Flexible high capacitance nanocomposite gate insulator for printed organic field-effect transistors

Ceramic-polymer nanocomposite dielectric consisting of an epoxy solution with propylene glycol methyl ether acetate as the solvent and barium titanate nanoparticles with capacitance in excess of 60 pF/mm² was developed and utilized as the gate insulator for organic field-effect transistors (OFETs). The high relative permittivity (κ = 35), bimodal nanocomposite utilized had two different filler particle sizes 200 nm and 1000 nm diameter particles. Bottom gate organic filed-effect transistors were demonstrated using a commercially available printing technology for material deposition. A metal coated plastic film was used as the flexible gate substrate. Solution processable, p-type arylamine-based amorphous organic semiconductor was utilized as the active layer. Fabricated OFETs with the solution processed nanocomposite dielectric had a high field-induced current and a low threshold voltage; these results suggest that the low operating voltage was due to the high capacitance gate insulator. In this paper, we review the characteristics of the nanocomposite dielectric material and discuss the processing and performance of the printed organic devices.     

12-GHz thin-film transistors on transferrable silicon nanomembranes for high-performance flexible electronics

Multigigahertz flexible electronics are attractive and have broad applications. A gate-after-source/drain fabrication process using preselectively doped single-crystal silicon nanomembranes (SiNM) is an effective approach to realizing high device speed. However, further downscaling this approach has become difficult in lithography alignment. In this full paper, a local alignment scheme in combination with more accurate SiNM transfer measures for minimizing alignment errors is reported. By realizing 1 μm channel alignment for the SiNMs on a soft plastic substrate, thin-film transistors with a record speed of 12 GHz maximum oscillation frequency are demonstrated. These results indicate the great potential of properly processed SiNMs for high-performance flexible electronics.     

Synthesis and characteristics of a solution-processable fullerene derivative for n-type organic field-effect transistors

A fullerene molecule, C60TH2-DcB, was prepared by Prato reaction which provides better product yields and purity compared with the reaction for the synthesis of [60]methanofullerene analogues. The C60TH2-DcB is readily soluble in common organic solvents and shows good thermal properties. Field-effect transistors fabricated by solution processing exhibit good n-channel characteristics with a maximum mobility of 1.5 × 10⁻³ cm² V⁻¹ s⁻¹ with a threshold voltage of 11 V and on/off current ratio of 1.0 × 10⁵.     

Dual-gate thin-film transistors, integrated circuits and sensors

The first dual-gate thin-film transistor (DGTFT) was reported in 1981 with CdSe as the semiconductor. Other TFT technologies such as a-Si:H and organic semiconductors have led to additional ways of making DGTFTs. DGTFTs contain a second gate dielectric with a second gate positioned opposite of the first gate. The main advantage is that the threshold voltage can be set as a function of the applied second gate bias. The shift depends on the ratio of the capacitances of the two gate dielectrics. Here we review the fast growing field of DGTFTs. We summarize the reported operational mechanisms, and the application in logic gates and integrated circuits. The second emerging application of DGTFTs is sensitivity enhancement of existing ion-sensitive field-effect transistors (ISFET). The reported sensing mechanism is discussed and an outlook is presented.     

Fabrication of Flexible MoS2 Thin‐Film Transistor Arrays for Practical Gas‐Sensing Applications

By combining two kinds of solution‐processable two‐dimensional materials, a flexible transistor array is fabricated in which MoS₂ thin film is used as the active channel and reduced graphene oxide (rGO) film is used as the drain and source electrodes. The simple device configuration and the 1.5 mm‐long MoS₂ channel ensure highly reproducible device fabrication and operation. This flexible transistor array can be used as a highly sensitive gas sensor with excellent reproducibility. Compared to using rGO thin film as the active channel, this new gas sensor exhibits much higher sensitivity. Moreover, functionalization of the MoS₂ thin film with Pt nanoparticles further increases the sensitivity by up to ～3 times. The successful incorporation of a MoS₂ thin‐film into the electronic sensor promises its potential application in various electronic devices.     

Flexible electronics: 12‐GHz Thin‐Film Transistors on Transferrable Silicon Nanomembranes for High‐Performance Flexible Electronics (Small 22/2010)

Multigigahertz flexible electronics are attractive and have broad applications. A gate‐after‐source/drain fabrication process using preselectively doped single‐crystal silicon nanomembranes (SiNM) is an effective approach to realizing high device speed. However, further downscaling this approach has become difficult in lithography alignment. In this full paper, a local alignment scheme in combination with more accurate SiNM transfer measures for minimizing alignment errors is reported. By realizing 1 μm channel alignment for the SiNMs on a soft plastic substrate, thin‐film transistors with a record speed of 12 GHz maximum oscillation frequency are demonstrated. These results indicate the great potential of properly processed SiNMs for high‐performance flexible electronics.     

Stretchable Thin‐Film Electrodes for Flexible Electronics with High Deformability and Stretchability

Flexible and stretchable electronics represent today's cutting‐edge electronic technologies. As the most‐fundamental component of electronics, the thin‐film electrode remains the research frontier due to its key role in the successful development of flexible and stretchable electronic devices. Stretchability, however, is generally more challenging to achieve than flexibility. Stretchable electronic devices demand, above all else, that the thin‐film electrodes have the capacity to absorb a large level of strain (>>1%) without obvious changes in their electrical performance. This article reviews the progress in strategies for obtaining highly stretchable thin‐film electrodes. Applications of stretchable thin‐film electrodes fabricated via these strategies are described. Some perspectives and challenges in this field are also put forward.