基于配电网自动化技术的探讨

随着数据采集与控制、地理信息系统等网络新技术的引进,配电自动化系统就开始逐步向配网智能化阶段方向发展。本文探讨了配电网自动化的相关技术,在基于配电网自动化技术的基础上描述了DAS的基本结构,并分析了其结构的组成,然后重点介绍了CSDA的DAS的技术表征,分析了CSDA的技术架构、馈线自动化管理与保护、故障隔离与恢复供电、分布式小电流接地保护、分布式无功电压、瞬时性故障识别功能的FTU 、CSDA配电中心主站系统,希望通过这一分析进一步推进配电网的自动化发展。     

关于自动化技术在配网设计中的应用

配电自动化系统作为配电网建设的重要组成部分,不仅能提高电网供电的安全性、可靠性和经济性,改进和优化电能质量,极大程度为用户提供优质服务,而且还能有效的降低配电系统的运行成本,减小工作人员的工作强度。本文在阐述配电网发展现状的基础上,首先分析了自动化技术在配电网建设中的必要性,其次介绍了配电网馈线自动化技术及其常见故障处理方法,然后以CSDA配电自动化系统为例,对配电网自动化技术进行分析,最后提出加强配电网自动化技术应用的几点建议。     

基于配电网络的数据采集与控制的自动化技术研究

一、引言伴随着经济的飞速发展,人们对供电质量和可靠性的追求也不断提高,而电网的波动与瞬间短路都会带来极大的经济损害,配电网的自动化技术就是在这一背景下发展而来的,当前DAS(配电自动化系统)引入了SCA-DA(配电网络的数据采集与控制)、GIS(地理信息系统)等后其发展进入了智能化阶段。     

智能电网中的配电自动化技术应用

阐述配电自动化系统的特点,它由终端层、子站层、主站层构成,分析智能电网中的配电自动化技术,包括微电网技术、可视化技术、分布式能源接入技术、光纤IP网络通信技术、配用电互动技术、配电网广域测控技术。     

县级供电企业配电网自动化通信技术的选择

配电自动化技术是服务于城乡配电网建设的重要技术,而通信技术是配电自动化的关键。传统配电网的保护及结构,包括管理运行方式都不适应现代电力市场需要。自动化通信技术在如今的电力市场中对提高电网运行及经济效益有着重大的意义。因此,本文通过对县级供电企业配电网自动化通信难点及其问题分析,为优化及更好的选择县级供电企业配电网自动化通信技术进行了探索。     

智能配电网的光通信方案探讨和分析

首先,分析了配电网网架结构和智能配电网中配电自动化系统的业务特性对配电通信网的需求,结合实际工程应用的可行性,探讨了相应的光通信方案.然后,通过对比EPON技术和光纤工业以太网技术,研究这两项技术在智能配电网中对配电自动化系统的适应性.最后,介绍了某市基于光纤工业以太网的智能配电网实际应用案例.     

配电自动化技术在配电网建设中的应用

文章阐述了配电自动化技术的概念、特点,分析了其在配电网建设中的作用,提出了配电网建设中配电自动化技术的应用要点,并对配电自动化技术应用可能存在的问题进行了探讨,如网络安全与隐私风险、技术兼容性问题等。研究表明,配电自动化为配电网建设提供了重要支撑,但也需要关注其应用过程中可能存在的风险,以实现其在配电网中的有效应用。     

基于EPON的电力配电通信网技术

配电通信网是智能配电自动化系统的信息基础,是数据自动化采集的主要手段,为智能配电网络的实现做好奠基。文章结合配电网络的需求以及实际情况,进行分析,论证常用的组网技术的优缺点,选择合理的配电通信网建设方案,分析当前典型"手拉手"保护式配电网。     

探讨智能配电网和配电自动化

随着用户对配电网的供电需求不断增大,智能配电网的研究和发展成为新时代的研究热点和发展方向,智能配电网的发展带动了整个电力系统的升级和进步,配电自动化系统是智能配电网的重要组成部分,目前我国正着手发展高级配电自动化技术,本文主要介绍智能配电网及配电自动化的功能和联系,研究和阐述了高级配电技术在我国智能电网中的发展和应用。     

智能配电网广域测控系统及其保护控制应用技术

现阶段,伴随着大量分布式电源的接入以及对供电运行效率和质量要求的不断提高,配电网保护控制工作也迎来了一全新的挑战。基于新形势,传统的控制与保护技术逐渐暴露出了愈来愈多的缺陷及不足,基于此,也就迫切需要实现配电网测控系统及其保护控制技术的有效革新,从而更好的满足时代发展需求,推动我国配电事业的良好发展。本文主要提出了一套广域测控系统,并对其相关技术进行了简要的分析,以希望能够对后期的相关工作有所指导。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.