4GHz低噪声GaAs FET和80K FET放大器

<正>为进一步满足国内卫星通信事业发展的需要,使FET低噪声放大器的性能赶上世界先进水平,南京固体器件研究所正抓紧FET及其放大器的研究,最近又取得了新的进展.用该所研制的FET组装的4GHz放大器样机主要性能如下:     

4GHz120°K低噪声FET放大器

<正>近几年来,随着国内低噪声GaAs MESFET研制工作不断取得新的结果,FET低噪声放大器的研究工作也取得了较大进展.其中,放大器的主要性能指标噪声系数,在S、C、X波段都得到了较好的结果.以卫星通讯频段3.7～4.2GHz为例,南京固体器件研究所在80年     

12GHz GaAs FET放大器

<正> 1983年南京固体器件研究所研制定型的GaAs FET,在频率高达12GHz时,有优良的微波性能。该器件的噪声系数最佳水平F_(min)≤1.5dB,已与近年来国际上同类产品的先进水平相当。此器件的研制成功,为制作卫星通讯中12GHz FET放大器解决了关键性器件。 WC60型GaAs FET是凹槽结构,栅长为0.5μm,采用1.8×1.8mm方形金属陶瓷管壳气密封装。该器件的典型“S”参数列于表1。     

60GHz GaAs FET放大器

用1/4μm栅结构研制出新的毫米波场效应晶体管(FET)器件。这个器件在波导-微波集成电路(MIC)放大器电路中从55～62GHz有5.0±0.5dB的增益,在60GHz下最小噪声系数为7.1dB。     

低噪声1.21.8GHz致冷FET放大器

本文介绍了低噪声1.21.8 GHz致冷FET放大器的研制工作。在20K环境温度下,带宽1.21.7GHz范围内,放大器噪声温度低于10K,最佳为4K。增益约30dB。设计了一个噪声温度自动测试系统。另外对输入电缆的噪声和总测量误差作了分析。测试总误差为2K。     

4～8GHz GaAs FET 宽带放大器的新进展

简介了4～8 GHz GaAs FET 宽带放大器在已有工作基础上的改进,报导了最终设计定型产品的性能与结果。产品达到的主要电参数指标为:功率增益 G_p=28～33dB,噪声系数 F_n≤4dB。     

噪声温度为35°K的4GHz参量放大器

<正> 几年来,一些国内外厂家都在从事不用深冷技术而使4GHz参放噪声性能达到30～35°K水平的工作。根据我国卫星通讯事业发展的要求,南京固体器件研究所已研制成功固体化的热电致冷恒温的4GH2 35°K参放。这种低噪声放大器与循环致冷的参放比较起来具有体积小、寿命长、维护简便和可靠性高的优点,基本上可以取代深冷参放。新研制的35°K参放的主要特点如下: (1)设计了适于低温工作的高空闲频率的参放座,在结构上考虑了把和频、空闲频率和泵频进行良好的分隔。 (2)采用了多级热电致冷系统及比例控制恒温电路。 (3)研制了工作在-30℃下的四端超低损耗环行器。 (4)采用了动态优值更大的变容二极管。     

4GHz低噪声GaAsFET放大器

讨论了4GHz GaAsFET低噪声集成放大器的直流及微波电路设计,介绍了不同的直流偏压电路和微波电路结构。最后给出了用国产CX51型GaAsFET制作的4GHz(4.1～4.4GHz)低噪声放大器的测试结果。这种两级放大器的噪声系数NF≤2.5dB(包括内部微带隔离器),功率增益Ga≥20dB。     

4～8GHz倍频程GaAs FET VCO

本文叙述了采用单变容管调谐的4～8GHz共漏反沟道GaAs FET VCO的设计和研究结果。振荡器的直接输出功率大于16.5dBm,功率平坦度为±2dBm,线性度优于3:1(电调灵敏度之比)。并给出了振荡器其他性能。     

8GHz功率场效应放大器

本文叙述了用于微波中继通讯的功率GaAs FET放大器.介绍了设计方法和研制结果,8GHz下获得输出功率600mW、增益大于34dB、线性度良好的结果,并已经用于微波中继通讯无人站中.     

Microwave Power GaAs FET Amplifiers

The development of broad-band microwave amplifiers using state-of-the-art GaAs power FET's covering the 6-12-GHz frequency band is presented. A unique circuit topology incorporating an edge-coupled transmission line section for both impedance matching and input/output dc blocking is described. The microstrip circuit design of an X-band 1-W 22-dB-gain GaAs FET amplifier is also discussed. Microwave performance characteristics such as intermodulation, AM-to-PM conversion, and noise figure are included.     

K-Band High-Power GaAs FET Amplifiers

Lumped-element internal matching techniques were successfully adopted for K-band power GaAs FET amplifiers. The developed 18-GHz band two-stage amplifier provides 1.05-W power output at 1-dB gain compression and 1.26-W saturated power output with 8.1-dB small-signal gain. The 20-GHz band single-stage amplifier has 1.04-W power output with 3-dB associated gain. Lumped-element internal matching circuit design as well as amplifier fabrication are described. Intermodulation distortion and AM-to-PM conversion characteristics are also presented.     

110 GHz GaAs FET oscillator

A W-band GaAs FET oscillator has been demonstrated for the first time. A 75 ?m gate width device with sub-half-micrometre (0.2 ?m) electron-beam defined gates was used as a common-gate oscillator for operation in the 70 to 110 GHz frequency range. The highest oscillation frequency achieved was 110 GHz.     

Design of Broad-Band Power GaAs FET Amplifiers

A model is presented for the drain-gate breakdown phenomenon of GaAs FET's, based on experimental results. this breakdown model is added to a previously published large-signal model and incorporated in a powerful computer-aided design program called LSFET. The program is capable of searching for the optimum power load for an FET and simulating the power performance of multistage amplifiers. The design of power amplifiers is discussed in detail, using the knowledge gained from LSFET. Data is presented from a fabricated monolithic broad-band power amplifier chip showing good agreement between measured results and simulated curves.     

NEDI'''' C Band GaAs FET Power Amplifiers

<正> Application Mainly used as the replacement of travelling wave tube in microwave communication system and a power amplifier in a satellite communication earth station. Features It employs GaAs MESFETs and a microstrip structure, with Iow power consumption and high reliability.     

Design of Broad-Band GaAs FET Power Amplifiers

A direct systematic approach to designing broad-band GaAS FET power amplifiers for optimum large-signal gain performance is described. Assets of this approach include its accuracy in predicting large-signal amplifier performance and its basic simplicity. The implementation of the technique is facilitated by having to measure large-signal device bebavior at only one single frequency. The practicability of the method is demonstrated through comparisons between measured and predicted results.     

微波FET宽带放大器综述

本文介绍了当前微波FET宽带放大器发展概况和动向,概括说明目前一些主要宽带放大器的机理、特点和设计方法.