掺杂聚合物蓝绿发光二极管

本文报道了用有机染料８－羟基喹啉铝（Ａｌｑ３分散到聚乙烯基咔唑（ＰＶＫ）中的掺杂聚合物作为有源层制作的蓝绿发光二极管（ＬＥＤ），聚合物发光层用旋转涂敷的方法制备．ＩＴＯ／Ａｌｑ３：ＰＶＫ／Ａｌ器件在正向偏压为６Ｖ时可以看到蓝绿发光，峰值波长为５１０ｎｍ，最大亮度为１６８ｃｄ／ｍ２．     

一种可溶性PPV衍生物的电致发光

在ＰＰＶ芳香环上引入烷氧基获得可溶性ＰＰＶ衍生物,以此为基本材料,制备了ＩＴＯ／ＭＥＭＯ－ＰＰＶ／Ａｌ单层结构的聚合物发光二极管（ＰＬＥＤ）。其电致发光为峰值位于５４８ｎｍ左右的绿色谱带。本文对这一器件的基本光电特性及相关机理作了分析。     

Gaq3有机薄膜电致发光器件

首次报道了采用８－羟基喹啉镓螯合物作为发光层制备有机薄膜电致发光器件，器件的结构为：ＩＴＯ导电玻璃／ＴＰＤ／Ｇａｑ３／Ａｌ。研究了Ｇａｑ３薄膜的光致发光和器件的电致发光机理，同时测量和研究了器件的电流密度－－电压（Ｊ－Ｖ）特性和发光亮度－电压（Ｂ－Ｖ）特性。结果表明器件的电致发光峰值波长为５４０ｎｍ，在２０Ｖ直流电压驱动下的最大发光亮度约２５００ｃｄ／ｍ＾２明显高于上同结构和工艺参数制备的Ａｌｑ３     

掺杂聚合物薄膜黄绿发光二极管

在具有电致发光的有机聚合物薄膜ｐｏｌｙ(２－ｍｅｔｈｙｏｘｙ－５－ｅｔｈｙｌｏｘｙ)－４－ｄｉ－(２－ｍｅｔｈｙｏｘｙ－５－ｏｃｔａｏｘｙ)－ｐｈｅｎｙｌｏｎｅ－ｖｉｎｙｌｅｎｅ(简称 ＭＥＭＯ－ＰＰＶ)中掺入一种高荧光量子效率的染料罗丹明６Ｇ(Ｒ６Ｇ),用旋转涂敷的方法获得了发光层,同时将其作为空穴传输层,以８－羟基＠$铝(８－Ａｌｑ３)作为电子传输层,得到了多层有机发光二极管ＩＴＯ/ＰＰＶ:Ｒ６Ｇ/Ａｌｑ３/Ａｌ．该器件峰值波长为５５０ｎｍ,发黄绿光．研究结果表明:不同掺杂浓度对器件发光光谱产生较大影响;通过掺杂,可显著提高器件的稳定性．在１８Ｖ下,器件的亮度达到３６００ｃｄ/ｍ２,外量子效率达３．２%．     

有机／聚合物双异质结发光二极管

报道了用有机／聚合物薄膜材料制备的双异质结发光二极管。器件结构为：玻璃衬底／ＩＴＯ／ＰＶＫ／ＡｌｑＰＢＤ／Ａｌｑ３／Ａｌ电极。在这种结构器件中，电子和空穴分别从Ａｌ负电极和ＩＴＯ正电极中注入，产在ＰＢＤ及ＰＶＫ中传输注入到Ａｌｑ３发光层中。器件在正向偏压为４Ｖ时有绿色光输出；在正向偏压为１０Ｖ，最大亮度可达３０００ｃｄ／ｍ＾２以上。经光谱测试，电致发光峰值波长为５２３ｎｍ。     

发光层厚度对双层有机EL器件ITO/PPV/Alq3/Al发光特性的影响

制务出一组双层有要ＥＬ器件ＩＴＯ／ＰＰＶ／Ａｌｑ３／Ａｌ，测试并分析了各层厚度不同时器件的光电性能。     

LP-MOCVD制备AlGaInP高亮度橙黄色发光二极管

利用ＬＰ－ＭＯＣＶＤ外延生长ＡｌＧａＩｎＰＤＨ结构橙黄色发光二极管．引入厚层Ａｌ０．７Ｇａ０．３Ａｓ电流扩展层和Ａｌ０．５Ｇａ０．５Ａｓ－ＡｌＡｓ分布布拉格反射器（ＤＢＲ）．２０ｍＡ工作条件下，工作电压１．９Ｖ，发光波长峰值在６０５ｎｍ，峰值半宽为１８．３ｎｍ，管芯平均亮度达到２０ｍｃｄ，最大２９．４ｍｃｄ，透明封装成视角（２θ１／２）１５°的ＬＥＤ灯亮度达到１ｃｄ．     

金属/绝缘层/硅(MIS)隧道二极管的发光机理

金属／绝缘层／硅（ＭＩＳ）隧道发光二极管的发光机理可以归结为表面等离极化激元（ＳＰＰ）与界面粗糙度的耦合．电流－电压特性曲线中６．５Ｖ附近的一个负阻和发射光谱中４７５ｎｍ的峰显示,在硅／二氧化硅界面激发起了与之相应的等离子体振荡．     

移动通信用多线寻址超低功耗STN—LCD

研制了以多线寻址技术（ＭＬＡ）驱动,具有高显示质量的低功耗ＳＴＮ－ＬＣＤ,现在实现了占空因数为１／３３时的３Ｖ电压以及占空因数的１／６５时的５Ｖ电压。这种ＳＴＮ－ＬＣＤ最适合移动通信的应用。     

AlGaInP高亮度发光二极管

分析了ＡｌＧａＩｎＰ材料的特点和ＡｌＧａＩｎＰ高亮度发光二极管发光效率的决定因素,对目前国际上研究比较成熟的一些典型结构进行了综合分析,从理论上指出ＡｌＧａＩｎＰ发光二极管在橙黄波段的发光效率的最终决定因素是光的提取效率,而在黄绿波段是发光二极管的内量子效率。并利用ＬＰ－ＭＯＣＶＤ技术制备了ｃｄ级橙黄高亮度发光二极管,发光波长峰值在６０５ｎｍ,ＦＷＨＭ为１８．３ｎｍ,２０ｍＡ工作电流下,５．０８ｃｍ（２英寸）外延片管芯平均轴向发光强度为２０ｍｃｄ,最大３０ｍｃｄ,平均工作电压１．９Ｖ,透明峰值角度２θ１／２＝１５°时轴向发光强度达到１０００ｍｃｄ。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks