共查询到20条相似文献,搜索用时 46 毫秒
1.
本文用GSMBE技术生长纯度GaAs和δ-掺杂GaAs/Al_xGa_(1-x)As结构二维电子气材料并对其电学性能进行了研究。对于纯度GaAs的GSMBE生长和研究,在低掺Si时,载流子浓度为2×10~(14)cm~(-3),77K时的迁移率可达84,000cm~2/V.s。对于用GSMBE技术生长的δ-掺杂GaAs/Al_xGa_(1-x)As二维电子气材料,在优化了材料结构和生长工艺后,得到了液氮温度和6K迁移率分别为173,583cm~2/V.5和7.67×10~5cm~2/V.s的高质量GaAs/Al_xGa_(1-x)As二维电子气材料。 相似文献
2.
3.
提出了一种新的生长过渡层的方法,并利用低压金属有机气相外延技术在InP初底上生长出高质量GaAs外延材料,用X射线双晶衍射测得5μm厚GaAs外延层的晶面衍射半峰高宽(FWHM)低至140arc sec。并制出GaAs金属半导体场效应晶体管(MESFET),其单位跨导为100mg/mm,可满足与长波长光这器件进行单片集成的需要。 相似文献
4.
本文在国内首次采用自行设计的碳纤维束源炉及固态源MBE技术生长了优质碳掺杂GaAs、AlGaAs及δ碳掺杂GaAs外延层。获得了空穴浓度从4×1014cm-3到2×1019cm-3的GaAs材料。用霍尔效应测量仪、电化学CV剖面仪和X射线双晶衍射仪分析了外延层的质量。用Nomarski干涉显微镜和原子力显微镜分析了GaAs的生长过程。结果表明碳是GaAsIIV族化合物半导体的极好的p型掺杂剂。 相似文献
5.
GaInAsSb是红外探测器中重要的半导体材料之一。我们用水平常压金属氧化物化学气相淀积(MOCVD)技术在n型GaSb衬底上成功地生长了GaInAsSb外延层,用PL谱、红外吸收谱、X射线衍射和扫描电子超声显微镜(ScanningElectronAcousticMicroscopy,SEAM)等实验手段对GaInAsSb外延层进行了表征。用GaInAsSb材料制作的红外探测器的光谱响应的截止波长达2.4μm,室温探测率D*达1×109cmHz(1/2)/W,2.25μm波长时的量子效率为30%。本文首次给出了GaInAsSb外延层的扫描电子超声显微镜像(SEAM像),为扫描电子超声显微镜在半导体材料方面的应用开辟了一个新的领域。 相似文献
6.
利用我们研制的常压MOVPE设备对国产TMGa、TMAl、TMIn和TMSb进行了鉴定,为此分别生长了GaAs、AlGaAs、InP、GaSb外延层和GaAs/AlAs、GaSb/InGaSb超晶格和GaAs/AlGaAs量子阱结构。表征材料纯度的77K载流予迁移率分别达到GaAs:μ_n=56600cm ̄2/V·s,Al_(0.25)Ga_(0.75)As:μ_n=5160cm ̄2/V·s,InP:μ_n=65300cm ̄2/V·s,GaSb:μ_p=5076cm ̄2/V·s。由10个周期的GaAs/AlAs超晶格结构组成的可见光区布拉格反射器已观测到很好的反射光谱和双晶X射线回摆曲线上高达±20级的卫星峰。GaAs/Al_(0.35)Ga_(0.65)As量子阱最小阱宽为10,在liK下由量子尺寸效应导致的光致发光峰能量移动为390meV,其线宽为12meV。这些结果表明上述金属有机化合物已达到较高质量。 相似文献
7.
选择刻蚀在GaAs工艺中是非常重要的一步。由于湿法腐蚀存在钻蚀和选择性差,且精度难以控制,因此有必要进行干法刻蚀的研究。虽然采用反应离子刻蚀(RIE)、磁增强反应离子刻蚀(MERIE)可以进行选择刻蚀,但是这两种方法在挖槽时会对器件造成较大损伤,影响器件性能。感应耦合等离子刻蚀(ICP)是一种低损伤、高刻蚀速率高选择比的刻蚀方法,在GaAs器件的制造中有突出的优点。本工作进行GaAs/AlGaAs 相似文献
8.
用固态源MBE技术生长了AlGaAsSb/InGaAsSb多量子阱材料,研究了通过改变多量子阱AlGaAsSb/InGaAsSb中的结构参数,如多量子阱中InGaAsSb的阱宽,AlGaAsSb的垒宽及垒层中Al组分和阱层中的In组分,多量子阱中的阱数等,来提高AlGaAsSb/InGaAsSb多量子阱的PL强度。 相似文献
9.
为探索砷化我阴极的光电灵敏度的影响因素,利用X射线光电子能谱、二次离子擀谱和电化学方法测试和分析了国内和国外GaAs光阴极材料GaAs/AlGaAs的C,O含量的空穴深度分布。实验发现,国内的材料在GaAs/AlGaAs 面及AlGaAs层的O含量分别为7.6%和10.6%,C深度分别为5.2×10^18atoms/cm^3和1.0×10^19atoms/cm^3,而国外的材料的O含量相应为1.0 相似文献
10.
利用二次离子质谱(SIMS)系统地研究了生长温度,Al组份x值和As_4压强对Siδ掺杂Al_xGa_(1-x)As的SIMS深度剖面,Si原子表面分凝和向衬底扩散的影响。实验发现,在外延生长Siδ掺杂Al_xGa_(1-x)As时,随着生长温度的提高或Al组份X值增加,Si掺杂分布SIMS峰都非对称展宽,表面分凝作用加强,但不影响Si原子的扩散,因此SIMS剖面的展宽与扩散无关。另外,我们还发现As_4压强高于1.5×10 ̄(-5)mbar时,As_4压强对δ掺杂空间分布影响不大,而As_4压强低于此压强时,Si掺杂分布峰宽度增加很快,这主要由杂质扩散作用引起。生长温度对掺杂分布峰影响最大,其次是Al组份影响,而较小As_4压强的影响不可忽视。这些研究结果对外延生长Siδ掺杂Al_xGa_(1-x)As材料是有价值的。 相似文献
11.
A. Yu. Egorov A. E. Zhukov A. R. Kovsh V. M. Ustinov V. V. Mamutin S. V. Ivanov V. N. Zhmerik A. F. Tsatsul’nikov D. A. Bedarev P. S. Kop’ev 《Technical Physics Letters》1998,24(12):942-944
Molecular beam epitaxy was used to fabricate GaAsN/GaAs and InGaAsN/GaAs heterostructures, and the influence of the growth
regimes on their characteristics was studied. It is shown that implantation of nitrogen causes a substantial long-wavelength
shift of the radiation. The possibility of obtaining 1.4 μm radiation at room temperature was demonstrated using In0.28Ga0.72As0.97N0.03/GaAs quantum wells.
Pis’ma Zh. Tekh. Fiz. 24, 81–87 (December 12, 1998) 相似文献
12.
该文使用传输矩阵法分析了GaInAsN/GaAs量子阱对电子的透射情况,并使用crosslight软件对GaInAsN/GaAs量子阱太阳能电池的伏安特性进行了数值模拟和分析。初步讨论了量子阱的阱宽和垒厚的变化对量子阱电池伏安特性的影响.模拟结果发现垒厚32nm、阱宽7nm的量子阱光伏性能表现良好。作为有源区,当将该量子阱加入到GaAs子电池中,InGaP/GaAs/Ge三结电池在AM0下的短路电流密度达到19.81mA/cm2,比未使用量子阱有源区的三结电池提高了20%。 相似文献
13.
Lateral wet oxidation in a cylindrical composite, GaAs/AlAs/GaAs, with varying thickness of the AlAs layer has been investigated. The oxidation depth in AlAs was measured in the temperature range of 400–480 °C. At given temperature and time, the depth increases with the increase in thickness. The thickness effect was successfully interpreted based on the kinetic model of boundary layer diffusion. The results are consistent with the findings from early studies on samples of square and rectangular cross-sections with the same activation energy of the thermal process. 相似文献
14.
B. Ya. Ber A. P. Kovarsky D. Yu. Kazantsev Yu. V. Trushin E. E. Zhurkin A. A. Schmidt S. F. Belykh 《Technical Physics Letters》2004,30(10):836-838
We have studied the possibility of using polyatomic ions as the primary projectile particles for the depth profiling of solid
heterostructures by means of secondary ion mass spectrometry (SIMS) in combination with ion etching. Bombardment of a target
by ionized oxygen clusters of the O
n
+
(n=3, 4) type allows the specific impact energy per primary atom to be reduced, which significantly improves the depth resolution.
It is shown that a beam of primary O
n
+
(n=3, 4) clusters with the specific impact energy as low as 1 keV per oxygen atom can be obtained using a standard ion source
with a magnetic mass separator. High-resolution depth profiles of a test heterostructure of the GaAs/δ-AlAs/GaAs/… type were
obtained using a magnetic sector mass spectrometer and a primary beam of O
3
+
ions with a specific energy of 1 keV per oxygen atom. The experimental data are compared with the results of computer simulation
of the ion sputtering process performed using the DITRIRS code. 相似文献
15.
N. Baba-Ali I. Harrison B. Tuck H. P. Ho M. Henini O. H. Hughes 《Journal of Materials Science: Materials in Electronics》1990,1(3):133-136
A 60 nm GaAs/AIAs superlattice has been annealed under a variety of conditions. In the case of samples annealed in an arsenic rich atmosphere, the disordering of the superlattice was observed to be non-uniform. This non-uniformity of the disordering is in contrast to the observed disordering of the sample annealed under arsenic dissociative pressure. In this case the disordering of the superlattice was uniform throughout the sample. Until now evidence for the depth dependency of the interdiffusion process relied solely on the interpretation of photoluminescence results. The data obtained from these experiments clearly indicate that the interdiffusion of GaAs/AIAs superlattices cannot be represented by one interdiffusion coefficient, as proposed by Tan and Gosele. In addition, it is demonstrated that the interdiffusion coefficient presented by Tan and Gosele overestimates the true interdiffusion coefficient at 1000° C. 相似文献
16.
17.
The electrical and chemical properties of r.f. sputtered Au/W Schottky barriers on GaAs studied by Auger electron spectroscopy are reported. There is considerable interest in such work at present owing to the refractory nature and the thermal stability of tungsten on GaAs. The built-in potential of tungsten on GaAs was measured to be about 0.65 eV by both I–V and C–V techniques. Although tungsten alone has been reported to be stable on GaAs even at elevated temperatures of up to 500°C, the presence of a gold overlay and/or pinholes in the r.f. sputtered tungsten reduces its refractory nature. W/Au Schottky barriers annealed at 475 and 575°C for 10 min showed no appreciable degradation in their electrical properties. Samples annealed at 475°C for 2 h and 800°C for 15 min showed some degradation and migration of gold through the tungsten film. GaAs field effect transistors (FETs) with tungsten gates 0.7 μm long showed a maximum measured gain of 14 dB at 8 GHz. 相似文献
18.
AlGaInP/GaAs异质结双极晶体管直流特性研究 总被引:1,自引:0,他引:1
制备了大尺寸AlGaInP/GaAs SHBT和DHBT,对其直流特性进行了测试,并分析了AlGaInP/GaA。单异质结晶体管(SHBT)和双异质结晶体管(DHBT)的直流特性差异,深入研究了影响AlGaInP/GaAsHBT开启电压(Voffset)的各个因素。结果表明:AlGaInP/GaAsHBT开启电压与外加基极电流密切相关,采用宽发射区可大大降低器件的开启电压。 相似文献
19.
Oleg Maksimov 《Materials Letters》2008,62(24):3969-3971
We annealed ZnSe/GaAs heterostructures in the oxygen atmosphere and investigated structural and optical properties of the forming films using X-ray diffraction and photoluminescence. While highly textured ZnO films were synthesized via low-temperature processing (~ 500 °C), high temperature processing (~ 800 °C) promoted reaction at the film/substrate interface and Zn loss from the film surface resulting in the polycrystalline ZnGa2O4 and ZnO2. 相似文献