CIS(CIGS)薄膜材料的研究进展

以CIS(CIGS)作为吸收层的太阳能电池因其诸多优异性能而成为最具潜力的第三代太阳能电池.首先介绍了CIS(CIGS)薄膜的性能与掺杂对电池的影响,讨论了多种薄膜沉积技术及其优缺点,重点介绍了几种低成本制备技术及其影响因素,最后阐述了CIS(CIGS)薄膜电池的发展情况,并展望了CIS(CIGS)电池的发展趋势.     

电沉积制备CIS薄膜太阳能电池材料

电沉积法制备CIS薄膜因具有可实现大面积制备,成本低,制备效率高以及污染小等优点而得到了重点研究,是最有应用前途的薄膜太阳能电池材料之一.概述了电沉积制备CIS薄膜太阳能电池材料的原理、制备工艺,同时介绍了CuInSe2薄膜太阳能电池材料的发展概况.     

铜铟硒光伏材料的制备技术

黄铜矿型的CulnSe_2(CIS)是CIS太阳能电池的核心材料,CIS材料的制备技术对太阳能电池的效率和成本有极大影响.CIS材料性能的理论研究推动了单晶制备工艺,而粉体材料制备技术因有望用于太阳能电池的低成本制备而逐渐受到重视,薄膜材料的制备工艺则随着薄膜太阳能电池的研究得到极大发展.阐述了单晶、粉体和薄膜等CIS光伏材料的制备方法,介绍了几种典型的制备技术,并总结了这几种方法的技术特点.     

a—Si／CIS叠层太阳能电池的光诱导性能衰退和稳定性分析

基于pin结构a-Si:H太阳能电池中的空间电荷效应，讨论a-Si/CIS叠层太阳能电池的稳定性。结果表明，光生空穴俘获造成的a-Si:H中正空间电荷密度增加改变了电池内部的电场分布，普遍抬高a-Si:H薄膜中电场强度。在光照射下，空间电荷效应不会给a-Si/CIS叠层结构中的a-Si:H薄膜带来准中性区（低场“死层”），因而没有发生a-Si/CIS叠层太阳能电池顶电池（p-i-n a-Si:H)的光诱导性能衰退，a-Si/CIS叠层结构太阳能电池具有较高的光稳定性。     

CIS太阳电池材料的研究进展

综述了国内外太阳电池及其材料的发展概况.目前应用的光电转换材料主要有硅材料和化合物半导体材料,介绍了用这几类材料制作的太阳电池的特点,重点介绍了其光电转换效率.在薄膜电池材料中重点综述了铜铟硒(CIS)基薄膜太阳电池的研究进展.由于制约太阳电池发展的关键问题是制备成本高和转换效率低,提出了采用化学法制备CIS基薄膜材料及其梯度带隙,该方法将开辟高性能CIS基吸收层薄膜材料及其器件制备的低成本新途径.     

纳米CuInS2光伏材料研究进展

三元系铜铟硫CuInS2(CIS)以其良好的光伏性能,成为太阳能电池领域的研究热点。从CIS结构出发,综述了CIS纳米材料合成的物理、化学方法,主要包括高温热解法、热注入法、水热和溶剂热法等化学方法以及微波加热等方法,并讨论了各方法的优缺点,最后展望了CIS纳米材料的发展趋势。     

a-Si/CIS叠层太阳能电池的光诱导性能衰退和稳定性分析

基于pin结构a Si∶H太阳能电池中的空间电荷效应 ,讨论a Si/CIS叠层太阳能电池的稳定性。结果表明 ,光生空穴俘获造成的a Si∶H中正空间电荷密度增加改变了电池内部的电场分布 ,普遍抬高a Si∶H薄膜中电场强度。在光照射下 ,空间电荷效应不会给a Si/CIS叠层结构中的a Si∶H薄膜带来准中性区 (低场“死层”) ,因而没有发生a Si/CIS叠层太阳能电池顶电池 (p i na Si∶H)的光诱导性能衰退 ,a Si/CIS叠层结构太阳能电池具有较高的光稳定性。     

铜铟硒薄膜的外延生长和表面重构及其电池性能研究

在GaAs的(110)、(001)和(111)A、(111)B等极性晶面上, 通过铜铟共溅-硒蒸镀的方法, 分布外延生长出(220/204)、(001)和(112)结晶取向的单晶CIS薄膜. 系统考察了CIS薄膜外延生长的结晶取向和表面微结构, 发现了这些CIS外延薄膜均需表面重构化而形成比表面能低的CIS(112)晶面, 结合晶体结构研究了各种晶面和比表面能的相关性. 通过各种衬底下不同结晶取向的CIS薄膜的太阳能电池组装, 发现当CIS薄膜生长具有(220/204)结晶取向时电池器件性能最好、效率最高, 说明可通过控制CIS薄膜的沉积条件和选用合适取向的衬底, 增加吸收层(220/204)的结晶取向, 从而显著提高CIS薄膜太阳电池的光电性能.     

硫化温度对CuInS2吸收层薄膜微结构的影响

采用电沉积-硫化法制备了CuInS2(CIS)薄膜.用X射线衍射仪(XRD)、原子力显微镜(AFM)和能谱仪(EDS)等实验手段对CIS薄膜的晶体结构、形貌和组分进行了表征.结果表明:在500～560℃硫化温度范围内制备的CIS薄膜表面均生成金属性CuxS二元相,后续的KCN刻蚀处理CuxS二元相可去除.硫化温度为540℃制得的CIS薄膜高质量结晶、具有[112]择优取向,适合于制备CIS薄膜太阳能电池吸收层.     

光照强度和温度对几种光伏材料性能影响的实验研究

如今,光伏技术受到了越来越广泛的关注,发展光伏技术将成为二十一世纪解决传统能源短缺、枯竭的重要途径。本文通过实验研究光照强度和温度对单晶硅、多晶硅和CIS（CuInSe2）三种光伏电池材料的影响。     

Modes of inbound knowledge flows: are cooperation and outsourcing really complementary?

This study examines the relationship between breadths of two different modes of external knowledge: R&D outsourcing and cooperation. Building upon transaction costs literature and literature on research partner breadth and R&D outsourcing, we hypothesise an U-inverted relationship between outsourcing breadth and innovation performance and a complementary relationship between R&D outsourcing and R&D cooperation. The model is tested on a large sample based on CIS survey for Spain. The empirical analysis confirms the U-inverted relationship between outsourcing breadth and innovation and also reveals an interesting result: the complementary effect of R&D cooperation varies with the level of R&D outsourcing breadth and it is not confirmed for low and medium levels of R&D outsourcing breadth. The results have important implications for theory on the selection of different modes of inbound open innovation and for managers and their cooperation and outsourcing strategies.     

A new approach to the manufacture of chalcogenide thin film solar cells

Glass beads of 0.2 mm diameter are covered with molybdenum, copper and indium. The copper/indium layers are transformed into copper indium disulfide (CIS) by exposing the glass beads to a hydrogensulfide/argon mixture at temperatures of around 500 °C. The CIS covered glass beads serve as the basis material for the formation of solar cells. The main advantage of this approach is the separation between absorber and cell/module formation. In this paper the different process steps necessary for cell manufacturing are described. Some properties of solar cells made out of CIS covered glass beads are presented.     

Open,Semi-Open and Closed Innovators: Towards an Explanation of Degree of Openness

There is much controversy in the literature over the relationship between the openness of firms' innovation strategies and firm characteristics such as size, R&D intensity and sector. We argue that the controversy arises because, both theoretically and empirically, only a binary, open vs. closed, strategy has been considered. In this paper, we distinguish among three firm strategies: open, semi-open and closed, drawing upon a panel of Spanish firms (2004–2006) using data from Community Innovation Survey (CIS)-type surveys, and two different indicators of openness. Our results show that open innovators are smaller and less R&D intensive than semi-open ones, although larger and more R&D intensive than closed innovators. These results reduce some of the controversies, and show that two conflicting forces, absorptive capacity and a “need” effect, are at stake in open innovation strategies.     

Optimization of deposition temperature of SILAR Cu-rich CuInS2 thin films

CuInS₂ (CIS) is studied widely as a promising absorber material for high efficient and low cost thin film solar cells. CIS thin films are prepared on soda lime glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) technique at different deposition temperatures (40 to 70 °C). The structural, compositional and optical properties are studied with x-ray diffractometer, energy dispersive x-ray analyzer and spectrophotometer. The influence of the deposition temperature on the properties of CIS thin films is discussed in this paper in detail.     

A structured approach to explore technological competencies through R&D portfolio of photovoltaic companies by patent statistics

When the technological development of an enterprise is path dependent, core technological competencies will develop. In addition, core technological competencies promote technological development. Consequently, enterprises should always examine the advantages of their core technological competencies. Under dynamic competition, enterprises should monitor their own performance as well as their competitors at all times and consequently adjust their technological strategies. This study used two patent indices, Patent Share and Revealed Technological Advantage, to measure the internal core technological competencies of manufacturers. It also integrated four other indices namely: (1) Technology Attractiveness (Relative Growth Rate), (2) growth potential of technologies (Relative Development of Technology Growth Rate), (3) Relative Patent Position, and (4) Revealed Patent Advantages. These were used to analyze the external strengths and weaknesses of the research and development (R&D) portfolios of companies. These two analytical methods can effectively identify the internal core technological competencies and the external advantages of R&D portfolios of leading companies in the solar photovoltaic (PV) industry. This study also discussed the relationship between R&D portfolios and core technological competencies of leading solar photovoltaic companies and compared those with two core technological competencies with those that have a single core technological competence. The study results show that the R&D portfolios of companies engaged in a single, specific technology field have advantages. This study helps improve the quality of technological planning and decision-making of manufacturers, proposes a method of using core technological competencies to analyze the advantages of R&D portfolios, and helps solar PV manufacturers monitor their own core technological competencies as well as their competitors and partner companies.     

Preparation and characteristics of CuInSe2 thin films by dip-coating method using its nanocrystal ink

Nanocrystal ink-coating technique is a low cost, less pollution, and non-vacuum solution based processing to produce CIS absorbing layers for photovoltaics, leading to low fabrication cost and eco-friendly process of solar cells. In this work, highly crystallized chalcopyrite CuInSe₂ (CIS) nanocrystals were synthesized by a green and cheap air pressure hot injection method using 1-Methyl-2-pyrrolidinone and glycerol mixed solvent, and copper chloride, indium chloride and selenium dioxide as precursors. The synthesized CIS nanocrystals were used to prepare colloidal nanocrystal inks by dispersing them ultrasonically in absolute alcohol and deposit CIS thin films by dip-coating nanocrystal inks. Basic characterization data of the synthesized CIS nanocrystals and the ink-coated thin films were described by XRD, TEM, FESEM, EDS, UV–vis–NIR, and Hall measurements.     

High voltage Cu(In,Ga)S2 solar modules

Sulfurcell (SC) has been running a pilot production for thin-film solar modules using CuInS₂-chalcopyrite (CIS) as absorber material since 2004. Since then production technology has been constantly improved with module power values exceeding 64 W, corresponding to an aperture area efficiency level of about 9%. Small area (0.5 cm2) cells cut out of such CIS modules reach maximum efficiencies close to 11%. Strong efforts have been made to develop a new sequential Cu(In,Ga)S₂ (CIGS) process suitable for production of large-scale CIGS solar modules thereby enabling module efficiencies above 10%. CIGS-based solar cells are—quite similar to CIS-based modules—prepared from sputtered metals subsequently sulfurized using rapid thermal processing in sulfur vapor. Such Cu(In,Ga)S₂ solar cells reach material record efficiencies about 13%. The cells are characterized by high open-circuit voltages up to 890 mV. Based on the results of the “Helmholtz Zentrum Berlin” (HZB), Sulfurcell has successfully scaled this process to our typical module size of 125 cm × 65 cm and is currently piloting the process for mass production. This paper will give an overview of electrical and structural parameters of world's first large-scale CIGS modules. CIGS module and cell parameters will be compared with standard CIS module and cell parameters and measured CIGS efficiency temperature coefficients will be compared with typical temperature coefficients of modules based on established PV technologies.     

Thin tantalum-silicon-oxygen/tantalum-silicon-nitrogen films as high-efficiency humidity diffusion barriers for solar cell encapsulation

Flexible thin-film solar cells require flexible encapsulation to protect the copper-indium-2 selenide (CIS) absorber layer from humidity and aggressive environmental influences. Tantalum-silicon-based diffusion barriers are currently a favorite material to prevent future semiconductor devices from copper diffusion. In this work tantalum-silicon-nitrogen (Ta-Si-N) and tantalum-silicon-oxygen (Ta-Si-O) films were investigated and optimized for thin-film solar cell encapsulation of next-generation flexible solar modules.CIS solar modules were coated with tantalum-based barrier layers. The performance of the thin-film barrier encapsulation was determined by measuring the remaining module efficiency after a 1000 h accelerated aging test. A significantly enhanced stability against humidity diffusion in comparison to non-encapsulated modules was reached with a reactively sputtered thin-film system consisting of 250 nm Ta-Si-O and 15 nm Ta-Si-N.