Heteroepitaxy of CuInSe2 on {111}-oriented germanium

Thin films of CuInSe₂ were deposited onto {111}-oriented germanium substrates by flash evaporation and were investigated by reflection high energy electron diffraction. Epitaxial growth was found in the substrate temperature range 720–820 K. In all cases the epitaxial layers had the chalcopyrite structure except at growth temperatures higher than 795 K where the layers were cubic. Deposition of CuInSe₂ onto {111}-oriented germanium is characterized by one-dimensional epitaxy, and the epitaxial relationship for the chalcopyrite phase is given by {111}_Ge{112}_CuInSe2     

On the deformation behavior of single crystalline Fe---Al

Compression tests were performed on two single crystalline alloys with the B2 (CsCl) crystal structure, FeAl and Fe-45Al. Testing was done in air and test temperatures ranged from room temperature to 1273 K. Results show that limited {123} slip was produced in FeAl at low temperatures followed by the addition of {110} slip. {211} slip was produced in the Fe-45Al alloy up to 1073 K after which {110} slip was also observed. The flow stress vs. temperature curve of FeAl showed high compressive stresses up to 973 K followed by a large decrease in stress with increasing temperature. The flow stress versus temperature curve for Fe-45Al showed a very weak temperature dependence up to 973 K followed by a gradual decrease in stress with increasing temperature. Below 973 K, the flow stress values of Fe-45Al were calculated to be 50 to 60% of the values of FeAl.     

Effect of substrate temperature on the texture and structure of polycrystalline Si0.7Ge0.3 films deposited on SiO2 by molecular beam deposition

The evolution of microstructure and texture of molecular beam deposited Si_0.7Ge_0.3 films on SiO₂ at the deposition temperature range of 400–700°C was investigated by X-ray diffraction and transmission electron microscopy. At deposition temperatures between 400 and below 500°C, the films were directly deposited as a mixed-phase on SiO₂ and have a inversely cone-shaped structure. In this temperature range deposited as a mixed-phase, the grain size increases as the temperature increases, so that the grains not only grow up by deposition, but also laterally grow by the solid phase crystallization, furthermore, the texture is changed from a {110} texture to mixed {311} and {110} textures. At 500°C, the film was deposited as only a crystalline phase and has a columnar structure with a strong {110} texture. In the temperature range of 500–700°C, as the temperature increases, the {311} and {111} textures develop whereas the {110} texture reduces. The film deposited at 700°C has a random orientation and structure.     

残余碳对取向硅钢初次和二次再结晶的影响

研究了脱碳退火样品中的残余碳对取向硅钢初次和二次再结晶的组织和磁性能的影响。结果表明：随着脱碳退火样品中残余碳含量的提高,初次再结晶的平均晶粒尺寸减小,表层和中心层的晶粒尺寸差增大;初次再结晶的强{111}<110>或{111}<112>织构向强{112}<110>织构转变,部分1/4层的Goss晶粒或{111}<112>晶粒转变为其他取向的晶粒;残余碳含量超过0.0200%后,高温退火样品二次再结晶不完善,磁性能较差。相变是导致上述现象的主要原因。     

Strain effect in single-crystal silicon-based multilayer surface acoustic wave structures

A method for calculating the characteristics of surface acoustic wave (SAW) propagation in a deformable piezoelectric multilayer medium is presented. The effect of longitudinal and lateral mechanical strain on the SAW phase velocity in a (ZnO or AIN)/SiO₂/Si thin film structure for {001}, {111} and {110} silicon crystal planes within the temperature range 293–673 K is studied. The effects of thickness and internal mechanical stresses in the ZnO or A1N piezoelectric film and SiO₂ dielectric film on the sensitivity of the SAW phase velocity to strains in the structure are investigated. The Si{110}-based SAW structure with the SAW wavevector oriented in the 10 direction is shown to possess maximum operating frequency sensitivity to both longitudinal and lateral strain. The parameters of SAW structure stable to mechanical loads are determined. ZnO and SiO₂ layer deposition on silicon is shown to increase the SAW phase velocity sensitivity to longitudinal strain and to decrease its sensitivity to lateral strain in the structure.     

Etching characteristics of Ni3Al

Etched surfaces of Ni₃Al (γ′ phase) and mixtures of Ni₃Al and Ni (γ phase) have revealed a large variation in gray level for different grains depending upon their crystallographic orientation. A selected area electron channeling pattern study in the scanning electron microscope has shown that grains oriented near 001 etch light, while those oriented near 111 etch dark with a gradual transition for intermediate orientations. It is shown that the etching characteristics result from formation of {001} facets on the etched surface, which produces a nearly planar surface on {001} faces and microfaceted arrays of very small pyramidal projections having {001} facet planes on the {111} faces.     

The development of <100> texture in Fe-Cr-Co-Mo permanentmagnet alloys

The cold-rolled and recrystallization textures of Fe-Cr-Co-Mo permanent magnet alloys are described. The studied composition is Fe-30%Cr-15%Co-3%Mo (in wt.%). The cold-rolled texture can be considered to be {111}<110>, {111}<112>, {100}<110>, and {211}<110>, while the recrystallization texture can be considered to be {111}<100>, {110}<112>, {211}<110>, and {110}<110>. The secondary recrystallization is caused by heat-treating the alloys in the sequence of α, α+γ, α+γ+σ, α phase region. This results in a favorable texture of {110}<110> and <100> direction, aligning along the transverse direction (TD) of the strips. The best magnetic properties obtained in this study were 1.2 T (12.0 kG), iH _c=82.0 kAm^-1 (1025 Oe), and (BH)max= 60.8 kJm^-3 (7.6 MGOe) with TD alloys     

Interface structure at the large misfit, still common epitaxy β-FeSi2(101) or (110)//Si(111)

In this paper we compare the elastic energies obtained by tight-binding molecular dynamics simulations for several strained structures of β-FeSi₂, corresponding to the most frequent epitaxial relationships ‘on’ and ‘in’ silicon. Our results confirm that, for coherent interfaces, the very common β-FeSi₂(101) or (110)//Si(111) orientation generates a very large contribution to the elastic energy, due to the large misfit. Therefore, we suggest that the frequent nucleation of such epitaxial relationships in precipitates is provided by the correspondence of the two-dimensional crystal structure for the Si sites between Si(111) and β-FeSi₂(101) or (110). We show it to be maintained even after misfit relaxation in the silicon matrix, as simulated by a large-scale molecular dynamics run.     

Investigations of MX and γ′/γ″ precipitates in the nickel-based superalloy 718 produced by electron beam melting

Samples with a composition similar to the nickel-based superalloy Inconel alloy 718 were produced by electron beam melting of prealloyed powder and investigated with respect to type and composition of the strengthening precipitates. The matrix consists of γ grains orientated in nearly the same direction, almost like a single crystal. Coarse precipitates (<2 μm), mostly of the (Ti,Nb)(C,N,B) type with B1 structure, are aligned along the growth direction. TEM and APFIM investigations of the γ matrix revealed very fine γ″ precipitates of around 5–10 nm in size. Additionally, at small angle grain boundaries, coarser γ″ precipitates of 50–100 nm in size have been observed. The 0 01 γ//0 0 1 γ″ and {1 0 0} γ//{1 0 0} γ″ orientation relationship between γ and γ″, known from literature [M. Sundararaman, P. Mukhopadhyay, Mater. Charact. 31 (1993) 191–196], was confirmed. Some γ′ precipitates of 2–5 nm in size were observed by means of FIM.     

Structural and optical characterization of β-FeSi2 layers on Si formed by ion beam synthesis

Structural and optical properties have been investigated for surface β-FeSi₂ layers on Si(100) and Si(111) formed by ion beam synthesis using ⁵⁶Fe ion implantations with three different energies (140–50 keV) and subsequent two-step annealing at 600 °C and up to 915 °C. Rutherford backscattering spectrometry analyses have revealed Fe redistribution in the samples after the annealing procedure, which resulting in a Fe-deficient composition in the formed layers. X-ray diffraction experiments confirmed the existence of /gb-FeSi₂ by annealing up to 915 °C, whereas the phase transformation from the β to phase has been induced at 930 °C. In photoluminescence measurements at 2 K, both β-FeSi₂/Si(100) and β-FeSi₂/Si(111) samples, after annealing at 900–915 °C for 2 h, have shown two dominant emissions peaked around 0.836 eV and 0.80 eV, which nearly coincided with previously reported PL emissions from the sample prepared by electron beam deposition. Another β-FeSi₂/Si(100) sample has shown sharp emissions peaked at 0.873 eV and 0.807 eV. Optical absorption measurements at room temperature have revealed the allowed direct bandgap of 0.868–0.885 eV as well as an absorption coefficient of the order of 10⁴ cm⁻¹ near the absorption edge for all samples.     

挤压态6013-T4铝合金在动态冲击载荷下的变形行为及其微观机理

使用霍普金森压杆试验装置进行挤压态6013-T4铝合金的室温动态压缩实验,应变速率为1×10³~3×10³ s^-1。结果表明,6013-T4铝合金在动态压缩过程中表现出明显的应变硬化和正应变速率敏感性;随着应变和应变速率的提高位错密度增大,在高应变速率和大应变量变形后试样的位错塞积显著。在相同的变形条件下0°方向试样的应力总是最高,而45°方向试样的应力最低。挤压态6013-T4合金的主要织构类型为{112}<111>和{110}<111>。对于{112}<111>织构,0°、45°和90°方向的最大施密特因子分别为0.27、0.49和0.41。对于{110}<111>织构,最大施密特因子分别为0.27、0.43和0.41。0°方向的施密特因子最小,使该方向的应力水平较高。在相同的应变速率和应变量条件下动态压缩变形时,0°方向试样的位错密度更高。在冲击件的材料选择和结构设计中有必要考虑材料的应变速率敏感性、力学性能各向异性以及微观组织的演变。     

Influence of γ′ and grain boundary carbide on tensile fracture behaviors of Nimonic 263

Tensile fracture behaviors of Nimonic 263 after three different heat treatments have been investigated. Standard heat treatment produces 10% γ′ coupled with precipitate free zones (PFZs), and M₂₃C₆ carbide densely distributed at grain boundaries (GBs). Alternative heat treatment causes dense distribution of GB carbides and precipitation of 1–3% γ′ with the absence of PFZs. Solution-treated sample has neither γ′ nor M₂₃C₆ carbide. Room temperature tensile tests indicate both standard and alternative heat-treated samples show intergranular fracture, but the elongation of the latter is two times larger than that of the former. The combined effect of GB carbides and intensive slip bands accounts for the intergranular fracture. The γ′ volume fraction affects elongation. Solution-treated sample displays transgranular fracture mode. Lack of restriction to dislocation mobility in grains interior and the weak interaction between GBs and dislocations are responsible for the transgranular fracture. The effect of PFZs on fracture mode may be negligible.     

一维β-SiAlON材料可控合成

以Si粉、Al粉和Al₂O₃粉为原料压制成条样, 在1650~1850 K氮气和埋Si₃N₄颗粒气氛下分别合成了β-SiAlON晶须、带状和柱状晶, 并系统研究了一维β-SiAlON材料可控合成条件, 进而结合热力学分析了一维β-SiAlON材料的生长机制。结果表明: 以Si粉、Al粉和Al₂O₃为原料, 在氮气(纯度99.9%)和埋Si₃N₄颗粒气氛下在1650~1850 K保温6 h, 可以合成不同形貌的一维β-SiAlON材料。生长温度是一维β-SiAlON材料形貌控制的关键因素。生长温度为1650 K时, 合成了β-SiAlON晶须, 晶须直径200~400 nm, 长径比100~1000; 生长温度在1700~1800 K时, 可以合成β-SiAlON带状晶体, 厚度为200 nm, 宽度为1~4 μm, 长宽比在10~20之间; 生长温度升高至1800 K时, 出现大量柱状晶体。结合晶须显微结构形貌和热力学分析, β-SiAlON晶须的生长机制为气-固(VS)生长机制。     

Structural, dielectric and electrical conducting properties of CsB′B′′O6 (B′=Nb, Ta; B′′=W, Mo) ceramics

Polycrystalline samples of the defect pyrochlore-type CsB′B′′O₆ (B′=Nb, Ta; B′′=W, Mo) compounds were prepared by solid-state reaction technique. The formation of the compounds was checked by X-ray diffraction (XRD) method. All the compounds were found to have a cubic crystal structure at room temperature. Dielectric studies of the tungstate compounds, CsNbWO₆ and CsTaWO₆ indicated a small dielectric anomaly at (183±2) and (328±2) K, respectively, whereas the molybdate compounds, CsNbMoO₆ and CsTaMoO₆ did not exhibit such anomaly. The conductivity measurements indicated ionic transports (t_ion≥0.80) in the high temperature region (≥573 K).     

Dislocation structures on the plane of shear in compressed double-notch copper single crystal specimens

Dislocation structures in the zone of shear of double-notch copper single crystals, generated by a shear stress 20 MPa acting in the specimen axis ([110] direction) at 773 K were investigated by means of transmission electron microscopy. Dislocation configurations in different crystal planes of shear, and (001), were compared. The role of the 110{111} slip systems in the process of shear is assessed and possible indications of a direct glide of dislocations with Burgers vector b=a/2[110] in the mentioned compact and non-compact planes are presented.     

Study by resonant ultrasound spectroscopy of the elastic constants of the β phase in Cu---Al---Ni shape memory alloys

The evolution with temperature of the elastic constants of the metastable β phase in a Cu-27.96 at.%Al-3.62 at.% Ni shape memory alloy (SMA) has been studied by resonant ultrasound spectroscopy (RUS). The corresponding elastic constants of this cubic phase have been measured near the martensitic transformation temperature in a single crystal. Above the martensitic transformation temperature, an anomalous behavior has been found in the C′elastic constant which shows a softening as the temperature decreases. The internal friction value Q⁻¹ has been obtained in this temperature range from the RUS spectra. The mechanisms associated with the Q⁻¹ increase must be related to {1 1 0} shear.     

Synergetic effect of Re and Ru on γ/γ′ interface strengthening of Ni-base single crystal superalloys

The synergetic effect of Re and Ru on γ/γ′ interface strengthening of Ni-base SC superalloys has been investigated by performing DMol3 calculations. Results show that the synergetic effect of Re and Ru on the interface strengthening is better than that achieved by the individual Re or Ru due to Re-d/Ru-d, Re-d/Ni-d and Ru-d/Ni-d hybridizations. The electronic mechanism underlying the synergetic effect of Re and Ru on γ/γ′ interface strengthening is related to the charge transfer of electrons and the enhancement of d-bonding hybridization among Re---Ru, Re---Ni and Ru---Ni atoms.     

CaO-B2O3玻璃助烧的零膨胀系数β-锂霞石陶瓷的制备及性能研究

采用固相反应法制备CaO-B₂O₃玻璃（简称“CB”玻璃）助烧的零膨胀系数β-锂霞石陶瓷。通过差示扫描量热(DSC)、X射线衍射(XRD)、扫描电子显微镜(SEM)手段分别对CB玻璃的热学特性和助烧后的β-锂霞石陶瓷样品的物相与显微形貌进行表征。结果表明, CB玻璃具有良好的助烧效果, 可以显著降低β-锂霞石陶瓷的烧结温度(从1300℃降至1150℃), 并大幅提高陶瓷的相对密度(从93.3%提高到97.4%)。加入CB玻璃助烧剂, β-锂霞石陶瓷致密性显著提高, 内部无微裂纹存在。加入4wt%和6wt% CB玻璃的β-锂霞石陶瓷在室温~200℃范围内具有零膨胀系数, 分别为0.02×10^-6/K和0.4×10^-6/K。然而, 加入8wt% CB玻璃的β-锂霞石陶瓷样品中产生了具有高正膨胀系数的新物相LiAlO₂, 使样品的热膨胀系数提高至3.46×10^-6/K。     

Effect of γ′ precipitation during hot isostatic pressing on the mechanical property of a nickel-based superalloy

The effect of the precipitation of γ′ phase during hot isostatic pressing (HIPing) on the mechanical property of a nickel-based superalloy, GTD-111, was evaluated by conducting tensile and creep-rupture tests at 871 °C. In the 4-h two-step HIP process, the coupons were isostatically compressed (at 120 MPa) and heated to 1230 °C, well above the dissolution temperature of γ′ precipitates into the γ matrix, for the first 2 h, and cooled down to a temperature to induce the precipitation of γ′ phase and held for the last 2 h at 120 MPa or at ambient pressure. The precipitates were controlled in size by varying the temperature for the last half of the process. According to the result of the tensile test, the mechanical properties of the alloy were varied upon the microstructural evolution, and improved more than 40%, compared to those of the untreated ones. The precipitation of γ′ phase under high pressure further improved in the properties, suggesting that the precipitation of γ′ phase at high pressure provides an advantage for the rigidity of the structure. Based on these findings, a 6-h three-step HIP process was tried, and proved to be an effective substitute for the normal heat treatment, especially in terms of creep properties. This feature was mostly attributed to the homogenized microstructure of HIPed ones, as evidenced by the X-ray diffraction patterns.     

Low-temperature, direct synthesis of β-SiC by metal vapor vacuum arc ion source implantation

Crystalline β-SiC surface layers with strong (111) preferred orientation were synthesized by direct ion implantation into Si(111) substrates at a low temperature of 400°C using a metal vapor vacuum arc ion source. Both X-ray diffraction and Fourier transform infrared spectroscopy reveal an augment in the amount of β-SiC with increasing implantation doses at 400°C. Scanning electron microscopy shows the formation of an almost continuous SiC surface layer after implantation at 400°C with a dose of 7×10¹⁷/cm². The full width at half maximum of the X-ray rocking curve of β-SiC(111) was measured to be 1.4° for the sample implanted at a dose of 2×10¹⁷/cm² at 700°C, revealing a good alignment of β-SiC with the Si matrix.