SiSiO2 interface state spectroscopy using MOS tunneling structures

This paper provides a critical review and classification of the studies of SiSiO₂ interface state parameters and energy distributions by means of MOS tunneling in structures with ultrathin SiO₂ layers (10–100 Å). Suggestions are made of experiments that will help to elucidate the importance of materials and processing conditions on these states, and to separate the various mechanisms involving charge exchange with the metal, the conduction band, and the valence band of the semiconductor.     

The doped Si/SiO2 interface

A study is reported of the influence of dopant atoms on the SiSiO₂ interface states of thermally oxidized silicon. It was found that acceptor or donor atoms induce interface states and oxide charges. The effect is largest in the case of acceptor dopants and is independent of the doping process. The influence of the dopant atoms on oxide charge is probably related to the different segregation coefficients of acceptors and donors.     

Tunneling of electrons from Si into thermally grown SiO2

Accurate measurements of electron tunneling at the SiSiO₂ interface were performed using the decay of surface potential following charging of the exposed oxide surface by positive corona ions. The surface potential was measured by an automated Kelvin-probe arrangement. Comparison of results for various substrate dopings, crystallographic orientations and oxide film thicknesses is presented. A model for tunneling based on electrons being confined within the lowest subband at the SiSiO₂ interface is also discussed and compared to the Fowler-Nordheim expression.     

Frequency stability of RF-excited CO2 waveguide lasersin gain-switched and Q-switched regimes

The behavior of an RF-excited waveguide laser is analyzed in a gain-switched and a Q-switched regime measuring the frequency sweep during the optical pulse. This enables laser-induced medium perturbations (LIMP) to be directly distinguished from the effects of the discharge power loading. The experimental observations confirm that the main perturbation in the laser output frequency is to be attributed to thermal energy variations. This gives the result of a Q-switch chirp more than one order of magnitude smaller than in the pulsed current mode, suggesting the use of Q-switching waveguide lasers in applications such as long range or Doppler laser radar systems. The chirp behavior in the pulsed current mode can show overshot relaxation corresponding to the propagation of density waves in the guide     

Optimization of Q-switched lasers

The authors extend the standard rate equation analysis to obtain expressions for the maximum peak power, maximum pulse energy, and minimum pulsewidth of a single Q-switched output pulse; the maximum power efficiency of a repetitively Q-switched laser; and the corresponding cavity output couplings. Results are obtained analytically and numerically, and a comparison of the two sets of results is made. As a first step in this process the authors derive general expressions for the peak power, pulsewidth, pulse energy, and power efficiency. The authors next differentiate these expressions in order to find the maxima or minima that optimize the parameter of interest. Differentiation is done with respect to the cavity output coupling     

Effects of nitrogen annealing on electron scatterings in SiSiO2 interface

The effective mobility of electrons at Si (100) surfaces was measured as a function of electron density N_s = 5 × 10¹¹?1 × 10¹³ cm^?2 at 4.2K for samples with and without annealing (10 min–2 hr) in nitrogen gas at 1000°C after wet thermal oxidation. A great part of the scattering by Coulomb and short-range potentials was reduced by a short (～10 min) anneal time, although the subsequent annealing resulted in a slight increase in the number of the scatterers. On the other hand, scattering by a surface roughness potential was reduced with increase in the anneal time. These scattering effects associated with N₂ annealing are discussed.     

A self-injection locked, Q-switched, line-narrowed Ti:Al2O3 laser

Line-narrowing, Q-switched, and self-injection locking are studied independently and as a system. Line narrowing is shown both theoretically and experimentally to depend on the inverse square root of the pulse evolution time interval. Q switching of the Ti:Al₂O₃ laser is demonstrated and the laser output energy as a function of the Q-switch delay is investigated. Self-injection is demonstrated and the operation of the laser is explored as a function of loss and the Q-switch delay. Self-injection locking is demonstrated and the performance as a function of the Q-switch delay is determined     

Laser-induced self-organization of nano-wires on SiO2/Si interface

Original observation of new graded band gap structures formed on the surface of elementary Si semiconductor at studying the optical properties of Si nano-hills formed at the SiO₂/Si interface by pulsed Nd:YAG laser irradiation is reported. The self-organized nano-hills on Si surface are characterized by a strong photoluminescence in the visible range of spectrum with a shoulder extended to the long-wave part of the spectrum. The feature is explained by the quantum confinement effect in nano-hills-nano-wires of gradually changing diameter.     

Determination of Si/SiO2 interface roughness using weaklocalization

The interface roughness of intentionally textured Si/SiO₂ interfaces was measured using the quantum weak localization (WL) correction to the electrical conductivity at low temperatures. The deduced roughness was confirmed by observation of the Si surface replicas by atomic force microscopy (AFM). Quantitative agreement between the two methods was found (Δ=1.2 to 1.4 Å from WL and 1.35 Å from AFM). For a surface with artificially induced texture, it is found that WL can easily distinguish a significant increase in roughness relative to the smooth surfaces. AFM confirms this qualitative conclusion     

Definition of curve fitting parameter to study tunneling and trapping of electrons in Si/ultra-thin SiO2/metal structures

The tunneling of electrons through metal–oxide–silicon (MOS) structures with ultra-thin oxide is modeled using a linear model for the electron potential energy, an approach which simplifies the computation of both the interface potential and the field penetration distance in the substrate. The one-particle quantum problem is split into finding the metastable states induced by the internal field penetration in the substrate and the running states in the gate region. The two states are assumed to be connected by the condition for the continuity of the probability density at the substrate–dielectric interface. The electron probability current and the total gate current density are obtained for different gate voltages. As the model yields excellent fittings with experimental current–voltage (I–V) data for MOS structures, it was further applied to constant current stressing analysis in order to obtain values for important electron trapping parameters in the oxide. The resultant estimates of the electron trapping cross-section fall in the range of other independent determinations in the literature.     

Acoustooptic Q-switching of erbium lasers

Experiments were performed on Q switching of erbium lasers at 3 μm with an acoustooptical modulator. Different laser crystals of YAG:Er and YSGG:Cr:Er have been investigated. The highest fraction of single pulse Q-switch energy to free-running mode energy was 1%. Pulse durations of 50 ns were obtained. Multiple switching with up to 14 Q-switch peaks per flashlamp pulse could be generated, containing up to 19% of the energy of the free-running mode     

Effect of SiO2/Si interface roughness on gate current

In many theoretical investigations of the electric-tunnel effect through an ultrathin oxide in metal-oxide-semiconductor (MOS) structure, it is commonly assumed that the oxide is of uniform thickness. One example of nonuniformity in oxides is interface roughness. Interface roughness effects on direct tunneling current in ultrathin MOS structures are investigated theoretically in this article. The roughness at SiO₂/Si interface is described in terms of Gauss distribution. It is shown that the transmission coefficient increases with root-mean-square (rms) roughness increasing, and the effect of rms roughness on the direct tunneling current decreases with the applied voltage increasing and increases with rms roughness increasing.     

I and Q decomposition of self-noise in square-lawclock regenerators

A method for obtaining power spectra for the self-noise components in phase and in quadrature to the desired generated clock signal for PAM systems is described. A previously recognized cross spectrum is also discussed. Results can be expressed either in a closed form or as the sum of rapidly convergent series, depending on the signalling waveform used. A computation of the in-phase and quadrature spectra for Nyquist pulses for excess bandwidth factors ranging from 0.1-0.9 is included, along with demonstration showing that for signalling waveforms with even or odd symmetry, cross power spectrum is zero at all frequencies. It is also shown that if the cross power spectrum is not zero due to asymmetry in the signalling waveform, sampling keyed to other than zero-crossing of the timing wave can give a lower timing jitter     

Order N log2 N WHT/DHT algorithm

An efficient algorithm is proposed which computes the coefficients of the higher order discrete Hartley transform (DHT) directly from the coefficients of lower-order DHTs. With this new development, the two-stage Walsh-Hadamard transform/discrete Hartley transform (WHT/DHT) is comparable to the existing fast algorithms. The same approach can also be used for the computation of DCT coefficients     

Data reduction method for Q measurements of strip-lineresonators

A technique that enables the attenuation constant α of a microstrip line to be found from the measured return loss curve as a function of frequency for a half-wavelength resonator is described. Data averaging is incorporated and the effects of dispersion are included. This method does not require the use of an equivalent resonator model for the stripline, nor does it rely on graphical techniques     

Effects of axial nonuniformity in modeling Q-switchedlasers

Generic Q-switched laser pulses are calculated using a point model and a traveling wave model. Results indicate that the point model approach commonly used in rate equation modeling is inadequate for large initial inversions, large internal losses, or large fractional outcoupling. The point model typically overestimates peak power and energy and distorts the pulse shape. A simple traveling wave model is developed which easily describes these cases. The optimum outcoupling to maximize peak power varies significantly between the two models     

在SiO2中掺A1对Au／纳米（SiO2／Si／SiO2）／p—Si结构电致发光的影响

利用射频磁控溅射方法,制成纳米SiO2层厚度一定而纳米Si层厚度不同的纳米（SiO2/Si/SiO2）/p-Si结构和纳米（SiO2:A1/Si/SiO2:A1)/p-Si结构,用磁控溅射制备纳米SiO2:A1时所用的SiO2/A1复合靶中的A1的面积百分比为1%。上述两种结构中Si层厚度均为1-3nm,间隔为0.2nm。为了对比研究,还制备了Si层厚度为零的样品。这两种结构在900℃氮气下退火30min,正面蒸半透明Au膜,背面蒸A1作欧姆接触后,都在正向偏置下观察到电致发光（EL）。在一定的正向偏置下,EL强度和峰位以及电流都随Si层厚度的增加而同步振荡,位相相同。但掺A1结构的发光强度普遍比不掺A1结构强。另外,这两种结构的EL具体振荡特性有明显不同,对这两种结构的电致发光的物理机制和SiO2中掺A1的作用进行了分析和讨论。     

Theory of the optimally coupled Q-switched laser

The general equations describing Q-switched laser operation are transcendental in nature and require numerical solutions, which greatly complicates the optimization of real devices. Here, it is shown that, using the mathematical technique of Lagrange multipliers, one can derive simple analytic expressions for all of the key parameters of the optimally coupled laser, i.e. one which uses an optimum reflector to obtain maximum laser efficiency for a given pump level. These parameters can all be expressed as functions of a single dimensionless variable z, defined as the ratio of the unsaturated small-signal gain to the dissipative (nonuseful) optical loss, multiplied by a few simple constants. Laser design tradeoff studies and performance projections can be accomplished quickly with the help of several graphs and a simple hand calculator. Sample calculations for a high-grain Nd:YAG and a low-gain alexandrite laser are presented as illustrations of the technique     

Charge-pumping characterization of SiO2/Si interface invirgin and irradiated power VDMOSFETs

The applicability of charge-pumping technique to characterize the oxide/silicon interface in standard power Vertical Double-diffused (VD)MOS transistors is studied. Qualitative analysis of the charge-pumping threshold and flat-band voltage distributions in the VDMOS structure, supported with rigorous transient numerical modeling of the charge-pumping effect, shows that the measurements can be carried out in the subthreshold region. This conclusion is confirmed by various experimental results. The characteristics, i.e. charge-pumping current versus gate top level, is studied in detail. The changes in the characteristics after γ-ray irradiation are analyzed. A charge-pumping-based method for separate extraction of interface state density and density of charge trapped in the oxide after irradiation of VDMOSFETs is proposed. The validity and limitations of the method are studied by experiments and modeling     

The influence of mobile ions on the Si/SiO2 interface traps

An investigation of the relation between mobile ions and interface traps was carried out, using an appropriate technique to determine the number and type of mobile ions. It was found that mobile ions do not cause interface traps in the middle 0.8 eV of the bandgap. It appears that interface traps are rather caused by some stress effect. The results are considered in light of previously reported work.