低红外发射率TiO2/Ag/TiO2纳米多层膜研究

利用磁控溅射在玻璃衬底上制备了具有良好的光谱选择性透过率的TiO2/Ag/TiO2纳米多层膜.通过用X射线衍射、扫描电子显微镜、UV-VIS-NIR分光光度计、傅里叶红外光谱仪对样品进行表征,优化了薄膜的制备工艺,研究了多层膜的光学特性.结果表明,当Ag膜的厚度为12nm时,多层膜具有高的可见光透过率和优良的导电性能.样品在555nm波长处的透过率最高达93.5%,红外波段平均反射率为90%左右,8μm～14μm波段红外发射率ε＜0.2.Ag层厚度的增加使可见光高透过率波段变窄,透过率下降.内层及外层TiO2厚度的变化引起薄膜可见光透过峰的位置及强度发生变化,外层的影响高于内层.     

基底温度对ITO薄膜红外发射特性的影响

本文采用射频磁控溅射法制备ITO薄膜，该薄膜具有较低的红外发射率。利用紫外-可见-近红外分光光度计、红外发射率测量仪、四探针测试仪研究了溅射过程中基底温度对ITO薄膜红外特性和光电性能的影响，并且用AFM对ITO薄膜的表面形貌进行了表征。实验发现，随着基底温度的升高，薄膜的表面颗粒增大，透过率、方块电阻、平均红外发射率均会降低。本文还讨论了8μm～14μm波段平均红外发射率与方块电阻之间的关系。     

半导体技术

O472008010668低红外发射率TiO2/AgxCu1-x/Ti/TiO2纳米多层膜/刘海鹰,刁训刚,王丽玲,杨盟,武哲,舒远杰(北京航空航天大学理学院凝聚态物理与材料物理中心)//功能材料与器件学报.―2007,13(1).―7～12.利用磁控溅射制备了银含量在100%至80%之间的单层银铜合金薄膜和TiO2/AgxCu1-x/Ti/TiO2纳米四层膜。利用X射线衍射、扫描电子显微镜、扫描俄歇微探针,分光光度计、红外发射率测量仪对样品进行表征,研究了单层金属膜和多层膜的光学、电学性质随着银含量的变化以及热处理前后薄膜性能的变化。结果表明:相同厚度的合金膜,随着Ag含量的降低…     

ITO薄膜的电阻并联效应研究

采用电子束蒸发镀膜方法在K9玻璃基底上分别镀制了ITO/SiO₂/ITO,ITO/Ti₂O₃/ITO和ITO/MgF₂/ITO结构的多层薄膜,用四探针方块电阻仪测量薄膜表面的方块电阻,用原子力显微镜观测样品的表面微观形貌。结果显示,当ITO薄膜的粗糙度较大且介质薄膜的物理厚度小于100nm时,各层ITO薄膜之间通过山峰状的凸起结构相连通,导致样片表面的方块电阻测量值与各层ITO薄膜电阻的并联值相当。这表明,当ITO薄膜的粗糙度较大且介质薄膜厚度较小时,各层ITO薄膜表现出电阻并联效应。利用多层ITO薄膜的电阻并联效应设计并制备了450～1200nm超宽光谱透明导电薄膜,用四探针方块电阻仪测量了试验样片的表面方块电阻,用紫外-可见-近红外分光光度计测试了样片的光谱透射率。结果显示,在相同表面方块电阻条件下,相比于单层ITO薄膜,利用ITO薄膜电阻并联效应所制备的多层透明导电薄膜具有更高的光谱透射率。     

红外低辐射膜的设计、制备与表征

为了降低红外探测技术对军事目标生存能力的威胁,研制了红外低辐射膜.设计并制备了基于一维光子晶体结构的红外低辐射膜,通过结构参数优化,改善了其红外波段反射性能,并降低了薄膜总厚度.采用红外椭偏仪测试了原材料Ge膜和ZnS膜的厚度和折射率,将测试结果带入设计结构,制备了8～12?m发射率分别为0.045、0.097、0.1...     

锗基底3～5μm和8～12μm双波段红外增透膜研究

文中简要叙述了双波段(3～5μm 和8～12μm) 红外增透膜的膜料选择以及锗基底上红外双波段增透膜的设计与镀制,介绍了离子束辅助沉积技术制备该薄膜的过程。提出了采用脉冲真空电弧离子镀技术镀制无氢类金刚石膜作为红外增透膜的保护膜,并讨论了镀制类金刚石膜后,镀膜元件的光谱特性。     

膜厚对泡沫镍负载TiO2纳米薄膜附着度和光电响应的影响

采用溶胶-凝胶法与高温水热法相结合的复合方法制备了以泡沫镍为基底的不同膜层厚度的TiO2纳米薄膜光电极,并用场发射扫描电子显微镜（SEM）与电化学工作站对样品进行了表面形貌表征与光电性能测试。结果表明,膜层厚度为10层的TiO2纳米薄膜光电极的材料附着度最高,且具有最强的光电响应。研究结果为进一步优化泡沫镍负载TiO2纳米薄膜光电极的制备提供了有益参考。     

TiO2/SiO2纳米多层膜光学特性研究

采用磁控溅射方法在玻璃基底上制备了TiO2／SiO2纳米多层膜,用椭偏仪测试了薄膜的厚度和折射率。黑体实验研究表明,TiO2／SiO2纳米多层膜在800nm～1600nm区域内对红外线的吸收较好,且吸收率随着温度的升高而增大。红外光谱研究表明, TiO2／SiO2纳米多层膜在2300cm-1～2900cm-1区域内对红外线的吸收较好。     

用于动态红外景物模拟器的超薄氮化钛薄膜

针对动态红外景物模拟器的应用要求,用磁过滤电弧离子镀方法制备了超薄氮化钛薄膜。制备的薄膜厚度介于7. 5nm 至75nm。重点研究了薄膜的微观结构、电阻温度系数、电阻温度稳定性、薄膜的微加工等性质。实验结果表明,氮化钛薄膜是一种良好的辐射电阻材料。     

二氧化钒薄膜制备及其热致变发射率特性研究

通过溶胶-凝胶和真空热处理工艺在石英基底上制备了二氧化钒薄膜,对制备出的薄膜进行了X射线衍射及X射线光电子能谱分析,结果表明所制备出的薄膜价态单一,纯度较高,薄膜为多晶态,晶粒尺寸约为27 nm.利用红外热像仪拍摄了薄膜在不同温度下的红外热图并计算了发射率,结果表明二氧化钒薄膜7.5～14 μm波段发射率在相变时发生突变,突变量可达0.6,具有优异的热致变发射率性能,在红外自适应伪装等领域应用前景广阔.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first     

JOURNAL OF ELECTRONICS(CHINA)

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NEXT GENERATION WIRELESS NETWORKS–ESPECIALLY THE USE OF MILLI-MICROWAVE BANDS

The global bandwidth shortage of wireless communications has motivated the exploration of the naillimeter wave （ram-wave） frequency spectrum for the next generation wireless communications. Recent advances in RF CMOS technology and high speed baseband signal processing technologies have enabled tile extensive research and development of turn-wave wireless communications. The multi gigabit per second data rate of ram-wave system will lead to applications in many important scenarios, such as WPAN, WLAN,back-haul for cellular system. And the frequency bands include 28 GHz, 38 GHz, 45GHz, 60GHz, E-BAND and even beyond 100 GHz. The propagation and the imitation of the RF circuits design in these frequency bands make the directional antennas be inevitable for mm-wave communications.