溶液沉淀法制备高导热氮化硼/多层石墨烯/聚丙烯酸柔性自修复材料

以氮化硼(BN)和多层石墨烯(MG)为复合填料,通过溶液沉淀法,制备了聚丙烯酸基复合高导热界面材料。研究了填料含量和配比对复合材料导热性能的影响,实验发现随着BN和MG含量的增加导热性能先升高后降低,导热系数在BN∶MG=1∶0.3时最大(6.0 W·m~(-1)·K~(-1))。通过扫描电镜(SEM)分析复合材料的微观形貌,结果显示在BN∶MG=1∶0.3时,复合填料之间的协同作用发挥的最好,形成了致密的导热网络,因而有效的提高了复合材料的导热性能。该材料除了具有较高的导热性能外,还具有一定的柔性、可塑性和自修复性能,在一定条件下能够对热界面材料的内部损伤进行修复,从而大大延长热界面材料的使用寿命。这对于维持热界面材料的正常使用,确保设备内部热量的有效传出具有重要的意义。     

贻贝仿生修饰氮化硼/石墨烯微片环氧导热绝缘材料的制备及性能研究

随着电子技术快速的发展,聚合物材料自身较低的热导率已不能满足现代电子器件的散热需求,因此提高聚合物热导率,实现高效率的传热具有重要意义。利用多巴胺优异的包覆性能实现对氮化硼(BN)粉末和石墨烯微片(GNPs)的表面修饰。然后将功能化的BN和GNPs作为导热填料,制备了系列环氧树脂(EP/BN/mBN/m(BN/GNP))导热绝缘复合材料,研究了填料的种类和含量对复合材料导热性能和电绝缘性能的影响。结果表明,经多巴胺改性后的BN和GNPs能比较均匀分散于环氧树脂体系中;当添加30 wt%的m(BN/GNP)(1∶1)填料时,复合材料的热导率达到0.61 W/(m·K),与纯环氧树脂材料相比提高了238.9%,且该复合材料仍保持优异的绝缘性能。     

环氧树脂/氮化硼/石墨烯纳米片导热复合材料的制备与性能研究

采用十八烷基三甲基溴化铵(OTAB)改性的氮化硼(BN)微粒和石墨烯纳米片(GNP)为导热填料,制备了系列环氧树脂(EP)/改性BN(BNOTAB)/GNP导热绝缘复合材料,研究了填料的种类和含量对复合材料导热性能、电绝缘性能及热稳定性能的影响。结果表明,经OTAB改性后的BN微粒能比较均匀分散于环氧树脂体系中;当m(BNOTAB)/m(GNP)=6∶4时(填料总含量为10%),复合材料的热导率达到0.48 W/(m·K),较纯环氧树脂材料提高了108.7%,而该复合材料仍保持优异的绝缘性能;TGA与DSC结果显示,BNOTAB/GNP填充微粒的加入可以提高环氧树脂复合材料的热稳定性。     

BN表面沉积纳米Sn对BN/环氧树脂复合材料导热绝缘性能的影响

采用液相还原法,制备了BN表面沉积纳米Sn粒子(BN-Sn NPs)杂化材料,用于环氧树脂(EP)的导热绝缘填料。BN-Sn NPs表面纳米Sn的粒径和熔点分别为10~30 nm 和166.5~195.3℃。BN表面沉积纳米Sn后,粉体Zeta电位及压片的导热系数增加,EP滴在压片表面的接触角降低。在BN-Sn NPs/EP复合材料固化过程中,BN-Sn NPs表面纳米Sn熔融烧结,有利于填料相互桥联在一起,降低接触热阻,并改善界面性能,从而提高BN-Sn NPs/EP复合材料的导热系数。当填料体积含量为30vol%时,BN-Sn NPs/EP复合材料的导热系数达1.61 W(m·K)?1,比未改性BN/EP复合材料的导热系数(1.08 W(m·K)?1)提高了近50%。Monte Carlo法模拟表明,BN和BN-Sn NPs在EP基体中的接触热阻(R_c)分别为6.1×106 K·W?1和3.7×106 K·W?1。与未改性BN/EP复合材料相比,BN-Sn NPs/EP复合材料的介质损耗增加,介电强度及体积电阻率降低,但仍具有良好电绝缘性能。      

原位聚合法制备SiC@SiO2/BN/PI复合材料及其表征

聚酰亚胺复合材料以其优异的性能以及在航空航天、轨道交通、微电子等领域广泛的应用前景引起越来越多的关注。在750 ℃条件下对SiC晶须进行表面氧化处理, 形成SiC@SiO₂包覆结构晶须, 与BN颗粒构成复合填料, 分别采用硅烷偶联剂和钛酸酯偶联剂进行表面改性, 用原位聚合法制备了SiC@SiO₂/BN/PI(PI:聚酰亚胺)复合材料。采用傅里叶变换红外光谱仪(FT-IR)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)和X射线衍射仪(XRD)等进行结构和性能表征。结果表明: 晶须与颗粒质量比为4 : 1时, 复合填料在PI基体内形成了有效的导热网络, 且当填料含量为45wt%时, SiC@SiO₂/BN/PI复合材料导热系数达到0.95 W/(m·K)。SiC@SiO₂/BN/PI复合材料的力学性能随着复合填料的种类和数量的变化呈现规律性变化。SiO₂氧化层阻断复合填料间自由电子的移动, SiC@SiO₂/BN/PI复合材料的电气绝缘性能下降幅度减小。     

KH550改性氮化硼/氰酸酯树脂导热复合材料的研究

采用硅烷偶联剂KH550对氮化硼粉末(BN)进行了表面改性,并制备了氰酸酯树脂/氮化硼导热复合材料。研究了BN含量对复合材料的导热性能、电绝缘性能的影响,并运用扫描电子显微镜对材料的断面形貌进行了观察。结果表明:少量BN的加入能有效改善氰酸酯复合材料的导热性能,且复合材料仍保持良好的电绝缘性能。当BN的体积分数达到23.6%时,复合材料的导热系数为1.33W·m-1·K-1,为纯树脂材料的4.6倍。     

石墨烯季戊四醇相变复合材料导热性能的分子动力学研究

低导热是限制储能材料实际应用的一大缺点,具有极高导热系数的石墨烯可作为导热填料有效改善储能材料的导热性能。本文通过反向非平衡分子动力学的方法,借助Materials Studio软件,模拟研究了石墨烯(GE)质量分数为0.5%、1%、1.5%、2%、2.5%、3%的石墨烯/季戊四醇(GE/PE)固-固相变复合材料的导热性能和内部相互作用。结果表明:石墨烯的添加可有效提升季戊四醇的导热性能,随着GE质量分数的增加,GE/PE复合相变材料的导热率、界面热导以及相互作用能均逐渐增大,且趋势幅度相一致,材料整体导热系数的增加归因于石墨烯结构的变化。本文可为石墨烯改善季戊四醇导热性的实验研究提供指导。     

原位反应加工法制备氮化硼/聚甲基丙烯酸甲酯/聚乙烯导热复合材料的性能EI北大核心CSCD

以氮化硼(BN)为导热填料、聚甲基丙烯酸甲酯(PMMA)和高密度聚乙烯(HDPE)为基体,利用甲基丙烯酸甲酯(MMA)的原位反应加工成功制备了BN/PMMA/HDPE高导热复合材料。研究了PMMA与HDPE不同质量比时的相形态,通过扫描电子显微镜发现,当PMMA与HDPE的质量比为9:11时,复合材料构成了完善的双连续结构,BN选择性分散在原位反应加工法制备的BN/PMMA/HDPE高导热复合材料的PMMA相中,这种双连续结构及选择性分散的设计有利于提升材料的导热性能和耐热性能。导热性能测试结果表明,当BN的质量分数为40%时,原位反应加工法制备的BN/PMMA/HDPE导热复合材料的导热系数达到了0.92W/(m·K),相对于纯HDPE提升了283%,相对于简单熔融共混法制备的BN/PMMA/HDPE导热复合材料提升了接近20%。同时,动态力学热分析表明,在温度为40℃时,BN的质量分数为30%时,原位反应加工法制备的BN/PMMA/HDPE导热复合材料的储能模量比简单熔融共混法制备的BN/PMMA/HDPE导热复合材料的储能模量提升了46%,并且差示扫描量热分析及维卡软化点测试表明,其玻璃化转变温度、结晶温度和维卡软化点都有提升。其研究为制备高导热耐热复合材料提供了一种新的方法。     

BN/GS填充EP导热绝缘复合材料的制备

采用化学还原法,利用氮化硼(BN)和氧化石墨烯(GO)制备了一种新型的具有三维网络结构的氮化硼/石墨烯(BN/GS)复合填料,并通过共混的方式制备了环氧树脂(EP)复合材料。运用包括高阻计及四探针测试系统等多种技术手段表征复合材料的结构和性能。研究结果表明,实验成功制备了具有三维网络结构的BN/GS复合填料,复合材料的热导率和热稳定性随着填料含量的增大而获得明显提升。由于GS在这种预制复合填料中的桥接作用,显著降低了界面热阻,BN/GS复合填料相比单一填料BN对复合材料热导率增加的效果更加突出,填料量达30wt%时,BN/GS/EP的热导率达到EP的热导率的5.38倍;由于GS含量低以及BN隔断GS之间的电子传输,复合材料仍保持良好的电绝缘性能。     

熔盐法合成高导热磷化硼及其热管理性能研究

随着电力电子器件封装密度提高, 开发导热性能优异的热界面材料受到了广泛关注。绝大多数传统导热填料的热导率较低, 因此合成新型高导热填料是提高热界面材料导热性能的重要途径。本研究通过简单的熔盐法合成了高导热的磷化硼(BP)颗粒, 与氮化硼(h-BN)混合并通过搅拌和浇注的方法填充到环氧树脂(EP)基体中制备得到树脂基复合材料(BP-BN/EP)。实验结果表明：采用三盐法(NaCl : KCl : LiCl)合成的BP产率最高达到74%, 相对于单盐法(41%)和双盐法(39%)分别提高了33%和35%。对于BP-BN/EP复合材料, 复合材料的微结构显示BP和BN颗粒均匀分布在环氧树脂基体。当混合填料体积分数为30%时, 该复合材料的热导率达到1.81 W•m^-1•K^-1, 是纯树脂热导率(0.21 W•m^-1•K^-1)的8.6倍, 这与BP颗粒作为桥梁连接相邻BN颗粒形成导热网络有关。除此以外, 相较于不含BP的复合材料(SBN-BN/EP), BP-BN/EP复合材料展现出更加优异的热导率、热稳定性和较好的热力学性能。因此, 熔盐法合成的BP在热管理领域具有较大的应用前景。     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Bulk crystalline BaPb34Bi14O3: A ceramic superconductor

The preparation conditions of the high T_C ceramic superconductor Ba(Pb,Bi)O₃ is correlated with the superconducting transition. Transition onsets of all materials are similar, but transition widths and transition completeness is strongly dependent on firing temperature. Only materials prepared over a narrow temperature range, resulting in a nearly ideal weight loss, have a complete and narrow transition.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Electrostriction in Pb (Zn13Nb23)O3

The electrostriction in $\text{Pb (Zn}{}_{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}\text{Nb}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}\text{)}\text{O}{}_3$ crystals has been investigated using a strain gauge method. In the ferroelectric phase below 140 C, the strain vs the electric field shows a hysteresis, which is ascribed to the effect of ferroelectric domains. A quadratic relation holds between the strain x and the electric polarization P as x = QP² above about 170 C in the paraelectric phase. Values of the electrostrictive Q coefficients are determined from the measurements near 190 C, as Q₁₁ = 1.6·10^?2m⁴/C², Q₁₂ = ?0.86·10^?2m⁴/C², and Q₄₄ = 0.85·10^?2m⁴/C².     

Magnetic,electrical and thermal studies on the V1−xMox02

The monoclinic-to-tetragonal structure transition of oxides V_1?xMo_x0₂ with $\text{0≤}\text{x}\text{≤0.20}$ has been studied by means of DTA, X-ray diffraction, magnetic susceptibility (powder samples) and electrical conductivity (single crystals) measurements within the temperature region 80 K to 400 K. A linear decrease of the transition temperature of 11 K per atom % Mo was observed. The magnetic susceptibility of the low temperature phase was found to be temperature independent paramagnetic for all preparations. Electrical conductivity measurements on the same phase showed crystals with $\text{x}\text{? 0.04}$ to be semiconducting, while a metallic behavior was observed in the region $\text{0.10 ?}\text{x}\text{? 0.14}$.     

n-PbTep+−Pb1−xSnxTe heterojunctions prepared by a modified hot wall technique

$\text{n-PbTe}\text{p}{}^{\mathrm{+}}\text{?}\text{Pb}{}_{\mathrm{1?x}}\text{Sn}{}_{\mathrm{x}}\text{Te}$ heterojunctions with a long wavelength spectral cutoff (λ_c ≈ 6 μm) were prepared using the double-channel hot wall technique. The electrical and photoelectrical properties of the heterojunctions at 77, 197 and 300 K were investigated. Detectors with R_oA equal to 170 Ω cm² and a quantum efficiency of 25–40% were obtained. Reasons for the shift of the long wavelength spectral cutoff of the heterojunctions towards shorter wavelengths are given.     

Reactive plasma deposited SixCyHz films

Si_xC_yH_z films have been prepared at 200°C by reactive plasma deposition from SiH₄ and CH₄ diluted in helium in a tubular reactor. These films have a ratio s (equal to $\text{Si}\text{(}\text{Si+C}\text{))}$ ranging from 0.2 to 0.8, a refractive index ranging from 1.96 to 2.6 and an optical energy band gap in the range 2.7-2.2 eV. The total quantity of hydrogen in the film is 40% when s=0.5. Infrared analysis shows that these films have large fractions of homonuclear bonds and that this material is best described as a polymer. Mass spectrometric measurements of the gaseous products formed in the SiH₄-CH₄-He plasma have been performed and the results are related to the composition of the deposited layers.     

Core-current-enhanced domain-wall pinning in nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon

We have studied the influence of surface fields H/sub p/ (generated by either direct or alternating core current) on soft magnetic properties of amorphous and nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon. While in an amorphous ribbon the coercive field H/sub c/ decreases with H/sub p/, in the same optimally annealed ribbon (H/sub c/=1.3 A/m, M/sub m//spl ap/M/sub s/) H/sub c/ increases with H/sub p/ for all the explored types of H/sub p/ (static and dynamic with different phases with respect to that of the magnetizing field H). The unexpected increase of H/sub c/ in nanocrystalline ribbon is associated with the influence of H/sub p/ on the surface and main (inner) domain structure. Here, we develop a model that takes into account this influence and explains the experimental results.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.