Nd2Fe14B/α-Fe系双相复合永磁合金快淬带的SEM分析

利用扫描电子显微镜分析了两种成分的Nd2Fe14B／α－Fe系双相复合永磁合金快淬带的形貌，结果表明复合添加Dy和Ga具有改善合金淬带组织形貌的作用。     

无机添加剂对铅负极板表面形貌的影响

铅酸蓄电池的容量和寿命受到添加剂的影响。通过扫描电镜研究了负极板的表面形貌 ,结果表明 :有硫酸钠添加剂时 ,随着循环过程的进行 ,充电过程中形成的铅粒子明显增大 ,且结构松散 ,放电过程中形成的PbSO4晶体颗粒大小不均 ,极板表面明显破坏 ,故而减少电池容量和使用寿命 ;有硫酸镉添加剂存在时 ,充电过程中形成的铅粒子颗粒细小 ,且具有疏松的立体结构 ,晶体之间空间较大 ,放电过程中形成的PbSO4具有均一的表面状态 ,极板状态较好 ,增加了蓄电池的容量和寿命     

新型铅酸蓄电池隔板微观结构和宏观性能分析

针对几种新型的铅酸蓄电池隔板（SWP隔板、PG隔板、DE隔板、LP隔板、PE橡胶隔板、PVC-SiO2隔板）的微观结构,做了扫描电镜图,结合扫描电镜图对新型隔板的微观结构及宏观性能进行分析和讨论。以期能正确认识各种隔板的优、缺点,使蓄电池厂家更好地选用合适的隔板。     

生长温度对ZnO纳米结构形貌的影响

研究了用气相输运方法制备ZnO纳米结构时,生长温度对ZnO纳米形貌的影响。当生长温度在400℃时,获得的是ZnO纳米锥,它们紧密结合在一起,形成了纳米锥薄膜;当生长温度升至450℃时,获得的是在ZnO纳米片上生长着杂乱无章的纳米线的双层结构;当生长温度升至480℃时,获得的是单一没有规则的ZnO纳米线;当生长温度升至560℃时,获得的是ZnO纳米片。试验结果表明:温度决定了ZnO纳米形貌特征。     

Al掺杂的ZnO纳米结构材料制备及其电极设计

介绍了一维Al掺杂的ZnO（Al-ZnO）纳米结构材料的制备,研究了该材料体系的电极设计与优化。结果表明,适合于这种材料的电极为Au／Ni双层金属膜,经过在Ar和N2气氛中分别退火处理后,Au／Ni双层金属膜与Al-ZnO纳米结构材料的接触电阻得到明显降低,并且在Ar气氛中退火要好于在N2气氛中退火。     

运行后复合绝缘子的理化分析

为了获得复合绝缘子在运行后老化的状况,选取了3个厂家生产的6支绝缘子试样,分别对这6支试样进行了憎水性测试、Fourier红外光谱分析、热分析和扫描电镜(SEM)检测。结果表明:硅橡胶表层的憎水性基团Si-CH3、-CH3各自与-Si-O-Si-基团的摩尔比明显低于中心层,而-OH未见明显规律;憎水性基团Si-CH3、-CH3摩尔比的相对变化能较好地表征憎水性,而-OH不宜作为复合绝缘子的憎水性表征指标。新复合绝缘子表层和中心层的组成基本相同。投运后复合绝缘子表层和中心层中无机化合物的质量规律性不明显;表层及中心层中高分子物质的质量随运行时间的延长而呈下降趋势,且中心层中高分子物质的质量高于表层;表层中低分子物质的质量高于中心层。投运时间对试样的扫描电镜结果具有一定的影响。新复合绝缘子试样喷水后的憎水性级别为HC1,运行后试样的憎水性级别处于HC3～HC4,同一复合绝缘子试样中不同伞裙、不同位置的憎水性也略有不同。研究结果对复合绝缘子老化评估具有参考价值。     

硅藻土特性对复合绝缘子人工污秽试验的影响

复合绝缘子的耐污闪性能主要受硅橡胶材料的憎水性和憎水迁移特性的影响,复合绝缘子人工污秽试验中,不溶污秽的特性对硅橡胶的憎水迁移性有很大的影响,因此在复合绝缘子人工污秽试验中选用合适的不溶污秽对试验结果的可对比性具有至关重要的意义。对6种不同硅藻土在高温硫化硅橡胶(HTV)和室温硫化硅橡胶(RTV)表面进行了憎水迁移性试验,研究了不同硅藻土特性对材料憎水迁移性的影响,并进行了不同污秽类型的电镜扫描和比(BET)表面积、孔隙度的研究。试验结果表明,不同的硅藻土对硅橡胶表面憎水性的迁移速度有很大的影响,且与其微观特性有着比较好的相关性。根据试验结果对人工污秽试验所用硅藻土的特征值进行了推荐。该文的研究结果可以作为分析硅橡胶材料憎水迁移特性的参考,同时也为复合绝缘子人工污秽试验的标准制定提供了一定的依据。     

P92钢中拉弗斯相的尺寸测量及其长大规律的动力学模拟计算

拉弗斯相(Laves相)是超超临界机组用新型耐热钢——P92钢的重要析出相之一,对其在扫描电镜下的尺寸测量方法进行介绍,并采用热力学软件计算分析其长大规律。在扫描电镜下形成的背散射图像的原子序数差及二次电子像能够清晰地辨别出Laves相和碳化物(M23C6),这是Laves相测量方法的基础。通过与透射电镜对比,表明扫描电镜是分析Laves相的优先使用的方法。测量了3种P92钢中Laves相颗粒尺寸,研究表明Laves相颗粒尺寸越小,数量越多,材料的抗蠕变性能越好,相同条件下蠕变断裂时间越长。采用热力学计算程序DICTRA进行数值模拟,结果表明,所采用的Laves相长大模型能够很好地模拟Laves相的长大规律,但长时间(650℃、20000h和600℃、50000h)后应采用奥斯特瓦尔德长大规律(Ostwald ripening)来分析Laves相。     

Studies of ZnO Thin Films On Sapphire (0001) Substrates Deposited by Pulsed Laser Deposition

ZnO thin films are deposited on sapphire (0001) substrates at different temperatures in the pulsed laser deposition (PLD) system. By measurements of X-ray diffraction (XRD), atomic force microscopy (AFM), and Photoluminescence (PL) at room temperature, fabrication temperatures higher than 400C is found to be the optimum condition for the structural and optical properties of ZnO thin films. With the increase of the fabrication temperature, the grain size becomes bigger and the thin film becomes more homogeneous. In order to get the high-quality ZnO thin film at low temperature, ZnO thin films are deposited at room temperature and annealed in a rapid thermal annealing (RTA) system. It is found that the optical property of the thin film can be greatly improved by annealing in RTA system.     

纸板的老化状态对其PDC特性影响的实验研究

为研究纸板劣化对其极化去极化电流（polarization and depolarization currents,PDC）特性的影响,在实验室内对油浸变压器绝缘纸板进行加速热老化,在不同老化阶段取出纸板试品,对不同老化状态的纸板进行石油醚萃取变压器油和真空干燥处理。为了表征绝缘纸板的老化状态,对各老化阶段的纸板采用粘度法测量聚合度,并使用扫描电子显微镜（scanning electron microscope,SEM）观察纤维素表面的微观结构及破坏状况。在同一温度下,对干燥后不同老化状态的纸板分别进行真空中和新变压器油浸渍条件下的PDC测量。结果表明,随着老化时间的延长,纸板聚合度下降,纤维表面微观结构破坏明显。纸板劣化造成真空中和油浸渍的纸板极化去极化电流显著增大,电导率增加,并导致其绝缘电阻降低,吸收比减小。因此,对于油纸绝缘,除老化产生的水分外,纸板劣化本身也将导致纸板电导率的增大,并显著影响其极化去极化电流的测量结果。     

光学麦克风封装材料相容性试验

为确保光学麦克风在电气设备内部应用的安全可靠性,文中选定聚氨酯、聚四氟乙烯、环氧树脂、聚醚醚酮和酚醛树脂作为封装材料,进行光学麦克风与电气设备相关的环境相容性试验,并采用扫描电子显微镜(scanning electron microscope,SEM)和傅里叶变换红外(Fourier transform infrared,FTIR)光谱仪对试验前后的材料性能进行检测。结果表明:聚氨酯表面易浸润变压器油且有明显颜色变化,不适用于油浸式变压器,但可用于水听器、空气和常温环境中;聚四氟乙烯与变压器油的相容性较好,可用于油浸式变压器、气体绝缘开关设备(gas insulated switchgear,GIS)和温度变化较大的场景;其余材料与电气设备的相容性不佳,适用性有待进一步研究。文中提出的封装材料与环境相容性试验的检测方法可为光学麦克风封装材料选型提供有益借鉴,具有一定的工程实用价值。     

Microstructure and Properties of Solution Deposited, Nb-Doped PZT Thin Films

Nb doped PZT films with Nb concentrations of 0, 5, 8 and 12 mol% are being processed via chemical solution deposition on platinized Silicon substrates. An original processing route including seed layer and additional PbO coating is presented whereby homogeneous, pyrochlore free microstructures with 111/100 texture are obtained. The temperature dependence of the dielectric constant shows diffuse peaks corresponding to the paraelectric to ferroelectric transition. The transition temperature is found to decrease from 325°C to 220°C with increasing Nb content. Nb is however found to lead to a substantial increase in the dielectric constant in comparison to non-doped PZT. The dependence of the dielectric constant on DC bias field is also reported. Strong asymmetries towards positive values both in the values of the dielectric constant and coercive fields are obtained at room temperature, and become replenished at 100°C. This is interpreted in terms of space charge effects on the pinning of domain walls. Furthermore, the loss tangent shows a relaxation peak which shifts to higher frequencies with increasing Nb content, and suggests that Nb-doping affects the dielectric properties of the interfacial layer. Finally, Nb addition is found to lead to slant hysteresis loops with lower remnant polarization and coercive field.     

干湿循环下红土力学性质劣化的多尺度试验

针对干湿循环下红土力学性质劣化的多尺度效应,开展了重塑红土的压汞试验、扫描电镜试验、细观裂隙试验和三轴剪切试验,分析了土体微细观结构损伤及宏观力学性质劣化规律,探讨了土体力学性质劣化的多尺度机制.研究结果表明:(1)重塑红土微观结构受干湿循环影响损伤明显,土颗粒丰度稍有增加,颗粒多被改造为近圆形和圆形;颗粒定向频率有所...     

Study on Oxygen-Sensing Properties of LaNiO3 Thin Films

The synthesis of rare-earth perovskite-type composition thin films of LaNiO₃ by means of the inorganic-sol-gel (ISG) method was studied. The structural stability under high temperature in reducing atmospheres and the oxygen-sensitivity mechanism of the LaNiO₃ thin films were examined. It is shown that under the experimental conditions, LaNiO₃ decomposes and the valance states of nickel are +2 and +3.     

MBR工艺中膜系统污染与堵塞的研究

为节约水资源,城市中水正逐步用作电厂补充水。为防止可能带来的污染,启用膜生物反应器（MBR）成为目前首选。通过对某电厂长期运行的MBR系统膜组件进行污染物成分分析及电镜分析,研究了浸没式MBR膜系统主要污染物及运行周期对膜污染程度的影响。研究结果表明,浸没式MBR膜系统主要为有机物污染,随运行时间增加,污染物形成密实且不可逆堵塞层,导致膜孔隙窄化、膜系统化学清洗效率降低。建议缩短膜系统化学清洗周期、优化清洗工艺,并应在膜系统跨膜压差明显增高初期对膜组件进行化学清洗,以达到良好的清洗效果。     

Ni65Co35薄膜各向异性磁电阻性能的研究

选用Ｎｉ６５Ｃｏ３５合金靶材，利用射频磁控溅射的方法成膜，采用四控针法测量磁电阻率，分别研究了溅射工艺参数（工艺气压、偏压、功率、基片温度等）对薄膜电阻性能的影响，并对影响的机理作了理论上的分析；另外还对Ｎｉ６５Ｃｏ３５薄膜的热处理动力学进行了研究，求取了激活能。研究结果表明，溅射工艺参数对Ｎｉ６５Ｃｏ３５薄膜的电阻力有较大的影响，适当的溅射参数能有效地提高磁电阻率；Ｎｉ６５Ｃｏ３５薄膜退火处理后     

High Quality Silicon-Based AlN Thin Films for MEMS Application

ABSTRACT

Aluminum nitride is an attractive piezoelectric material for MEMS devices such as bulk acoustic wave (BAW) devices. (002)-oriented AlN films were deposited on Si, Al and Pt by reactive sputtering. Optimized AlN (002) peak reaches a full width at half maximum (FWHM) of 5.6°. Auger electron spectroscopy is used to analyze the oxygen contamination of films. To find the suitable electrode material for device application, the growth mechanism of AlN crystallites on different substrates is also discussed. Based on sputtered AlN films, the prototype of AlN thin film bulk acoustic resonator (TFBAR) was fabricated successfully.     

室温硫化与温硫化硅橡胶在交流电晕下憎水特性的比较

为了研究交流电晕对室温硫化（room temperature vulcanization,RTV）和高温硫化（high temperature vul—canization,HTV）硅橡胶憎水性丧失和恢复的影响,基于硅橡胶电晕测试系统在相同的温度、湿度和场强下对同样厚度的RTV和HTV硅橡胶进行了电晕,测量l『不同电压...     

紫外辐射对高温硫化硅橡胶性能影响初探

高温硫化(HTV)硅橡胶凭其强憎水性、憎水迁移性和恢复性等优越性能,成为合成绝缘子外绝缘的首选材料。然而,与无机材料相比,高温硫化硅橡胶更易受环境影响而老化,因此通过氙灯辐照对高温硫化硅橡胶进行紫外加速老化试验。采用静态接触角法测量和评价硅橡胶材料的憎水性,同时进行了硬度以及扫描电子显微镜(SEM)测试,另外采用image-pro plus 6.0软件对SEM图片进行测试分析。试验结果表明:短时氙灯辐照对高温硫化硅橡胶表面憎水性影响不大,材料硬度有变大趋势,材料表面凹凸不平,粗糙度变大,并有填充物外露的趋势。随着辐照时间增加,欲析出颗粒数目逐渐增多,颗粒大小逐渐变大,总面积增加。     

Aging and Annealing Effects of ZnO Thin Films on GaAs Substrates Deposited by Pulsed Laser Deposition

Zinc oxide (ZnO) thin films were deposited on GaAs (100) substrates at different temperatures in the pulsed laser deposition (PLD) system. From the measurements of X-ray diffraction (XRD) at room temperature, 300–500°C were found to be good condition for the crystallization of the thin films. From the photoluminescence (PL) measurements, 500°C was found to be the optimized temperature for its optical property. Samples grown at 100, 200, 300, and 400°C showed near band-edge (NBE) emissions and deep-level emissions. The intensity of deep-level emissions decreased as time goes on, which is believed to originate from oxygen vacancies or zinc interstitials in thin films. While for the sample grown at 500°C, bright NBE emissions were observed at room temperature, and no deep-level emissions observed. This means that the high-optical-quality thin film was grown at 500°C. At the same time, annealing process of ZnO thin films grown at room temperature was carried out in PLD chamber. It was found that the annealing temperature of 600°C has strong effects on its PL. Aging and annealing effects in ZnO thin films grown on GaAs substrates by PLD were observed for the first time.