共查询到18条相似文献,搜索用时 187 毫秒
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J. Y. Tsai C. W. Chang C. E. Ho Y. L. Lin C. R. Kao 《Journal of Electronic Materials》2006,35(1):65-71
The microstructures of the eutectic Au20Sn (wt.%) solder that developed on the Cu and Ni substrates were studied. The Sn/Au/Ni
sandwich structure (2.5/3.75/2 μm) and the Sn/Au/Ni sandwich structure (1.83/2.74/5.8 μm) were deposited on Si wafers first.
The overall composition of the Au and the Sn layers in these sandwich structures corresponded to the Au20Sn binary eutectic.
The microstructures of the Au20Sn solder on the Cu and Ni substrates could be controlled by using different bonding conditions.
When the bonding condition was 290°C for 2 min, the microstructure of Au20Sn/Cu and Au20Sn/Ni was a two-phase (Au5Sn and AuSn) eutectic microstructure. When the bonding condition was 240°C for 2 min, the AuSn/Au5Sn/Cu and AuSn/Au5Sn/Ni diffusion couples were subjected to aging at 240°C. The thermal stability of Au20Sn/Ni was better than that of Au20Sn/Cu.
Moreover, less Ni was consumed compared to that of Cu. This indicates that Ni is a more effective diffusion barrier material
for the Au20Sn solder. 相似文献
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文章介绍了Sn、Sn-3.0Ag-0.5Cu(SAC)、Sn-0.7Cu(SC)、Sn-9Zn(SZ)、Sn-58Bi(SB)等五种无铅焊锡与金/镍/不锈钢(Au/Ni/SUS304)与铁-42wt%Ni(Alloy42)基材的界面反应。在不锈钢基材方面:与Sn反应仅生成Ni3Sn4相,与SAC反应初期生成Ni3Sn4相。随反应时间增长则生成(Cu,Ni)6Sn5相且剥离界面;另于界面处则有FeSn2相生成。与SC反应则生成层状(Cu,Ni)6Sn5相,随反应延长产生大规模剥离,并在界面生成FeSn2相。仅有Ni5Zn21相生成于SZ/Au//Ni/SUS304系统。SB/Au//Ni/SUS304系统也仅有Ni3Sn4相生成。在Alloy42基材方面:与纯Sn的界面反应仅生成FeSn2相。SAC焊锡与Alloy42基材反应生成(Fe,Ni,Cu)Sn2相,随反应时间延长该相形态变成连续及块状两层结构。在SC/Alloy42反应系统中仅观察到FeSn2相的生成。仅有(Ni,Fe)5Zn21层生成于SZ/Alloy42系统。与SC/Alloy42系统相似,与SB/Alloy42系统只有FeSn2相的生成,并无其他介金属相的生成。 相似文献
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研究了Cu/Sn等温凝固键合技术在MEMS气密性封装中的应用。设计了等温凝固键合多层材料的结构和密封环图形,优化了键合工艺,对影响气密性的因素(如密封环尺寸等)进行了分析。在350°C实现了良好的键合效果,其最大剪切强度达到27.7MPa,漏率~2×10-4Pa·cm3/sHe,完全可以满足美国军方标准(MIL-STD-883E)的要求,验证了Cu/Sn等温凝固键合技术在MEMS气密封装中的适用性。 相似文献
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《固体电子学研究与进展》2020,(2)
通过对共晶锡铅焊球与Ni/NiP UBM层扫描电镜界面微观组织观察和成分分析,研究了Sn-37Pb/Ni和Sn-37Pb/NiPUBM焊点界面反应特性。研究表明芯片侧界面IMC由Ni层到焊料的顺序为:靠近Ni层界面化合物为(Ni,Cu)_3Sn,靠近焊料侧化合物为(Cu,Ni)_6Sn_5;PCB板侧界面IMC包括靠近NiP层的NiSnP化合物和靠近焊料侧的(Cu,Ni)_6Sn_5化合物,NiSnP是由于Ni的扩散形成。PCB板侧NiP镀层中存在微裂纹缺陷,此裂纹缺陷会导致金属间化合物中产生裂纹,从而对焊点力学性能和可靠性产生不良的影响。 相似文献
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采用固相反应法制备了Bi2(Zn1/3Nb2/3)2O7(BZN)微波陶瓷,并借助XRD、SEM及LCR4284测试仪,研究了Sn4+取代Nb5+对BZN陶瓷显微结构和介电性能的影响。结果表明:随着Sn4+替代量的增加,微观形貌中出现棒晶;选取20~80℃,100 kHz时的εr计算,介电常数温度系数由205×10–6/℃逐渐减小到–240×10–6/℃;当替代量x(Sn4+)为0.16时,样品出现介电弛豫现象;随着测试频率的增加,介电弛豫峰向高温移动。 相似文献
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Au/Sn共晶键合技术在MEMS封装中的应用 总被引:1,自引:0,他引:1
研究了Au/Sn共晶圆片键合技术在MEMS气密性封装中的应用。设计了共晶键合多层材料的结构和密封环图形,盖帽层采用Ti/Ni/Au/Sn/Au结构,器件层采用Ti/Ni/Au结构,盖帽层腔体尺寸为4.5 mm×4.5 mm×20μm,Au/Sn环的宽度为700μm,优化了键合工艺,对影响气密性的因素(如组分配比、键合前处理和键合温度等)进行了分析。两层硅片在氮气气氛中靠静态的压力实现紧密接触。在峰值温度为300℃、持续时间为2 min的条件下实现了良好的键合效果,其剪切力平均值达到16.663 kg,漏率小于2×10-3 Pa·cm3/s,满足检验标准(GJB548A)的要求,验证了Au/Sn共晶键合技术在MEMS气密封装中的适用性。 相似文献
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La掺杂对BLT薄膜微观结构与性能的影响 总被引:1,自引:1,他引:0
采用sol-gel工艺低温制备了Si基Bi4–xLaxTi3O12(BLT)铁电薄膜。研究了La掺杂量对薄膜微观结构、介电和铁电性能的影响。结果表明,600~650℃退火处理的BLT薄膜表面平整无裂纹,晶粒均匀,无焦绿石相或其它杂相,薄膜为多晶生长;La掺杂量x在0.5~0.85的BLT薄膜介电与铁电性能优良,其εr和tanδ分别介于284~289和(1.57~1.63)×10–2,4V偏压下薄膜的漏电流密度低于10–8A/cm2,Pr可达(13.0~17.5)×10–6C/cm2,Ec低至(102.5~127.8)×103V/cm。 相似文献
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俄罗斯RD&P Center ORION发展了一种基于平面HgCdTe光电二极管列阵和定制硅集成读出电路的焦平面列阵技术.做在碲镉汞液相外延层上的光伏探测器列阵以及硅读出电路是通过铟丘连接在蓝宝石互连衬底上的.冷却的硅读出电路是用n-MOS工艺制作的.本文描述了一些3μm~5μm和8μm~12μm时间延迟和积分(TDI)扫描红外焦平面线列的一般结构和发展结果,这些焦平面线列的规格分别为4×48、2×96、4×128和2×256.介绍了基于碲镉汞外延层的光伏型列阵的性能.描述了以TDI模式工作的混成焦平面列阵的测试方法及典型的调查结果.在8μm~12μm波长范围内,带四个TDI元件的4×48和4×128焦平面列阵的探测率高于(1~2)×1011cmW-1Hz1/2,带两个TDI元件的2×96和2×256焦平面列阵的探测率高于(7~10)× 1010cmW-1Hz1/2. 相似文献
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研究了利用Cu/Sn对含硅通孔(TSV)结构的多层芯片堆叠键合技术。采用刻蚀和电镀等工艺,制备出含TSV结构的待键合芯片,采用扫描电子显微镜(SEM)对TSV形貌和填充效果进行了分析。研究了Cu/Sn低温键合机理,对其工艺进行了优化,得到键合温度280℃、键合时间30 s、退火温度260℃和退火时间10 min的最佳工艺条件。最后重点分析了多层堆叠Cu/Sn键合技术,采用能谱仪(EDS)分析确定键合层中Cu和Sn的原子数比例。研究了Cu层和Sn层厚度对堆叠键合过程的影响,获得了10层芯片堆叠键合样品。采用拉力测试仪和四探针法分别测试了键合样品的力学和电学性能,同时进行了高温测试和高温高湿测试,结果表明键合质量满足含TSV结构的三维封装要求。 相似文献
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Sang Hyun Park Younghwan Jin Kyunghan Ahn In Chung Chung-Yul Yoo 《Journal of Electronic Materials》2017,46(2):848-855
The structural and electrical characteristics of Ag/Ni bilayer metallization on polycrystalline thermoelectric SnSe were investigated. Two difficulties with thermoelectric SnSe metallization were identified for Ag and Ni single layers: Sn diffusion into the Ag metallization layer and unexpected cracks in the Ni metallization layer. The proposed Ag/Ni bilayer was prepared by hot-pressing, demonstrating successful metallization on the SnSe surface without interfacial cracks or elemental penetration into the metallization layer. Structural analysis revealed that the Ni layer reacts with SnSe, forming several crystalline phases during metallization that are beneficial for reducing contact resistance. Detailed investigation of the Ni/SnSe interface layer confirms columnar Ni-Sn intermetallic phases [(Ni3Sn and Ni3Sn2) and Ni5.63SnSe2] that suppress Sn diffusion into the Ag layer. Electrical specific-contact resistivity (5.32 × 10?4 Ω cm2) of the Ag/Ni bilayer requires further modification for development of high-efficiency polycrystalline SnSe thermoelectric modules. 相似文献
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电镀工艺对多层瓷介电容器介电性能的影响 总被引:1,自引:0,他引:1
用滚镀和静态电镀的实验方法研究了电镀过程对多层瓷介电容器(MLCC)的介电性能的影响。镀镍后,MLCC的电容量略有提高,损耗和温度系数几乎没有变化。镀锡后,MLCC的电容量下降幅度较大,损耗增大,并且随着温度的升高而迅速增加,从而导致电容量变大,进而使电容量温度系数增大。并且高温损耗随着测试频率的提高而降低。将MLCC置于正在电镀的镀镍液和镀锡液中浸泡,发现镀锡液较镀镍液对MLCC有更强的渗入能力和侵蚀能力。 相似文献
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Interfacial microstructure between Sn-3Ag-xBi alloy and Cu substrate with or without electrolytic Ni plating 总被引:1,自引:0,他引:1
Chi-Won Hwang Jung-Goo Lee Katsuaki Suganuma Hirotaro Mori 《Journal of Electronic Materials》2003,32(2):52-62
The microstructure of the interfacial phase of Sn-3Ag-xBi alloy on a Cu substrate with or without electrolytic Ni plating
was evaluated. Bismuth additions into Sn-Ag alloys do not affect interfacial phase formations. Without plating, η-Cu6Sn5/ε-Cu3Sn interfacial phases developed as reaction products in the as-soldered condition. The η-phase Cu6Sn5 with a hexagonal close-packed structure grows about 1-μm scallops. The ε-phase Cu3Sn with an orthorhombic structure forms with small 100-nm grains between η-Cu6Sn5 and Cu. For Ni plating, a Ni3Sn4 layer of monoclinic structure formed as the primary reaction product, and a thin η-Ni3Sn2 layer of hexagonal close-packed structure forms between the Ni3Sn4 and Ni layer. In the Ni layer, Ni-Sn compound particles of nanosize distribute by Sn diffusion into Ni. On the total thickness
of interfacial reaction layers, Sn-3Ag-6Bi joints are thicker by about 0.9 μm for the joint without Ni plating and 0.18 μm
for the joint with Ni plating than Sn-3Ag joints, respectively. The thickening of interfacial reaction layers can affect the
mechanical properties of strength and fatigue resistance. 相似文献