共查询到20条相似文献,搜索用时 13 毫秒
1.
Device characteristics of TiO2 gate dielectrics deposited by a sol-gel method and DC sputtering method on a P-type silicon wafer are reported. Metal-oxide-semiconductor capacitors with Al as the top electrode were fabricated to study the electrical properties of TiO2 films. The films were physically characterized by using X-ray diffraction, a capacitor voltage measurement, scanning electron microscopy, and by spectroscopy ellipsometry. The XRD and DST-TG indicate the presence of an anatase TiO2 phase in the film. Films deposited at higher temperatures showed better crystallinity. The dielectric constant calculated using the capacitance voltage measurement was found to be 18 and 73 for sputtering and sol-gel samples respectively. The refractive indices of the films were found to be 2.16 for sputtering and 2.42 for sol-gel samples. 相似文献
2.
非晶硅薄膜(a-Si)是目前重要的光敏材料,在很多领域得到广泛应用。直流磁控溅射具有工艺简单.沉积温度低等优点,是制备薄膜的一种重要技术。采用直流磁控溅射工艺在玻璃基板上沉积薄膜,并对样品进行了退火处理。研究了沉积速率与溅射功率的关系。结果表明薄膜的沉积速率与溅射功率近似有线性关系。利用X射线衍射(XRD)对薄膜进行了分析鉴定,结果表明溅射的薄膜是非晶硅薄膜。利用扫描电子显微镜(SEM)对非晶硅薄膜的表面形貌进行了观察和分析,与X射线衍射测试的结果一致。所以.利用直流磁控溅射工艺能在常温下能快速制备出良好的非晶硅薄膜。 相似文献
3.
直流反应磁控溅射Al,N共掺方法生长p型ZnO薄膜及其特性 总被引:10,自引:1,他引:9
报道了利用直流反应磁控溅射以Al,N共掺杂技术生长p型ZnO薄膜 .ZnO薄膜在不同衬底温度下沉积于α Al2 O3 (0 0 0 1)衬底上 ,N来自NH3 与O2 的生长气氛 ,Al来自ZnxAl1-x(x =0 9)靶材 .利用XRD ,AFM ,Hall,SIMS和透射光谱对其性能进行了研究 .结果表明 ,ZnO薄膜具有高度c轴择优取向 ,4 5 0℃、6 0 0℃分别实现了p型转变 ,电阻率为 1e2 ~ 1e3 Ω·cm ,载流子浓度为 1e15~ 1e16cm-3 ,迁移率为 0.5~ 1.32cm2 / (V·s) .薄膜中Al原子促进了N原子的掺入 .实验还表明 ,p ZnO薄膜在可见光区域具有很高的透射率 (约为 90 % ) ,室温下光学带宽为 3 2 8eV 相似文献
4.
5.
6.
7.
采用溶胶–凝胶工艺制备了具有高度(100)择优取向的(Pb,La)(Zr,Ti)O3反铁电厚膜(厚约2.2μm)。研究了该反铁电厚膜在不同温度下的电场诱导相变效应和不同电场强度下的温度诱导相变效应。结果表明:(Pb,La)(Zr,Ti)O3反铁电厚膜在室温下处于反铁电态;随着温度升高,厚膜的相变开关电场强度逐渐降低,反铁电态越来越不稳定,当温度高于132℃且电场强度为0 kV/cm时,厚膜处于顺电态;随着外加电场强度的增大,厚膜的AFE(反铁电态)-FE(铁电态)相变温度向低温方向漂移,当电场强度大于164 kV/cm时,厚膜在室温下已处于铁电态。 相似文献
8.
研究了pMOSFET中栅控产生电流(GD)的衬底偏压特性。衬底施加负偏压后,GD电流峰值变小;衬底加正向偏压后,GD电流峰值增大。这归因于衬底偏压VB调制了MOSFET的栅控产生电流中最大产生率,并求出了衬底偏压作用系数为0.3。考虑VB对漏PN结的作用,建立了包含衬底偏压的产生电流模型。基于该模型的深入分析,很好地解释了衬底负偏压比衬底正偏压对产生电流的影响大的实验结果。 相似文献
9.
采用了补氧直流磁控反应溅射工艺制备ITO膜,在不同基片加热温度和补氧流量下获得最低方块电阻值的最佳制备工艺。对制备的ITO薄膜进行了退火热处理,研究不同温度热处理后膜的方块阻值的变化。实验表明,对一定的基片加热温度,ITO膜的方块电阻与溅射气氛中的补氧流量有关,并存在一个最佳补氧的值,在该条件下制备ITO的方块电阻最小,在膜厚为40nm埃时仅有不到100Ω/□。影响溅射沉积ITO透明导电薄膜方阻的,除了溅射沉积时基片的烘烤温度和补氧流量外,还包括后期大气退火热处理的温度。 相似文献
10.
11.
本文研究了HfSiON高K介质在HF基溶液中的湿法腐蚀特性。HF基溶液是最有希望实现HfSiON材料去除的湿法腐蚀溶液,而且通过在HF溶液中加入酸和/或无水乙醇可以提高HF基溶液的选择比。由于退火过程中引起的增密作用,与淀积后的HfSiON相比,经过900°C,30秒退火的HfSiON薄膜在HF基腐蚀溶液中的腐蚀速率显著降低。由于N扩散进入界面层或Si衬底形成在HF基溶液中很难溶解的Si-N键,采用HF基溶液完全去除HfSiON薄膜以后,存在一个不能被腐蚀干净的界面层且被腐蚀的表面未显示疏水特性。在新淀积的高K材料和Si衬底之间存在含有Si-N键的界面层可能因库伦散射而降低载流子迁移率。另外,对于很薄的HfSiON薄膜,在湿法腐蚀前采用N2等离子体处理对提高其湿法腐蚀速率并不是十分有效。 相似文献
12.
13.
14.
The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing,the etch rate of HfSiON annealed at 900℃ for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interracial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case. 相似文献
15.
Xinhong Cheng Dapeng Xu Zhaorui Song Dawei He Yuehui Yu Qingtai Zhao DaShen Shen 《Microelectronic Engineering》2009,86(12):2404-2407
In this paper, HfO2 dielectric films with blocking layers (BL) of Al2O3 were deposited on high resistivity silicon-on-insulator (HRSOI), and the interfacial and electrical properties are reported. High-resolution transmission electron microscopy (HRTEM) indicated that BL could thin the interfacial layer, keep the interface smooth, and retain HfO2 amorphous after annealing. Energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) confirmed that BL weaken Si diffusion and suppressed the further growth of HfSiO. Electrical measurements indicated that there was no hysteresis was observed in capacitance–voltage curves, and Flatband shift and interface state density is 0.05 V and −1.3 × 1012 cm−2, respectively. 相似文献
16.
17.
18.
L. L. Yang Z. Z. Ye L. P. Zhu Y. J. Zeng Y. F. Lu B. H. Zhao 《Journal of Electronic Materials》2007,36(4):498-501
The Na-doped p-type ZnO thin films were prepared by DC reactive magnetron sputtering. Two types of substrates were used for
separate testing purposes: silicon wafers for crystallinity measurements and glass slides for electrical and optical transmittance
measurements. The lowest room-temperature resistivity under the optimal condition was 59.9 Ω cm, with a Hall mobility of 0.406 cm2 V−1s−1 and a carrier concentration of 2.57 × 1017 cm−3. The Na-doped ZnO thin films possessed a good crystallinity with c-axis orientation and a high transmittance (∼85%) in the visible region. The effects of the substrate temperature on the crystallinity
and the electrical properties were discussed. 相似文献
19.
20.
直流磁控反应溅射沉积ITO透明导电膜的研究 总被引:4,自引:0,他引:4
研究了用铟锡合金靶直流磁控反应溅射制备ITO透明导电膜。介绍了膜的制备工艺和膜的特性,讨论了成膜过程和热处理对膜的电阻率和透光率的影响。 相似文献