Study on properties of BaxSmyTi7O20 ceramics with CaO-SiO2-B2O3 glass

The effect of CaO-SiO₂-B₂O₃ (CSB) glass addition on the sintering temperature and dielectric properties of Ba_xSm_yTi₇O₂₀ ceramics has been investigated using X-ray diffraction, scanning electron microscopy and differential thermal analysis. The CSB glass starts to melt at about 970 °C, and a small amount of CSB glass addition to Ba_xSm_yTi₇O₂₀ ceramics can greatly decrease the sintering temperature from about 1350 to about 1260 °C, which is attributed to the formation of liquid phase. It is found that the dielectric properties of Ba_xSm_yTi₇O₂₀ ceramics are dependent on the amount of CSB glass and the microstructures of sintered samples. The product with 5 wt% CSB glass sintered at 1260 °C is optimal in these samples based on the microstructure and the properties of sintering product, when the major phases of this material are BaSm₂Ti₄O₁₂ and BaTi₄O₉. The material possesses excellent dielectric properties: ?_r = 61, tan δ = 1.5 × 10⁻⁴ at 10 GHz, temperature coefficient of dielectric constant is −75 × 10⁻⁶ °C⁻¹.     

Processing, dielectric properties and impedance characteristics of Na0.5Bi0.5Cu3Ti4O12 ceramics

Na_0.5Bi_0.5Cu₃Ti₄O₁₂ (NBCTO) ceramics were prepared by conventional solid-state reaction method. The phase structure, microstructure and dielectric properties of NBCTO ceramics sintered at various temperatures with different soaking time were investigated. Pure NBCTO phase could be obtained with increasing the temperature and prolonging the soaking time. High dielectric permittivity (13,495) and low dielectric loss (0.031) could be obtained when the ceramics were sintered at 1000 °C for 7.5 h. The ceramics sintered at 1000 °C for 7.5 h also showed good temperature stability (−4.00 to −0.69%) over a large temperature range from −50 to 150 °C. Complex impedances results revealed that the grain was semiconducting and the grain boundaries was insulating. The grain resistance (R_g) was 12.10 Ω cm and the grain boundary resistance (R_gb) was 2.009 × 10⁵ Ω cm when the ceramics were sintered at 1000 °C for 7.5 h.     

Study on properties of CaO-SiO2-B2O3 system glass-ceramic

Low temperature co-fired ceramic (LTCC) is prepared by sintering a glass selected from CaO-SiO₂-B₂O₃ system, and its sintered bodies are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). It is found that the optimal sintering temperature for this glass-ceramic is 820 °C for 15 min, and the major phases of this material are CaSiO₃, CaB₂O₄ and SiO₂. The glass-ceramic possesses excellent dielectric properties: ?_r = 6.5, tan δ < 2 × 10⁻³ at 10 MHz, temperature coefficient of dielectric constant about −51 × 10⁻⁶ °C⁻¹ and coefficient of thermal expansion about 8 × 10⁻⁶ °C⁻¹ at 20-400 °C. Thus, this material is supposed to be suitable for the tape casting process and be compatible with Ag electrode, which could be used as the LTCC materials for the application in wireless communications.     

Phase evolution and dielectric properties of MgTi2O5 ceramic sintered with lithium borosilicate glass

Phase evolution, densification, and dielectric properties of MgTi₂O₅ dielectric ceramic, sintered with lithium borosilicate (LBS) glass, were studied. Reaction between LBS glass and MgTi₂O₅ was significant in forming secondary phases such as TiO₂ and (Mg,Ti)₂(BO₃)O. The glass addition was not necessarily deleterious to the dielectric properties due to the formation of TiO₂: permittivity increased and temperature coefficient of resonance frequency could be tuned to zero with the addition of LBS glass, although the inevitable glass-induced decrease of quality factor was not retarded by the formation of TiO₂. The sintered specimen with 10 wt% LBS fired at 950 °C for 2 h showed permittivity of 19.3, quality factor of 6800 GHz, and τ_f of −16 ppm/°C.     

Effect of the sintering temperature on the properties of Ce0.85La0.10Ca0.05O2−δ electrolyte material

Rare earth and alkaline earth co-doped Ce_0.85La_0.10Ca_0.05O_2−δ electrolyte material with the powder obtained by solid-state reaction method was sintered at 1300, 1400, 1500 and 1600 °C respectively. The results showed that the ionic conductivity of the sample sintered at 1400 °C was slightly lower compared to that sintered at 1500 °C in the temperature range of 300-550 °C, while the sample sintered at 1400 °C showed the highest ionic conductivity in all the samples above 550 °C. The ionic conductivity of ∼0.021 S/cm at 600 °C and the relative density of 98.2% were observed for the sample sintered at 1400 °C. In addition, the highest flexural strength with 145 MPa was also obtained for the sample sintered at 1400 °C. It suggested that the sintering temperature for Ce_0.85La_0.10Ca_0.05O_2−δ electrolyte may be reduced to as low as 1400 °C with desired properties.     

Dielectric and pyroelectric anisotropy in melt-quenched BaBi2(Nb1 − xVx)2O9 ceramics

The (0 0 l) textured BaBi₂(Nb_1 − xV_x)₂O₉ (where x = 0, 0.03, 0.07, 0.1 and 0.13) ceramics were fabricated via the conventional melt-quenching technique followed by high temperature heat-treatment (800-1000 °C range). The influence of vanadium content and sintering temperature on the texture development and relative density were investigated. The samples corresponding to the composition x = 0.1 sintered at 1000 °C for 10 h exhibited the maximum orientation of about 67%. The Scanning electron microscopic studies revealed the presence of platy grains having the a-b planes perpendicular the pressing axis. The dielectric constant and the pyroelectric co-efficient values in the direction perpendicular to the pressing axis were higher. The anisotropy in the dielectric constant is about 100 (at 100 kHz) at the dielectric maximum temperature and anisotropy in the pyroelectric co-efficient is about 50 μC cm⁻² °C⁻¹ in the vicinity of pyroelectric anomaly for the sample corresponding to the composition x = 0.1 sintered at 1000 °C. Higher values of the dielectric loss and electrical conductivity were observed in the direction perpendicular to the pressing axis which is attributed to the high oxygen ion conduction in the a-b planes.     

Synthesis and characterization of xMgO–1.5Al2O3–5SiO2 (x = 2.6–3.0) system using mainly talc and kaolin through the glass route

Three non-stoichiometric cordierite with compositions of xMgO–1.5Al₂O₃–5SiO₂ (x = 2.6–3.0 mol) were synthesized using mainly talc and kaolin through the glass route. The densification and crystallization behaviors of these glass powders were investigated using DTA, dilatometer, and XRD. Samples were then heat treated at 900 °C for 2 h and further analyzed using XRD, CTE, FESEM, density and porosity tests, and also dielectric test to further investigate their properties. The 2.8MgO·1.5Al₂O₃·5SiO₂ glass composition fully densified and crystallized into high purity α-cordierite at the heat treatment temperature. It exhibited lower CTE and dielectric constant compared to other composition, making it suitable for high frequency applications. Other formulations which contain multi crystalline phases require much higher temperatures for densification. The CTE value depends on the type of crystalline phase which exist in the sample, while the dielectric constant decreased with increasing MgO amounts in the sample compositions.     

Preparation and properties of negative thermal expansion Zr2WP2O12 ceramics

Using solid-state reaction method, Zr₂WP₂O₁₂ powder was synthesized for this study. The optimum heating condition was 1200 °C for 4 h. The obtained powder was compacted and sintered. The relative density of the Zr₂WP₂O₁₂ ceramics with no sintering additive was 60%. That of samples sintered with more than 0.5 mass% MgO was about 97%. The average grain size (D₅₀), as estimated from the polished surface of a sample sintered at 1200 °C for 4 h was about 1 μm. The obtained ceramics showed a negative thermal expansion coefficient of about −3.4 × 10⁻⁶ °C⁻¹. Young's modulus, Poisson's ratio, three-point bending strength, Vickers microhardness, and fracture toughness of the obtained ceramics were, respectively, 74 GPa, 0.25, 113 ± 13 MPa, 4.4 GPa and 2.3 MPa m^1/2.     

Influence of Cr deficiency on sintering character and properties of SOFC interconnect material La0.7Ca0.3Cr1−xO3−δ

The SOFC interconnect materials La_0.7Ca_0.3Cr_1−xO_3−δ (x = 0-0.09) were prepared using an auto-ignition process and characterized. XRD analysis indicated that all the samples displayed a pure perovskite phase after sintered at 1400 °C for 4 h. The relative density increased from 67% (x = 0) to 95.8% (x = 0.02) and reached to about 97% (x > 0.02), as sintered at 1400 °C for 4 h. The electrical conductivity in air dramatically increased and then lowered slowly with x values. The sample with 0.03 Cr deficiency got a maximum conductivity of 61.7 S cm⁻¹ at 850 °C in air, which is about three times as high as that of the sample with no Cr deficiency (20.6 S cm⁻¹). The sample with 0.06 Cr deficiency exhibited the highest electrical conductivity of 3.9 S cm⁻¹ at 850 °C in pure H₂. The thermal expansion coefficient (TEC) were below 11.8 × 10⁻⁶ K⁻¹ for samples of x = 0.02-0.09, that was of well compatibility with other components in SOFCs. Results indicate that the materials with 0.02-0.06 Cr deficiency have high properties and are much suitable for SOFC interconnect.     

Improved high-Q microwave dielectric resonator using CuO-doped MgNb2O6 ceramics

The microwave dielectric properties and the microstructures of MgNb₂O₆ ceramics with CuO additions (1-4 wt.%) prepared with conventional solid-state route have been investigated. The sintered samples exhibit excellent microwave dielectric properties, which depend upon the liquid phase and the sintering temperature. It is found that MgNb₂O₆ ceramics can be sintered at 1140 °C due to the liquid phase effect of CuO addition. At 1170 °C, MgNb₂O₆ ceramics with 2 wt.% CuO addition possesses a dielectric constant (ε_r) of 19.9, a Q×f value of 110,000 (at 10 GHz) and a temperature coefficient of resonant frequency (τ_f) of −44 ppm/°C. The CuO-doped MgNb₂O₆ ceramics can find applications in microwave devices requiring low sintering temperature.     

Effect of sintering time on crystal structure and microwave dielectric properties in aeschynite-structured (Sm1−xYx)(Ti1.5W0.5)O6 (x = 0 and 0.5) ceramics

The crystal structure and microwave dielectric properties of the (Sm_1−xY_x)(Ti_1.5W_0.5)O₆ (x = 0 and 0.5) ceramics sintered at 1375 °C for 2-50 h were investigated in this study. No secondary phase was observed in the samples sintered for various sintering times, whereas a secondary phase was formed in the (Sm_0.5Y_0.5)(Ti_1.5W_0.5)O₆ ceramic sintered at 1400 °C for 50 h. As for the microstructure analysis, the formation of the liquid phase was observed in the both of the samples sintered for 20 and 50 h. The formation of the liquid phase is related to the compositional change of Ti and W from the stoichiometric composition of the samples caused by the instability of crystal structure. The dielectric constants were increased with increased sintering time in the both of the samples, though variations in the temperature coefficient of resonant frequency of the samples were not recognized with the variation in the sintering time. Moreover, although the quality factors of the each sample increased with increasing the sintering time from 2 to 10 h, decreases in the quality factors were recognized when the sintering time was over 10 h.     

Dielectric properties of Ba3−xKxCaNb2O9−δ (0.5 < x < 1.25) (KBCN) double perovskites

We report synthesis, structure and dielectric properties of double perovskite-type Ba_3−xK_xCaNb₂O_9−δ (x = 0.5, 0.75, 1, 1.25) (KBCN). Powder X-ray diffraction (XRD) confirmed the formation of double perovskite-type structure and lattice constant decreases with increasing K in KBCN. AC impedance study showed a single semicircle over the investigated temperatures and frequencies in dry H₂, H₂ + 3% H₂O, 3% H₂O + N₂, while two semicircles were observed at low temperatures in air, which could be attributed to bulk and grain-boundary contributions. Unlike un-doped BCN, KBCN exhibits negligible grain-boundary and electrode effects to the total electrical properties and is consistent with perovskite-type K-doped BaZrO₃. The bulk dielectric constant and dielectric loss were found to increase with increasing K content in KBCN and also found to change with sintering temperature. Among the samples investigated, Ba_1.75K_1.25CaNb₂O_9−δ sintered at 1100 °C showed the highest dielectric constant of 65 at 10⁶ Hz and dielectric loss of 0.14 at 400 °C in air. Isothermal dielectric constant and electrical conductivity at 1 MHz were found to be independent at elevated temperatures, while vary at low-frequency and low temperatures. Below 700 °C, dielectric constant and dielectric loss decreases with increasing frequency, whereas an opposite trend was observed for the electrical conductivity.     

Synthesis of BaTi4O9 ceramics by reaction-sintering process

Synthesis of BaTi₄O₉ ceramics by a reaction-sintering process was investigated. The mixture of raw materials for stoichiometric BaTi₄O₉ were pressed and sintered into ceramics without any calcination stage involved. Pure BaTi₄O₉ phases were obtained at 1150-1280 °C. High-sintered density, 98.2-99.5% of theoretical value (4.533 g/cm³), can be obtained for pellets sintered at 1200-1280 °C for 2-6 h. Some rod-shaped grains 3-7 μm in the longitudinal axis appear in pellets sintered at 1230 °C. Both the size and the amount of these rod-shaped grains increase at higher sintering temperature.     

Modified tunable dielectric properties by addition of MgO on BaZr0.25Ti0.75O3 ceramics

Phase composition, microstructure and tunable dielectric properties of (1 − x)BaZr_0.25Ti_0.75O₃-xMgO (BZTM) composite ceramics fabricated by solid-state reaction were investigated. It was found Mg not only existed in the matrix as MgO, there was also trace amount of Mg²⁺ ions dissolved in the BZT grains, which led to Curie temperature of the BZTM composites ceramics shifting to below −100 °C. Dielectric permittivity of the BZTM composite ceramics was reduced from thousands to hundreds by manipulating the content of MgO. Johnson's phenomenological equation based on Devonshire's theory was used to describe the nonlinear dielectric permittivity of the ceramics with increasing applied DC field. With increasing content of MgO, anharmonic constant α_(T) increased monotonously. Dielectric permittivity was 672, while dielectric tunability was as high as 30.0% at 30 kV/cm and dielectric loss was around 0.0016 for the 0.6BaZr_0.25Ti_0.75O₃-0.4MgO sample at 10 kHz and room temperature.     

(5 − x)BaO-xMgO-2Nb2O5 ceramics prepared using a reaction-sintering process

(5 − x)BaO-xMgO-2Nb₂O₅ (x = 0.5 and 1; 5MBN and 10MBN) microwave ceramics prepared using a reaction-sintering process were investigated. Without any calcinations involved, the mixture of BaCO₃, MgO, and Nb₂O₅ was pressed and sintered directly. MBN ceramics were produced after 2-6 h of sintering at 1350-1500 °C. The formation of (BaMg)₅Nb₄O₁₅ was a major phase in producing 5MBN ceramics, and the formation of Ba(Mg_1/3Nb_2/3)O₃ was a major phase in producing 10MBN ceramics. As CuO (1 wt%) was added, the sintering temperature dropped by more than 150 °C. We produced 5MBN ceramics with these dielectric properties: ?_r = 36.69, Qf = 20,097 GHz, and τ_f = 61.1 ppm/°C, and 10MBN ceramics with these dielectric properties: ?_r = 39.2, Qf = 43,878 GHz, and τ_f = 37.6 ppm/°C. The reaction-sintering process is a simple and effective method for producing (5 − x)BaO-xMgO-2Nb₂O₅ ceramics for applications in microwave dielectric resonators.     

Preparation of LiFePO4/C composite powders by ultrasonic spray pyrolysis followed by heat treatment and their electrochemical properties

LiFePO₄ powders could be successfully prepared from a precursor solution, which was composed of Li(HCOO)·H₂O, FeCl₂·4H₂O and H₃PO₄ stoichiometrically dissolved in distilled water, by ultrasonic spray pyrolysis at 500 °C followed by heat treatment at sintering temperatures ranging from 500 to 800 °C in N₂ + 3% H₂ gas atmosphere. Raman spectroscopy revealed that α-Fe₂O₃ thin layers were formed on the surface of as-prepared LiFePO₄ powders during spray pyrolysis, and they disappeared after sintering above 600 °C. The LiFePO₄ powders prepared at 500 °C and then sintered at 600 °C exhibited a first discharge capacity of 100 mAh g⁻¹ at a 0.1 C charge-discharge rate. To improve the electrochemical properties of the LiFePO₄ powders, LiFePO₄/C composite powders with various amounts of citric acid added were prepared by the present method. The LiFePO₄/C (1.87 wt.%) composite powders prepared at 500 °C and then sintered at 800 °C exhibited first-discharge capacities of 140 mAh g⁻¹ at 0.1 C and 84 mAh g⁻¹ at 5 C with excellent cycle performance. In this study, the optimum amount of carbon for the LiFePO₄/C composite powders was 1.87 wt.%. From the cyclic voltammetry (CV) and AC impedance spectroscopy measurements, the effects of carbon addition on the electrochemical properties of LiFePO₄ powders were also discussed.     

Effect of B2O3-Bi2O3-SiO2-ZnO glass on the sintering and microwave dielectric properties of 0.83ZnAl2O4-0.17TiO2

The 0.83ZnAl₂O₄-0.17TiO₂ (ZAT) ceramics were synthesized by solid state ceramic route. The effect of 27B₂O₃-35Bi₂O₃-6SiO₂-32ZnO (BBSZ) glass on the microwave dielectric properties of ZAT was investigated. The crystal structure and the microstructure of the ceramic-glass composites were studied by X-ray diffraction and scanning electron microscopic techniques. The low frequency dielectric loss was measured at 1 MHz. The dielectric properties of the sintered samples were measured in the microwave frequency range by the resonance method. Addition of 0.2 wt% of BBSZ improved the dielectric properties with quality factor (Q_u × f) > 120,000 GHz, temperature coefficient of resonant frequency (τ_f) = −7.3 ppm/°C and dielectric constant (?_r) = 11.7. Addition of 10 wt% of BBSZ lowered the sintering temperature to about 950 °C with Q_u × f > 10,000 GHz, ?_r = 10 and τ_f = −23 ppm/°C. The reactivity of 10 wt% BBSZ added ZAT with silver was also studied. The results show that ZAT doped with suitable amount of BBSZ glass is a possible material for low-temperature co-fired ceramic (LTCC) application.     

Ln2Mo3O12 (Ln = La, Nd): A novel group of low loss microwave dielectric ceramics with low sintering temperature

Ln₂Mo₃O₁₂ (Ln = La, Nd) ceramics with a defect scheelite related structure were prepared via a solid state reaction method. The La₂Mo₃O₁₂ ceramics sintered at 930 °C for 2 h exhibited a low dielectric permittivity of 10.1, a high quality factor (Qf value) of 60,000 GHz and a temperature coefficient of −80 ppm/°C at 12.7 GHz. The Nd₂Mo₃O₁₂ ceramics sintered at 945 °C for 2 h possessed a dielectric permittivity of 8.2, a Qf value of 80,000 GHz, and a temperature coefficient of −60 ppm/°C at 15.8 GHz. This group of ceramics could be good candidates for microwave substrate applications.     

Effect of temperature on nonlinear electrical behavior and dielectric properties of (Ca, Ta)-doped TiO2 ceramics

TiO₂ ceramics doped with 0.75 mol% Ca and 2.5 mol% Ta were sintered at different temperatures ranging from 1300 to 1450°C. The effects of sintering temperature on the microstructure, nonlinear electrical behavior, and dielectric properties of the ceramics were studied. The sample sintered at 1300°C exhibits the highest nonlinear coefficient (5.5) and a comparatively lower relative dielectric constant.     

Synthesis, low-temperature sintering and the dielectric properties of the ZnO-(1 − x)TiO2-xSnO2 (x = 0.04-0.2)

ZnO-(1 − x)TiO₂-xSnO₂ (x = 0.04-0.2) ceramics were prepared by conventional mixed-oxide method combined with a chemical processing. Fine particle powders were prepared by chemical processing to activate the formation of compound and to improve the sinterability. One wt.% of V₂O₅ and B₂O₃ with the mole ratios of 3:1 were used to lower the sintering temperature of ceramics. The effect of Sn content on phase structure and dielectric properties were investigated. The results show that the substituting Sn for Ti accelerates the hexagonal phase transition to cubic phase, and an inverse spinel structure Zn₂(Ti_1−xSn_x)O₄ solid solution forms. The best dielectric properties obtained at x = 0.12. The ZnO-0.88TiO₂-0.12SnO₂ ceramics sintered at 900 °C exhibit a good dielectric property: ?_r = 29 and tan δ = 9.86 × 10⁻⁵. Due to their good dielectric properties, low firing characteristics, ZnO-(1 − x)TiO₂-xSnO₂ (x = 0.04-0.2) can serve as the promising microwave dielectric capacitor.