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1.
A new method for preparing high bending strength porous silicon nitride (Si3N4) ceramics with controlled porosity has been developed by using pressureless sintering techniques and phosphoric acid (H3PO4) as the pore-forming agent. The fabrication process is described in detail and the sintering mechanism of porous ceramics is analyzed by the X-ray diffraction method and thermal analysis. The microstructure and mechanical properties of the porous Si3N4 ceramics are investigated, as a function of the content of H3PO4. The resultant high porous Si3N4 ceramics sintered at 1000°–1200°C show a fine porous structure and a relative high bending strength. The porous structure is caused mainly by the volatilization of the H3PO4 and by the continous reaction of SiP2O7 binder, which could bond on to the Si3N4 grains. Porous Si3N4 ceramics with a porosity of 42%–63%, the bending strength of 50–120 MPa are obtained.  相似文献   

2.
The tribological behavior of Mo5Si3-particle-reinforced silicon nitride (Si3N4) composites was investigated by pin-on-plate wear testing under dry conditions. The friction coefficient of the Mo5Si3–Si3N4 composites and Si3N4 essentially decreased slowly with the sliding distance, but showed sudden increase for several times during the wear testing. The average friction coefficient of the Si3N4 decreased with the incorporation of submicrometer-sized Mo5Si3 particles and also as the content of Mo5Si3 particles increased. When the Mo5Si3–Si3N4 composites were oxidized at 700°C in air, solid-lubricant MoO3 particles were generated on the surface layer. Oxidized Mo5Si3–Si3N4 composites showed self-lubricating behavior, and the average friction coefficient and wear rate of the oxidized 2.8 wt% Mo5Si3–Si3N4 composite were 0.43 and 0.72 × 10−5 mm3 (N·m)−1, respectively. Both values were ∼30% lower than those for the Si3N4 tested in an identical manner.  相似文献   

3.
A thermo gravimetric study of the oxidation behavior of chemically vapor-deposited amorphous and crystalline Si3N4 (CVD Si3N4) was made in dry oxygen (0.1 MPa) at 1550° to 1650°C. The specimens were prepared under various deposition conditions using a mixture of SiCl4, NH3, and H2 gases. The crystalline CVD Si3N4 indicated a parabolic oxidation kinetics over the whole temperature range, whereas the amorphous CVD Si3N4 changed from a parabolic to a linear law with increased temperature. The oxidation mechanism is discussed in terms of the activation energy for the oxidation and the microstructure of the formed oxide films.  相似文献   

4.
The high-temperature flexural strength of hot-pressed silicon nitride (Si3N4) and Si3N4-whisker-reinforced Si3N4-matrix composites has been measured at a crosshead speed of 1.27 mm/min and temperatures up to 1400°C in a nitrogen atmosphere. Load–displacement curves for whisker-reinforced composites showed nonelastic fracture behavior at 1400°C. In contrast, such behavior was not observed for monolithic Si3N4. Microstructures of both materials have been examined by scanning and transmission electron microscopy. The results indicate that grain-boundary sliding could be responsible for strength degradation in both monolithic Si3N4 and its whisker composites. The origin of the nonelastic failure behavior of Si3N4-whisker composite at 1400°C was not positively identified but several possibilities are discussed.  相似文献   

5.
High-density Si3N4+6% CeO2 composites with 5 to 50% BN were fabricated by hot-pressing. BN remained as a discrete phase. Dielectric constants were 4 to 8 and loss tangents were 0.0008 to 0.06 for the room temperature to 1100°C range for compositions with 10 to 50% BN. Thermal-expansion values perpendicular to the hot-pressing direction were somewhat less than those of hot-pressed Si3N4+6% CeO2. Flexure strengths at room temperature were considerably lower than those of hot-pressed Si3N4+6% CeO2 but values at 1000°, 1250°, and 1400°C in air were only slightly lower. Young's modulus values were found to decrease with increasing BN content at all temperatures. Better thermal shock resistance was found than for commercial hot-pressed Si3N4.  相似文献   

6.
TiN-coated Si3N4 particles were prepared by depositing TiO2 on the Si3N4 surfaces from Ti(O- i -C3H7)4 solution, the TiO2 being formed by controlled hydrolysis, then subsequently nitrided with NH3 gas. A homogeneous TiO2 coating was achieved by heating a Si3N4 suspension containing 1.0 vol% H2O with the precursor at 40°C. Nitridation successfully produced Si3N4 particles coated with 10–20 nm TiN particles. Spark plasma sintering of these TiN/Si3N4 particles at 1600°C yielded composite ceramics with a relative density of 96% at 25 vol% TiN and an electrical resistivity of 10−3Ω·cm in compositions of 17.5 and 25 vol% TiN/Si3N4, making these ceramics suitable for electric discharge machining.  相似文献   

7.
The tribological behavior of monolithic Si3N4 and a Si3N4/carbon fiber composite has been assessed under high load and low speeds in an aqueous environment. The results showed that the friction coefficient of the Si3N4 was not significantly reduced when compared with dry sliding, and this was attributed to the failure to maintain a lubricating layer between the solid–solid surfaces. In the case of the composite, the initial high friction coefficient was reduced shortly after the beginning of the wear test and maintained a low value (about 0.03) throughout. This was attributed to the solid lubricating effect of the composite resulting in lower stress at the contact asperities, preventing the removal of the lubricating layer.  相似文献   

8.
The surface of Si3N4 ceramics was hydrothermally treated with HCl or H2SO4 using an autoclave. The thickness of the oxide layers formed on the Si3N4 samples decreased to one-fourth after oxidation at 1400°C by the treatment. The oxide layer of the treated samples was dense, and flaw formation in and beneath the layer did not occur at 1400°C. The avoidance of low melting Y-silicates by leaching Y2O3 is the reason for the improved oxidation resistance of the hydrothermally treated Si3N4, despite an increase in surface porosity through a 70 μm layer.  相似文献   

9.
Subsolidus phase relations were established in the system Si3N4-SiO2-Y2O3. Four ternary compounds were confirmed, with compositions of Y4Si2O7N2, Y2Si3O3N4, YSiO2N, and Y10(SiO4)6N2. The eutectic in the triangle Si3N4-Y2Si2O7-Y10(SiO4)6N2 melts at 1500°C and that in the triangle Si2N2O-SiO2-Y2Si2O7 at 1550°C. The eutectic temperature of the Si3N4-Y2Si2O7 join was ∼ 1520°C.  相似文献   

10.
The compressive creep behavior and oxidation resistance of an Si3N4/Y2Si2O7 material (0.85Si3N4+0.10SiO2+0.05Y2O3) were determined at 1400°C. Creep re sistance was superior to that of other Si3N4 materials and was significantly in creased by a preoxidation treatment (1600°C /120 h). An apparent parabolic rate constant of 4.2 × 10−11 kg2·m-4·s−1 indicates excellent oxidation resistance.  相似文献   

11.
Unlubricated pin-on-disk wear tests of Si3N4 against tool steel and gray cast iron were performed at 5 N of normal load, 0.5 m/s of sliding speed, and environmental temperature in the range 22°-600°C. The friction coefficient of Si3N4 sliding against tool steel and gray cast iron had maximum values of 0.88-0.98 for tests at 100°C. The friction coefficient of Si3N4 sliding against gray cast iron couples had minimum values of 0.48-0.57 at 400°C. Because of the increased third-body protection, the wear coefficient of the Si3N4 pins of the Si3N4/gray cast iron couples decreased by 1 order of magnitude from 1.6 10-5 mm3/(Nm) at room temperature to 1.3 10-6 mm3/(Nm) at 600°C. Fe2O3 and Fe3O4 resulting from tribooxidation of the metallic disks were the main constituents of the wear debris and adherent tribolayers. Activation energy values (6.3-13.7 kJ/mol) were comparable to those of oxidation wear of steel (7.3-11.8 kJ/mol) but were much lower than the activation energy for oxidation of iron alloys in static conditions. Calculations of the activation energy of the oxidation wear corroborate the morphological observations of a sacrificial action of the metallic surface protecting the ceramic material.  相似文献   

12.
Polycrystalline Si3N4 samples with different grain-size distributions and a nearly constant volume content of grain-boundary phase (6.3 vol%) were fabricated by hot-pressing at 1800°C and subsequent HIP sintering at 2400°C. The HIP treatment of hot-pressed Si3N4 resulted in the formation of a large amount of ß-Si3N4 grains ∼10 µm in diameter and ∼50 µm long, and the elimination of smaller matrix grains. The room-temperature thermal conductivities of the HIPed Si3N4 materials were 80 and 102 Wm−1K−1, respectively, in the directions parallel and perpendicular to the hot-pressing axis. These values are slightly higher than those obtained for hot-pressed samples (78 and 93 Wm−1K−1). The calculated phonon mean free path of sintered Si3N4 was ∼20 nm at room temperature, which is very small as compared to the grain size. Experimental observations and theoretical calculations showed that the thermal conductivity of Si3N4 at room temperature is independent of grain size, but is controlled by the internal defect structure of the grains such as point defects and dislocations.  相似文献   

13.
The effect of aluminum and yttrium nitrate additives on the densification of monolithic Si3N4 and a Si3N4/SiC composite by pressureless sintering was compared with that of oxide additives. The surfaces of Si3N4 particles milled with aluminum and yttrium nitrates, which were added as methanol solutions, were coated with a different layer containing Al and Y from that of Si3N4 particles milled with oxide additives. Monolithic Si3N4 could be sintered to 94% of theoretical density (TD) at 1500°C with nitrate additives. The sintering temperature was about 100°C lower than the case with oxide additives. After pressureless sintering at 1750°C for 2 h in N2, the bulk density of a Si3N4/20 wt% SiC composite reached 95% TD with nitrate additives.  相似文献   

14.
The results of two-step oxidation experiments on chemically-vapor-deposited Si3N4 and SiC at 1350°C show that a correlation exists between the presence of a Si2N2O interphase and the strong oxidation resistance of Si3N4. During normal oxidation, k p for SiC was 15 times higher than that for Si3N4, and the oxide scale on Si3N4 was found by SEM and TEM to contain a prominent Si2N2O inner layer. However, when oxidized samples are annealed in Ar for 1.5 h at 1500°C and reoxidized at 1350°C as before, three things happen: the oxidation k p increases over 55-fold for Si3N4, and 3.5-fold for SiC; the Si3N4 and SiC oxidize with nearly equal k p's; and, most significant, the oxide scale on Si3N4 is found to be lacking an inner Si2N2O layer. The implications of this correlation for the competing models of Si3N4 oxidation are discussed.  相似文献   

15.
Hot-pressed Si3N4 doped with 10 wt% zvttrite as a sinterine aid was studied. An equiaxed, fine-grainid microstructure was predominant, with no apparent porosity. Bend strengths were determined at room temperature and high temperatures (up to 1370°C/2500°F). Oxidation was measured by weight gain at 1370°C in air. The resulting material exhibited very good room-temperature strength (755 MPa/110 ksi). The work showed that room-temperature strength can be improved significantly by using controlled Si3N4 powder with 10 wt% zyttrite. High-temperature strength (514 MPd75 ksi) at 1370°C was nearly double that of hot-pressed Si3N4 (NC-132). The oxidation resistance at 1370°C was also higher than that of NC-132.  相似文献   

16.
The fracture energies of the tape-cast silicon nitride with and without 3 wt% rod-like β-Si3N4 seed addition were investigated by a chevron-notched-beam technique. The material was doped with Lu2O3–SiO2 as sintering additives for giving rigid grain boundaries and good heat resistance. The seeded and tape-cast silicon nitride has anisotropic microstructure, where the fibrous grains grown from seeds were preferentially aligned parallel to the casting direction. When a stress was applied parallel to the fibrous grain alignment direction, the strength measured at 1500°C was 738 MPa, which was almost the same as room temperature strength 739 MPa. The fracture energy of the tape-cast Si3N4 without seed addition was 109 and 454 J/m2 at room temperature and 1500°C, respectively. On the contrary, the fracture energy of the seeded and tape-cast Si3N4 was 301 and 781 J/m2 at room temperature and 1500°C, respectively, when a stress was applied parallel to the fibrous gain alignment. The large fracture energies were attributable primarily to the unidirectional alignment fibrous Si3N4 grains.  相似文献   

17.
The effect of Si3N4, Ta5Si3, and TaSi2 additions on the oxidation behavior of ZrB2 was characterized at 1200°–1500°C and compared with both ZrB2 and ZrB2/SiC. Significantly improved oxidation resistance of all Si-containing compositions relative to ZrB2 was a result of the formation of a protective layer of borosilicate glass during exposure to the oxidizing environment. Oxidation resistance of the Si3N4-modified ceramics increased with increasing Si3N4 content and was further improved by the addition of Cr and Ta diborides. Chromium and tantalum oxides induced phase separation in the borosilicate glass, which lead to an increase in liquidus temperature and viscosity and to a decrease in oxygen diffusivity and of boria evaporation from the glass. All tantalum silicide-containing compositions demonstrated phase separation in the borosilicate glass and higher oxidation resistance than pure ZrB2, with the effect increasing with temperature. The most oxidation-resistant ceramics contained 15 vol% Ta5Si3, 30 vol% TaSi2, 35 vol% Si3N4, or 20 vol% Si3N4 with 10 mol% CrB2. These materials exceeded the oxidation resistance of the ZrB2/SiC ceramics below 1300°–1400°C. However, the ZrB2/SiC ceramics showed slightly superior oxidation resistance at 1500°C.  相似文献   

18.
Temperature dependence of KIC values for Si3N4 bodies sintered at high pressures without additives was studied from room temperature to 1400°C. Little change in KK was found in this range.  相似文献   

19.
The crystal structure and surface morphology of Si3N4 prepared by LPCVD were characterized as a function of processing conditions. Temperature was the most dominant variable which affected the coating microstructure. Strongly faceted crystalline Si3N4 was deposited at temperatures above ∼ 1410°C. In the temperature range of 1300° to 1410°C, crystalline and amorphous phases were codeposited. The content of the crystalline phase rapidly decreased with decreased temperature. In this temperature range, the coating crystallinity was also influenced by kinetic factors such as deposition rate and reagent depletion. For example, Si3N4 became more crystalline as the deposition rate was decreased by either decreasing the flow rate or increasing the NH3/SiF4 molar ratio. At ∼ 1300°C, the coating surface appeared fully botryoidal, and the coatings were mostly amorphous. Changes in the orientation and size of Si3N4 crystallites were parametrically documented. As the temperature was increased, the Si3N4 grains generally became more preferentially oriented to the (102) and/or ( l 0 l ) where l = 1,2,3,., directions. The average facet size increased with coating thickness.  相似文献   

20.
Mineral oil lubricated rolling and sliding wear of SiC whisker (SiCw) reinforced Si3N4 composite and monolithic Si3N4 prepared identically against M2 tool steel were investigated using a cylinder-on-cylinder apparatus. Wear of this Si3N4 was higher than that of the composite. Wear of the steel against Si3N4 was also higher than that against the composite. Relatively larger scale microfracture occurred in the Si3N4 than in the composite; more pullout and microchipping of carbide particles were observed in the steel against Si3N4 than against the composite. Polishing of the worn surfaces of the steel occurred in both sliding and rolling tests. This was attributed to fine, hard wear debris circulating in the contact area. Spalling was observed in the steel sliding against Si3N4 but not in the steel sliding against the composite.  相似文献   

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