该全永磁源的结构技术特点和主要参数指标。本文还着重论述了LAPECR2离子源在14．5GHz微波功率馈入条件下的初步调试结果,在此基础上对束流向实验终端联调的实验结果进行了讨论,着重分析了影响束流引出与传输效率的主要因素。     

CIAE强流ECR离子源研制

本文介绍了研制的一台强流ECR微波离子源,其能从7 mm直径的圆孔引出大于150 mA的氢离子束(75 keV),质子比达90%。该离子源采用独特的结构提高了离子源寿命。离子源在75 keV、110 mA束流条件下连续工作超过220 h,束流中断2次,不间断工作时间超过150 h。     

用于加速器驱动洁净核能系统的微波离子源(英文)

介绍了正在研制的用于加速器驱动洁净核能系统的微波离子源,通过离子源7.3 mm的引出孔可以引出100mA的氢离子束,质子比好于85％,离子源成功地通过了100小时可靠性试验。     

双频加热的LECR3离子源设计及初步的调试

研制成功了一台新的ECR（Electron Cyclotron Resonance）离子源LECR3（Lanzhou ECR No.3）。该离子源能为原子核物理与表面物理研究提供高电荷态离子束流，LECR3的设计主要基于IMP（Institute of Modern Physics）的14.5GHz ECR离子源（Lanzhou ECR No.2），但采用了双频加热、波导直接馈入微波功率及铝制等离子体弧腔等新技术和新方法。另外，LECR3的弧腔容积比LECR2的大，增加可注入的微波功率，可有效地增加引出的高电荷态离子束流的强度。虽然增大了弧腔的内么，但仍然保持径向六极磁铁在弧腔内壁上产生最大磁场强度与LECR2的同样大小。     

强流ECR离子源研究进展

研制了一台用于强流质子加速器的强流ECR离子源,建立了无油、大抽速的离子源实验台架,解决了微波功率馈送、放电室结构、高压打火和微波窗板损坏等问题,特别是对影响离子源寿命的窗板问题,做了独创性的改进,有效地解决了窗板容易损坏的难题,获得了很好的结果。离子源的引出能量达到70 keV,最大引出束流100mA,质子比好于80％,归一化rms发射度小于0.2π mm·mrad,离子源通过了12 h连续运行的可靠性考验。另外,设计加工了用于低能束流传输段的螺旋管透镜,设计加工了束流脉冲化装置,下一步将开展低能离子束的传输特性及脉冲化研究。     

高性能全永磁ECR离子源LAPECR2的研制

研制了一台体积和重量都较大、设计性能较高的全永磁电子回旋共振(Electron cyclotron resonance,ECR)离子源LAPECR2(Lanzhou all permanent magnetic ECRion source No.2 ).该离子源将用于中国科学院近代物理研究所320 kV高压平台,为其提供强流高电荷态离子束流.LAPECR2的研制采用全新的全永磁磁体结构设计,通过采用高性能的NdFeB永磁材料、优化的磁结构设计以及精确的计算,实测源体的磁场参数能达到高性能ECR离子源的设计要求.离子源采用较高频率的14.5 GHz微波馈入加热等离子体,波导直接馈入离子源以增强馈入微波的稳定性与效率.此外,还大量采用了一些有利于提高离子源高电荷态离子产额的关键技术,如铝内衬等离子体弧腔、负偏压盘、铝制等离子体电极、三电极引出系统、辅助掺气等.     

ECR离子源微波窗损伤机理研究

强束流下微波窗损坏是限制2.45 GHz电子回旋共振(ECR)离子源寿命的主要原因,为延长离子源使用寿命,对ECR离子源微波窗损伤机理进行了研究。利用有限元软件分别计算了Al₂O₃陶瓷微波窗在微波、等离子体和回流电子束作用下的温度及应力分布。计算结果表明,在微波和等离子体作用下,微波窗边缘处应力最大,在电子束作用下,微波窗中心位置应力最大。增强水冷效果可降低微波和等离子体对微波窗的影响,增加Al₂O₃陶瓷微波窗表面氮化硼（BN）的厚度可降低电子束的影响,从而减少微波窗损坏概率,延长离子源寿命。     

一台可产生直流束和微秒脉冲束的ECR离子源

ECR离子源与其他离子源相比具有一些优点。例如在放电室中具有较低的工作气压,能产生均匀的高密度等离子体,由于无热阴极可耐腐蚀气体,工作寿命长、发射度小、高原子离子比和束流强度大。所以,应用在中子发生器中具有良好发展前景。专门应用于中子发生器的ECR离子源既可引出直流离子束,又可引出微秒脉冲离子束。介绍了这种ECR离子源的工作原理和结构,给出了测量到的主要参数和脉冲波形。     

低能高束流氩离子源的结构及性能

离子源技术是等离子体研究中的一项重要内容,而低能大束流源则是离子源技术研究中的一个重要方向,因为这样的源在离子束刻蚀、离子束溅射镀膜以及荷能粒子与物质相互作用方面都有广泛的应用;本文采用空心阴极空心阳极结构,用热阴极电子发射弧放电驱动并用磁场约束产生等离子体,用曲面发射引出离子束,研制成了氩气放电溅射离子源;研究了灯丝加热电流、弧压对弧流的影响和弧流与工作气体压力对离子束引出的影响规律.离子源的引出电压在0-4.0 kV之间连续可调,最大引出束流为100 mA,束斑面积为φ6.0 cm,以Ti为溅射靶时的最大溅射沉积率为0.45 nm/s,离子源可连续工作160 h.     

真空弧离子源引出束流在加速空间的分布

采用数码相机直接照相的方法来确定真空弧离子源引出束流在加速空间的分布。实验在动态真空实验系统中进行,系统真空度优于2×10-3 Pa。在离子源脉冲工作的条件下,采用数码相机拍摄到离子源引出束流在加速空间的积分图像,得到引出束流的幅亮度在拍摄平面上的相对分布,然后再通过Abel转换得到引出束流在加速空间的径向分布。实验结果表明:真空弧离子源引出束流近似高斯分布,离子源出口处的束流比靶入口处的束流强40%。     

强脉冲离子注入中的脉冲能量效应研究

在脉冲离子束流密度为15120A/cm2、脉宽为50150ns、加速电压为150260kV范围内,在11014cm-2的低注量水平上, 研究了高功率Cn++H+混合离子束注入45号钢样品的强脉冲能量效应。摩擦磨损和微观硬度测量以及SEM和X射线衍射分析表明,上述低注量强脉冲离子束注入可以改变材料 表面的微观结构和力学特性,而且强烈依赖于单个脉冲离子束的功率密度和能量密度。在相同离子注量条件下,普通C++H+离子注入对45号钢样品表面微硬度和摩擦系数未 见明显影响。直接证明了强脉冲能量效应在离子注入中是相对独立于注入元素掺杂效应的又一可利用的重要效应。基于一维导热模型,讨论了强脉冲能量效应以及脉冲离 子束功率密度对离子束材料表面改性的作用。     

Modification of an Ion Source for the Production of Microampere 4He- Beams

Several modifications of the ion source of a model EN Tandem Van de Graaff Accelerator have increased the production of 4He- beams by a factor of 100 over that first obtained with the source (~10 nA). While using H2 gas for charge exchange, the replacement of the source drift tube by a screen and the installation of a system for precise adjustment of the button alignment with respect to the extractor electrode increased the output to 150 nA at the ion source. Recently potassium vapor has been used for charge exchange. Since the introduction of this technique, 4He- beam currents of 1. 2 ?A have been regularly produced. The 4He+ ions from a duoplasmatron ion source are accelerated to 20 keV and passed through the standard exchange canal which is modified by the addition of a potassium vapor chamber. Analyzed 4He++ beams of 0.3 to 0.8 ?A have been obtained with terminal voltage between 1.8 and 6 MV. The modified source has been used with K-vapor exchange for continuous periods of up to 120 hours without deterioration of source performance. Normal operation with H2 gas exchange for other beams is possible without the interruption of the source operation.     

Cross-sectional investigation of radiation damage of 2 MeV proton-irradiated silicon carbide

Cross-sectional investigation is an important method to study ion irradiation effects in the depth direction. In this study, 2 Me V H~+was implanted in 6 H-SiC single crystals to investigate the effects of light ion irradiation on SiC. Raman spectroscopy and scanning electronic microscopy(SEM) were carried out on crosssectional samples to reveal the in-depth damage states and dopant behavior. The most damaged region is a little shallower than that predicted by the SRIM procedure,owing to the uncertainty in SRIM simulations. Layered structures representing zones of varying damage after2 MeV H ion irradiation are clearly observed. Two bands are observed in SEM images, of which on band corresponds to the damage peak, while the other band at the end of the H ion-affected area is probably a result of H diffusion propelled by a hydrogen-rich layer during irradiation.A charge accumulation effect related with conductivity on the sample surfaces during SEM tests is observed in theH-implanted area. A model is proposed to explain these phenomena.     

偏滤器材料溅射过程的数值研究(英文)

为了估计一些偏滤器材料的腐蚀速率,应用一种描述溅射物理过程的新方法,基于离子输运的双群模型计算了一些偏滤器材料:钼、钨和锂在聚变带电粒子H+,D+,T+和He++的轰击下的溅射产额,并与 Monte-Carlo 方法计算得到的结果作了比较。这些结果对估计面对等离子体的部件寿命和分析聚变堆堆芯等离子体中的杂质水平估计是很有用的。     

Design and reality: Continuous-flow accelerator mass spectrometry (CFAMS)

In 2007 we published [1] the design of a novel accelerator mass spectrometry (AMS) system capable of analyzing gaseous samples injected continuously into a microwave plasma gas ion source. Obvious advantages of such a system are drastically reduced processing times and avoidance of potentially contaminating chemical preparation steps. Another paper in these proceedings will present the progress with the development of the microwave gas ion source that has since been built and tested at the National Ocean Sciences AMS Facility in Woods Hole [2]. In this paper we will review the original design and present updates, reflecting our recent encouraging experience with the system. A simple summary: large acceptance ion beam optics design is beneficial to accelerator mass spectrometry in general, but essential to AMS with plasma gas ion sources.     

He/H离子辐照损伤及其对ODS钢显微硬度的影响研究

为研究氧化物弥散强化铁素体钢(ODS钢)中的He/H离子协同辐照效应,本文开展了室温条件下ODS钢的He/H离子单一及复合辐照实验,并研究了辐照损伤对其显微硬度的影响。实验结果表明:He/H离子主要分布在损伤峰值附近;H离子辐照对ODS钢显微硬度的影响大于He离子;H离子的引入导致He离子低温解吸峰消失,而He离子的注量减半则使其热解吸起始温度升高;He、H离子与材料中缺陷相互作用不同是影响显微硬度及正电子寿命结果的主要因素。     

Measurement of Ion Parameters by Ion Sensitive Probe in ECR Plasma

Ion parameters in electron cyclotron resonance (ECR) microwave plasma were measured by ion sensitive probe and were compared with the electron parameters obtained by double Langmuir probe. The effects of gas pressure and microwave power on the ion temperature and density were analyzed. The spatial distribution of the ion parameters was also investigated by the ion sensitive probes with a tunable radial depth installed on different probe windows along the chamber axis. Results showed that the ion density measured by the ion sensitive probe was in good agreement with the electron density measured by the double Langmuir probe. The influence of gas pressure on the ion parameters was stronger than that of microwave power. With the increase in working pressure, the ion temperature decreased monotonously with a decreasing rate larger than that at higher pressure. The ion density first increased to a peak (42.3?1010cm-3) at 1 Pa and then decreased. The ion temperature and density increased little with the increase in the microwave power from 400 W to 800 W. The plasma far away from the resonant point is found to be radially uniform.     

The microwave absorption of ceramic-cup microwave ion source

An experiment system of ceramic-cup microwave ion source has been built here,Its microwave absorption efficiency as a function of the magnetic field and the pressure is presented ,When the microwave incident power is 300-500W the microwave absorption efficiencies are more than 90% if the system is optimized and the magnetic field at the microwave widows is 0.095T.     

Bended probe diagnostics of the plasma characteristics within an ECR ion source with a rectangular waveguide

To reveal the argon plasma characteristics within the entire region of an electron cyclotron resonance(ECR) ion source, the plasma parameters were diagnosed using a bended Langmuir probe with the filament axis perpendicular to the diagnosing plane. Experiments indicate that,with a gas volume flow rate and incident microwave power of 4 sccm and 8.8 W, respectively,the gas was ionized to form plasma with a luminous ring. When the incident microwave power was above 27 W, the luminous ring was converted to a bright column, the dark area near its axis was narrowed, and the microwave power absorbing efficiency was increased. This indicates that there was a mode transition phenomenon in this ECR ion source when the microwave power increased. The diagnosis shows that, at an incident microwave power of 17.4 W, the diagnosed electron temperature and ion density were below 8 eV and 3?×?10~(17) m~(-3), respectively, while at incident microwave power levels of 30 W and 40 W, the maximum electron temperature and ion density were above 11 eV and 6.8?×?10~(17) m~(-3), respectively. Confined by magnetic mirrors, the higher density plasma region had a bow shape, which coincided with the magnetic field lines but deviated from the ECR layer.     

高稳定度磁控管电源

介绍ECR型离子源的磁控管稳流电源。它使磁控管输出功率稳定,保证离子源引出稳定束流。