Transparent conductive In2O3:Mo thin films prepared by reactive direct current magnetron sputtering at room temperature

An amorphous transparent conductive oxide thin film of molybdenum-doped indium oxide (IMO) was prepared by reactive direct current magnetron sputtering at room temperature. The films formed on glass microscope slides show good electrical and optical properties: the low resistivity of 5.9 × 10^− 4 Ω cm, the carrier concentration of 5.2 × 10²⁰ cm^− 3, the carrier mobility of 20.2 cm² V^− 1 s^− 1, and an average visible transmittance of about 90.1%. The investigation reveals that oxygen content influences greatly the carrier concentration and then the photoelectrical properties of the films. Atomic force microscope evaluation shows that the IMO film with uniform particle size and smooth surface in terms of root mean square of 0.8 nm was obtained.     

Cu2O thin films deposited by reactive direct current magnetron sputtering

The Cu₂O thin films were prepared on quartz substrate by reactive direct current magnetron sputtering. The influences of oxygen partial pressure and gas flow rate on the structures and properties of deposited films were investigated. Varying oxygen partial pressure leads to the synthesis of Cu₂O, Cu₄O₃ and CuO with different microstructures. At a constant oxygen partial pressure of 6.6 × 10^− 2 Pa, the single Cu₂O films can be obtained when the gas flow rate is below 80 sccm. The as-deposited Cu₂O thin films have a very high absorption in the visible region resulting in the visible-light induced photocatalytic activity.     

The effect of Nb substitution on synthesis and photo-response of TiO2 thin films prepared by direct current magnetron sputtering

TiO₂ has a limited photoefficiency for solar energy harvesting and conversion due to its large bandgap. Nb substitution into the TiO₂ lattice was investigated to red-shift its photoresponse by introducing defect energy levels in the host bandgap. Ti_1−xNb_yO₂ thin films (0 ≥ y ≤ 0.52) were prepared by direct current reactive magnetron sputtering. The effect of Nb concentration on crystal phase formation and subsequent change in optical and electronic properties were determined. Films had an increasing rutile proportion as Nb concentration increased, and all films prepared for y > 0.25 were pure rutile. Nb substituted as Nb(V) or a mixture of Nb(IV)/(V) while Ti remained Ti(IV). Therefore, in these materials cation vacancies formed to electronically compensate for group V doping. Nb-doped rutile films showed no red-shift in optical response while Nb-doped anatase/rutile composites were strongly red-shifted. Photocurrent measurements were made to determine if the enhanced visible light absorption generated mobile electron-hole pairs or was due to localized excitations at color centers. At low Nb concentrations (~ 2 at.%), visible light absorption generated mobile charge carriers, while at higher concentrations ( > 9 at.%), no mobile charge carriers were created. At higher Nb concentrations, the formation of mobile charge carriers was hindered by charge recombination at cation vacancies.     

Enhanced photocatalytic activity of silver nanoparticles modified TiO2 thin films prepared by RF magnetron sputtering

Ag-TiO₂ nanostructured thin films with silver volume fraction of 0–40% were prepared by RF magnetron sputtering. The microstructure, surface topography, and optical properties of the films were characterized by X-ray diffractometer, transmission electron microscope, and ultraviolet–visible spectrophotometer. Photocatalytic activity of the films was evaluated by light-induced degradation of methyl orange (C₁₄H₁₄N₃NaO₃S) solution using a high pressure mercury lamp as lamp-house. The relation of photocatalytic activity and silver content was studied in detail. It is found that silver content influences microstructure of TiO₂ thin films, and silver in the films is metallic Ag (Ag⁰). Photocatalytic activity of the films increases with increasing silver content up to 5 vol.% Ag and then decreases to values significantly still bigger than that of pure TiO₂ thin films. Silver nanoparticles significantly enhance the photocatalytic activity of TiO₂ films. The better separation between electrons and holes on silver modified TiO₂ thin films surface allowed more efficiency for the oxidation and reduction reactions. The enhanced photocatalytic activity was mainly attributed to the decrease of energy gap of the films and the increase of oxygen anion radicals O₂⁻ and reactive center of surface Ti³⁺ on silver modified TiO₂ thin films surface.     

Characterization of inhomogeneity in TiO2 thin films prepared by pulsed dc reactive magnetron sputtering

This article discusses an analytical method for characterizations of TiO₂ thin films and determinations of the degree of their inhomogeneity. The TiO₂ films were prepared by a pulsed dc magnetron sputtering with an operating pressure as a main experimental parameter. The obtained films were primarily characterized for film crystallinity, microstructures and optical properties by spectroscopic ellipsometry. The measured ellipsometric data were analyzed by the single-, the double, and the triple-layer models in order to match with the inhomogeneous film structure proposed in the Thornton structure zone model. The results were then compared with those obtained from grazing-incidence X-ray diffraction, field-emission scanning electron microscopy and high-resolution transmission electron microscopy. The study revealed that the pulsed dc sputtered TiO₂ films could be best described by the inhomogeneous triple-layer physical model. Although the films deposited at lower operating pressure had a dense structure with a mirror-like surface topography, the films deposited at higher operating pressure had the porous structure with the rough surface and the void.     

Al-doped ZnO thin films deposited by reactive frequency magnetron sputtering: H2-induced property changes

Al-doped ZnO (AZO) transparent conductive thin films have been prepared by radio-frequency magnetron sputtering with a ceramic target (98 wt.% ZnO, 2 wt.% Al₂O₃) in different Ar + H₂ ambient at a substrate temperature of 200 °C. To investigate the influence of H₂-flow on the properties of AZO films, H₂-flow was changed during the growth process with a fixed Ar-flow of 60 sccm. The results indicate that H₂-flow has a considerable influence on the transparent conductive properties of AZO films. The low resistivity in the order of 10^− 4 Ω cm and the high average transmittance more than 92% in the visible range were obtained for the samples prepared in the optimal H₂-flow range from 0.4 sccm to 1.0 sccm. In addition, the influence of H₂-flow on the structure and composition of AZO films have also been studied.     

Growth of FeSb2 thin films by magnetron sputtering

The detailed growth of FeSb₂ films formed on quartz (0001) substrates by magnetron sputtering is reported. FeSb₂ films with different orientations and compositions can be produced by adjusting the Ar working gas pressure and the substrate temperature. By employing FeSb₂ thin layers produced at different substrate temperatures as templates, < 101>-, < 120>- and < 002>-textured FeSb₂ films were produced under identical growth conditions. The thermoelectric properties of film samples grown at different temperatures were measured and the effects of Sb and FeSb impurities were investigated.     

Fluorine-doped ZnO transparent conducting thin films prepared by radio frequency magnetron sputtering

Fluorine-doped ZnO transparent conducting thin films were prepared by radio frequency magnetron sputtering at 150 °C on glass substrate. Thermal annealing in vacuum was used to improve the optical and electrical properties of the films. X-ray patterns indicated that (002) preferential growth was observed. The grain size of F-doped ZnO thin films calculated from the full-width at half-maximum of the (002) diffraction lines is in the range of 18-24 nm. The average transmittance in visible region is over 90% for all specimens. The specimen annealed at 400 °C has the lowest resistivity of 1.86 × 10^− 3 Ω cm, the highest mobility of 8.9 cm² V^− 1 s^− 1, the highest carrier concentration of 3.78 × 10²⁰ cm^− 3, and the highest energy band gap of 3.40 eV. The resistivity of F-doped ZnO thin films increases gradually to 4.58 × 10^− 3 Ω cm after annealed at 400 °C for 4 h. The variation of the resistivity is slight.     

Color control of emissions from rare earth-co-doped La2O3:Bi phosphor thin films prepared by magnetron sputtering

Multicolor photoluminescence (PL) and electroluminescence (EL) were observed from developed Bi- and rare earth (RE)-co-doped La₂O₃ (La₂O₃:Bi,RE) phosphor thin films. The phosphor thin films were prepared with various contents of co-doped RE, such as Dy, Er, Eu, Tb and Tm, by a combinatorial radio frequency magnetron sputtering deposition method. The obtainable luminance in EL and PL intensities changed considerably as the kind and content of RE were varied. Color changes from blue and blue-green to various colors in PL and EL emissions, respectively, were obtained in postannealed La₂O₃:Bi,RE phosphor thin films: films prepared by co-doping Bi at a constant content with various REs at varying levels of content. However, all of the observed emission peaks in PL and EL from La₂O₃:Bi,RE phosphor thin films were assigned to either the broad emission originating from the transition in Bi³⁺ or the visible emission peaks originating from the transition in the co-doped trivalent RE ion. The difference between PL and EL characteristics in La₂O₃:Bi,RE phosphor thin films is mainly attributed to the difference in the excitation mechanism.     

Photo-fixation of SO2 in nanocrystalline TiO2 films prepared by reactive DC magnetron sputtering

We report on photo-fixation of SO₂ onto nanostructured TiO₂ thin films prepared by reactive DC magnetron sputtering. The films were exposed to 50 ppm SO₂ gas mixed in synthetic air and illuminated with UV light at 298 and 473 K. The evolution of the adsorbed SO_x species was monitored by in situ Fourier transform infrared specular reflection spectroscopy. Significant photo-fixation occurred only in the presence of UV illumination. The SO₂ uptake was dramatically enhanced at elevated temperatures and then produced strongly bonded surface-coordinated SO_x complexes. The total SO_x uptake is consistent with Langmuir adsorption kinetics. The sulfur doping at saturation was estimated from X-ray photoelectron spectroscopy to be ~ 2.2 at.% at 473 K. These films were pale yellowish and had an optical absorption coefficient being ~ 3 times higher than in undoped film. The S-doped films exhibit interesting oleophobic properties, exemplified by the poor adherence of stearic acid. Our results suggest a new method for sulfur doping of TiO₂ to achieve combined anti-grease and photocatalytic properties.     

New transparent conducting MgIn2O4---Zn2In2O5 thin films prepared by magnetron sputtering

New materials for a transparent conducting oxide film are demonstrated. Highly transparent Zn₂In₂O₅ films with a resistivity of 3.9 × 10⁻⁴ Ω cm were prepared on substrates at room temperature using a pseudobinary compound powder target composed of ZnO (50 mol.%) and In₂O₃ (50 mol.%) by r.f. magnetron sputtering. MgIn₂O₄---Zn₂In₂O₅ films were prepared using MgIn₂O₄ targets with a ZnO content of 0–100 wt.%. The resistivity of the deposited films gradually decreased from 2 × 10⁻³ to 3.9 × 10⁻⁴ Ω cm as the Zn/(Mg + Zn) atomic ratio introduced into the films was increased. The greatest transparency was obtained in a MgIn₂O₄ film. The optical absorption edge of the films decreased as the Zn/(Mg + Zn) atomic ratio was increased, corresponding to the bandgap energy of their materials. It was found that the resistance of the undoped Zn₂In₂O₅ films was more stable than either the undoped MgIn₂O₄, ZnO or In₂O₃ films in oxidizing environments at high temperatures.     

Fabrication and characterization of Fe3O4 thin films deposited by reactive magnetron sputtering

Fe-O thin films with different atomic ratio of iron to oxygen were deposited on glass and thermally oxidized silicon substrates at temperatures of 300, 473 and 593 K, by reactive magnetron sputtering in Ar+O₂ atmosphere. The composition and structure of the thin films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and electrical resistivity. It was found from XRD that with increasing the oxygen partial pressure in the working gas, the crystalline structure of the Fe-O films deposited at the substrate temperature of 473 K gradually changed from α-Fe, amorphous Fe-O, Fe₃O₄, γ-Fe₂O₃ to Fe_21.34O₃₂. The structure and chemical valence of the Fe₃O₄ films were analyzed by electron microscopy and XPS, respectively.     

Enhanced ferroelectric properties of Pb(Zr0.80Ti0.20)O3/PbO thin films prepared by radio frequency magnetron sputtering

The Pb(Zr_0.80Ti_0.20)O₃ (PZT) thin films with and without a PbO buffer layer were deposited on the Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by radio frequency (rf) magnetron sputtering method. The PbO buffer layer improves the microstructure and electrical properties of the PZT thin films. High phase purity and good microstructure of the PZT thin films with a PbO buffer layer were obtained. The effect of the PbO buffer layer on the ferroelectric properties of the PZT thin films was also investigated. The PZT thin films with a PbO buffer layer possess better ferroelectric properties with higher remnant polarization (P_r = 25.6 μC/cm²), and lower coercive field (E_c = 60.5 kV/cm) than that of the films without a PbO buffer layer (P_r = 9.4 μC/cm², E_c = 101.3 kV/cm). Enhanced ferroelectric properties of the PZT thin films with a PbO buffer layer is attributed to high phase purity and good microstructure.     

Photocatalytic properties of Au/TiO2 thin films prepared by RF magnetron co-sputtering

Au/TiO₂ thin films with various Au doping contents were deposited on quartz substrates by radio frequency (RF) magnetron co-sputtering. The as-deposited Au/TiO₂ films were characterized by energy-dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), XRD, and UV-vis techniques. Au doping and UV treatment enhanced the photocatalytic efficiency of TiO₂ thin films. The optimal RF power of the Au target and UV treatment time were 5 W and 1 h, respectively. The enhanced photoactivity of Au(5 W)/TiO₂ thin films with UV treatment is found to result from the increased hydroxyl concentration.     

Comparison of hydrophilic properties of TiO2 thin films prepared by sol-gel method and reactive magnetron sputtering system

This article reports on preparation, characterization and comparison of TiO₂ films prepared by sol-gel method using the titanium isopropoxide sol (TiO₂ coating sol 3%) as solvent precursor and reactive magnetron sputtering from substoichiometric TiO_2 − x targets of 50 mm in diameter. Dual magnetron supplied by dc bipolar pulsed power source was used for reactive magnetron sputtering. Depositions were performed on unheated glass substrates. Comparison of photocatalytic properties was based on measurements of hydrophilicity, i.e. evaluation of water contact angle on the film surface after UV irradiation. It is shown, that TiO₂ films prepared by the sol-gel method exhibited higher hydrophilicity in the as-deposited state but has significant deterioration of hydrophilicity during aging, compared to TiO₂ films prepared by magnetron sputtering. To explain this effect AFM, SEM and high resolution XPS measurements were performed. It is shown that the deterioration of hydrophilicity of sol-gel TiO₂ films can be suppressed if as-deposited films are exposed to the plasma of microwave oxygen discharge.     

Microanalysis of Pd and V-doped TiO2 thin films prepared by sputtering

Thin films of TiO₂ doped with vanadium and palladium, prepared by the magnetron sputtering method, were studied by means of X-ray diffraction (XRD), Scanning Electron Microscopy with Energy Disperse Spectrometer (SEM-EDS) and Atomic Force Microscopy (AFM). Investigations have brought important information about microstructure due to dopant incorporation in the TiO₂ host lattice. Directly after deposition thin films were XRD-amorphous and SEM investigations did not reveal details on the microstructure. Analysis of the topography of prepared thin films required application of Atomic Force Microscope. The AFM images show that as-deposited sample was dense with grain sizes varied in the range of 5.5 nm-10 nm, that indicated high quality nanocrystalline behavior. Additional annealing results in the formation of three phases in the thin film, e.g. (Ti,V)O₂ — solid solution, PdO and metallic inclusions of Pd. SEM-EDS system allowed analysis of the elemental composition, especially the V one, which lines have not been evidenced in the XRD diffraction pattern. EDS maps show homogenous distribution of elements Ti, O, V, Pd in prepared thin films.     

Composite SiOx/hydrocarbon plasma polymer films prepared by RF magnetron sputtering of SiO2 and polyethylene or polypropylene

Composite SiO_x/hydrocarbon plasma polymer films have been prepared by RF sputtering of silica and hydrocarbon polymer (polyethylene (PE) or polypropylene (PP)) targets placed on two balanced magnetrons. The morphology and composition of the composite films have been analysed by means of AFM, RBS/ERDA, FTIR, and XPS. The obtained films demonstrated wide range of wettability and hardness in dependence on the preparation conditions. When the ratio of RF powers delivered to the individual targets P_SiO2/P_PE(P_PP) changed from 0.1 to 10 the static contact angles of water varied from 75° to 25° and from 80° to 33° for composite films obtained from PE and PP, respectively. The hardness of the composite films varied from 2400 to 3400 N/mm² and from 1600 to 2000 N/mm² for the above-mentioned cases, respectively. Peculiar properties of the composite SiO_x/hydrocarbon plasma polymer films have been discussed with respect to the elemental composition and nature of the chemical bonds established on the surface of the films.     

Photocatalytic Zn-doped TiO2 films prepared by DC reactive magnetron sputtering

Zn-doped TiO₂ films were prepared by means of pulsed DC reactive magnetron sputtering method using Ti and Zn mixed target. The deposition condition was optimized to produce uniform and transparent TiO₂ films. Titanium was in the Ti⁴⁺ oxidation state in all Zn-doped TiO₂ films. The zinc oxide deposited on the substrate was in the fully oxidized state of ZnO. Increase of zinc concentration inhibited the crystal growth in the TiO₂ films. The surface morphology gradually changed from crystalline to amorphous along with the increase of doped zinc concentration. The optical transmittances of these films decreased only slightly with increasing zinc concentration due to very similar band edges of ZnO and anatase TiO₂. The doped ZnO had weak influence on light absorption of the TiO₂ films. When zinc concentration was very low (<1 at%), the photocatalytic activities of the doped films had nearly no difference from that of pure TiO₂ film. Photocatalytic activities decreased obviously in the films containing high amount of zinc oxide.     

Photocatalytic performance of very thin TiO2/SnO2 stacked-film prepared by magnetron sputtering

TiO₂/SnO₂ stacked-layers are synthesized by reactive sputter deposition on the glass substrate. Very thin TiO₂/SnO₂ bilayer-photocatalysts exhibited a very high photocatalytic activity for a degradation of gaseous acetaldehyde. Both the control of an electronic structure of TiO₂ overlayer in the near-surface region and the interfacial separation of photogenerated electrons/holes in the TiO₂/SnO₂ stacked-layer are keys to improve the photocatalytic performance.     

Al-Mg-B thin films prepared by magnetron sputtering

Hard, nanocomposite aluminum magnesium boride thin films were prepared on Si (100) substrates with a three target magnetron sputtering system. The films were characterized by X-ray diffraction, atomic force microscope, electron micro-probe, Fourier transform infrared spectroscopy and nanoindentation. The results show that the maximum hardness of the as-deposited films is about 30.7 GPa and these films are all X-ray amorphous with smooth surfaces. The influences of substrate temperature and boron sputtering power on the quality of the films are discussed. From the results of this work, magnetron sputtering is a promising method to deposit Al-Mg-B thin films.