Structural and electrical properties of swift heavy ion beam irradiated Fe/Si interface

The present work deals with the mixing of iron and silicon by swift heavy ions in high-energy range. The thin film was deposited on a n-Si (111) substrate at 10⁻⁶ torr and at room temperature. Irradiations were undertaken at room temperature using 120 MeV Au⁺⁹ ions at the Fe/Si interface to investigate ion beam mixing at various doses: 5 × 10¹² and 5 × 10¹³ ions/cm². Formation of different phases of iron silicide has been investigated by X-ray diffraction (XRD) technique, which shows enhancement of intermixing and silicide formation as a result of irradiation. I-V measurements for both pristine and irradiated samples have been carried out at room temperature, series resistance and barrier heights for both as deposited and irradiated samples were extracted. The barrier height was found to vary from 0·73–0·54 eV. The series resistance varied from 102·04–38·61 kΩ.     

Optical properties of swift ion beam irradiated CdTe thin films

This paper reports the effect of swift (80 MeV) oxygen (O⁺⁶) ion irradiation on the optical properties of CdTe thin films grown by conventional thermal evaporation on glass substrates. The films are found to be slightly Te-rich in composition and irradiation results no change in the elemental composition. The optical constants such as refractive index (n), absorption coefficient (α) and the optical band gap energy show significant variation in their values with increase in ion fluence. Upon irradiation the band gap energy decreased from a value of 1.53 eV to 1.46 eV whereas the refractive index (n) increased from 2.38 to 3.12 at λ = 850 nm. The photoluminescence spectrum shows high density of native defects whose density strongly depends on the ion fluence. Both analyses indicate considerable defect production after swift ion beam irradiation.     

Mixing induced by swift heavy ion irradiation at Fe/Si interface

The present work deals with the mixing of metal and silicon by swift heavy ions in high-energy range. Threshold value for the defect creation in metal Fe calculated was found to be ∼ 40 keV/nm. A thin film of Fe (10 nm) was deposited on Si (100) at a pressure of 4 × 10⁻⁸ Torr and was irradiated with 95 MeV Au ions. Irradiation was done at RT, to a dose of 10¹³ ions/cm² and 1 pna current. The electronic energy loss was found to be 29.23 keV/nm for 95 MeV Au ions in Fe using TRIM calculation. Compositional analysis of samples was done by Rutherford backscattering spectroscopy. Reflectivity studies were carried out on the pre-annealed and post-annealed samples to study irradiation effects. Grazing incidence X-ray diffraction was done to study the interface. It was observed that ion beam mixing reactions at RT lead to mixing as a result of high electronic excitations.     

Structural and electrical properties of swift heavy ion beam irradiated Co/Si interface

Synthesis of swift heavy ion induced metal silicide is a new advancement in materials science research. We have investigated the mixing at Co/Si interface by swift heavy ion beam induced irradiation in the electronic stopping power regime. Irradiations were undertaken at room temperature using 120 MeV Au ions at the Co/Si interface for investigation of ion beam mixing at various doses: 8 × 10¹², 5 × 10¹³ and 1 × 10¹⁴ cm⁻². Formation of different phases of cobalt silicide is identified by the grazing incidence X-ray diffraction (GIXRD) technique, which shows enhancement of intermixing and silicide formation as a result of irradiation.I–V characteristics at Co/Si interface were undertaken to understand the irradiation effect on conduction mechanism at the interface.     

Studies on the optical band gap and cluster size of the polyaniline thin films irradiated with swift heavy Si ions

Polyaniline thin films prepared by RF plasma polymerisation were irradiated with 92 MeV Si ions for various fluences of 1×10¹¹, 1×10¹² and 1×10¹³ ions/cm². FTIR and UV-vis-NIR measurements were carried out on the pristine and Si ion irradiated polyaniline thin films for structural evaluation and optical band gap determination. The effect of swift heavy ions on the structural and optical properties of plasma-polymerised aniline thin film is investigated. Their properties are compared with that of the pristine sample. The FTIR spectrum indicates that the structure of the irradiated sample is altered. The optical studies show that the band gap of irradiated thin film has been considerably modified. This has been attributed to the rearrangement in the ring structure and the formation of CC terminals. This results in extended conjugated structure causing reduction in optical band gap.     

1/f Noise properties of swift heavy ion irradiated epitaxial thin films of YBCO

Effect of 250 MeV¹⁰⁷Ag ion irradiation induced columnar defects on the noise properties of the YBCO superconductor in the normal and superconducting state have been investigated. Magnitude of the spectral density of the noise is found to scale inversely with the frequency and exhibit a quadratic dependence on the bias current confirming that the noise arises due to the resistance fluctuations. The magnitude ofS _v has been found to decrease with decrease in temperature and shows a noise peak in the transition region. The noise performance of these materials in the vicinity of the superconducting transition as well as in the normal state is found to improve by an order of magnitude after irradiation with 250 MeV¹⁰⁷Ag ions. The decrease in the magnitude of 1/f noise peak is due the irradiation induced enhanced flux pinning of the material which suppresses the flux motion induced noise in the vicinity ofT _c.     

Yttrium sesquioxide, Y2O3, thin films deposited on Si by ion beam sputtering: microstructure and dielectric properties

Y₂O₃ thin films were in-situ deposited by ion beam sputtering on Si substrate. The influence of the deposition parameters are studied by X-ray diffraction, electrical measurements and high resolution transmission electron microscopy observations. The stress sate of the oxide layers is investigated by the sin²ψ method as a function of the deposition parameters and the post-annealing treatments. Oxygen ion beam assisted deposition process or post-annealing of as-deposited thin films lead to the same relaxation of the internal compressive stress within the oxide layer. An SiO₂ layer sandwiched between Si and Y₂O₃ is always observed and should play a role both in the growing process and electrical properties of the MOS structure based on Y₂O₃ oxide layer. The results are interpreted in terms of diffusional process in the oxide, which are directly related to the temperature and the oxygen partial pressure during the growth process.     

Fe3Si薄膜的制备和性能研究

介绍了Fe3Si的一些基本特性及Fe3Si薄膜的几种主要制备方法,重点介绍了分子束外延法中不同类型衬底、温度对Fe3Si薄膜形成的影响,并且分析了各种制备方法中的一些重要参数对薄膜结构及性质的影响。随着Fe3Si薄膜制备工艺的不断完善,Fe3Si薄膜将会成为一种性能优秀的自旋电子器件。     

MEVVA离子源制备Fe/Si系薄膜的颗粒污染问题

研究了MEVVA离子注入机在Fe／Si系薄膜制备过程中产生的颗粒污染问题以及颗粒污染对薄膜质量带来的影响。选取不同制备条件下的Fe／Si薄膜，采用电子探针、透射电镜等分析手段对颗粒污染给Fe／Si薄膜所造成的影响进行了详细的分析和讨论。分析结果表明，MEVVA源离子注入机产生的颗粒污染主要包括Fe、Al、C、O等几种元素，这其中Fe和Al元素的污染较为严重。不同注入时期引入的颗粒对Fe／Si系薄膜的质量会产生不同程度的影响，针对不同的影响可以找到一些解决方法来克服薄膜质量下降的问题。     

Interface structure at the large misfit, still common epitaxy β-FeSi2(101) or (110)//Si(111)

In this paper we compare the elastic energies obtained by tight-binding molecular dynamics simulations for several strained structures of β-FeSi₂, corresponding to the most frequent epitaxial relationships ‘on’ and ‘in’ silicon. Our results confirm that, for coherent interfaces, the very common β-FeSi₂(101) or (110)//Si(111) orientation generates a very large contribution to the elastic energy, due to the large misfit. Therefore, we suggest that the frequent nucleation of such epitaxial relationships in precipitates is provided by the correspondence of the two-dimensional crystal structure for the Si sites between Si(111) and β-FeSi₂(101) or (110). We show it to be maintained even after misfit relaxation in the silicon matrix, as simulated by a large-scale molecular dynamics run.     

Auger electron spectroscopy analysis of interface roughness of Fe/Cr bilayers

In this work we investigate the surface and interfacial properties of Fe/Cr and Cr/Fe bilayers before and after annealing using Auger electron spectroscopy (AES). The roughness of the interface is also determined with the X-ray reflection method. The fitted values of inelastic mean free path λ_{Cr in Fe} reproduce the calculated value for Cr in Fe well, whereas the values of λ_{Fe in Cr} are significantly larger than the calculated ones, suggesting mutual segregation of atoms during growth. The low-energy range Auger spectra demonstrated that the MNN lines of Cr covered with Fe and Fe covered with Cr disappear after the deposition of 1 nm overlayer, this being an indication of continuous deposited film, but not excluding mixing at interfaces. The results of X-ray reflectometry measurements, which give the values of Fe/Cr and Cr/Fe roughness, are in accordance with this observation. The LMM Auger spectra of annealed samples showed that at the largest applied temperature, Cr diffuses into Fe, but the reverse effect of Fe diffusion into Cr is not observed.     

Mechanical spectroscopy of thin layers of PPV polymer on Si substrates

The vibrating reed technique with electro“static” excitation and optical detection has been applied to investigate thin layers of poly-phenylene-vinylene, deposited by spin coating onto microfabricated Si cantilevers, during temperature cycling programs between 90 and 540 K at a rate of 1 K/min. From the vibration frequencies the Young’s modulus of the film can be estimated to be about 10 MPa at room temperature in the precursor phase (if prepared from a solution in toluene), which increases by conversion to the conjugate bonded polymer to about 50 MPa. The temperature dependence of internal friction reveals the processes of γ relaxations (crankshaft motion of side branches in the precursor) and β-relaxation (movements of a few monomer blocks in the polymer chain), as well as peaks indicating the structural transformations during conversion, and possibly a glass transition in the amorphous precursor phase. After conversion only the β-relaxation persists.     

新型工艺制备Fe/Cr/Si复合薄膜的结构研究

采用改进的水热法和新型工艺在SUS304不锈钢表面制备了Fe/Cr掺杂SiO2薄膜,并通过扫描电镜(SEM)、X射线衍射(XRD)、电子探针(EPMA)和X射线光电子能谱深度分析(XPS)等检测手段对薄膜结构进行了分析.结果表明膜层主要分为两层:表层为共溶氧化物层;底层为Cr、Fe的氧化物,主要为尖晶石结构和Si网状结构.通过XPS检测结果得知,Si元素的加入不是简单的物理混合,而是与金属元素生成了Si-Fe键,进一步提高了膜层的结合力和耐酸性.     

Enhancement in CO gas sensing properties of hydroxyapatite thick films: Effect of swift heavy ion irradiation

This paper investigates the effect of swift heavy ion (SHI) irradiation on surface morphology of Hydroxyapatite (HAp) thick films and modification in gas sensing characteristics. The HAp nanopowder is synthesized by wet chemical process and the thick films are prepared by screen printing technique. These films are irradiated with Ag⁷⁺ ions with energy of 100 MeV at different fluences ranging from 3 × 10¹⁰ to 3 × 10¹³ ions/cm². X-ray diffraction and atomic force microscopy tools are employed to examine the phase and surface modification in HAp thick films due to swift heavy ion irradiation. The ion irradiation study shows that crystallinity decreases and grain size changes with increase in ion fluence. A precise study on gas sensing is carried out to confirm operating temperature of HAp thick film sensor to detect CO gas. Saturation region of the film with increasing gas concentration and other parameters such as response and recovery time are also investigated from the point of view of using HAp films as a sensor device. SHI irradiated HAp thick film shows enhancement in the gas response and saturation limit for CO gas. Furthermore, the irradiated HAp film shows fast response and recovery time for CO gas. The study concludes that nanoceramic HAp thick film is an excellent CO gas sensor at an operating temperature of 195 °C.     

离子束溅射制备Si／Ge多层膜研究

采用离子束溅射方法在Si衬底上制备Si／Ge多层膜，通过改变生长温度、溅射速率等因素得到一系列Si／Ge多层膜样品；通过X射线衍射、Raman散射等表征方法研究薄膜结构与生长条件的关系。在小束流（10mA）、室温条件下制备出界面清晰、周期完整的Si／Ge多层膜。     

SnO2/Fe2O3双层薄膜的界面结构及其对气敏特性的影响

本文给出用等离子化学气相沉积 (PCVD)技术制备的SnO2 /Fe2 O3 双层薄膜结构的俄歇谱 (AES)剖面分析、透射电镜 (TEM)断面形貌和扫描电镜 (SEM)表面形貌的实验研究结果。AES剖面分析和TEM断面形貌图显示在SnO2 与Fe2 O3 界面区有一个约 35nm厚的过渡层存在 ,其质地松散。实验还发现这个界面过渡层的存在缓解了层间应力 ,增强了SnO2 薄膜的附着力 ,对该双层膜的气敏特性有明显的控制作用 ;但当SnO2 层厚大于 2 70nm时 ,其控制作用几乎完全消失     

Cr/Al复合合金化Fe_3Si基有序合金及其有序度研究

基于合金化的改性原理,以调整材料的长程有序度为改性思想,采用真空电弧熔炼/热压退火制备了四种Cr/Al复合合金化Fe3Si基有序合金。通过XRD,SEM,EPMA等对合金进行了表征,并采用长程有序参数定量表征了退火得到的有序相的有序程度。结果表明:四种不同成分的有序合金,具有不同的显微组织。随着Si含量降低合金有序度下降,且Cr/Al的复合效应对这一趋势起到了促进作用,使得具有相同Si含量的Fe65Si25Cr5Al5有序合金的有序度低于Fe3Si,分别为0.658和0.796。     

壳聚糖-羟基磷灰石/Fe3O4磁性纳米载体的制备及性能?

采用酸碱共滴定法,以超顺磁性的纳米Fe3 O4为形核剂,成功制备 HAP/Fe3 O4、CS-HAP/Fe3 O4磁性纳米载体。利用透射电镜(TEM)、X 射线衍射仪(XRD)、傅里叶红外光谱分析仪(FT-IR)、振动样品磁强计(VSM)和 MTT 法对样品的显微结构、物相、磁性能和生物学性能进行了表征和分析。结果表明,所制备载体表现为超顺磁性,尺寸约为100 nm,均为20 nm左右的羟基磷灰石颗粒包裹20 nm 左右的Fe3 O4颗粒而成。其中双相载体中的 HAP 颗粒呈球形,三相载体中的 H AP颗粒呈短棒状。双相载体为1级细胞毒性反应,三相载体为0级毒性反应,具有促细胞增殖作用。     

Fe/Fe_(3)C/Fe_(3)O_(4)@C磁性微球的制备及吸波性能研究EI北大核心CSCD

薄、轻、宽、强是人们对高效电磁波吸收材料的追求。用食品级柠檬酸铁与蔗糖经过水热反应,高温煅烧制备Fe/Fe_(3)C/Fe_(3)O_(4)@C磁性微球,并通过改变柠檬酸铁与蔗糖的摩尔比,探究柠檬酸铁的含量对复合材料吸波性能的影响,有效地调控电磁参数,从而优化阻抗匹配。实验结果表明,当柠檬酸铁与蔗糖的摩尔比为5∶3时,具有较好的吸波性能:当厚度为2.5 mm时,最小反射损耗为-50.17 dB,小于-10 dB的有效吸收频宽为3.52 GHz,优异的电磁波吸收性能主要得益于微球丰富的界面、孔状结构和Fe/Fe_(3)C/Fe_(3)O_(4)磁学性能的协同作用。     

Structures and light emission properties of nanocrystalline FeSi2/Si formed by ion beam synthesis with a metal vapor vacuum arc ion source

Thin layers of nanocrystalline FeSi₂ embedded in Si structures have been formed by Fe implantation using a metal vapor vacuum arc (MEVVA) ion source under various implantation and thermal annealing conditions. The microstructures were studied in details and correlated with the photoluminescence (PL) properties. It is found that higher lattice coherence between the FeSi₂ nanocrystals and the Si matrix is associated with better light emission efficiency. Multiple-cycle implantation schemes were introduced and it is shown that with appropriate process design the dose quenching effect can be suppressed to achieve light emission enhancement in higher dose samples. De-convolution of the PL spectra into two or three peaks was performed and their temperature and excitation power dependence were analyzed. The analysis results indicate that the 1.55-μm emission really originated from FeSi₂ and that the emission peaks are likely donor- or accepted-level-related. MOS structures with the incorporation of implanted nanocrystalline FeSi₂ were fabricated. Electroluminescence (EL) spectra from these devices showed two peak features of which one peak corresponds to FeSi₂ emission and the other corresponds to enhanced Si band-edge emission. Clear room-temperature EL signals from these device structures were observed. A model is proposed to qualitatively understand the temperature dependence of the EL spectra.