共查询到18条相似文献,搜索用时 81 毫秒
1.
2.
3.
4.
低温生长ITO薄膜及其在太阳电池中的应用 总被引:1,自引:1,他引:0
氧化铟锡(ITO)同时结合了可见光范围内高透过率和高电导率等特性,被广泛应用于Si基薄膜太阳电池中。本文侧重研究了采用反应热蒸发(RTE)技术低温(约160℃)生长ITO透明导电薄膜过程中不同Sn掺杂含量对薄膜微观结构以及光电性能的影响。实验结果表明,随着Sn掺杂含量的增加,ITO薄膜微观结构稍有变化,薄膜的电子迁移率呈现先增大后减小的趋势,薄膜的光学带隙一定程度上呈现展宽趋势;对于较高的Sn掺杂含量,在低温条件下电离杂质散射和中性杂质散射成为影响电子迁移率降低的重要因素。经过薄膜生长优化,较佳的Sn掺杂含量为6.0wt.%,ITO薄膜电阻率为3.74×10-4Ω·cm,电子迁移率为47cm2/Vs,载流子浓度为3.71×1020cm-3,且在380~900nm波长范围内的平均透过率约87%。将其应用于结构为SS/Ag/ZnO/nip aSiGe:H/nipa-Si:H/ITO/Al的n-i-p型a-Si:H/a-SiGe:H叠层太阳电池,取得的光电转化效率达10.51%(开路电压Voc=1.66V,短路电流密度Jsc=9.31mA/cm2,填充因子FF=0.68)。 相似文献
5.
6.
7.
针对a-Si:H(n)/c-Si(p)双面异质结太阳电池结构,数值研究了不同p型单晶硅衬底厚度、氧缺陷密度、电阻率以及异质结界面缺陷态密度与电池转化效率之间的关系.结果表明:异质结界面缺陷态密度是影响电池性能的最主要因素,衬底前表面界面缺陷密度增大,主要降低开路电压和填充因子,衬底背表面界面缺陷态密度主要影响短路电流和填充因子.其次,p型硅衬底厚度减小和氧缺陷密度的增大,均导致短路电流密度下降,电池转化效率降低,特别是在界面缺陷态密度较低时,氧缺陷密度对电池性能影响较大;最后,在衬底前表面界面缺陷态密度为5×1010 cm-2,后表面界面缺陷态密度为5×1010 cm-2以及氧缺陷密度为109 cm-2时,衬底电阻率存在最优值1 Ω·cm. 相似文献
8.
低温高速率沉积非晶硅薄膜及太阳电池 总被引:1,自引:0,他引:1
采用射频等离子体增强化学气相沉积(RF-PECVD)技术,保持沉积温度在125℃制备非晶硅薄膜材料及太阳电池。在85 Pa的低压下以及400~667 Pa的高压下,改变Si H4浓度和辉光功率等沉积参数,对本征a-Si材料的性能进行优化。结果表明,在高压下,合适的Si H4浓度和压力功率比可以使a-Si材料的光电特性得到优化,并且薄膜的沉积速率得到一定程度的提高。采用低压低速和高压高速的沉积条件,在125℃的低温条件下制备出效率为6.7%的单结a-Si电池,高压下本征层a-Si材料的沉积速率由0.06~0.08 nm/s提高到0.17~0.19 nm/s。 相似文献
9.
利用直流磁控溅射系统在p型SiCGe和载玻片衬底上沉积ITO薄膜,并研究其ITO与p型SiCGe的接触特性与p型SiCGe制备条件、退火温度、退火时间的关系.结果表明:p型SiCGe制备条件的不同影响着退火使ITO/p型SiCGe的接触由线性变为非线性或者由非线性变为线性;随着退火温度的增加,接触电阻先减小后增加,这是由于退火过程中,接触界面层发生了反应以及接触势垒高度与宽度发生了变化造成的.当退火温度为500℃时,其接触电阻达到最小值,此时ITO薄膜的最高透过率高达90%,方块电阻为20.6Ω/□. 相似文献
10.
在射频等离子体增强化学气相沉积(RF-PECVD)系统的腔室内,对聚对苯二甲酸乙二醇酯(PET)塑料薄膜进行Ar等离子体预处理,并采用光发射谱(OES)对不同处理参数下的氩气辉光状态进行在线监测。对处理前后PET及PET/ITO进行透过谱、原子力显微镜(AFM)以及扫描电镜(SEM)的测试结果表明,Ar等离子体处理改善了PET塑料薄膜的表面形貌,使之更适合ITO薄膜的生长。以Ar等离子体处理的PET/ITO为衬底,在沉积温度为125℃条件下,制备出效率为5.4%的p-i-n型非晶硅(a-Si)柔性太阳电池。 相似文献
11.
Optimization of n/i and i/p buffer layers in n-i-p hydrogenated microcrystalline silicon solar cells
Hydrogenated microcrystalline silicon (μc-Si:H) intrinsic films and solar cells with n-i-p configuration were prepared by plasma enhanced chemical vapor deposition (PECVD). The influence of n/i and i/p buffer layerson the μc-Si:H cell performance was studied in detail. The experimental results demonstrated that the efficiency is much improved when there is a higher crystallinity at n/i interface and an optimized a-Si:H buffer layer at i/p interface. By combining the above methods, the performance ofμc-Si:H single-junction and a-Si:H/μc-Si:H tandemsolar ceils has been significantly improved. 相似文献
12.
Optimization of n/i and i/p buffer layers in n-i-p hydrogenated microcrystalline silicon solar cells 总被引:1,自引:0,他引:1
Hydrogenated microcrystalline silicon (μc-Si:H) intrinsic films and solar cells with n-i-p configuration were prepared by plasma enhanced chemical vapor deposition (PECVD). The influence of n/i and i/p buffer layers on the μc-Si:H cell performance was studied in detail. The experimental results demonstrated that the efficiency is much improved when there is a higher crystallinity at n/i interface and an optimized a-Si:H buffer layer at i/p interface. By combining the above methods, the performance of μc-Si:H single-junction and a-Si:H/μc-Si:H tandem solar cells has been significantly improved. 相似文献
13.
In this paper, the influence of i/p interface buffer layer on the performance of flexible n–i–p a-Si:H thin film solar cells is studied. The results show that the dopant distribution in the buffer layer has large effect on the property of solar cells. A larger open circuit voltage and fill factor can be obtained when methane is introduced into the chamber prior to diborane during the deposition of buffer layer. The AMPS simulation indicates that it is beneficial to improve the built-in electric field in the i layer when the carbon is doped prior to boron, thus the carrier transport properties are improved. By further optimizing the deposition parameter, an initial conversion efficiency of 5.668% is achieved for the a-Si:H thin film solar cells on the PI substrates at 150 °C. 相似文献
14.
We fabricated solution-processed flexible inverted organic solar cell (IOSC) modules (10 cm × 10 cm) on roll-to-roll (RTR) sputtered ITO/Ag/ITO multilayer cathodes. By using a pilot-scale RTR sputtering system equipped with mid-range frequency power for dual ITO targets and direct current power for the Ag target, we were able to continuously deposit a high-quality ITO/Ag/ITO multilayer on PET substrate with a width of 700 mm and length of 20,000 mm as a function of Ag thickness. At the Ag thickness of 12 nm, the ITO/Ag/ITO multilayer had a very low sheet resistance of 3.03 Ohm/square and high transmittance of 88.17%, which are better values than those of amorphous ITO film. A strip-type ITO/Ag/ITO cathode was successfully patterned using a RTR wet etching process. Successful operation of flexible IOSC modules on RTR sputtered ITO/Ag/ITO cathodes indicate that the RTR sputtering technique is a promising coating process for fabrication of high-quality transparent and flexible cathodes and can advance the commercialization of cost-efficient flexible IOSCs. 相似文献
15.
采用孪生对靶直流磁控溅射的方法在室温下制备高质量的Ga掺杂ZnO(ZGO)透明导电薄膜,用HCl腐蚀的方法获得满足光散射特性的绒面ZGO薄膜。制备的ZGO样品为具有六角纤锌矿结构的多晶膜,具有(002)方向的择优取向。腐蚀后,绒面ZGO薄膜的晶粒度减小,电阻率基本不变。在可见光范围内,绒面ZGO的反射率比平面ZGO的反射率下降了10%左右。将绒面ZGO薄膜应用于p-i-n型非晶Si薄膜太阳电池中,有效提高了太阳电池性能,使得电池的短路电流提高到17.79 mA/cm2,电池的转换效率增加到7.23%。 相似文献
16.
《Progress in Photovoltaics: Research and Applications》2017,25(8):679-695
Given the rapid progress in perovskite solar cells in recent years, perovskite/silicon (Si) tandem structure has been proposed to be a potentially cost‐effective improvement on Si solar cells because of its higher efficiency at a minimal additional cost. As part of the evaluation, it is important to conduct a life cycle assessment on such technology in order to guide research efforts towards cell designs with minimum environmental impacts. Here, we carry out a life cycle assessment to assess global warming, human toxicity, freshwater eutrophication and ecotoxicity and abiotic depletion potential impacts and energy payback time associated with three perovskite/Si tandem cell structures using silver (Ag), gold (Au) and aluminium (Al) as top electrodes compared with p–n junction and hetero‐junction with intrinsic inverted layer Si solar cells. It was found that the replacement of the metal electrode with indium tin oxide/metal grid in the tandem cell reduces the environmental impacts significantly compared with the perovskite cell. For all the impacts assessed, we conclude that the perovskite/Si tandem using Al as top electrode has better environmental outcomes, including energy payback time, when compared with the other tandem structures studied. Use of Al in preference to noble metals for contacts, Si p–n junction in preference to intrinsic inverted layer and the avoidance of 2,20,7,70‐tetrakis(N ,N‐di‐p‐methoxyphenylamine)9,90‐spirobifluorene (Spiro‐OMeTAD) are environmentally beneficial. The key result found of this work is that the most important factor for the better environmental impacts of these tandem solar cells is the transparency and electrical conductivity of the perovskite layer after it fails. Copyright © 2017 John Wiley & Sons, Ltd. 相似文献
17.
M. M. de Jong P. J. Sonneveld J. Baggerman C. J. M. van Rijn J. K. Rath R. E. I. Schropp 《Progress in Photovoltaics: Research and Applications》2014,22(5):540-547
In this study, we present a new light absorption enhancement method for p‐i‐n thin film silicon solar cells using pyramidal surface structures, larger than the wavelength of visible light. Calculations show a maximum possible current enhancement of 45% compared with cells on a flat substrate. We deposited amorphous silicon (a‐Si) thin film solar cells directly onto periodically pyramidal‐structured polycarbonate (PC) substrates, which show a significant increase (30%) in short‐circuit current over reference cells deposited on flat glass substrates. The current of the cells on our pyramidal structures on PC is only slightly lower than that of cells on Asahi U‐type TCO glass (Asahi Glass Co., Tokyo, Japan), but suffer from a somewhat lower open circuit voltage and fill factor. Because the used substrates have a locally flat surface area due to the fabrication process, we believe that the current enhancement in the cells on structured PC can be increased using larger or more closely spaced pyramids, which can have a smaller flat surface area. Copyright © 2012 John Wiley & Sons, Ltd. 相似文献
18.
为提高a-Si/μc-Si叠层太阳电池的效率,采用射频等离子体增强化学气相沉积(RF-PECVD)技术,制备了系列n型掺磷硅氧(SiOx:H)薄膜作为中间层,研究了CO2/Si H4气体流量比、沉积功率和PH3掺杂浓度等工艺参数对材料光电特性的影响,获得了折射率、电导率和禁带宽度能够在较大范围内调控的SiOx:H薄膜。 相似文献