高性能螺线管微电感的制作

利用MEMS技术制作了高性能的空芯螺线管型射频微机械电感.这种微电感采用铜线圈以减小线圈寄生电阻,整个微电感的面积是880μm×350μm,与平面螺旋型微电感相比,有效地节省了芯片面积.测试结果表明,微电感在较宽的工作频率范围内具有高Q值,微电感最大Q值为38(@6GHz),对应的电感量为1.82nH.     

高性能螺线管微电感的制作

利用MEMS技术制作了高性能的空芯螺线管型射频微机械电感.这种微电感采用铜线圈以减小线圈寄生电阻,整个微电感的面积是880μm×350μm,与平面螺旋型微电感相比,有效地节省了芯片面积.测试结果表明,微电感在较宽的工作频率范围内具有高Q值,微电感最大Q值为38(@6GHz),对应的电感量为1.82nH.     

悬空结构射频微电感的制作研究

利用MEMS工艺中的牺牲层技术制作了一种新型悬空结构微电感，在此悬空结构中，微电感的线圈制作在与衬底平行的平面上，线圈与衬底之间有立柱支撑；此新型微电感的高频性能较好，且其制作工艺流程简单，与集成电路工艺相兼容。测量结果表明：当工作频率在2GHz～3GHz范围内时，此悬空结构微电感电感量达到4．2nH，Q值最大可达到37。     

新型悬空结构射频微电感的制作与测试

利用MEMS(Micro Electro-Mechanical System:微机电系统)工艺中的牺牲层技术制作了一种新型悬空结构微电感,在此悬空结构中,微电感的线圈制作在与衬底平行的平面上,线圈与衬底之间有立柱支撑;此新型微电感的制作工艺流程简单,与集成电路工艺相兼容,且其高频性能较好。并对此结构微电感的性能进行了测试,测试频率范围在0.05~10 GHz之间,结果表明:当悬空结构微电感的悬空高度为20 靘,工作频率在3~5 GHz范围内时,其电感量达到4 nH,其Q值最大可达到22。     

采用MEMS技术制作的螺线管电感

采用微机电系统技术制作了螺线管电感.为了获得高电感量和Q值,采用UV-LIGA、干法刻蚀、抛光和电镀技术,研制的电感大小为1500μm×900μm×70μm,线圈匝数为41匝,宽度为20μm,线圈之间的间隙为20μm,高深宽比为3.5:1.测试结果表明电感量最大值为6.17nH,Q值约为6.     

硅基CoZrO铁氧体磁膜结构RF集成微电感

制作了一种新型磁膜结构射频集成微电感.该电感使用溶胶-凝胶法制备的CoZrO铁氧体作为磁性薄膜;采用平面单匝形式的金属线圈,从而形成"SiO2绝缘层/磁膜层(CoZrO)/SiO2绝缘层/Cu线圈"的结构,具有结构简单、制作工艺与常规集成工艺兼容等特点.同时,采用相同工艺同批制作了无磁膜微电感作为对比样品,并取各项结构参数与磁膜电感相一致.测试结果表明,2GHz处,磁膜结构微电感的感值(L)为1.75nH、品质因数(Q)为18.5,与无磁膜微电感相比,L和Q的值分别提高了25%和23%.     

硅基COZrO铁氧体磁膜结构RF集成微电感

制作了一种新型磁膜结构射频集成微电感.该电感使用溶胶-凝胶法制备的CoZrO铁氧体作为磁性薄膜;采用平面单匝形式的金属线圈,从而形成"SiO2绝缘层/磁膜层(CoZrO)/SiO2绝缘层/Cu线圈"的结构,具有结构简单、制作工艺与常规集成工艺兼容等特点.同时,采用相同工艺同批制作了无磁膜微电感作为对比样品,并取各项结构参数与磁膜电感相一致.测试结果表明,2GHz处,磁膜结构微电感的感值(L)为1.75nH、品质因数(Q)为18.5,与无磁膜微电感相比,L和Q的值分别提高了25%和23%.     

双层悬空结构片状微电感研究

利用MEMS工艺制作了一种双层悬空结构的圆形片状微电感，并研究了其在S波段的性能。双层微电感的底层线圈制作在玻璃衬底平面上，外径为500μm，匝数为2，导线宽度70μm，导线间距15μm，顶层线圈的悬空高度为20μm，顶层线圈的匝数为1．5，其它结构参数与底层线圈相同。研究表明，所制作的双层结构微电感在2GHz～4GHz时其电感量达到2．2nH，其品质因数达到22。在制作过程中首次引入的光刻胶抛光工艺大大简化了微电感的制作过程。     

用于5～6GHz无线局域网的硅螺旋电感设计

提出一种设计和优化电感版图结构的方法.采用低电阻系数硅衬底和0.18μm Cu/SiO2互连工艺技术,设计出一组工作在5.7GHz的电感,同时优化了版图结构,例如内部磁芯大小、线圈宽度、线圈间距(0.2～11nH)等.与使用原有设计方法测出的电感的Q值相比,经过优化的5.7GHz电感的Q值可改进到5～8.     

用于5～6GHz无线局域网的硅螺旋电感设计

提出一种设计和优化电感版图结构的方法.采用低电阻系数硅衬底和0.18μm Cu/SiO2互连工艺技术,设计出一组工作在5.7GHz的电感,同时优化了版图结构,例如内部磁芯大小、线圈宽度、线圈间距(0.2～11nH)等.与使用原有设计方法测出的电感的Q值相比,经过优化的5.7GHz电感的Q值可改进到5～8.     

Surface micromachined solenoid on-Si and on-glass inductors for RFapplications

RF performance of surface micromachined solenoid on-chip inductors fabricated on a standard silicon substrate (10 Ω·cm) has been investigated and the results are compared with the same inductors on glass. The solenoid inductor on Si with a 15-μm thick insulating layer achieves peak quality (Q-) factor of 16.7 at 2.4 GHz with inductance of 2.67 nH. This peak Q-factor is about two-thirds of that of the same inductor fabricated on glass. The highest performance has been obtained from the narrowest-pitched on-glass inductor, which shows inductance of 2.3 nH, peak Q-factor of 25.1 at 8.4 GHz, and spatial inductance density of 30 nH/mm². Both on-Si and on-glass inductors have been modeled by lumped circuits, and the geometrical dependence of the inductance and Q-factor have been investigated as well     

On-chip solenoid inductors with high quality factor for high frequency magnetic integrated circuits

On-chip solenoid inductors for high frequency magnetic integrated circuits are proposed. The eddy current loss was reduced by dividing the inductor into three consecutive inductors connected in series. The inductor has an inductance of 1.1nH and the maximum quality factor (Q/sub max/) of 50.5. The self-resonant frequency and the operating frequency at Q/sub max/ are greater than 17.5GHz and 16.7GHz, respectively.     

High-performance large-inductance embedded inductors in thin array plastic packaging (TAPP) for RF system-in-package applications

We report the first demonstration of high-Q embedded inductors fabricated using a thin-array-plastic-packaging (TAPP) technology. The TAPP technology provides a platform that integrates digital, analog, RF integrated circuits, along with high-performance passive components for system-in-package implementation. Embedded inductors ranging from 14 to 300 nH were fabricated. All the inductors with inductance less than 100 nH exhibit self-resonant frequency above 1 GHz. For a 14-nH inductor, Q factor of 35 was achieved at 1.6 GHz and the self-resonance frequency was measured at 6.15 GHz.     

新颖的常规硅工艺实现的侧向螺线型片上集成电感

提出了一种用常规硅工艺实现的片上集成电感的螺线型新结构．制造工艺使用标准双层金属布线的常规硅工艺．测量了螺线型集成电感的S参数，从测量数据计算了集成电感的参量．实验的侧向螺线型片上集成电感的Q值峰值为1.3，电感量为22nH．对用两层金属层实现的侧向螺线型片上集成电感和单层金属的常规平面螺旋电感的实验结果进行了比较，电感量和Q值与常规平面螺旋电感有可比性．     

Micromachined bridge-shaped spiral inductor on anodised aluminium substrate

Noble micromachined integrated spiral inductors on anodised aluminium substrate are presented. The RF characteristics of the fabricated inductors have been measured. A high peak Q-factor of 82.36 at 4.2 GHz has been achieved with inductance of 2.59 nH (at 2 GHz) and a self-resonant frequency of around 10 GHz. This work demonstrates that an integrated passive device on anodised aluminium substrate has a competitive RF performance compared to that of LTCC technology.     

CMOS-compatible surface-micromachined suspended-spiral inductors for multi-GHz silicon RF ICs

Fully CMOS-compatible, highly suspended spiral inductors have been designed and fabricated on standard silicon substrates (1/spl sim/30 /spl Omega//spl middot/cm in resistivity) by surface micromachining technology (no substrate etch involved). The RF characteristics of the fabricated inductors have been measured and their equivalent circuit parameters have been extracted using a conventional lumped-element model. We have achieved a high peak Q-factor of 70 at 6 GHz with inductance of 1.38 nH (at 1 GHz) and a self-resonant frequency of over 20 GHz. To the best of our knowledge, this is the highest Q-factor ever reported on standard silicon substrates. This work has demonstrated that the proposed microelectromechanical systems (MEMS) inductors can be a viable technology option to meet the today's strong demands on high-Q on-chip inductors for multi-GHz silicon RF ICs.     

On-chip embedded toroidal solenoid inductors and transformers formed by post-CMOS micromachining techniques

This paper presents a micromachined implementation of embedded toroidal solenoids for high-performance on-chip inductors and transformers, which is highly demanded in radio-frequency integrated circuits (RFICs). Microfabricated on CMOS compatible silicon wafers with post-CMOS micromachining techniques, the RF toroidal components can constrain the magnetic flux into a well-defined path and away from other on-chip RF devices, thereby, being in favor of decrease in RF loss, increase in Q-factor and elimination of electromagnetic interference. By using a technical combination of an anisotropic wet etch and an isotropic dry etc., the micromachined toroidal structure can be used for the formation of metal solenoid by copper electroplating. Processed under low temperature (Max 120 °C for photoresist hard-baking), the three mask microfabrication can be compatible with CMOS IC fabrication in a post-process way. The formed toroidal inductors with 4.92 nH and 8.48 nH inductance are tested, and we obtain maximum Q-factors of 25.7 and 17.8 at 3.6 GHz and 3.1 GHz, while the self-resonant frequencies are 17.3 GHz and 7.4 GHz, respectively. On the other hand, two types of toroidal transformers are also formed and tested, resulting in satisfactory RF-performance. Therefore, the novel techniques for close-loop solenoid inductors are promising for high-performance RF ICs.     

An approach for fabricating high-performance inductors onlow-resistivity substrates

Porous Si layers up to 250 μm in thickness are used to isolate spiral inductors from low resistivity substrates. Wafer curvature and secondary ion mass spectroscopy (SIMS) analysis are done to address the manufacturability issue of porous Si. Spiral inductors with a single level Al on 2 in, p-type substrates of 0.008 Ω-cm resistivity are demonstrated with Q<6 at 3 GHz for an L of ~8 nH. Large inductors with L~100 nH have been shown with the first resonance frequency at 1 GHz. The expected performance potential as well as factors that could be limiting the Q are discussed     

MMIC用多层磁膜电感研究

采用磁控溅射生长磁膜工艺,结合BCB(苯并环丁烯)平坦化技术,首次制作了"金属线圈/磁膜/金属线圈(M/F/M)"和"磁膜/金属线圈/磁膜/金属线圈(F/M/F/M)"两种结构的多层磁膜电感,整个工艺与标准MMIC工艺兼容.在2 GHz处,"金属线圈/磁膜/金属线圈"结构电感的电感量为7.5 nH,品质因数为7.17,...     

Chip-to-Board Micromachining for Interconnect Layer Passive Components

Integrated inductors are typically formed either on a chip or embedded in a package or board. In this work, we explore the possibility of forming inductors in the chip-to-board interconnect layer. The solderless technique of copper (Cu) electroplating bonding is used to simultaneously form inductor structures as well as chip-to-board interconnect. The use of the gap between the chip and substrate for inductors not only increases integration density, but also allows large magnetic cross-sectional areas to be achieved. To demonstrate the technology, a plating-through-mold method has been used in the establishment of tall interconnect or solenoid inductors. For demonstration of the electroplating bonded micro solenoid structures, three- and seven-turn (500mum in height) inductors have been realized with measured inductances of 3.6 and 10.4nH, and Q-factors of 71 and 55, respectively. As an alternative approach, a polymer-core-conductor method in which polymer posts coated with metal are electroplating bonded, has been developed. This approach reduces processing time in the fabrication of the tall metal structures. For the polymer core RF structures, three-, five-, seven-, and 10-turn inductors have been fabricated. These inductors have inductances of 4.2, 7.0, 9.6, and 13.6nH, and Q-factors of 72, 64, 56, and 61, respectively