基于EMI结构损伤检测技术的模拟与分析

该文基于压电阻抗法(EMI)对带有损伤板类结构进行模拟分析,研究了损伤拓展对EMI信号的影响规律。首先,采用有限元软件ANSYS建立6种不同损伤情况下的三维精细"压电片(PZT)-主体结构"有限元模型;然后,对有限元模型进行动力谐响应分析,得到考虑损伤深度d、损伤位置与压电片距离s的压电片电导频谱信号;最后,通过横纵向对比分析了板类结构损伤扩展对压电片电导频谱信号的影响规律。分析结果表明,采用建立的含有细小损伤的三维精确压电有限元模型,可以精确地检测到压电片电导纳谱中的共振模态,进而可以很好地识别板类结构局部的细小损伤;验证了现有电阻抗法对含有细小损伤结构分析理论的有效性;当损伤位置越靠近压电片,电导频谱信号模态峰值向左偏移的就越多,因此,通过布置压电片的合理位置可以确定结构细小损伤的位置。     

一种低频大行程直线型压电电机的研究

基于叠层式压电陶瓷在低频带范围内的变形幅值大,与驱动电压线性度好且基本不随驱动频率变化的特点,提出并研制了一种低频大行程直线型压电电机.与共振式压电电机相比,该电机在低频范围内输出速度与驱动频率的线性度好,可控性较好.对电机的工作机理进行了分析,同时利用有限元软件对电机的结构进行设计,并试制了原理样机.实验结果表明,电机可在100 Hz～2 kHz的频带工作,其速度在100 Hz～1 kHz的频带内基本和频率成正比,最大空载速度为60 mm/min.     

基于压电阻抗技术原理的压电传感、驱动元件自损伤检测方法

从对压电阻抗技术的介绍谈起,然后就压电自损伤检测理论进行分析,最后对基于压电阻抗技术原理的压电传感、驱动元件自损伤检测方法的试验应用进行说明。     

基于压电阻抗的混凝土裂缝深度发展定量研究

混凝土结构是土木工程领域使用最广的结构形式,裂缝是其损伤的主要形式。该文基于压电阻抗(EMI)监测技术,对混凝土立方体标准试块裂缝深度的定量发展进行了监测。制作150mm×150mm×150mm标准试块,将压电片(PZT)粘贴于试块表面,用精密阻抗分析仪HP4294A提取压电片在混凝土试块健康状况和不同损伤工况下的电导纳信号,并分析二者的联系。实验结果表明,随着裂缝损伤的发展,压电片电导纳频谱发生了变化;压电片-粘结层-主体结构耦合系统的共振频率及电导信号峰值能表征混凝土裂缝深度的发展,但其存在稳定性缺陷;传统损伤指标中,绝对比例平均偏差(MAPD)和均方根偏差(RMSD)比相关系数(CCD)更适于监测混凝土裂缝的出现,而CCD则比MAPD和RMSD更适于定量分析裂缝的发展。此外,该文还得到了混凝土试块裂缝发展时损伤参数的具体数值,可供EMI健康监测实际应用时参考。     

基于压电阻抗的混凝土裂缝深度发展定量研究

混凝土结构是土木工程领域使用最广的结构形式,裂缝是其损伤的主要形式。该文基于压电阻抗(EMI)监测技术,对混凝土立方体标准试块裂缝深度的定量发展进行了监测。制作150mm×150mm×150mm标准试块,将压电片(PZT)粘贴于试块表面,用精密阻抗分析仪HP4294A提取压电片在混凝土试块健康状况和不同损伤工况下的电导纳信号,并分析二者的联系。实验结果表明,随着裂缝损伤的发展,压电片电导纳频谱发生了变化;压电片-粘结层-主体结构耦合系统的共振频率及电导信号峰值能表征混凝土裂缝深度的发展,但其存在稳定性缺陷;传统损伤指标中,绝对比例平均偏差(MAPD)和均方根偏差(RMSD)比相关系数(CCD)更适于监测混凝土裂缝的出现,而CCD则比MAPD和RMSD更适于定量分析裂缝的发展。此外,该文还得到了混凝土试块裂缝发展时损伤参数的具体数值,可供EMI健康监测实际应用时参考。     

考虑粘结层和阻抗解析表达式的压电阻抗模型

引用根据自由梁振动原理得到的一维梁结构机械阻抗解析表达式,并考虑压电陶瓷锆钛酸铅(PZT)和梁结构之间的粘结层对二者的应力应变传递过程的影响,改进了一维梁结构压电阻抗模型.在粘结系数ξ分别为0.01、0.02和1.00的3种粘结状态下,对5～80 kHz频率范围内PZT耦合电阻抗进行了数值计算.测量计算得到α-氰基丙烯酸乙酯、环氧树脂和改性丙烯酸酯三种粘结剂的粘结强度,分别为0.882 MPa、7.621 MPa和10.198 MPa,并在3种粘结状态下测量了5～80 kHz频率范围内PZT的耦合电阻抗.研究表明,数值模拟和实验测量所得的耦合电阻抗谱符合良好,数值计算与实验结果峰值对应频率的相对误差范围是0.25％～6.06％.     

环境温度对PZT阻抗特征的影响

机电阻抗(EMI)法是目前结构健康监测(SHM)技术中较热门的研究领域之一。实际应用中,EMI法测得的阻抗信号受温度干扰,因而对损伤产生误判。首先从理论上分析了温度导致阻抗发生变化的原因,然后以EMI法中典型的压电陶瓷(PZT-5H)型陶瓷传感器为研究对象,测试分析了温度对PZT电阻抗特征的影响规律。研究发现,阻抗峰值的频移与温度呈线性关系,且温度对峰值频移的影响与频率相关。进一步结合频率偏移及幅值的变化规律,建立了机电阻抗(EMI)法结构健康监测的温度效应修正模型。研究结果为消减环境温度对PZT阻抗特征的影响奠定了基础。     

聚丙烯压电驻极体薄膜声电传感器的性能

压电驻极体（也称为铁电驻极体）是以空间电荷驻极体为基体的一类新型压电功能材料,这种材料不仅具有与压电陶瓷相近的压电活性,同时拥有柔韧、低介电常数和低声阻抗等特点。本研究制备了基于聚丙烯（PP）压电驻极体薄膜的声电传感器,并采用电压放大电路和电荷放大电路对其在声频下的灵敏度进行了测量。结果表明,PP压电驻极体声电传感器在1 kHz下的电压灵敏度约为0.8 mV/Pa,并在300 Hz~10 kHz的声频范围内有良好的线性输出特性。     

压电传声器的设计与改进

用多孔压电驻极体薄膜替代传统驻极体电容式传声器(ECM)的声电转换单元,制作出压电传声器。利用压电驻极体超薄的优势和对结构进行改进,将压电传声器的厚度从3mm降低到了1mm。为了解决压电传声器灵敏度低的问题,在后端电路采用了30dB增益的管芯。同时,为了减小寄生电容对灵敏度的影响,采用了单面布铜的印刷线路板(PCB),但将该传声器接入手机使用时会有电磁干扰(EMI)。改进PCB的设计,采用双面布铜的PCB,加强了电磁屏蔽,成功解决了压电传声器的EMI问题。最后,利用压电驻极体薄膜的防水性,并对压电传声器的电路进行了防水保护,使得压电传声器达到了IPX7防水标准。     

PZT尺寸与位置对传感器导纳的影响

目前压电阻抗法应用中,锆钛酸铅压电陶瓷(PZT)片尺寸及粘贴位置选择的研究尚不充分。该文通过设计对比实验,研究了 PZT尺寸与粘贴位置对传感器导纳的影响机理。结果表明,包含被测结构信息的局部密集峰主要分布在谐振频段;PZT尺寸越大,谐振频段的局部密集峰越强。压电阻抗法中,PZT尺寸应结合检测频段包含谐振频段的原则来选择,PZT的粘贴位置将影响导纳曲线上的局部密集峰分布。研究结果为压电阻抗法应用中 PZT的尺寸与粘贴位置选择提供了参考依据。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.