共查询到20条相似文献,搜索用时 93 毫秒
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采用微波等离子体方法在铜片上沉积了多晶金刚石薄膜,用该薄膜制成的场致发射体的开启电压较低,发射电流密度较高。利用自制的场致发射阵列阴极高真空测试台测试了1~100mA/cm 相似文献
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常开型后栅极场致发射显示板工作特性的研究 总被引:2,自引:1,他引:2
常开型后栅极场致发射显示板是一种新型的场致发射器件.它直接利用阳极使阴极产生场致电子发射,而通过埋在阴极之下的栅极上施加负电压来阻止阴极产生场致电子发射来调制显示所需的图像.为了研究该场致发射显示板的阴极发射特性,本文采用有限元法对场致发射区域内的电场分布进行了模拟计算,用Fowler-Nordheim(F-N)公式计算了阴极表面的发射情况.并研究了阳极电压、阴极电压、阴调距、阴极宽度和阴极厚度等参数的改变对阴极发射特性和栅极调制能力的影响.计算结果显示阴极发射特性和栅极调制能力与上述电参数和结构参数关系密切,从而为优化设计这种显示器件提供了方向. 相似文献
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新型碳纳米管场致发射显示驱动电路的研究 总被引:1,自引:0,他引:1
采用碳纳米管作为发射源的场致发射显示器是一种新型的平板显示技术,文章研究一种碳纳米管场致发射显示器件的驱动方法。该方法灰度等级实现方法简单,大大降低了扫描电极频率,有效地解决了高压和高速度之间的矛盾,能够满足用丝网印刷制备碳纳米管阴极的场致发射显示器件驱动电压高的要求。 相似文献
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描述了真空微电子荧光平板显示器件的工作原理,提出了采用反应离子刻蚀法制作大规模场致发射阵列的工艺,在动态真空系统中测定了荧光平板显示器件的场发射特性,并获得了结果。 相似文献
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介绍了具有广阔应用前景的平板显示器件——场致发射显示板及其优良的显示性能。三极结构具有低压调制的优点,而后栅极场致发射显示板更具有结构简单、发射均匀性好的优势。采用丝网印刷工艺成功地制作了后栅极场致发射显示板,利用碳纳米管作为阴极材料,并对介质层厚度对器件的影响、老炼、发光均匀性等问题进行了探讨。 相似文献
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本文提出采用镍硅颗粒薄膜作为表面传导电子发射显示的发射体材料,通过光刻和磁控溅射在两电极(10μm间隙)之间制备30 nm厚的镍硅颗粒膜。施加三角波电压进行电形成工艺,并测试了器件的电学特性。获得主要结果有,在器件阳极电压2000 V和器件阴极电压13 V的作用下,可以重复探测到稳定的器件发射电流,并且随器件阴极电压的增加而明显增加,最大的发射电流达到了1.84μA(共18个单元);电形成过程中,单个发射体单元的薄膜电阻从13Ω增加到10913Ω;通过对器件发射电流的Fowler-Nordheim结分析,可以确定电子发射机理属于场致电子发射。 相似文献
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Electron field emission measurements from structurized cathodes was reported. Silicon (Si) and boron-doped silicon carbide (SiC:B) had been chosen as a base materials for microtip field emission arrays (FEA). Each of single silicon FEAs has been covered by a thin metal layer using chromium (Cr), titanium (Ti) or platinum (Pt) to reduce the threshold voltage of electron emission. Surface of boron-doped silicon carbide and silicon FEAs have also been modified by deposition of multi-walled carbon nanotubes (MWNT). These efforts let improved the emission currents and bring down the turn-on field down to 1.2 V/μm. In contrast to the above, plain cold cathodes prepared as porous silicon (PS) substrates covered by thin MWNTs have also been measured. 相似文献
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本文提出共面双栅极金刚石薄膜的场发射阵列阴极 (FEAs) ,它由平行的栅极、共面反射极和长条型的金刚石薄膜场发射体组成。采用PIC粒子模拟软件MAGIC模拟这种结构的电子轨迹、相空间图和发射电流 电压等特性 ,并与只有栅极时的情况进行对比 ,表明反射极对电子注有会聚作用 ,能形成层流性良好的电子注 ,该结构可应用于场发射平面显示器等真空微电子器件中 相似文献
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Ki Seo Kim Je Hwang Ryu Chang Seok Lee Jin Jang Kyu Chang Park 《Journal of Materials Science: Materials in Electronics》2009,20(Z1):120-124
Carbon nanotubes (CNT) have been highlighted as possible candidates for field-emission emitters and vacuum nanoelectronic
devices. In this article, we studied the effect of acid treatment of CNTs on field emission from carbon nanotube field emitter
arrays (FEAs), grown using the resist-assisted patterning process (RAP). The emission current densities of as grown CNT-FEAs
and those which were later immersed in hydrofluoric acid (HF) for 20 s, were 19 μA/cm2 and 7.0 mA/cm2, respectively, when measured at an anode field of 9.2 V/μm. Hence, the emission current densities after HF treatment are
300 times larger than those of as grown CNT-FEAs. Also, it was observed that a very stable electron emission current was obtained
after stressing the CNTs with an electric field of 9.2 V/μm for 800 min in dc-mode, where the emission current non-uniformity
was 0.13%. The enhancement in electron emission after HF treatment appears to be due to the effect of fluorine bonding. Also,
the electron emission characteristics and structural improvement of CNT-FEAs after HF treatment are discussed. 相似文献
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CVD金刚石膜的场发射机制 总被引:1,自引:0,他引:1
利用热灯丝化学气相沉积方法在光滑的钼上沉积了金刚石膜,用扫描电子显微镜和Raman谱对金刚石膜进行了分析。结果表明金刚石膜是由许多金刚石晶粒组成,晶粒间界主要是石墨相,并且在膜内有许多缺陷。金刚石膜的场发射结果表明高浓度CH4形成的金刚石膜场发射阈位电场较低浓度CH4形成的金刚石为低。这意味着杂质(如石墨)和缺陷(悬挂键)极大地影响了膜的场发射性能。根据以上结果,提出了一种CVD金刚石膜的场发射机制即膜内的缺陷增强膜内的电场,石墨增大电子的隧穿系数以增强CVD金刚石膜的场发射。 相似文献
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Hsieh TY Wang JL Yang PY Hwang CC Shye DC 《Journal of nanoscience and nanotechnology》2012,12(7):5453-5458
The Al-doped ZnO (AZO) nanostructures field-emission arrays (FEAs) were hydrothermally synthesized on AZO/glass substrate. The samples with Al-dosage of 3 at.% show the morphology as nanowires vertically grown on the substrates and a structure of c-axis elongated single-crystalline wurtzite. The good field-emission (i.e., the large anode current and low fluctuation of 15.9%) can be found by AZO nanostructure FEAs with well-designed Al-dosage (i.e., 3 at.%) because of the vertical nanowires with the less structural defects and superior crystallinity. Moreover, the Full width at half maximum (FWHM) of near band-edge emission (NBE) decreased as the increase of annealing temperature, representing the compensated structural defects during oxygen ambient annealing. After the oxygen annealing at 500 degrees C, the hydrothermal AZO nanostructure FEAs revealed the excellent electrical characteristics (i.e., the larger anode current and uniform distribution of induced fluorescence) and enhanced field-emission stability (i.e., the lowest current fluctuation of 5.97%). 相似文献
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Field emission from nanostructured AlN/GaN films on Si substrate prepared by pulsed laser deposition
Zhao W Wang R Wang F Chen S Wang B Wang H Yan H 《Journal of nanoscience and nanotechnology》2011,11(12):10817-10820
Nanostructured AIN/GaN films with different thickness are synthesized on Si substrates by pulsed laser deposition (PLD). GaN and AIN single-layer films are also deposited for comparison. It is found that the turn-on field of the nanostructured AIN/GaN films is considerably decreased 2 orders of magnitude than that of single-layer films. The improvement of field emission (FE) characteristics is attributed to the quantum structure effects, which supplies a favorable location of electron emission and enhances tunneling ability. We show that by tuning the thickness of AIN/GaN, various FE characteristics can be obtained. It indicates that the optimal thickness of the nanostructured AIN/GaN films exists for their best field emission performance. 相似文献
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Wang XP Liu XX Wang LJ Li HH Mei CY Liu XF Can Y 《Journal of nanoscience and nanotechnology》2012,12(8):6579-6582
A nano-Zno films are deposited on the Mo film/ceramic substrates by using the electron beam vapor deposition technique. Then a hydrogen plasma treated method is used to improve the characteristics of ZnO thin films by microwave plasma chemical vapor deposition system. Effects of process parameters on morphologies and structures of the ZnO thin films are detected and analysed by field emission scanning electron microscopy, X-ray diffraction spectrum and energy dispersive spectrum. The experimental result indicates that the hydrogen plasma treated techniques can essentially reduce the surface resistance and improve the field emission current density of the nano-ZnO thin films. For the hydrogen plasma treated sample, its field emission current density can increased more than three times at 2.2 V/microm electric field condition. 相似文献
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The patterned electron field emission of printed carbon nanotube (PCNT) films using image transfer technology is reported. If we transfer an image to the surface of PCNT films, such as using a stamp, the emission image of PCNT films will be the transferred pattern. Based on many experiments, we are convinced that the essential feature of pattern emission from PCNT films by image transfer technology is the great emission enhancement of the image transferred area and the reduced emission from the raw area. According to the results from field emission scanning electron microcopy (FESEM), we suggest that the connecting CNT bundles protruding from the substrate result in the emission enhancement of the image transferred area. At the same time, the emission current increase causes the external and internal voltage drop to increase which results in a decrease in the emission from the untreated area. Using image transfer technology, a well-resolved emission image of PCNT films could easily be obtained without any post-treatment. 相似文献
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Diamond films of various morphologies and compositions have been deposited on silicon substrates by a plasma-enhanced chemical transport (PECT) process from a solid carbon source. Electron emission efficiency of these diamond films is related to their morphology and composition. The electric field required to excite emission in a boron-doped polycrystalline diamond film ranged between 20 to 50 MV m−1. In an undoped conducting nanocrystalline diamond composite film, the field was as low as 5–11 MV m−1. The cold field electron emission of these films is confirmed from the Fowler-Nordhelm plots of the data. Enhancement of electron emission by band-bending and by the nanocrystalline microstructure are discussed. New diamond emitters made of nanocrystalline boron-doped diamond composite are proposed. 相似文献