Thermoelectric crystals Bi2Te2.88Se0.12 undoped and doped by CdCl2 or CdBr2 impurities, fabricated and characterized by XRD and Hall effect

Empirical studies on the fabrication of thermoelectric element Bi₂Te_2.88Se_0.12 undoped and doped by 0.08 wt.% CdCl₂ or CdBr₂ have been carried out. Zone melting method was employed to crystallize the solid solutions of the compounds. Structural characteristics of the grown crystals were examined by XRD technique. Measurements of thermoelectric parameters, such as electrical conductivity and Seebeck coefficient, showed a continuous deviation of the composition along the crystal growth direction. Effects of an impurity as a dopant on thermoelectric parameters were studied. Finally, Hall effect system was used to measure free carrier concentration and their mobility at 300 K. Results showed a significant increment on α²σ, due to dopant addition.     

Preparation and electrical properties of Ca5Si3 and Sr5Si3 powders

Single phase Ca₅Si₃ and Sr₅Si₃ powders were prepared, and their electric and thermoelectric properties were investigated. The Ca₅Si₃ and Sr₅Si₃ powders are synthesized by exposure of the Si powders to Ca and Sr fluxes, respectively. It is found that both silicides show a p-type conduction and semiconductor-like behavior. The electronic band structures of the silicides are calculated using the first-principles total-energy calculation program in pseudopotential schemes with plane-wave basis functions. The calculated result predicts the possibility of a semiconductor-like property with a sharp pseudogap at the Fermi level for Ca₅Si₃, as experimentally obtained. The silicide would be expected to be a new semiconductor-like conducting material.     

Structural features of ball-milled nanostructured K2Bi8Se13 thermoelectric material

In this work, K₂Bi₈Se₁₃ material was ball-milled in order to develop nanostructures through the modification of structural features. Structural changes during ball-milling were followed by powder X-ray diffraction measurements, Scanning Electron Microscope images and High Resolution and conventional Transmission Electron Microscopy studies. Powder X-ray diffraction patterns presented a significant broadening in the peak patterns with the increase of the ball-milling time that was attributed to the formation of nanocrystalline as well as amorphous material. TEM studies showed the formation of K₂Bi₈Se₁₃ nanostructured material consisting of nanocrystals that were surrounded by an amorphous matrix. Preliminary measurements of thermoelectric properties have shown that Seebeck coefficient is increased in ball-milled samples where as thermal conductivity is decreased. Sintering process that was applied on the ball-milled material leads to its recrystallization and the growth of grains.     

Electrodeposition of As2Se3 thin films

Semiconducting As₂Se₃ thin films have been prepared from an aqueous bath at room temperature onto stainless steel and fluorine-doped tin oxide (F.T.O.)-coated glass substrates using an electrodeposition technique. It has been found that As₂O₃ and SeO₂ in the volumetric proportion as 4:6 and their equimolar solutions of 0.075 M concentration forms good quality films of As₂Se₃. The films are annealed in a nitrogen atmosphere at temperature of 200 °C for 2 h. The films are characterised by scanning electron microscopy, X-ray diffraction and optical absorption techniques. Studies reveal that asdeposited and annealed thin films are polycrystalline in nature. The optical band gap has been found to be 2.15 eV for the above-mentioned composition and concentration of the film.     

Microstructure and thermoelectric properties of Sn-doped Bi2Te2.7Se0.3 thin films deposited by flash evaporation method

(Bi_1 − xSn_x)₂Te_2.7Se_0.3 thermoelectric thin films with thickness of 800 nm have been deposited on glass substrates by flash evaporation method at 473 K. The structures, morphology of the thin films were analyzed by X-ray diffraction and field emission scanning electron microscopy respectively. Effects of Sn-doping concentration on thermoelectric properties of the annealed thin films were investigated by room-temperature measurement of Seebeck coefficient and electrical resistivity. The thermoelectric power factor was enhanced to 12.8 μW/cmK² (x = 0.003). From x = 0.004 to 0.01 Sn doping concentration, the Seebeck coefficients are positive and show p-type conduction. The Seebeck coefficient and electrical resistivity gradually decrease with increasing Sn doping concentration.     

Thermoelectric properties of Zn4Sb3 prepared by hot pressing

Polycrystalline specimens of the thermoelectric material Zn₄Sb₃ were prepared by the hot-pressing method at various temperatures and pressures and their thermoelectric properties were evaluated in a temperature range from 298 K to 673 K. A single phase of Zn₄Sb₃ was obtained in the samples prepared at 673 K with a pressure above 150 MPa, whereas ZnSb was placed in the Zn₄Sb₃ matrix for the samples prepared at 100 MPa. The electrical transport properties of the single phase compound showed p-type conduction and metallic transport behavior based on the temperature dependence. The sample produced at 673 K under a pressure of 200 MPa exhibited the highest ZT value of 1.36 at 673 K. This study suggests that the dense and single-phase Zn₄Sb₃ compound is a route to achieve a high thermoelectric performance.     

Thermoelectric properties of the tetradymite-type Bi2Te2S-Sb2Te2S solid solution

The thermoelectric properties of the tetradymite-type Bi_2−xSb_xTe₂S solid solution (0 ≤ x ≤ 2) are reported for the temperature range 5-300 K. The properties of non-stoichiometric, Cl and Sn doped n- and p-type variants are reported as well. The Seebeck coefficients for these materials range from −170 to +270 μV K⁻¹ while the resistivities range from those of semimetals, 2 mΩ cm, to semiconductors, >1000 mΩ cm. Thermal conductivities were low for most compositions, typically 1.5 W m⁻¹ K⁻¹. Nominally undoped Bi₂Te₂S shows the highest thermoelectric efficiency amongst the tested materials with a ZT = 0.26 at 300 K that decreased to 0.04 at 100 K. The crystal structure of Sb₂Te₂S, a novel tetradymite-type material, is also reported.     

Structural and impedance properties of KBa2V5O15 ceramics

The polycrystalline sample of KBa₂V₅O₁₅ ceramics was prepared by a mixed oxide method at low temperature (i.e., at 560 °C). The formation of the compound was confirmed using an X-ray diffraction technique at room temperature. Scanning electron micrograph of the material showed uniform grain distribution on the surface of the sample. Detailed studies of dielectric properties of the compound as a function of temperature at different frequencies suggest that the compound has a dielectric anomaly of ferroelectric to paraelectric type at 323 °C, and exhibits diffuse phase transition. Electrical properties of the material were analyzed using a complex impedance technique. The Nyquists plot showed the presence of both grain (>10³ Hz) and the grain boundary (<10³ Hz) effects in the material. Studies of electrical conductivity over a wide temperature range suggest that the compound exhibits the negative temperature coefficient of resistance behavior. The ac conductivity spectrum was found to obey Jonscher's universal power law.     

Structural, electrical and anisotropic properties of Tl4Se3S chain crystals

The structure, the anisotropy effect on the current transport mechanism and the space charge limited current in Tl₄Se₃S chain crystals have been studied by means of X-ray diffraction, electrical conductivity measurements along and perpendicular to the crystal's c-axis and the current voltage characteristics. The temperature-dependent electrical conductivity analysis in the region of 150–400 K, revealed the domination of the thermionic emission of charge carriers over the chain boundaries above 210 and 270 K along and perpendicular to the c-axis, respectively. Below these temperatures, the variable range hopping is dominant. At a consistent temperature range, the thermionic emission analysis results in conductivity activation energies of 280 and 182 meV, along and perpendicular to the c-axis, respectively. Likewise, the hopping parameters are altered significantly by the conductivity anisotropy. The current–voltage characteristics revealed the existence of hole trapping state being located at 350 meV above the valence band of the crystal.     

Single step synthesis of chalcogenide nanoparticles Cu2ZnSnS4, Cu2FeSnS4 by thermal decomposition of metal precursors

Cu₂ZnSnS₄ (CZTS) and Cu₂FeSnS₄ (CFTS) nanoparticles were synthesized by thermal decomposition of metal precursors. Dispersion of the precursors in the solvent prior to reaction significantly lowered the temperature and time required for the reaction. Extensive characterization of the synthesized nanoparticles was done. Materials characteristics of the synthesized nanoparticles such as elemental composition, band gap and morphology were found to be similar to the nanoparticles prepared by conventional synthesis techniques.     

Preparation of hexagonal WO3 from hexagonal ammonium tungsten bronze for sensing NH3

Hexagonal tungsten oxide (h-WO₃) was prepared by annealing hexagonal ammonium tungsten bronze, (NH₄)_0.07(NH₃)_0.04(H₂O)_0.09WO_2.95. The structure, composition and morphology of h-WO₃ were studied by XRD, XPS, Raman, ¹H MAS (magic angle spinning) NMR, scanning electron microscopy (SEM), and BET-N₂ specific surface area measurement, while its thermal stability was investigated by in situ XRD. The h-WO₃ sample was built up by 50-100 nm particles, had an average specific surface area of 8.3 m²/g and was thermally stable up to 450 °C. Gas sensing tests showed that h-WO₃ was sensitive to various levels (10-50 ppm) of NH₃, with the shortest response and recovery times (1.3 and 3.8 min, respectively) to 50 ppm NH₃. To this NH₃ concentration, the sensor had significantly higher sensitivity than h-WO₃ samples prepared by wet chemical methods.     

Microwave dielectric properties and microstructures of the 11Li2O-3Nb2O5-12TiO2 ceramics with B2O3 addition

The effects of B₂O₃ addition, as a sintering agent, on the sintering behavior, microstructure and microwave dielectric properties of the 11Li₂O-3Nb₂O₅-12TiO₂ (LNT) ceramics have been investigated. With the low-level doping of B₂O₃ (≤2 wt.%), the sintering temperature of the LNT ceramic could be effectively reduced to 900 °C. The B₂O₃-doped LNT ceramics are also composed of Li₂TiO₃ss and “M-phase” phases. No other phase could be observed in the 0.5-2 wt.% B₂O₃-doped ceramics sintered at 840-920 °C. The addition of B₂O₃ induced no obvious degradation in the microwave dielectric properties but increased the τ_f values. Typically, the 0.5 wt.% B₂O₃-doped ceramics sintered at 900 °C have better microwave dielectric properties of ?_r = 49.2, Q × f = 8839 GHz, τ_f = 57.6 ppm/°C, which suggest that the ceramics could be applied in multilayer microwave devices requiring low sintering temperatures.     

Hydrothermal synthesis and thermoelectric properties of nanostructured Bi0.5Sb1.5Te3 compounds

Single-phase Bi_0.5Sb_1.5Te₃ compounds have been prepared by hydrothermal synthesis at 150 °C for 24 h using SbCl₃, BiCl₃ and tellurium powder as precursors. X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) have been applied to analyze the phase distributions, microstructures and grain sizes of the as-grown Bi_0.5Sb_1.5Te₃ products. It is found that the hydrothermally synthesized Bi_0.5Sb_1.5Te₃ nanopowders have a morphology dominated by irregular hexagonal sheets due to the anisotropic growth of the crystals. The Bi_0.5Sb_1.5Te₃ nanosheets are parallelly stacked in certain direction to form sheet-agglomerates attribute to the temperature gradients in the solution.     

Optical, electrical and thermal studies on (As2Se3)3−x(As2Te3)x glasses

Optical properties and conductivity of glassy (As₂Se₃)_3−x(As₂Te₃)_x were studied for 0 ≤ x ≤ 3. The films of the above mentioned compound were prepared by thermal evaporation with thickness of about 250 nm. The optical-absorption edge is described and calculated using the non-direct transition model and the optical band gap is found to be in the range of 0.92 to 1.84 eV. While, the width of the band gap tail exhibits opposite behaviour and is found to be in the range of 0.157 to 0.061 eV, this behaviour is believed to be associated with cohesive energy and average coordination number. The conductivity measurement on the thin films is reported in the temperature range from 280 to 190 K. The conduction that occurs in this low-temperature range is due to variable range hopping in the band tails of localized states, which is in reasonable agreement with Mott's condition of variable range hopping conduction. Some parameters such as coordination number, molar volume and theoretical glass transition temperature were calculated and discussed in the light of the topological bonding structure.     

Influence of substrate temperature on structural,optical, and electrical properties of flash evaporated CuIn0.81Al0.19Se2 thin films

Chalcopyrite copper indium aluminum diselenide (CuIn_0.81Al_0.19Se₂) compound is prepared by direct reaction of high purity elemental copper, indium, aluminum and selenium in their stoichiometric proportion. Structural and compositional characterizations of pulverized material confirm the formation of a single phase, polycrystalline nature. CuInAlSe₂ (CIAS) thin films are deposited on organically cleaned soda lime glass substrates using flash evaporation technique by varying the substrate temperatures in the range from 423 K to 573 K. Influence of substrate temperature observed by X-ray diffraction (XRD), scanning electron microscope (SEM), optical and electrical measurement. CIAS Films grown at different substrate temperatures are polycrystalline in nature, exhibiting a chalcopyrite structure with lattice parameters a = ∼0.576 nm and c = ∼1.151 nm. The crystallinity in the films increases with increasing substrate temperature up to 473 K, and tend to degrade at higher substrate temperatures. Optical band gap is in the range of 1.20 eV–1.38 eV and the absorption coefficient is close to 10⁵ cm⁻¹. Electrical characterization reveals p-type conductivity and the structural, morphological and optical properties indicate potential use of CIAS thin films as an absorber layer for thin film solar cell applications.     

Electrical properties of Pb(Mg1/3Nb2/3)O3-PbTiO3 ceramics modified with WO3

Ferroelectrics 0.67Pb (Mg_1/3Nb_2/3)O₃-0.33PbTiO₃ (PMN-PT) + x mol% WO₃ (x=0.1, 0.5, 1, 2) were prepared by columbite precursor method. Electrical properties of WO₃-modified ferroelectrics were investigated. X-ray diffraction (XRD) was used to identify crystal structure, and pyrochlore phase were observed in 0.67Pb (Mg_1/3Nb_2/3)O₃-0.33PbTiO₃+2 mol% WO₃. Dielectric peak temperature decreased with WO₃ doping, indicating that W⁶⁺ incorporated into PMN-PT lattice. Lattice constant, pyrochlore phase and grain size contribute to the variation of K_max. Both piezoelectric constant (d₃₃) and electromechanical coupling factors (k_p) were enhanced by doping 0.1 mol% WO₃, which results from the introduction of “soft” characteristics into PMN-PT, while further WO₃ addition was detrimental. We consider that the two factors, introduction of “soft” characteristics and the formation of pyrochlore phase, appear to act together to cause the variation of piezoelectric properties of 0.67PMN-0.33PT ceramics doping with WO₃.     

Effect of tellurium doping on the thermoelectric properties of CoSb3

Polycrystalline Te-doped CoSb₃ materials with various Te content have been obtained. The scanning microscope with the electron-probe microanalysis apparatus (EPMA) and XRD technique were used to investigate microstructures and to carry out the phase analysis. The Rietveld refinement method was used for refining structure parameters and for examining tellurium distribution in the CoSb₃ structure. Thermoelectric properties have been investigated by means of the Seebeck coefficient, thermal, and electrical conductivity measurements. Optimal contents of Te for maximum figure of merit ZT have been determined.     

Structural, electrical and optical properties of TiO2-WO3 polycrystalline ceramics

Mixed oxides from the TiO₂-WO₃ system were prepared as polycrystalline materials. Their phase composition and electrical conductivity were investigated using X-ray diffraction (XRD) and dc electrical measurements. The energy gap, evaluated on the basis of optical measurements, was presented as a function of W concentration. The influence of chemical composition on structural, semiconducting and optical properties of the TiO₂-WO₃ polycrystalline ceramics was discussed.     

Preparation, characterization, and gas-sensing properties of Pd-doped In2O3 nanofibers

Pure and Pd-doped In₂O₃ nanofibers are synthesized via a simple electrospinning method and characterized by scanning electron microscopy and X-ray diffraction. Comparing with pure In₂O₃ nanofibers, Pd-doped In₂O₃ nanofibers exhibit much higher sensitivity to ethanol at 200 °C. The sensor fabricated from Pd-doped In₂O₃ nanofibers can detect ethanol down to 1 ppm (the corresponding sensitivity is 4) with good selectivity, and the response and recovery times are 1 and 10 s, respectively. The sensing mechanism and the effect of Pd doping are discussed. The results indicate that the Pd-doped In₂O₃ nanofibers can be used to fabricate high performance ethanol sensors.