基于HHT的微晶玻璃超光滑表面抛光

针对激光陀螺反射镜常用材料微晶玻璃的加工技术,介绍了一种较为成熟的超光滑表面加工方法-定偏心浸液式抛光.分析了微晶玻璃的性能和微观结构,得出实现其超光滑表面加工所必须的技术条件.系统论述了提出的超光滑表面抛光方法的基本原理及其抛光工艺过程.通过多次工艺实验,稳定地获得了埃量级的超光滑表面.最后,采用Hilbert-Huang变换(HHT)非线性平稳信号的时域分析法,通过超光滑表面粗糙度分布曲线到Hilbert谱的一系列数学变换,得出主要抛光工艺参数与表面粗糙度之间的影响关系,对实际加工工艺过程与抛光结果进行有效反馈和指导.基于HHT的超光滑表面抛光方法可以稳定地获得Ra优于0.35 nm的微晶玻璃超光滑表面,目前最好结果为Ra=0.3 nm.     

不同粒度纳米金刚石抛光微晶玻璃的研究

选用4种不同粒度的纳米金刚石抛光微晶玻璃,考察了纳米金刚石磨料的粒度对抛光速率和表面粗糙度的影响。采用AFM分析不同抛光表面的微观形貌,讨论了纳米金刚石与微晶玻璃的作用机制。结果表明:采用纳米金刚石抛光微晶玻璃可获得亚纳米级的表面粗糙度;随纳米金刚石粒度的降低,纳米金刚石的抛光速率减小,微晶玻璃表面平均粗糙度降低;微晶玻璃表面晶粒的不同断裂方式影响抛光后的表面粗糙度。     

超光滑表面加工技术研究进展

针对如何高效稳定地获得粗糙度值小、少无亚表面损伤、低成本的超光滑表面的问题,分析了原子级超光滑表面加工技术的加工原理,详细阐述了几类非接触式抛光方法的加工原理及国内外最新研究进展,并着重论述了声悬浮抛光和磨料水射流抛光的研究现状。接着,在此基础上对这几类加工方法各方面的优缺点进行了对比总结。最后,针对目前超光滑表面加工技术存在的不足,指出了超光滑表面加工技术有待进一步研究的方向。研究结果表明,采用非接触式的抛光方法,对加工过程加以合理的控制,可大大降低工件表面粗糙度,改善亚表面的损伤情况;目前非接触式抛光普遍对抛光设备精度要求较高,减少加工成本是超光滑表面加工技术进行大规模推广的迫切要求。     

添加剂对微晶玻璃化学机械抛光的影响

利用自制抛光液对微晶玻璃进行化学机械抛光,研究络合剂、氧化剂、润滑剂种类及添加量对微晶玻璃化学机械抛光材料去除速率和表面粗糙度的影响。结果表明:抛光液中加入质量分数0.2%的EDTA络合剂后,能大幅降低材料表面粗糙度;加入质量分数2%的过硫酸铵氧化剂后能得到较光滑的材料表面和较高的材料去除速率;加入质量分数为0.2%的丙三醇润滑剂后能降低材料表面粗糙度。将EDTA络合剂、过硫酸铵氧化剂丙、三醇润滑剂加入SiO_2抛光液中对微晶玻璃进行化学机械抛光,利用原子力显微镜观察抛光微晶玻璃抛光前后的表面形貌。结果表明,抛光后微晶玻璃表面极为平整,达到了0.12 nm的纳米级光滑表面,且材料去除速率达到72.8 nm/min。     

超光滑高精度微晶玻璃的平面抛光工艺

介绍了一种新型的定偏心式的锡磨盘的超精密平面抛光工艺。在建立了平面材料去除和抛光轨迹的数学模型的基础上,对微晶玻璃进行工艺实验。通过调整影响其精度的工艺装备及工艺参数,能够获得平面度为０．０４～０．０６μｍ ／３０ｍ ｍ ,表面粗糙度为Ｒａ０．３０ｍ ｍ 。     

光学材料无磨料低温抛光的试验研究

将无磨料抛光与低温抛光结合起来,首次提出一种可获得原子级超光滑表面的新方法——无磨料低温抛光。这种新工艺可使光学材料获得Ra<1nm的原子级超光滑表面,通过大量的试验,系统研究了抛光盘水质、抛光前修盘时间、抛光压力和偏心等对已加工表面粗糙度的影响规律。结果表明,这种抛光工艺能获得原子级的超光滑表面。     

抛光液pH值对玻璃超光滑表面完整性影响

为研究抛光液的pH值在精密抛光加工过程中对表面完整性的影响,选取K9玻璃为试件材料,用浮法抛光加工成超光滑表面,使用相同浓度的氢氟酸和氢氧化钠溶液对2个试件进行腐蚀,用原子力显微镜、扫描电镜和纳米硬度计测量作用不同时间段的表面质量,通过对比分析各作用时间段2个试件的表面粗糙度、表面形貌和表层硬度的相似和差异,研究了pH值对超光滑表面完整性的影响,得出在玻璃工件抛光加工中,抛光液为微碱环境有利于提高加工效率和得到高质量的超光滑表面.     

纳米氧化硅在玻璃基片表面亚纳米级抛光中的应用

为满足先进电子产品对玻璃基片表面超光滑的要求,制备了一种纳米氧化硅抛光液,并研究了氧化硅粒子大小、抛光时间等参数对玻璃基片抛光后表面粗糙度、材料去除速率的影响。ZYGO形貌仪表明,采用纳米氧化硅抛光液,可以使玻璃表面粗糙度达到0.5 nm左右。AFM表明,抛光后的玻璃基片表面超光滑且无划痕等微观缺陷。     

一种光学材料高效超精密加工方法

提出了结合磁流变光整加工(MRF)与在线电解修整(ELID)磨削对各种光学材料进行超精密加工的方法,即采用ELID磨削进行预抛光以获得高质量表面,然后采用MRF进行精密抛光以进一步减小表面粗糙度和形状误差.利用该组合工艺对BK7玻璃、硅晶玻璃、碳化硅等光学材料进行了超精密加工实验,可以在短时间内使光学材料工件表面得到亚纳米级的表面粗糙度和峰谷值为λ/20(λ为单位波长,λ=632.8nm)的形状精度.     

硅晶片抛光加工工艺的实验研究

双面抛光已成为硅晶片的主要后续加方法,但由于需要严格的加工条件,很难获得理想的超光滑表面.设计了硅片双面抛光加工工艺新路线,并在新研制的双面抛光机上对硅晶片进行抛光加工,实验研究了不同加工参数对桂晶片表面粗糙度和材料去除率的影响.采用扫描探针显微镜和激光数字波面干涉仪分别对加工后的硅晶片进行测量,实验结果表明:在优化实验条件下硅晶片可以获得表面粗糙度0.533nm的超光滑表面.     

一种提高空间用RB-SiC基底反射镜表面改性效果的有效方法

为了满足空间应用中大口径、复杂轻量化结构的RB-SiC基底反射镜对高性能表面质量的应用需求,针对RB-SiC基底的特性,改进了表面改性工艺方法。采用高能量考夫曼离子源辅助,预先对基底进行碳化和加镀C缓冲层,并制备Si改性涂层的方法对RB-SiC基底进行了表面改性。测试结果表明：与单纯霍尔离子源辅助方法相比,此工艺方法制备的Si改性涂层生长得更加致密、均匀,抛光特性良好;改性抛光后表面粗糙度（rms）降低到0.635nm,已达到S-SiC基底的水平;改性后RB-SiC基底的反射率明显提高,已经达到抛光良好的微晶玻璃的水平。结果表明该工艺方法是提高RB-SiC基底表面改性效果的一种十分合理有效的方法。     

Characterization of high-quality surfaces by Nomarski microscopy and light scattering

Supersmooth mirror substrates for laser-gyro applications were investigated. Bare samples made of BK7 glass, fused silica, and different silicon wafers were examined. Nomarski differential interference contrast microscopy was used to characterize the quality of the surfaces using a specially selected microscope objective with ultralow internal light scatter. The microscope system resolved a root mean square roughness in the range of 0.05 nm. Photographs of these supersmooth surface structures are presented. To obtain additional information, the total integrated light scattering of the bare substrates was measured. An Ulbricht integrating sphere with a diameter of 0.125 m was used for this purpose. Unwanted light scatter by the rear side of the transparent substrate was blocked using a special diaphragm. A specially developed polishing process that yields surfaces with a roughness of about 0.1 nm and probably lower is discussed.     

超薄石英晶片超精密抛光实验的研究

为了解决超薄石英晶片高表面质量的加工问题,以及寻求一种高效低成本的加工方法,将一种新的超精密抛光工艺应用到超薄石英晶片的加工中。给出了加工过程中的抛光原理,制定出了在研磨和抛光过程中的最优实验条件,并对加工后超薄石英晶片的粗糙度和厚度做了详细的分析;讨论了磨粒的尺寸对表面粗糙度和材料去除率的影响,同时对加工过程的材料去除机理做了论述,以表面粗糙度和厚度为评价目标对超薄石英晶片的加工特性和表面质量进行了评价。研究结果表明：使用该实验的工艺加工超薄石英晶片可以得到厚度为99．4μm、表面粗糙度为0．82nm的超光滑表面;同时,该研究还发现通过延长抛光时间可以减小石英晶片的表面残余应力,可有效控制石英晶片四角“翘曲”现象,得到更好的平面度和平行度。     

GaN 用衬底材料 LiGaO2 晶体超精密抛光的初步实验

主要介绍了作为发光半导体GaN衬底材料的LiGaO₂单晶超精密抛光方法及初步结果。利用聚氨酯抛光盘配合SiO₂悬浮液,采用机械化学抛光方法,已加工出表面粗糙度优于0.1mm,的超光滑表面。     

纳米胶体自激脉冲空化射流抛光技术

为了满足光学复杂曲面的精密、高效加工,提出一种利用空化效应促进射流加工效率的光学表面加工方法——纳米胶体自激脉冲空化射流抛光,并研制了加工系统。采用流体动力学对纳米胶体自激脉冲空化射流抛光中的喷射过程进行了仿真,获得了周期为0.3s的自激脉冲射流典型时刻下加工流场的流体动、静压力、速度、空化效应分布规律。进行了纳米胶体自激脉冲空化射流抛光试验,结果表明该系统能够产生效果良好的自激脉冲空化射流。采用该方法对单晶硅表面进行加工可以得到表面粗糙度为Ra0.904nm(Rms1.225nm)的超光滑表面,此加工表面粗糙度质量与相同加工条件下的普通纳米胶体射流抛光相当,但其加工效率较普通纳米胶体射流抛光能够提升20%左右,能够满足光学表面高效精密加工的需要。     

机器人磨抛力柔顺控制研究进展

低成本、高灵巧度机器人在磨抛领域中的应用越来越广,而对机器人磨抛力的柔顺控制是降低工件表面粗糙度、获得高形状精度和表面完整性的关键。综述了国内外学者在机器人磨抛力主动柔顺控制策略、被动柔顺控制装置、主被动柔顺控制方法等方面的主要研究成果,分析了各种典型控制方法的原理及实现过程,比较了各方法的优缺点,并指出了目前研究存在的问题。最后总结了关键技术难点并展望了发展趋势。     

亚纳米量级光滑表面的超精密抛光

软Ｘ射线光学的发展，对光学元件表面提出超光滑要求，为此我们开展了使用锡磨盘的超精密抛光方法研究。本文介绍锡磨盘磨削的实验装置及主要结果。利用这种方法已加工出表面粗糙度优于０．３ｎｍ的超光滑表面     

A novel polishing method for single-crystal silicon using the cavitation rotary abrasive flow

Traditional low-pressure abrasive flow polishing can produce highly smooth surfaces, but the efficiency of this method is too low for polishing of hard-brittle materials parts. This paper proposes a novel cavitation rotary abrasive flow polishing (CRAFP) method. The energy generated from the cavitation bubble collapse is used to increase the kinetic energy of the abrasive particles in the low-pressure abrasive flow and the motion randomness of the abrasive particles near the wall; thereby, the efficiency and quality of low-pressure abrasive flow polishing are improved. The CRAFP mechanism was first introduced, and then the characteristics of the CRAFP process were investigated using computational fluid dynamics (CFD)-based abrasive flow simulation. Subsequently, a single-crystal silicon wafer polishing test was carried outperformed to verify the validity of the CRAFP method. The polishing results were compared with those of the traditional low-pressure abrasive flow polishing method. After 8 h of polishing using the CRAFP method and the traditional low-pressure abrasive flow polishing method, the surface roughness of the workpiece decreased to7.87 nm and 10.53 nm, respectively. Furthermore, by starting at similar initial roughness values, the polishing time required to reduce the roughness to 12 nm was 3.5 h and 6 h, respectively. The experimental results demonstrated that CRAFP can satisfy the surface requirements of single-crystal silicon (R_a < 12 nm) and exhibit high polishing efficiency and good quality.     

Study on the effect of various machining speeds on the wafer polishing process

Silicon wafer polishing has an important role in semiconductor manufacturing; the general purpose of the polishing process is to produce a mirror-like surface. The wafer surface roughness is affected by many variables such as the carrier head unit characteristics, operation, platen and chuck speeds, pad and slurry ratios, and temperature. The optimum process conditions for the experimental temperature, down-force, slurry ratio, and processing time were determined in previous studies and used as fixed factors in this experiment. The main purpose of the present study was to determine how the different platen and chuck machining speeds influence the wafer surface roughness via the polishing process to obtain the optimum machining speed. In the results, the machining temperature appeared to differ at different machining speeds, which is a vital element with regard to wafer polishing.     

Research on unbounded abrasive polishing process with assisted ultrasonic vibration of workpiece

Ultrasonic-assisted machining was an effective method to improve the material removal quality especially to difficult-to-cut metal materials. The ultrasonic vibration was usually superimposed on the machining tool but seldom on the workpiece, although the ultrasonic vibration of workpiece could improve the processability of material more effectively. In this paper, a rectangle hexahedron ultrasonic sonotrode with optimized slots was developed as a platform to realize the assisted ultrasonic vibration of workpiece and the ultrasonic-assisted polishing process of austenitic stainless steel was also studied. The unbounded abrasive was selected as polishing medium, and the path compensation strategy of soft polishing tool was carried out for getting uniform polishing force. The orthogonal experiments were designed to study the optimization of ultrasonic polishing parameters and the relation between different types of ultrasonic polishing path and polishing quality. The results appear that the horizontal ultrasonic vibration of workpiece can reduce polishing force and improve polished surface roughness, which can also reinforce the proportion of plastic shear effect in the material removal process. The ultrasonic polishing path keeping consistent with workpiece vibration direction can get more uniform polishing force and better surface roughness. And the 45° oblique crossing ultrasonic path can get the maximum average polishing force reduction by 75.2 %.