Effects of NaNbO3-Co2O3 Co-additive on the Properties of PZN-PZT Ceramics

NaNbO3-Co2O3 co-added PZN-PZT （PZCNNT） ceramics were prepared using conventional solid state reaction. The piezoelectric and dielectric properties were measured. The experimental results show that the addition of 0.3mo1% Co2O3 leads to low dielectric loss （tgδ） in PZCNNT ceramics and the proper addition of NaNbO3 not only improves piezoelectric properties but also decreases intensively dielectric loss and mechanical loss. The optimal ceramic having d33=310 pC/N, kp=0.59, εr=985, tgδ=0.0034, Qm=1380 was obtained.     

The Dielectric Properties and Preparation Method of BaTiO_3/PVDF 0-3 Composites

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Dy_2O_3掺杂对钛酸锶钡陶瓷结构性能的影响

采用草酸盐沉淀法,以硝酸锶、硝酸钡、钛酸丁酯和草酸为原料,Dy2O3为掺杂剂,制得了Ba0.6Sr0.4TiO3粉体,并于1250℃将其烧结成Ba0.6Sr0.4TiO3系电介质陶瓷。利用扫描电镜、X射线衍射及TH2818自动元件分析仪对Dy2O3掺杂量为0.2%~2%的Ba0.6Sr0.4TiO3陶瓷的微观结构和介电性能进行研究。结果表明,Dy2O3的掺杂没有影响到BST陶瓷的主晶相钙钛矿结构,且一定量的Dy3+进入到BST晶格中。BST陶瓷的介电损耗随着掺杂量的增加而逐渐减小,介电常数随着掺杂量的增加呈现先增大后减小的趋势,当掺杂量为0.5%时,介电常数最大,为4 474.48。     

Small Rb~+ Doping in CaCu_3Ti_4O_(12)——A Possible Approach to Reduce Dielectric Loss

Ca1-xRbxCu3Ti4O12 （x=0, 0.01, 0.02 and 0.03） ceramics were synthesized by the sol-gel method. Doping Rb＋ reduces dielectric loss, which reaches minimum when x=0.02. By measuring properties of electrical conduction, larger leakage current density and height of grain-boundary Sehottky potential barrier （φB） were found in the doped samples, and φB became maximum when x=0.02. These results are attributed to the increase in the amount of oxygen vacancies and the formation of Cu-rich/Ti-poor grain-boundary layers, and it can be concluded that the dielectric loss in CCTO ceramic can be reduced by manipulating the composition and electrical properties of grain boundary.     

The Dielectric Properties and Preparation Method of BaTiO3/PVDF 0-3 Composites

A series of 0-3 composties of the polyvinylidene fluoride (PVDF) and BaTiO3 was prepared,BaTiO3 was modified with titanate coupling agent .The dielectric properties and the interfacial interaction of composites by different preparation methods were examined and compared,The result shows that the relaive dielectric constant ε of the composite prepared in solution has a maximum value at about 70% weight fraction of BaTiO3 and the dielectric loss tanδ increases rapidly when the fraction exceeds 70%, For the composite preared in melt, the relative dielectric constant ε almost raches a maximum value at about 60% weght fraction of BaTiO3 and the dielectric loss is comparatively lower,The deielectric proerties of composites ore improved by using a coupling aent.     

高介高压介质材料及其工艺的探讨

阐述了选择高介高压介质材料的理论依据,确定了以SriiO_3—Bi_2O_3—Tio_2系为基进行改性的适合制作高介高压介质材料的理想组成。同时对材料不同生产工艺下制样和重烧处理后的电性能做了比较,从而确定出了一种较完善的工艺方法。     

DMCPS/CHF3制备的F-SiCOH低k薄膜结构与沉积速率研究

以十甲基环五硅氧烷(DMCPS)和三氟甲烷(CHF3)作为反应气体,采用电子回旋共振等离子体化学气相沉积(ECR-CVD)方法,制备了氟掺杂的SiCOH低介电常数薄膜。研究发现:随着CHF3/DMCPS流量比的增大,薄膜的沉积速率呈"N"型变化。根据薄膜结构和成分的傅立叶变换红外光谱仪(FTIR)、X射线光电子能谱(XPS)以及放电等离子体中基团分步的光强度标定的发射光谱(OES)分析可知:薄膜沉积速率的变化是由于CHF3进气量的增加导致薄膜生长从以沉积F-SiCOH薄膜为主过渡到以沉积氟化非晶碳(a-C:F:H)薄膜为主的结果。     

以太网———ATM网通信网关实验研究

论述了以太网与ＡＴＭ网实现互联通信的方法，设计并实现了网关硬件电路及其相应软件，提出了一种ＡＴＭ信元信头差错控制编码的有效算法，并系统地给出了以太网卡通信过程控制的软件编程．实验结果表明，文中提出的方法在宽带综合业务数字网中能实现以太网的数据分组，按ＡＴＭ信元的模式透明传输，且可获得良好的效果．     

Cu离子掺杂Ni—Zn铁氧体的结构和介电性能

用传统的陶瓷制备工艺制备了Ni0.5-xCuXZn0.5Fe2O4铁氧体,其中x=0．12,0．16,0．20,0．24,0．28。对不同Cu掺杂量的Ni—Zn铁氧体样品的结构、微结构和介电性能进行了研究．结果表明：所有的样品均生成子立方尖晶石结构,x=0．24,0．28时,出现了杂相CuO和CuFe2O4;介电常数随频率变化的曲线显示了尖品行结构铁氧体的正常的介电行为,不同频率下介电常数均随cu含量的增加,先减小后增大,在x=0．20时达到最小值;似介电拟耗角正切曲线随频率变化出现异常行为,所有的样品都出现了多个峰值。     

铅掺杂对钛酸锶钡铁电薄膜性能的影响

采用溶胶-凝胶法在Pt／Ti／SiO2／Si（100）村底上制备了末掺杂和掺铅的钛酸锶钡（BST）薄膜，研究了铅的加入对BST薄膜的结构和电学性能的影响。实验结果表明：随着铅的加入量的增加，BST薄膜的晶粒尺寸增大；在同一频率下，介电常数呈增大趋势。在测试频率低于50kHz时，介电常数和介电损耗急剧降低。     

高压瓷介电容器的发展概况

本文概述了国内外高压瓷介电容器的市场发展概况和介质材料研究的最新发展动向。     

CCTO掺杂对BaTiO3-Nb2O5-Co3O4陶瓷系统介电性能的影响

以BaTiO3-Nb2O5-Co3O4(BTNC)系统陶瓷为研究对象,研究了掺杂CaCu3Ti4O12(CCTO)对该系统陶瓷介电性能的影响.结果表明,在20～85℃温度范围内,BT系统中CC-TO掺杂量为3.0%时,体系平均介电常数>2 600,温度稳定性△C/C≤4.7%;在20～125℃温度范围内,BTNC系统中CCTO掺杂量为2.0%时,体系的平均介电常数>2 700,温度稳定性△C/C≤10%;CCTO掺杂量为4.0%时,平均介电常数>2 200,温度稳定性△C/C≤4.7%.     

SrTiO_3-Bi_2O_3·3TiO_2-Pb7iO_3系统铁电陶瓷低频介电性

SBT-PT系统中,较宽范围内存在高介电系数组成点。固定BT_3含量(5mol%～15mol%),ε与tgδ随PT引入量提高而增大。当PT引入量为20mol%～30mol%时,介电系数最高。在SBT中引入PT不会影响BT_3在ST中的极限固熔量。     

Relaxor behavior and electrical properties of high dielectric constant materials

Several typical high dielectric constant materials are reviewed to study the electrical properties and relaxation mechanism. It is found that a Lorenz-type law can be used to describe the dielectric permittivity of either the normal ferroelectrics with or without diffuse phase transitions (DPT) or the typical ferroelectric relaxors. The ferroelectric DPT can be well described by just one fitting process using the Lorenz-type law, while the relaxor ferroelectric transition needs two independent fitting processes. The Lorenz-type law fails at the low temperature side of the dielectric maximum of a first-order ferroelectric phase transition. Above the transition temperature, the dielectric curves of all the studied materials can be well described by a Lorenz-type law. Supported by the National Natural Science Foundation of China (Grant No. 50672075), New Century Excellent Talents (Grant No. 05-087), Natural Science Foundation of Northwestern Polytechnical University (Grant No. 200703), Xi’an Science & Technology Foundation (Grant No. CXY08006) and 111 Project (Grant No. B08040)     

BiSI棒状纳米晶薄膜的物性研究

采用改进的喷雾热解方法——异步脉冲超声喷雾热解法（APUSP），以BiCl3、硫脲和碘溶液为前驱液，在非晶衬底上成功地制备了BiSI纳米棒阵列薄膜．对采用异步脉冲超声喷雾热解法所制备的棒状BiSI纳米晶薄膜样品的介电特性和光吸收特性进行了测试．结果表明，采用该法所制备的棒状纳米结构薄膜与传统喷雾热解法所制备的薄膜，由于结构的不同，其介电特性和可见光吸收特性具有明显的区别．该方法与传统喷雾热解法相比，所制备的纳米晶薄膜具有较高的介电常数、较小的介电损耗和较大的光吸收强度，     

温度对绝缘纸介电系数和损耗角正切的影响

根据电桥平衡原理,将绝缘纸做成电容器试样,通过测量被测试样的电容量换算出绝缘纸的介电系数￡,对比分析了不同温度下绝缘纸和打印纸的介电系数￡和损耗角正切tanδ,结果表明在相同条件下绝缘纸比打印纸具有更好的绝缘性、耐热性和低损耗特性．     

低温量子起伏对铁电体介电行为的影响

利用有效场方法，通过零点振动能引入量子起伏，研究了铁电体的介电常数随温度的变化。在量子起伏较大，并且仅在低温区域存在时，体系不具有自发极化强度，但介电常数在有限温度出现一个弥散的峰值。     

基于介电特性的水果无损检测系统研究

无损检测是水果生产自动化的重要一环，文章介绍了一种基于水果的介电特性的无损检测实验系统，并以苹果为材料，检测了等效电容，相对介电常数，损耗因数和等效阻抗几项介电特性参数。同时定义并检测了一组苹果外形参数。通过对图形的分析，文章指出苹果的内部品质和外形尺寸与其介电特性之间均存在联系，并讨论了基于介电特性的无损检测系统的应用前景，指出了需要解决的问题。     

The Effect of Bi2O3 on the Structure and Microwave Dielectric Properties of Ba6-3xNd8＋2xTi18O54 System（x=2/3）

The structures and dielectric properties of Ba6-3xNd8＋2xTi18O54 system（x=2/3） doped with different contents of Bi2O3, whose final molecular formula is Ba6-3x（Nd1-yBiy）8＋2xTi18O54 were investigated. It is indicated that the dielectric constant increases greatly whereas Q value（f0=4 GHz） decreases with the increase of Bi2O3 content. However, the temperature coefficient could be controlled below 0±30×10^-6/℃ in the experiment. These phenomena are related to the appearance of a new phase, Bi4Ti3O12, which has high dielectric constant. Also, that Bi^3＋（0.13 nm） substitutes for Nd^3＋（0.099 5 nm） will increase the unit cell volume, which will lead to the enlargement of the octahedron B site occupied by Ti^4＋. So the spontaneous polarization of Ti^4＋ ions will be strengthened. Besides, Bi^3＋ will fill up some vacancies which Ba^2＋ or Nd^3＋ ions leave in two A1 sites and four A2 sites. More positive ions polarize, which also contributes to higher dielectric constant. The samples got with the optimium properties are sintered at 1 200 ℃ for 4 h, when y=0.25, ε≈110, Q≈5 400（f0=4 GHz）, TCC=-4.7×10^-6/℃; When y=0.3, ε≈120, Q≈5 000（f0=4 GHz）, TCC=-24×10^-6/℃.     

电流变液介电常数与电导率的测量

采用频率法测定了不同浓度的电流变液介电常数,用电导池常数的方法对不同浓度的电流变液在不同电场强度下的电导率进行了测量。结果表明：电流变液的介电常数基本上随浓度的增加而增大;同一浓度的电流变液的电导率随电场强度的增大而增大,不同浓度的电流变液电导率测量结果表明电导率先随浓度增加而增大,而后减小。分析认为有效离子浓度的变化是导致电流变液导电能力先增加后降低的重要原因。