Low temperature metal oxide film deposition and reaction kinetics in supercritical carbon dioxide

An effective method is developed for low temperature metal oxide deposition through thermal decomposition of metal diketonates in supercritical carbon dioxide (scCO₂) solvent. The rates of Al(acac)₃ (Aluminum acetyl acetonate) and Ga(acac)₃ (Gallium acetyl acetonate) thermal decomposition in scCO₂ to form conformal Al₂O₃ and Ga₂O₃ thin films on planar surfaces were investigated. The thermal decomposition reaction of Al(acac)₃ and Ga(acac)₃ was found to be initialized at  150 °C and 160 °C respectively in scCO₂ solvent, compared to  250 °C and 360 °C in analogous vacuum-based processes. By measuring the temperature dependence of the growth rates of metal oxide thin films, the apparent activation energy for the thermal decomposition of Al(acac)₃ in scCO₂ is found to be 68 ± 6 kJ/mol, in comparison with 80–100 kJ/mol observed for the corresponding vacuum-based thermal decomposition reaction. The enhanced thermal decomposition rate in scCO₂ is ascribed to the high density solvent which effectively reduces the energy of the polar transition states in the reaction pathway. Preliminary results of thin film deposition of other metal oxides including ZrO_x, FeO_x, Co₂O₃, Cr₂O₃, HfO_x from thermal decomposition of metal diketonates or fluorinated diketonates in scCO₂ are also presented.     

Deposition of Sm2O3 doped CeO2 thin films from Ce(DPM)4 and Sm(DPM)3 (DPM=2,2,6,6-tetramethyl-3,5-heptanedionato) by aerosol-assisted metal–organic chemical vapor deposition

Samarium-doped ceria (SDC) thin films were prepared from Sm(DPM)₃ (DPM = 2,2,6,6-tetramethyl-3,5-heptanedionato) and Ce(DPM)₄ using the aerosol-assisted metal–organic chemical vapor deposition method. -Al₂O₃ and NiO-YSZ (YSZ = Y₂O₃-stabilized ZrO₂) disks were chosen as substrates in order to investigate the difference in the growth process on the two substrates. Single cubic structure could be obtained on either -Al₂O₃ or NiO-YSZ substrates at deposition temperatures above 450 °C; the similar structure between YSZ and SDC results in matching growth compared with the deposition on -Al₂O₃ substrate. A typical columnar structure could be obtained at 650 °C on -Al₂O₃ substrate and a more uniform surface was produced on NiO-YSZ substrate at 500 °C. The composition of SDC film deposited at 450 °C is close to that of precursor solution (Sm : Ce = 1 : 4), higher or lower deposition temperature will both lead to sharp deviation from this elemental ratio. The different thermal properties of Sm(DPM)₃ and Ce(DPM)₄ may be the key reason for the variation in composition with the increase of deposition temperature.     

多孔Co3O4纳米纤维用于锂-空气电池高性能正极催化剂

采用静电纺丝技术结合高温煅烧方法,以乙酰丙酮钴(Co(C₅H₇O₂)₃)为前驱物,制备了由Co₃O₄纳米颗粒组成的多孔纳米纤维(Co₃O₄ NFs),其比表面积高达83 m2·g?1,并将制得的多孔Co₃O₄ NFs用于锂-空气电池催化剂。多孔Co₃O₄ NFs为电池反应提供了充足的活性位点及反应物的传输通道,有利于电池反应的顺利进行,使电池的放电容量得到极大地提高。另外,Co₃O₄催化剂的加入提高了电极的催化活性,较大程度降低了电池的过电位。值得注意的是,Co₃O₄催化剂的加入同时调控了锂-空气电池放电产物Li₂O₂的形貌,得到的放电产物Li₂O₂尺寸更小,在电极表面分布更为均匀,该形态的Li₂O₂在充电过程中更容易被分解,有利于提高电池的充电效率,同时电极的体积效应也可得到极大缓解。得益于以上优势,基于多孔Co₃O₄ NFs/炭黑Super P (Co₃O₄ NFs/SP)正极的锂-空气电池的电化学性能得到较大提高,50 mA·g?1电流密度下Co₃O₄ NFs/SP的放电容量高达10600 mA·h·g?1,电池可实现100次的充放电循环。      

Chemical vapor deposition of copper–cobalt binary films

Chemical vapor co-deposition of Cu–Co films has been demonstrated using (1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)Cu(II) [Cu(hfac)₂] [hfac=hexafluoroacetylacetonate] and (acetylacetonate)Co(II) [Co(acac)₂] [acac=acetylacetonate] as precursors. The deposition was performed at the substrate temperature of 270°C in a warm-wall impinging jet type reactor. The precursor Co(acac)₂ was sublimed at 140°C to achieve reasonable precursor delivery rates and avoid decomposition of precursor in the sublimator. Films with varying Cu content from 17 wt.% to 98 wt.% were deposited by subliming Cu(hfac)₂ in the temperature range of 40–100°C with a fixed Co(acac)₂ delivery rate. The morphologies and crystallinities of the binary films were strongly dependent on the film stoichiometry. Overall, this study provides insights into the mechanism of Cu–Co binary film formation by CVD.     

Chemical vapour deposition of praseodymium oxide films on silicon: influence of temperature and oxygen pressure

Metal-organic chemical vapour deposition (MOCVD) of various phases in PrO_x system has been studied in relation with deposition temperature (450–750 °C) and oxygen partial pressure (0.027–100 Pa or 0.2–750 mTorr). Depositions were carried out by pulsed liquid injection MOCVD using Pr(thd)₃ (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) precursor dissolved in toluene or monoglyme. By varying deposition temperature and oxygen partial pressure amorphous films or various crystalline PrO_x phases (Pr₂O₃, Pr₇O₁₂, Pr₆O₁₁) and their mixtures can be grown. The pure crystalline Pr₂O₃ phase grows only in a narrow range of partial oxygen pressure and temperature, while high oxygen pressure (40–100 Pa) always leads to the most stable Pr₆O₁₁ phase. The influence of annealing under vacuum at 750 °C on film phase composition was also studied. Near 90% step coverage conformity was achieved for PrO_x films on structured silicon substrates with aspect ratio 1:10. In air degradation of Pr₂O₃ films with transformation to Pr(OH)₃ was observed in contrast to Pr₆O₁₁ films.     

酵母菌模板辅助合成Co3O4空心微球催化NaBH4水解制氢

预先在酵母菌模板表面沉积Co(OH)₃, 经高温煅烧后成功制得Co₃O₄空心微球, 并作为前驱体催化NaBH₄水解制氢。通过场发射扫描电镜(FE-SEM)和X射线衍射(XRD)进行样品的微观形貌和物相分析。研究结果表明, 当反应液中NaBH₄含量为10wt%时, 模板法制备的Co₃O₄空心微球催化产氢速率高达2140 mL/(min•g) (25℃), 约是同等条件下无模板制备Co₃O₄活性的9倍, 且所制备的Co₃O₄空心微球长期储存性能良好。     

Co3O4纳米线阵列@活性炭纤维复合材料的水热合成及电化学应用

以Co(NO₃)₂·6H₂O为钴源, NH₄F和尿素作为添加剂, 通过水热法在粘胶基活性炭纤维(ACF)的表面生长了Co₃O₄纳米线, 制备了Co₃O₄@ACF复合材料并进行了结构形貌表征及电化学性能测试。结果表明: 针状的Co₃O₄纳米线阵列均匀地垂直生长在活性炭纤维表面, 形成了丰富的介孔结构。通过改变Co(NO₃)₂·6H₂O的用量, 可以获得不同负载量的Co₃O₄@ACF复合材料。当Co₃O₄负载量为47wt%时, Co₃O₄@ACF复合材料在1 A/g电流密度下的比电容高达566.9 F/g, 几乎是纯Co₃O₄的2倍; 在15 A/g的电流密度下, 其比电容仍可达到393.3 F/g, 表现了较好的倍率特性; 经过5000次循环充放电后, 其比电容仍可保持84.2%, 展现了优良的循环稳定性。     

Hydrothermal synthesis, crystal structure and thermal stability of Ba-titanate nanotubes with layered crystal structure

BaTi₃O₇·nH₂O nanotubes have been synthesized through a hydrothermal reaction between Na-rich trititanate nanotubes and Ba(OH)₂ within the pH range 12–8.2. These nanotubes possess the same layered crystal structure of the precursor Na_2−xH_xTi₃O₇·nH₂O. They also keep the morphology of their precursor Na-trititanate nanotubes used in the synthesis, having an external diameter of 20–25 nm. The BaTi₃O₇·nH₂O nanotubes remained fully stable up to 300 °C, while nanotubular form continues to exist up to 600 °C, together with amorphous particles.     

Synthesis, phase transformation and dielectric properties of sol–gel derived Bi2Ti2O7 ceramics

Sol–gel derived Bi₂Ti₂O₇ ceramic powders have been prepared from methoxyethoxides of bismuth and titanium (molar ratio of Ti/Bi = 1.23 and water/alkoxides = 1.31). The Bi₂Ti₂O₇ phase was stable at a low temperature (700 °C), but it then transformed into mixed phases of Bi₄Ti₃O₁₂ and Bi₂Ti₄O₁₁ at 850–1150 °C. The single phase of Bi₂Ti₂O₇ reoccurred at 1200 °C. Dielectric properties and ferroelectric behavior of samples sintered at 1150 and 1200 °C were examined. Under frequency of 1 MHz, samples sintered at 1150 and 1200 °C had a dielectric constant of 101.3 and 104.2, and a loss tangent of 0.0193 and 0.0145, respectively. Only the sample sintered at 1150 °C showed ferroelectric behavior, where remanent polarization is 3.77 μC cm⁻² and coercive field is 24 kV cm⁻¹. Thus, the Bi₂Ti₂O₇ did not exhibit ferroelectricity, but the mixed phase of Bi₄Ti₃O₁₂ and Bi₂Ti₄O₁₁ did.     

Atomic layer deposition of calcium oxide and calcium hafnium oxide films using calcium cyclopentadienyl precursor

Calcium oxide and calcium hafnium oxide thin films were grown by atomic layer deposition on borosilicate glass and silicon substrates in the temperature range of 205–300 °C. The calcium oxide films were grown from novel calcium cyclopentadienyl precursor and water. Calcium oxide films possessed refractive index 1.75–1.80. Calcium oxide films grown without Al₂O₃ capping layer occurred hygroscopic and converted to Ca(OH)₂ after exposure to air. As-deposited CaO films were (200)-oriented. CaO covered with Al₂O₃ capping layers contained relatively low amounts of hydrogen and re-oriented into (111) direction upon annealing at 900 °C. In order to examine the application of CaO in high-permittivity dielectric layers, mixtures of Ca and Hf oxides were grown by alternate CaO and HfO₂ growth cycles at 230 and 300 °C. HfCl₄ was used as a hafnium precursor. When grown at 230 °C, the films were amorphous with equal amounts of Ca and Hf constituents (15 at.%). These films crystallized upon annealing at 750 °C, showing X-ray diffraction peaks characteristic of hafnium-rich phases such as Ca₂Hf₇O₁₆ or Ca₆Hf₁₉O₄₄. At 300 °C, the relative Ca content remained below 8 at.%. The crystallized phase well matched with rhombohedral Ca₂Hf₇O₁₆. The dielectric films grown on Si(100) substrates possessed effective permittivity values in the range of 12.8–14.2.     

Consolidation behavior of L12 phase (Al + 12.5 at.% Cu)3Zr powder with nanocrystalline structure during CIP and subsequent sintering

The mechanically alloyed (Al + 12.5 at.% Cu)₃Zr powders were consolidated by cold isostatic pressing (CIP) and subsequent sintering. Effects of CIP pressure and sintering temperature on the stability of metastable L1₂ phase and nanocrystalline structure were investigated. Before sintering, the powders were CIPed at 138, 207, 276, and 414 MPa. The relative densities of the CIP compacts were not greatly affected by the CIP pressure. However, the L1₂ phase of the specimen CIPed at pressures greater than 276 MPa was partially transformed into D0₂₃. The optimum consolidation conditions for maintaining L1₂ phase and nanocrystalline microstructure were determined to be CIP at 207 MPa and sintering at 800 °C for 1 h for which the grain size was 34.2 nm and the relative density was 93.8%. Full density specimens could be prepared by sintering above 900 °C, however, these specimens consisted of L1₂ and D0₂₃ phases. The grain sizes of all the specimens were confirmed by TEM and XRD, and were found to be less than 40 nm. This is one of the smallest grain sizes ever reported in trialuminide intermetallic compounds.     

Growth of calcium carbonate by the atomic layer chemical vapour deposition technique

Thin films of CaCO₃ (calcite) have been grown with the atomic layer chemical vapour deposition (ALCVD) technique, using Ca(thd)₂ (Hthd=2,2,6,6-tetramethylheptan-3,5-dione), CO₂, and ozone as precursors. Pulse parameters for the ALCVD-type growth are found and self-limiting reaction conditions are established between 200 and 400 °C. Calcium carbonate films have been deposited on soda-lime glass, Si(100), -Al₂O₃(001), -Al₂O₃(012), -SiO₂(001), and MgO(100) substrates. The observed textures were: in-plane oriented films with [100](001)CaCO₃ [100](001)Al₂O₃ and [100](001)CaCO₃[110](001)Al₂O₃ on -Al₂O₃(001), amorphous films on -Al₂O₃(012) when grown at 250 °C, and columnar oriented films on soda-lime glass, Si(001), -SiO₂(001), and MgO(100) substrates with (00l) and (104) parallel to the substrate plane at 250 and 350 °C, respectively. The film topography was studied by atomic force microscopy and AC impedance characteristics were measured on as-deposited films at room temperature. The films were found to be insulating with a dielectric constant (_r) typically approximately 8. Thin films of CaO were obtained by heat treatment of the carbonate films at 670 °C in a CO₂-free atmosphere, but the thermal decomposition led to a significant increase in surface roughness.     

Carburization performance of Incoloy 800HT in CH4/H2 gas mixtures

Carburization performance of Incoloy 800HT has been studied after cyclic and isothermal exposures to CH₄/H₂ carburizing gas mixtures at high temperatures for 500 h. At 800 °C in 2% CH₄/H₂, Incoloy 800HT suffered external oxidation and carburization, the external continuous layer of reaction products consists primarily of Cr₇C₃, Mn_1.5Cr_1.5O₄, and FeCr₂O₄ with Fe(Cr, Al)₂O₄ as a minor phase. At 1100 °C in 10% CH₄/H₂, external carburization did not occur likely due to high carbon dissolution in the alloy substrate at this temperature. A thermodynamic analysis indicated that 1000 °C was an approximate critical temperature, below which the environment should result in mixed oxidizing/carburizing behavior, while above this temperature reducing carburizing behavior should occur. The experimental results approximately agree with the thermodynamic analysis. Metal dusting was not observed under highly carburizing conditions (a_C>1). The size and morphology of Cr-rich phases (or Cr-carbides) are both temperature- and time-dependent, while the external continuity is more temperature-dependent rather than time-dependent.     

Microstructure, crystallinity, and properties of low-pressure MOCVD-grown europium oxide films

A study of growth, structure, and properties of Eu₂O₃ thin films were carried out. Films were grown at 500–600 °C temperature range on Si(1 0 0) and fused quartz from the complex of Eu(acac)₃·Phen by low pressure metalorganic chemical vapor deposition technique which has been rarely used for Eu₂O₃ deposition. These films were polycrystalline. Depending on growth conditions and substrates employed, these films had also possessed a parasitic phase. This phase can be removed by post-deposition annealing in oxidizing ambient. Morphology of the films was characterized by well-packed spherical mounds. Optical measurements exhibited that the bandgap of pure Eu₂O₃ phase was 4.4 eV. High frequency 1 MHz capacitance–voltage (C–V) measurements showed that the dielectric constant of pure Eu₂O₃ film was about 12. Possible effects of cation and oxygen deficiency and parasitic phase on the optical and electrical properties of Eu₂O₃ films have been briefly discussed.     

Effects of Co and Ni addition on reactive diffusion between Sn–3.5Ag solder and Cu during soldering and annealing

The reactive diffusion between Sn–Ag solders and Cu was experimentally examined during soldering and isothermal annealing. Three sorts of solders with compositions of Sn–3.5Ag, Sn–3.5Ag–0.1Ni and Sn–3.5Ag–0.1Co were used for the experiment. Each solder was soldered on a Cu plate at 523 K (250 °C) for 1–60 s in a pure nitrogen gas, and then the solder/Cu diffusion couple was isothermally annealed at 423 K (150 °C) for 168–1008 h. Due to soldering, only Cu₆Sn₅ is formed at the interface in each diffusion couple. On the other hand, Cu₃Sn is produced between Cu₆Sn₅ and Cu owing to the isothermal annealing. The composition of Cu₆Sn₅ is (Cu_0.8Ni_0.2)₆Sn₅ and (Cu_0.93Ni_0.07)₆Sn₅ on the solder and Cu₃Sn sides, respectively, in the (Sn–3.5Ag–0.1Ni)/Cu diffusion couple, and it is (Cu_0.9Co_0.1)₆Sn₅ and (Cu_0.99Co_0.01)₆Sn₅ on the solder and Cu₃Sn sides, respectively, in the (Sn–3.5Ag–0.1Co)/Cu diffusion couple. Different rate-controlling processes were suggested for the (Sn–3.5Ag)/Cu, (Sn–3.5Ag–0.1Ni)/Cu and (Sn–3.5Ag–0.1Co)/Cu diffusion couples. Finally, thermodynamic models were herein adopted to explore influences of the additives on the thermodynamic interaction of the component elements and the driving force for the growth of intermetallics.     

RuO2–TiO2 mixed oxides prepared from the hydrolysis of the metal alkoxides

The hydrolysis of ruthenium alkoxide/titanium tetraethoxide mixtures to gels and powders containing 30–40 mol% Ru was investigated. Basic or neutral conditions led to powders consisting of 2–10 nm diameter crystalline RuO₂ nanoparticles embedded in a matrix of crystalline (anatase) and amorphous TiO₂. Acid hydrolysis conditions gave gels containing smaller, amorphous RuO₂ nanoparticles (1–3 nm). In all samples the RuO₂ nanoparticles tended to clump into aggregates up to 0.5 μm across. Acid or neutral hydrolysis of ruthenium ethoxide gave samples which displayed lower surface Ru:Ti ratios as measured by XPS compared to the bulk (XRF), and also contained more low-valent Ru (as measured by XRF), probably due to incomplete hydrolysis of the precursors. These samples also contained more Ru metal after calcination (XRD). Calcination (450 °C) was accompanied by Ru-promoted combustion of organic material and led to crystalline (anatase) TiO₂ and Ti_xRu_1−xO₂ solid solution (rutile phase).     

超细钙钛矿型LaCoO3的制备、表征及光催化性能研究

以La₂O₃和Co（NO₃）₂·6H₂O为主要原料,用溶胶-凝胶法结合超临界流体干燥技术制备了超细钙钛矿型LaCoO₃。采用TG-DTA、XRD、FT-IR和TEM检测手段进行表征;以15W的紫外灯为光源,用甲基橙溶液的光催化降解测试超细LaCoO₃的催化活性。结果显示,250℃时经超临界流体干燥,可获取直径小于10nm的无定形LaCoO₃球形颗粒;850℃热处理后,可制得粒径介于15～35nm之间的钙钛矿型LaCoO₃类球形颗粒;900℃时La-Co超细粒子中晶相成分为LaCoO₃和La₂O₃,无定形成分为Co₂O₃,稀土镧影响了钴氧化物的晶化;在超细LaCoO₃催化作用下,10mg/L甲基橙溶液500mL完全降解约需4h。     

Characterization of the thorium phosphate-hydrogenphosphate hydrate (TPHPH) and study of its transformation into the thorium phosphate-diphosphate (β-TPD)

The preparation of thorium phosphate-diphosphate (Th₄(PO₄)₄P₂O₇, TPD) was developed through the precipitation of thorium phosphate-hydrogenphosphate hydrate (Th₂(PO₄)₂(HPO₄)·H₂O, TPHPH) at 150–160 °C in closed PTFE container or in autoclaves. From EPMA analyses and SEM observations, the initial precipitate was single phase and multilayered. The behaviour of TPHPH (orthorhombic system with a = 21.368(2) Å, b = 6.695(1) Å and c = 7.023(1) Å) was followed when heating up to 1250 °C. It was first dehydrated leading to the anhydrous thorium phosphate-hydrogenphosphate (TPHP, orthorhombic system with a = 21.229(2) Å, b = 6.661(1) Å and c = 7.031(1) Å at 220 °C) after heating between 180 and 200 °C. This one turned progressively into the new low-temperature variety of TPD (called -TPD, orthorhombic system with a = 21.206(2) Å, b = 6.657(1) Å and c = 7.057(1) Å at 300 °C) correlatively to the condensation of hydrogenphosphate groups into diphosphate entities. These three phases (TPHPH, TPHP and -TPD) exhibit closely related 2D layered structures, therefore different from the 3D structure of the thorium phosphate-diphosphate (high-temperature variety). This latter compound, now called β-TPD, was obtained by heating -TPD above 950 °C. All the techniques involved in this study (XRD, Raman and IR spectroscopy, ¹H and ³¹P NMR) confirmed the successive chemical reactions proposed.     

Synthesis, structure refinement and characterization of tetrahydrated acid gadolinium diphosphate HGdP2O7·4H2O

Synthesis and single crystal structure are reported for a new gadolinium acid diphosphate tetrahydrate HGdP₂O₇·4H₂O. This salt crystallizes in the monoclinic system, space group P2₁/n, with the following unit-cell parameters: a = 6.6137(2) Å, b = 11.4954(4) Å, c = 11.377(4) Å, β = 87.53(2)° and Z = 4. Its crystal structure was refined to R = 0.0333 using 1783 reflections. The corresponding atomic arrangement can be described as an alternation of corrugated layers of monohydrogendiphosphate groups and GdO₈ polyhedra parallel to the () plane. The cohesion between the different diphosphoric groups is provided by strong hydrogen bonding involving the W4 water molecule.

IR and Raman spectra of HGdP₂O₇·4H₂O confirm the existence of the characteristic bands of diphosphate group in 980–700 cm⁻¹ area. The IR spectrum reveals also the characteristic bands of water molecules vibration (3600–3230 cm⁻¹) and acidic hydrogen ones (2340 cm⁻¹). TG and DTA investigations show that the dehydration of this salt occurs between 79 and 900 °C. It decomposes after dehydration into an amorphous phase. Gadolinium diphosphate Gd₄(P₂O₇)₃ was obtained by heating HGdP₂O₇·4H₂O in a static air furnace at 850 °C for 48 h.     

Raman scattering study on ferroelectric (Ba0.32Sr0.68)2Nb2O7 ceramics

Raman scattering technique was applied to examine the Ba-doping effect to the two low temperature phase transitions of Sr₂Nb₂O₇ (SN) in the temperature range from −190 to 600 °C. The line shape of Raman spectra can be well fitted by multidamped harmonic oscillator model. We did not observe any soft mode related to the two low temperature phase transitions corresponding to those of the pure SN. It is correlated to the disappearance of the incommensurate phase in (Ba_0.32Sr_0.68)₂Nb₂O₇ ceramics. However, the temperature dependence behavior of the three low frequency modes indicates another new structural phase transition around 270 °C. It is considered that the reduction of the interlayer interaction caused by partial replacement of Sr-site by Ba-site, whose ionic radius is larger than that of Sr, may be the reason for the disappearance of the incommensurate phase transition in (Ba_0.32Sr_0.68)₂Nb₂O₇ ceramics.