Preparation and electrical properties of ITO thin films by dip-coating process

Indium tin oxide (ITO) thin films were prepared on quartz glass substrates by a dip-coating process. The starting solution was prepared by mixing indium chloride dissolved in acetylacetone and tin chloride dissolved in ethanol. The ITO thin films containing 0 20 mol% SnO₂ were successfully prepared by heat-treatment at above 400 °C. Chemical stability of sol were investigated by using a FTIR spectrometer. The electrical resistivity of the thin films decreased with increasing heat-treatment temperature, that is carrier concentration increased, and mobility decreased with increasing SnO₂ content. The ITO thin films containing 12 mol% SnO₂ showed the minimum resistivity of =1.2 × 10^–3 ( cm). It also showed high carrier concentration of N=1.2 × 10²⁰(cm^–3) and mobility _H=7.0(cm² V^–1 s^–1).     

Electrical and optical properties of indium tin oxide films prepared on plastic substrates by radio frequency magnetron sputtering

The influence of deposition power, thickness and oxygen gas flow rate on electrical and optical properties of indium tin oxide (ITO) films deposited on flexible, transparent substrates, such as polycarbonate (PC) and metallocene cyclo-olefin copolymers (mCOC), at room temperature was studied. The ITO films were prepared by radio frequency magnetron sputtering with the target made by sintering a mixture of 90 wt.% of indium oxide (In₂O₃) and 10 wt.% of tin oxide (SnO₂). The results show that (1) average transmission in the visible range (400-700 nm) was about 85%-90%, and (2) ITO films deposited on glass, PC and mCOC at 100 W without supplying additional oxygen gas had optimum resistivity of 6.35 × 10⁻⁴ Ω-cm, 5.86 × 10⁻⁴ Ω-cm and 6.72 × 10⁻⁴ Ω-cm, respectively. In terms of both electrical and optical properties of indium tin oxide films, the optimum thickness was observed to be 150-300 nm.     

Influence of different process parameters on physical properties of fluorine dopes indium oxide thin films

Fluorine-doped indium oxide films were prepared by the spray pyrolysis technique. The physical properties of these films were investigated with respect to various process parameters, namely variation of dopant concentration (in the solution), deposition temperature (T _s), carrier gas (air) flow rate and the thickness of the film. The best films had a Hall mobility of the order of 28 cm²V^–1 s^–1 and a carrier density of 2.7 × 10²⁰ cm^–3. These films were deposited at T _s=425 °C at an air flow rate of 71 min^–1 for an atomic ratio of fluorine to indium of 72%. The electrical resistivity of these films was of the order of 10^–4 cm and the average transmission in the visible range was found to be 80–90%. The films were polycrystalline, n-type semiconductors with [400] as a preferred orientation. The preferred orientation changes from [400] to [222] depending upon the process parameters.     

Electrical properties of BaSnO3 in substitution of antimony for tin and lanthanum for barium

Polycrystalline materials of BaSn_1–x Sb _x O_3– and Ba_1–y La _y SnO_3– were prepared. Substitutional solubilities of antimony for tin and lanthanum for barium, respectively, in BaSnO₃ were obtained to be x=0.18 for BaSn_1–x Sb _x O_3– and y<0.052 for Ba_1-y La _y SnO_3–. The X-ray photoemission spectroscopy measurements showed the valence of antimony and tin is mixed in our samples of BaSn_1–x Sb _x O_3–. At lower temperature, magnetic susceptibilities of BaSn_1–x Sb _x O_3– and Ba_1–y La _y SnO_3– satisfy the Curie law, indicating the existence of non-interacting localized electrons at the Sn⁴⁺ site, and forming a Sn⁴⁺+e^– state in these systems. By substitution of antimony and lanthanum in BaSnO₃, the conductive properties are semiconductor-like. To explain this conductive behaviour, three types of mechanism were taken into consideration.     

Effect of vacuum annealing on the phase composition of In/SnO/Si, In/SnO2/Si, and Sn/In2O3/Si heterostructures

The chemical interaction between indium and thin SnO and SnO₂ films and between tin and thin In₂O₃ films during vacuum annealing was studied. The metallic films were deposited onto single-crystal silicon substrates by magnetron sputtering, the SnO and SnO₂ films were produced by heat-treating the Sn film in flowing oxygen at 673 and 873 K, respectively, and the In₂O₃ film was produced by heat-treating the In film at 573 K. The results indicate that annealing of the In/SnO/Si and In/SnO₂/Si heterostructures in vacuum (residual pressure of 0.33 × 10^?2 Pa) at 773 K gives rise to the reduction of Sn and oxidation of In, whereas annealing of Sn/In₂O₃/Si causes partial tin substitution for indium in the cubic indium oxide lattice.     

Pyrosol deposition of fluorine-doped tin dioxide thin films

Fluorine-doped tin dioxide (SnO₂F) films were deposited from a tin tetrachloride solution in methanol utilizing a pyrosol deposition process. It is shown from thermodynamic calculations that the atmosphere during deposition is oxygen-rich and also suggested that chlorine and hydrogen chloride, which are produced during the deposition reaction, influence crystal growth. Detailed electrical, optical and structural properties of the material with respect to varying film thickness and substrate temperature are presented and discussed. Resistivity of the films deposited at 450 °C decreased from 6×10^–4 to 2×10^–4 cm, while the mobility increased from 14 to 45 cm²V^–1s^–1, respectively, when the film thickness was varied from 100 to 1650 nm. The carrier concentration was relatively unchanged for film thicknesses higher than 200 nm. Optimized SnO₂F films (600 nm) having a resistivity of 6×10^–4 cm, a carrier mobility of 20 cm²V^–1s^–1, a carrier concentration of 8×10²⁰ cm^–3 and a transmittance in excess of 80% are quite suitable as electrodes for amorphous silicon solar cells.     

Thickness dependence of electrical properties in thin films of undoped indium oxide prepared by ion-beam sputtering

Preparation and electrical characterization of undoped indium oxide films were examined as a function of thickness and annealing. Thin films ranging from 1.1 to 113 nm thickness were deposited on glass substrates by ion-beam sputtering. Low-angle X-ray diffraction analysis in multi-layered films showed the possibility that physically continuous and almost flat films were formed even in the thinnest 1.1 nm films. Room temperature resistivity of as-deposited films decreased sharply by more than five orders of magnitude as the thickness increased from 1.1 to 5.2 nm. The 2.4 nm thick films, in its as-deposited state, showed a gradual resistivity modulation with the change of atmosphere between air and argon gas at room temperature. Annealing at 300° C for 5 h in air increased the resistivity drastically; the room temperature resistivity of 24.3 nm thick films changed from 2.2×10^–3 cm (as-deposited) to higher than 10⁵ cm (annealed).     

Effect of N<Subscript>2</Subscript> gas annealing and SiO<Subscript>2</Subscript> barrier on the optical transmittance and electrical resistivity of a transparent Sb-doped SnO<Subscript>2</Subscript> conducting film

During the fabrication process of transparent conducting thin films of ATO (antimony-doped tin oxide) on a soda lime glass substrate by a sol-gel dip coating method, the effects of the SiO₂ buffer layer formed on the substrate and N₂ annealing treatment were investigated quantitatively. The deposited ATO thin film was identified as a crystalline SnO₂ phase and the film thickness was about 100 nm/layer at a withdrawal speed of 50 mm/min. Optical transmittance and electrical resistivity of the 400 nm-thick ATO thin film that was deposited on SiO₂ buffer layer/soda lime glass and then annealed under nitrogen atmosphere were 84% and 5.0 × 10^–3cm, respectively. The XPS analysis confirmed that a SiO₂ buffer layer inhibited Na ion diffusion from the substrate, preventing the formation of a secondary phase such as Na₂SnO₃ and SnO and increasing Sb ion concentration and ratio of Sb⁵⁺/Sb³⁺ in the film. It was found that N₂ annealing treatment leads to the reduction of Sn⁴⁺ as well as Sb⁵⁺, however the reduction of Sn⁴⁺ is more effective, and consequently results in a decrease in the electrical resistivity to produce excellent electrical properties in the film. © Springer Science + Business Media, Inc.     

Preparation and properties of antimony-doped SnO2 films by thermal decomposition of tin 2-ethylhexanoate

Transparent Sb-doped SnO₂ films were prepared at 600° C on glass substrates by thermal decomposition of tin 2-ethylhexanoate and antimony tributoxide. The films 100 to 300 nm thick, which are composed of fine particles, were very smooth. The films showed no preferred orientation. The minimum resistivity (2.1×10^–2 cm) was attained at a concentration of 8 at% Sb on the substrate precoated with SiO₂. The transmission of these films was about 80% over a wavelength range from 0.4 to 2.0 m.     

Amorphous indium tungsten oxide films prepared by DC magnetron sputtering

Indium-tungsten-oxide (IWO) films were prepared by dc magnetron sputtering at ambient substrate temperature (T_s). Characteristics of the films were compared with those of In₂O₃–SnO₂ (ITO) thin films prepared under the same condition. The sputter-deposited IWO films have entirely amorphous structure with an average transmittance of over 85% in the visible range and exhibit a minimum resistivity of 3.2 × 10^–4cm at W content [W/(In + W)] of 0.57 at.%. An in-situ heating X-ray diffraction measurement have shown that the crystallization temperature of IWO films is higher than those of ITO films (150–160C) and increases with increasing W content. This enabled a smooth amorphous surface of IWO films as compared with a rough surface of partially crystallized ITO films as revealed by an atomic force microscopy. IWO films are useful for transparent electrode of organic light emitting diode and polymer LCDs because of the low resistivity, high transparency and smooth surface obtainable by the conventional dc magnetron sputtering at room temperature.     

Room-temperature synthesis of tin oxide nano-electrodes in aqueous solutions

Tin oxide nano-electrodes were fabricated on fluorine doped tin oxide (FTO) substrates at room temperature. SnO₂ was crystallized from ions in aqueous solutions to cover the substrates uniformly. They were single phase of SnO₂ nano-crystals and about 5–10 nm in size. The surface coatings changed the surface morphology of FTO substrates to increase roughness and surface area. FTO substrates covered with tin oxide had the same transparency as bare FTO substrates in the range from 200 nm to 850 nm.     

Characteristics of sol-gel derived PZT thin films with lead oxide cover layers and lead titanate interlayers

The sol-gel derived PbZr_0.53Ti_0.47O₃ (PZT) films were fabricated on the bare Pt/Ti/SiO₂/Si substrates or the same substrates coated by the PbTiO₃ (PT) interlayers. The post-deposition annealing temperature and time were optimized when the PbO cover layers and PbO vapour-containing atmosphere were compared with each other and adopted as the method to diminish the lead-loss problem during the high-temperature post-deposition annealing. The X-ray diffraction patterns, microstructures, and electrical properties such as relative permittivity, _r, remanent polarization, P _r, and coercive electrical field, E _c, were investigated in relation to the annealing conditions. The PZT films deposited on the bare Pt/Ti/SiO₂/Si substrates under the PbO vapour-containing atmosphere showed better electrical properties. This indicates that the PbO vapour-containing atmosphere may be the better method of lead-loss-prevention to process the lead-containing films rather than the PbO cover layer method. The electrical characteristics of the PZT films, _r=1150, a dissipation factor of 0.039, P _r=26 C cm^–2, and E _c=40.5 kV cm^–1 were measured at 1 kHz. When PZT films were deposited on substrates coated by the PT layers, PZT-PT films with single perovskite phase were derived by post-deposition annealing at 500 °C for 1 h. However, the relative electrical properties are very poor, i.e. E _r=160, P _r=2.0 C cm^–2 and E _c=75 kVcm^–1. The optimum combination for preparing PZT-PT films is a 40 nm PbTiO₃ interlayer and annealing conditions of 6 h at 550 °C in a PbO vapour-containing atmosphere; the derived films exhibit electrical properties of E _r=885, P _r=21.5 C cm^–2 and E _c=64 kV cm^–1. The combination of inserting a PT interlayer and annealing in a PbO vapour-containing atmosphere can prevent the formation of electrical short paths. In this case, nearly pin-hole-free PZT films can be grown on the PT (interlayer) /Pt/Ti/SiO₂/Si substrates. It is believed that it is possible to prepare the PZT films with nano-scale uniformity, reproducible quality, which may be worth considering for commercial applications.     

Deposition of improved optically selective conductive tin oxide films by spray pyrolysis

Antimony-doped SnO₂ films with a resistivity as low as 9×10^–4 cm were prepared by spray pyrolysis. Structural, electrical and optical properties were studied by varying the antimony concentration, film thickness and deposition temperature. About 94% average transmission in the visible region and about 87% infrared reflectance were obtained for antimony-doped SnO₂ films by a systematic optimization of the preparation parameters. As the best combination, an average transmission of 88% in the visible region and an infrared reflectance of 76% was possible for the doped SnO₂ films.     

Interaction of Pb and Sn with Thin Films of Their Oxides on Single-Crystal Silicon

Experimental data are presented on the interactions between Pb and thin SnO and SnO₂ films and between Sn and thin PbO films during vacuum annealing and subsequent heat treatment in flowing oxygen. The Pb and Sn films were deposited by magnetron sputtering onto single-crystal Si substrates; the SnO and SnO₂ films were produced by heat-treating Sn in flowing oxygen at 470 and 870 K, respectively; and the PbO films were obtained by heat-treating Pb films at 520 K. During annealing of Pb/SnO₂/Si heterostructures at 870 K in a vacuum of 0.33 × 10^–2 Pa, Pb reacts with lead oxides to form PbSnO₃, whereas vacuum annealing of Sn/PbO/Si heterostructures leads to the formation of SnO and Pb metal. The lead stannates forming in vacuum persist during subsequent heat treatment in flowing oxygen at atmospheric pressure at temperatures of up to 1120 K.     

A novel solvothermal method to synthesize one-dimensional chains of indium tin oxide nanoparticles

One-dimensional conductive chains of indium tin oxide (ITO) nanoparticles with high specific surface areas of about 65 m² g^− 1 were synthesized from indium, tin acetylacetone complexes using isopropanol as solvent by a novel solvothermal method and post heat-treatment. When isopropanol was replaced with water as solvent, the non-conductive individual In₂SnO₅ nanoparticles were obtained.     

Substrate temperature effects on the tin oxide films prepared by spray pyrolysis

Indium-doped tin oxide films were prepared by the spray pyrolysis technique at different substrate temperatures ranging from 400–525 C. Texture coefficients for (200) and (112) reflections of tetragonal SnO₂ were calculated. The surface morphology of the prepared films was revealed by using scanning electron microscopy. A dendrite structure was observed in the films deposited at a substrate temperature of 525 C. The obtained specific resistances were correlated with those obtained from X-ray diffraction analysis and scanning electron microscopy. A study of the effect of film thickness on the plane of preferred orientation was carried out.     

The high-temperature thermal expansion of BiPbSrCaCuO superconductor and the oxide components (Bi2O3, PbO,CaO, CuO)

The thermal expansion of superconducting Bi_1.6Pb_0.4Sr₂Ca₂Cu₃Ox (BiPbSrCaCuO) and its oxide components Bi₂O₃, PbO, CaO and CuO have been studied by high-temperature dilatometric measurements (30–800°C). The thermal expansion coefficient for the BiPbSrCaCuO superconductor in the range 150–830°C is =6.4×10^–6K^–1. The temperature dependences of L/L of pressed Bi₂O₃ reveals sharp changes of length on heating (T ₁=712°C), and on cooling (T ₂=637°C and T ₃=577°C), caused by the phase transition monoclinic-cubic (T ₁) and by reverse transitions via a metastable phase (T ₂ and T ₃). By thermal expansion measurements of melted Bi₂O₃ it is shown that hysteresis in the forward and the reverse phase transitions may be partly caused by grain boundary effect in pressed Bi₂O₃. The thermal expansion of red PbO reveals a sharp decrease in L/L, on heating (T ₁=490°C), related with the phase transition of tetragonal (red, a=0.3962 nm, c=0.5025 nm)-orthorhombic (yellow, a=0.5489 nm, b=0.4756 nm, c=0.5895 nm). The possible causes of irreversibility of the phase transition in PbO are discussed. In the range 50–740°C the coefficient of thermal expansion of pressed Bi₂O₃ (_m=3.6 × 10^–6 and _c=16.6×10^–6K^–1 for monoclinic and cubic Bi₂O₃ respectively), the melted Bi₂O₃ (_m=7.6×10^–6 and _c=11.5×10^–6K^–1), PbO (_t=9.4×10⁶ and _or=3.3×10^–6K^–1 for tetragonal and orthorhombic PbO respectively), CaO (=6.1×10^–6K^–1) and CuO (=4.3×10^–6K^–1) are presented.     

Characterizations of InzGa1?z As1?x?yN xSbyP-i-N structures grown on GaAs by molecular beam epitaxy

The GaAs-based double-heterojunction P-i-N structures using In_zGa_1–zAs_1–x–yN_xSb_y as the i-layer is investigated for the first time using solid source molecular beam epitaxy. High quality coherent bulk InGaAsN_3.45%Sb (0.5 m) with a lattice-mismatch of 2.6 × 10^–3 can be achieved due to the surfactant properties of antimony, while the bulk InGaAsN_2% at 0.5 m with 1.06× 10^–3 mismatch is fully relaxed. Rapid thermal annealing (RTA) resulted in 25 meV low temperature (LT) photoluminescence (PL) full-width half-maximums (FWHM) for the bulk InGaAsNSb layers. InGaAsNSb experiences 30% less blueshifting with subjected under the same annealing conditions as InGaAsN with similar N content. Room temperature (RT) absorption measurements are in the range of 0.9–1.4 eV. The absorption edge of 1.41 m is achieved for sample D4.     

Electrical conductivity and defect structure of polycrystalline tin dioxide doped with antimony oxide

Electrical conductivity () of tin dioxide doped with antimony has been measured as functions of temperature and oxygen partial pressure (p0_2> ). Variation of electrical conductivity is explained by assuming that the antimony oxide forms a substitutional solid solution and doubly ionized oxygen vacancies are predominant defects. Above –10^–5 atm oxygen partial pressure antimony ions are present predominantly in the pentavalent state in tin dioxide lattice. However, it is converted to the trivalent state below this oxygen partial pressure accompanied by a sudden rise in conductivity.     

Structural and optoelectronic properties of indium doped SnO2 thin films deposited by sol gel technique

Indium doped tin oxide (SnO₂:In) thin films were deposited on glass substrates by sol–gel dip coating technique. X-ray diffraction pattern of SnO₂:In thin films annealed at 500 °C showed tetragonal phase with preferred orientation in T (110) plane. The grain size of tin oxide (SnO₂) in SnO₂:In thin films are found to be 6 nm which makes them suitable for gas sensing applications. AFM studies showed an inhibition of grain growth with increase in indium concentration. The rms roughness value of SnO₂:In thin films are found to 1 % of film thickness which makes them suitable for optoelectronic applications. The film surface revealed a kurtosis values below 3 indicating relatively flat surface which make them favorable for the production of high-quality transparent conducting electrodes for organic light-emitting diodes and flexible displays. X-ray photoelectron spectroscopy gives Sn 3d, In 3d and O 1s spectra on SnO₂:In thin film which revealed the presence of oxygen vacancies in the SnO₂:In thin film. These SnO₂:In films acquire n-type conductivity for 0–3 mol% indium doping concentration and p type for 5 and 7 mol% indium doping concentration in SnO₂ films. An average transmittance of >80 % (in ultra-violet–Vis region) was observed for all the SnO₂:In films he In doped SnO₂ thin films demonstrated the tailoring of band gap values. Photoluminescence spectra of the films exhibited an increase in the emission intensity with increase in indium doping concentration which may be due structural defects or luminescent centers, such as nanocrystals and defects in the SnO₂.