slot波导包覆层对功率密度的影响

理论模拟研究了硅基绝缘(SOI)的slot波导中槽内限制功率与slot波导的结构参数以及包覆层折射率的关系.结果表明,如果包覆层的折射率偏离衬底SiO2的折射率,相同参数下的slot波导的传输损耗大于包覆层为SiO2的结构的传输损耗.分析表明,如果包层与衬底折射率不同,限制的光功率会从slot缝隙中渗透到折射率较高的衬底或者包层中,从而引起能量的损耗.理论模拟得到了在缝隙宽度为0.12μm的情况下,slot波导槽内最大的光功率限制为28.54%,这个值包含了纳米线波导与slot波导直接耦合产生的耦合损耗以及slot波导自身的传输损耗.     

改进长周期波导光栅折射率传感特性的研究

提出了一种附加高折射率覆盖层的长周期波导光栅折射率传感器结构.通过模拟外折射率变化所引起的高阶模式等效折射率的改变以及该高阶模式与基模相耦合的谐振波长的漂移,研究了长周期波导光栅对外界环境折射率的传感特性.模拟表明,高折射率外覆盖层的加入会使得原有的覆盖层高阶模式发生重组,高阶模式等效折射率和模式耦合的谐振波长随之发生跳变.此时,长周期波导光栅外折射率传感器的敏感度和工作范围将极大地提高.     

含左手材料和单负材料三层平板波导中TE模的传输特性

研究了以左手材料为衬底和单负材料为覆盖层三层平板波导中TE模的传输特性,为波导器件的设计提供理论支持。首先导出了归一化有效厚度H与归一化频率ν的关系,然后数值计算分析了三层平板波导的传输特性。结果表明,该三层平板波导TE模具有以下特性：1）当导波层与衬底或覆盖层磁导率的比值的增大时,归一化有效折射率b随频率ν的变化率减小。2）当不对称因子a趋近于0时,b随ν单调变化;当a较大时,在截止频率附近,TE₁、TE₂、TE₃、TE₄和TE₅模出现双值现象。3）当a增大时,H-ν曲线从左向右移动。4）对于TE₀模,H出现负值。     

聚合物光波导放大器材料的光学参数及器件制备

使用甲基丙烯酸甲酯(MMA)和甲基丙稀酸环氧丙酯(GMA)共聚,并加入双酚A环氧脂(bis-phenol-A-epoxy)来调节折射率,制备了无源波导材料.使用铒的配合物ErYb(DBM) 2M和MMA、GMA共聚,再加入双酚A环氧树脂调节折射率,制备了用于光波导放大器有源波导料使用椭偏仪对无源和有源的聚合物薄膜的折射率、消光系数和厚度进行了测量.无源的聚物折射率随着环氧树脂含量的增加而线性增加.铒的配合物共聚进聚合物基质中使1.55 μm波段折射率和消光系数增加.无源和有源波导材料的折射率可调节范围在大约在1.48～1.53厚度可调节范围大约在1～6 μm.用有源聚合物材料作芯层、无源聚合物材料作包层,制备了1.55 μm单模有源波导,并得到了圆形的近场光斑.     

聚合物波导马赫-曾德折射率传感器的设计和制备

以聚合物ZPU44和ZPU46作为波导包层和芯层材料,设计并制备了基于Mach-Zehnder干涉仪(MZI)的集成折射率传感器。设计并优化了波导截面参数、弯曲半径和传感窗长度等结构参数,分析了其折射率传感特性,进而采用光刻、反应离子刻蚀(RIE)等传统的微加工工艺制备了聚合物MZI折射率传感芯片。测试结果表明,制备的聚合物MZI传感器在1.33~1.44的折射率变化范围内具有较好的线性度,折射率灵敏度约为88dBm/RIU,与设计基本符合。本文的聚合物折射率传感器传感窗长度小,容易实现阵列化,在生化传感领域有很好的应用前景。     

条形介质加载型表面等离子体波导传输特性的研究

采用二维时域有限差分(FDTD)法,分析对比了 介质-金属(IM)结构和金属-介质-金属(MIM) 结构波导对光波传输特性的影响,以及通过对IM结构的尺寸、折射率进行优化得到最佳传 输长度。数值 结果表明,IM结构波导能使光波传输距离更长。对IM波导结构研究发现,当介质层厚为 300nm,金属 层厚为200nm时,传输效果最佳。基于这个参数的IM结构,计算介质 层折射率对IM波导光传输特性的影响发现,介质层折射率为1.5时, 在模场约束较好的情况下,传输损耗降低,表面等离 子体波的传输长度最长。整体优化后的条型波导可以实现最大传输距离为37μm。这一设计和优化波导结构 参数的方法不仅拓宽了介质加载型表面等离子体激元(SPP)波导结构的理论基础,在纳米光 学集成器件研究上也具有一定的应用潜能。     

高折射率材料填充的光子晶体光纤传输谱分析

利用有限差分法,研究了一种在包层小孔中填充可变折射率材料的新型光子晶体光纤的传输特性,并讨论了其在传感器设计方面的应用前景.分别模拟了包层孔为单圈、两圈、三圈结构下的光纤传输谱,在两圈孔的情况下,找到了合适的工作波长区间,并发现该工作区间的位置对于填充材料的折射率表现得很敏感,且呈近似线性关系.该折射率在1.48～1.8区间内每变化0.01,导波区间位置平均移动24 nm.结论表明,与传统的光波导折射率传感器相比,这种新型光子晶体光纤折射率传感器具有测量范围较大,灵敏度较高的优点.     

偏振不灵敏硅基二氧化硅阵列波导光栅设计

以深刻蚀和热氧化工艺为基础,提出了一种新的阵列波导光栅(AWG)制备技术.这一工艺可使AWG中的波导侧向留有一硅层.采用有限元法和有限差分束传播法分别计算了存在这一硅层时的波导应力分布和有效折射率.结果表明由于这一侧向硅层的存在,使AWG中波导在水平和垂直方向的应力趋于一致,AWG的偏振相关波长明显减小.     

基于对称平板波导型SPR液体折射率传感特性

表面等离子体共振(SPR)技术在外界环境折射率测量上有着广泛应用.设计了一种对称平板波导结构,利用时域有限差分法对波导结构中SPR效应与外界环境折射率的关系进行数值模拟,对金属材料选择以及传感区域长度进行了优化,并研究了不同阶次的模式对传感器灵敏度的影响.仿真结果表明:当外界环境折射率为1.38时,相较于基模条件下41...     

偏振不灵敏硅基二氧化硅阵列波导光栅设计

以深刻蚀和热氧化工艺为基础,提出了一种新的阵列波导光栅(AWG)制备技术.这一工艺可使AWG中的波导侧向留有一硅层.采用有限元法和有限差分束传播法分别计算了存在这一硅层时的波导应力分布和有效折射率.结果表明由于这一侧向硅层的存在,使AWG中波导在水平和垂直方向的应力趋于一致,AWG的偏振相关波长明显减小     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.