Control of Microstructure and Orientation in Solution-Deposited BaTiO3 and SrTiO3 Thin Films

Columnar and highly oriented (100) BaTiO₃ and SrTiO₃ thin films were prepared by a chelate-type chemical solution deposition (CSD) process by manipulation of film deposition conditions and seeded growth techniques. Randomly oriented columnar films were prepared on platinum-coated Si substrates by a multilayering process in which nucleation of the perovskite phase was restricted to the substrate or underlying layers by control of layer thickness. The columnar films displayed improvements in dielectric constant and dielectric loss compared to the fine-grain equiaxed films that typically result from CSD methods. Highly oriented BaTiO₃ and SrTiO₃ thin films were fabricated on LaAlO₃ by a seeded growth process that appeared to follow a standard "two-step" growth mechanism that has been previously reported. The film transformation process involved the bulk nucleation of BaTiO₃ throughout the film, followed by the consumption of this matrix by an epitaxial overgrowth process originating at the seed layer. Both BaTiO₃ and PbTiO₃ seed layers were effective in promoting the growth of highly oriented (100) BaTiO₃ films. Based on the various processing factors that can influence thin film microstructure, the decomposition pathway involving the formation of BaCO₃ and TiO₂ appeared to dictate thin film microstructural evolution.     

Physical and Dielectric Properties of (1–x)PbZrO3·xBaTiO3 Thin Films Prepared by Chemical Solution Deposition

Physical and dielectric properties of (1– x )PbZrO₃· x BaTiO₃ thin films prepared by a chemical coating process have been investigated as a function of BaTiO₃ ( x ) content (0≤ x ≤0.2). Changing the molar ratio between propylene glycol and water prior to the deposition optimized the chemical precursors. (1– x )PbZrO₃- x BaTiO₃ thin films that contained a majority of perovskite phase, but also contained large amounts of other phases, were fabricated. These films could withstand fields of 250 kV/cm at 1 kHz. The microstructure of the thin films was found to depend on the BaTiO₃ content. The phase transition from antiferroelectric to ferroelectric was gradually induced as the BaTiO₃ content increased. A maximum dielectric constant of ∼809 was obtained at the composition of x = 0.1. A maximum dielectric constant of ∼809 was obtained at the composition of x = 0.1. A thin film at the low-field antiferroelectric-ferroelectric phase boundary with x = 0.05 exhibited the highest P _sat and P _r values. The maximum values of these were 45 and 31 μC/cm², respectively.     

Structural and Optical Properties of Sol–Gel-Derived Au/BaTiO3 Nanocomposite Thin Films

Au/BaTiO₃ nanocomposite thin films with different Au concentrations were prepared by a sol–gel process. The films were characterized using X-ray diffraction, thermal analyses, X-ray absorption spectroscopy, UV-vis spectroscopy, and transmission electron microscopy. The effects of Au concentration and annealing temperature on the structural and optical properties of composite films were investigated. Gold doping lowered the crystallization temperature of as-synthesized amorphous BaTiO₃ and enhanced its crystallinity in post-deposition annealing. The Au–BaTiO₃ interface was also investigated and no alloying occurred between Au and BaTiO₃. The evolution of Au surface plasmon resonance spectra with increasing annealing temperature was observed in the 10 mol% Au/BaTiO₃ thin films. The variations of band-gap energy for Au/BaTiO₃ films were also discussed.     

Electrophoretic Deposition and Characterization of Micrometer-Scale BaTiO3 Based X7R Dielectric Thick Films

Uniform and relatively dense BaTiO₃ thick films of 1–5 μm were prepared by an electrophoretic deposition process using submicrometer BaTiO₃ powders (mean particle size: ∼0.2 μm). Two different BaTiO₃ powders and solvent media were used to investigate the film quality and thickness control. The surface charge mechanism of BaTiO₃ particles was explained according to the observed results. The microstructures were examined by means of SEM. The experimental results show that the thickness could be controlled independently of suspension concentration by keeping a constant applied voltage and a constant current drop in a given suspension. BaTiO₃ thick films have good insulation resistance and dielectric properties such as a dielectric constant and a dissipation factor that are compatible with the data from conventional tape-cast BaTiO₃ thin layers.     

Gold-Particle-Enhanced Crystallite Growth of Thin Films of Barium Titanate Prepared by the Sol-Gel Process

The effects of gold-particle incorporation on the structure of barium titanate (BaTiO₃) thin films was investigated. BaTiO₃ thin films (110 nm thick) with different gold concentrations were prepared via sol-gel processing and analyzed using X-ray diffractometry. The diffraction results showed that the crystal structure of the thin films changed from predominantly the cubic phase to the tetragonal phase, and the crystallite size increased as the gold concentration increased. Possible mechanisms for the gold-enhanced crystallization have been discussed.     

In–Situ Transmission Electron Microscopy Crystallization Studies of Sol–Gel-Derived Barium Titanate Thin Films

Barium titanate (BaTiO₃) thin films that were derived from methoxypropoxide precursors were deposited onto (100) Si, Pt/Ti/SiO₂/(100) Si, and molecular-beam-epitaxy-grown (MBE-grown) (100) BaTiO₃ on (100) Si substrates by spin coating. The crystallization behavior of the amorphous-gel films was characterized using in-situ transmission electron microscopy heating experiments, glancing-angle X-ray diffraction, and differential thermal analysis/thermogravimetric analysis. Amorphous-gel films crystallized at a temperature of ∼600°C to an intermediate nanoscale (5–10 nm) barium titanium carbonate phase, presumably BaTiO₂CO₃, that subsequently transformed to nanocrystalline (20–60 nm) BaTiO₃. Random nucleation in the bulk of the gel film was observed on all substrates. In addition, oriented growth of BaTiO₃ was concurrently observed on MBE-grown BaTiO₃ on (100) Si. High-temperature decomposition of the intermediate carbonate phase contributed to nanometer-scale residual porosity in the films. High concentrations of water of hydrolysis inhibited the formation of the intermediate carbonate phase; however, these sols precipitated and were not suitable for spin coating.     

Raman Spectroscopy of Ferroelectric Thin Films and Superlattices

Recent results of Raman spectroscopy studies of lattice dynamics and phase transitions in ferroelectric thin films and superlattices are reviewed. Raman studies of SrTiO₃, BaTiO₃, and Ba _x Sr_{1− x} TiO₃ thin films in comparison with corresponding single crystals are presented; essential differences in the lattice dynamics behavior of thin films and single crystals are discussed. Application of ultraviolet Raman spectroscopy for studies of nanoscale ferroelectric heterostructures, such as BaTiO₃/SrTiO₃ superlattices, is demonstrated.     

Preparation of a Monodispersed Suspension of Barium Titanate Nanoparticles and Electrophoretic Deposition of Thin Films

A transparent and stable monodispersed suspension of nanocrystalline barium titanate was prepared by dispersing a piece of BaTiO₃ gel into a mixed solvent of 2-methoxyethanol and acethylacetone. The results of high-resolution transmission electron microscopy (HR-TEM) and size analyzer confirmed that the BaTiO₃ nanoparticles in the suspension had an average size of ∼10 nm with a narrow size distribution. Crystal structure characterization via TEM and X-ray diffraction indicated BaTiO₃ nanocrystallites to be a perovskite cubic phase. BaTiO₃ thin films of controlled thickness from 100 nm to several micrometers were electrophoretic deposited compactly on Pt/Ti/SiO₂/Si substrates. The deposited thin film had uniform nanostructure with a very smooth surface.     

Effect of the Atomic Ratio of Ba to Ti on Optical Properties of Gold-Dispersed BaTiO3 Thin Films

Gold-dispersed BaTiO, thin films were prepared by the rf magnetron sputtering method. The atomic ratio of Ba to Ti in the films was varied and the effects on the linear and nonlinear optical properties were investigated. As the atomic ratio increased, the value of χ⁽³⁾/α₅₃₂ for the gold-dispersed BaTiO₃ thin films slightly increased. It was found that the increase in the value of χ⁽³⁾/α₅₃₂ is due mainly to a change in the crystalline state of the BaTiO₃ matrix. However, it was also found that the atomic ratio had a smaller effect on the value of χ⁽³⁾/α₅₃₂ than did the refractive index of the matrix.     

Self-Mending of Microcracks in Barium Titanate Glass-Ceramic Thin Films with High Dielectric Constant

BaTiO₃ glass-ceramic thin films were deposited on silicon substrates by the sol–gel method. The films exhibited a mixed structure of glass phase and BaTiO₃ grains tens of nanometers in diameter, and had a high dielectric constant, low leakage current, and dielectric loss. An interesting self-mending phenomenon for microcracks due to the fluidity of the glass phase during the annealing process was observed in the films. The effects of the existence of the self-mended microcracks on electrical properties were evaluated. Our experimental results indicate the potential value of BaTiO₃ glass-ceramic thin films for integrated high-dielectric-constant media.     

The Effect of Texture and Microstructure on the Macroscopic Properties of Polycrystalline Piezoelectrics: Application to Barium Titanate and PZN–PT

The effects of crystallographic texture and microstructure are analyzed for polycrystalline tetragonal BaTiO₃, pseudotetragonal PZN–PT, and cubic BaTiO₃. For tetragonal BaTiO₃ and pseudotetragonal PZN–PT, we demonstrate that a high anisotropy of the single-crystal properties induces an apparent enhancement in the macroscopic piezoelectric response. For tetragonal BaTiO₃, the predicted macroscopic piezoelectric constants d ₃₁ and d ₃₃ are enhanced with respect to its single-crystal value at the expense of the spatial contributions from d ₁₅. For samples possessing fiber texture, an optimal response is predicted for samples that are not perfectly textured. Similarly, an apparent enhancement of the macroscopic value of d ₁₅ is predicted for PZN–PT. For cubic BaTiO₃, the low anisotropy of the underlying crystal properties induces a uniform decrease of the macroscopic electrostrictive constant, Q ₁₁, with decreasing texture. A completely random polycrystal provides 0.85±0.05 times its single-crystal response.     

Preparation of Barium Titanate Films at 55°C by an Electrochemical Method

Work by previous investigators has shown that BaTiO₃ films can be synthesized from solution over temperature ranges from 80°C to greater than 200°C. In the present work, electrically insulating crystalline films of BaTiO₃ have been electrochemically deposited on titanium substrates at temperatures as low as 55°C. Auger spectroscopic analyses with depth profiling indicate that a titanium oxide layer whose thickness is governed by current density acts as a precursor to BaTiO₃. Formation of BaTiO₃ is found to be favored only in highly alkaline solutions. This is consistent with the phase stability reported for the Ba─Ti─CO₂─H₂O system at 25°C. Lower processing temperatures (55°C) favor the formation of thick, electrically resistive, and wellcrystallized BaTiO₃ films, apparently due to increased oxygen solubility in the electrolyte solution. Films produced at 100°C are much thinner and are electrically conductive due to fissures and pores in their microstructure. Initial studies on the effect of current density indicate the formation of thinner and porous films with thicker titanium oxide intermediate layers.     

Structure Evolution in Hydrothermally Processed (<100°C) BaTiO3 Films

Thin films of cubic BaTiO₃ were processed hydrothermally at 40°–80°C by reacting thin layers of titanium organo metallic liquid precursors in aqueous solutions of either Ba(OH)₂ or a mixture of NaOH and BaCl₂. All films (thickness ∼1 μm) were polycrystalline with grain sizes ranging from nano- to micrometer dimensions. BaTiO₃ formation was facilitated by increasing [OH^-], [Ba²⁺], and the temperature. The film structure was related to the nucleation and growth behavior of the BaTiO₃ particles. Films processed at relatively low [OH^-], [Ba²⁺], and temperatures were coarse grain and opaque, but increasing [OH^-], [Ba²⁺], and temperature caused the grain size to decrease, resulting in transparent films.     

Fabrication of Barium Titanate Single Crystals by Solid-State Grain Growth

BaTiO₃ single crystals were prepared by solid-state grain growth. The single crystals were obtained by seeding a poly-crystalline, TiO₂-excess BaTiO₃, which exhibited abnormal grain growth. The condition for single-crystal growth was essentially dependent on the grain growth behavior of the polycrystalline, sintered bodies. The annealing temperature suitable for the single-crystal growth was just below the critical temperature of abnormal grain growth in TiO₂-excess BaTiO₃, which is about 1300°C.     

Preparation of a Barium Titanate Thin Film on a Porous Titanium Body by the Hydrothermal-Electrochemical Method

The electrolysis profile of the hydrothermal-electrochemical method that was used to grow BaTiO₃ thin films uniformly on porous titanium bodies 5.0 mm in diameter and 1.0-2.5 mm thick, with 32.7 vol% porosity, in an aqueous solution of Ba(OH)₂ at 150°C, was investigated. The thin films could be grown only in a surface region that was limited to a depth of lessthan equal to0.25 mm into the porous titanium body via a "single-step" electrolysis, in which an anodic potential was applied continuously to the porous titanium body. In contrast, the thin films could be grown uniformly on the entire surface of the porous titanium body using a "cyclic" electrolysis, in which an anodic potential and a rest potential were applied alternately. The BaTiO₃ film growth inside the porous titanium body is considered to be dominated by the local solution pH.     

Templated Grain Growth of Barium Titanate Single Crystals

BaTiO₃ single crystals were grown via templated grain growth (TGG), which is a process in which a single-crystal "template" is placed in contact with a sintered polycrystalline matrix and then heated to migrate the single-crystal boundary into the matrix. Millimeter-sized, stoichiometric single crystals of BaTiO₃ were produced by heating polycrystalline matrix with a relative density of 97% and a Ba/Ti ratio of <1.00, which was bonded to a BaTiO₃ single crystal, at temperatures above the eutectic temperature. Growth rates of 590–790, 180–350, and 42–59 μm/h were observed for {111}-, {100}-, and {110}-oriented single-crystal templates, respectively. Lower-surface-energy facets were formed for {111}- and {100}-oriented templates, whereas {110} crystals maintained a {110} growth front, which indicated that this plane orientation was the lowest-energy surface in this system. SrTiO₃ also was shown to be a suitable substrate for TGG of BaTiO₃.     

Preparation of Ba2YCu3O7-δ Thin Films with Preferred Orientation through an Organometallic Route

Superconducting Ba₂YCu₃O_7-δ thin films were prepared through an organometallic route. Single-phase Ba₂YCu₃O_7-δ thin films with preferred orientation were successfully prepared on SrTiO₃ (100) single-crystal substrates at 800°C by a dip coating method using partially hydrolyzed Ba-Y-Cu organometallic solutions. Preferentially oriented Ba₂YCu₃-O_7-δ thin films were also prepared on MgO (100) substrates. By controlling the partial hydrolysis conditions, a coating solution for precursor thin films was kept accurately at the stoichiometric composition. The use of ozone gas during the pyrolysis of the precursor thin films was found to suppress the formation of BaCO₃. Ba₂YCu₃O_7-δ thin films with c -axis orientation perpendicular to a SrTiO₃ (100) substrate, which were heat-treated at 900°C for 15 min, exhibited a superconductivity transition with an onset of 90 K and an end of 75 K.     

Grain-Boundary Migration and Dielectric Properties of Semiconducting SrTiO3 in the SrTiO3-BaTiO3-CaTiO3 System

Chemically induced grain-boundary migration and its effects on the interface and dielectric properties of semiconducting SrTiO₃ have been investigated. Strontium titanate specimens that had been doped with 0.2 mol% of Nb₂O₅ were sintered in 5H₂/95N₂. The sintered specimens were diffusion annealed at 1400°C in 5H₂/95N₂ with BaTiO₃ or 0.5BaTiO₃-0.5CaTiO₃ (mole fraction) packing powder. The grain boundaries of the annealed specimens were oxidized in air. In the case of BaTiO₃ packing, grain-boundary migration occurred with the diffusion of BaTiO₃ along the grain boundary. The effective dielectric constant of the specimen decreased gradually as the temperature increased but showed two peaks, possibly because of barium enrichment at the grain boundary and an oxidized Sr(Ba)TiO₃ layer. In the case of 0.5BaTiO₃-0.5CaTiO₃ packing, although barium and calcium were present at the grain boundary of the specimen, no boundary migration occurred, as in a previous investigation. With the diffusion of barium and calcium, the resistivity of the specimen increased and the variation of the effective dielectric constant with temperature was much reduced, in comparison to those without solute diffusion. These enhanced properties were attributed to the solute enrichment and the formation of a thin diffusional Sr(Ba,Ca)TiO₃ layer at the grain boundary.     

Grain Growth Control and Solid-State Crystal Growth by Li2O/PbO Addition and Dislocation Introduction in the PMN–35PT System

Grain growth behavior and solid-state single crystal growth (SSCG) in the Pb(Mg_1/3Nb_2/3)O₃–35 mol% PbTiO₃ (PMN–35PT) system have been investigated with varying Li₂O/PbO ratios. The effect of dislocation density on crystal growth has also been studied. For SSCG, a BaTiO₃ single-crystal seed was embedded in a polycrystalline PMN–PT matrix. During annealing, a PMN–PT single crystal grew from the seed at the cost of the small matrix grains. Addition of Li₂O dopant first enhanced and then reduced abnormal grain growth in the matrix. In the 2 mol% Li₂O and 6 mol% PbO excess PMN–PT samples annealed at 1200°C, considerable single-crystal growth occurred without formation of abnormally large grains in the matrix. Increasing the dislocation density in the BaTiO₃ seed crystal resulted in enhanced growth of single crystals. These results were explained in terms of interface reaction-controlled nucleation and growth, based on crystal growth theories.     

Preparation of Tetragonal Barium Titanate Thin Film on Titanium Metal Substrate by Hydrothermal Method

Tetragonal BaTiO₃ thin films were prepared directly on Ti metal substrates in Ba(OH)₂ solutions by a hydrothermal method at temperatures 400° to 800°C for 5 to 240 min. The film thickness estimated from weight gain of Ti plate was in the range from 0.5 to 2.5 μm, and it increased with increasing treatment temperature, treatment time, and Ba(OH)₂ concentration. Rectangular crystals having {100} and {001} faces grew idiomorphically with approximate crystal size of 0.3 to 2.0 μm. The tetragonality of the BaTiO₃ films became apparent when the average crystal size exceeded about 1 μm. Lattice parameters of the films were a = 3.994 Å, c = 4.035 Å, and c/a = 1.010. The films formed above 600°C had preferred orientation showing stronger XRD peaks of h 00 and 00 l than the other peaks.