Right-cyclic Hadamard coding schemes and fast Fourier transformsfor use in computing spectrum estimates in Hadamard-transformspectrometry

Two computationally efficient spectrum-recovery schemes were recently developed for use by Hadamard-transform spectrometers that have static and dynamic nonidealities in their encoding masks. These methods make use of a left-cyclic Hadamard encodement scheme and the ability to express the left-cyclic W_D matrix in factored form as W_D =ST_D. The matrix W_D describes the dynamic characteristics of and the encodement scheme for the mask. This paper focuses on the use of a right-cyclic Hadamard pattern to encode the mask and computationally efficient methods that can be used to obtain the spectrum-estimate. The major advantage of right-cyclic over left-cyclic encodement schemes is due to the resulting right-cyclic nature of both W _D and W_D^-1. Fast algorithms, such as a fast Fourier transform (FFT) or a Trench algorithm, that take advantage of the right-cyclic nature of W_D can be used to obtain W_D^-1 directly. In general, the number of mask elements is not an integer power of two, and non-radix-2 FFT's must be used to compute W_D^-1. Since W_D^-1 is right-cyclic, the vector-matrix product of W_D^-1 and the measurement vector can be expressed as a circular correlation and implemented indirectly via FFT's. With appropriate zero-padding of the vectors, radix-2 FFT's can be used for this computation. Various algorithms were used at each step in the overall computation of the spectrum-estimate, and the total computation times are presented and compared. The size of the mask is important in determining which algorithms are the most efficient in recovering the spectrum-estimate     

Investigation of stress behaviors and mechanism of void formation in sputtered TiSix films

We have investigated the stress behaviors and a mechanism of void formation in TiSi_x films during annealing. TiSi_x thin films were prepared by DC magnetron sputtering using a TiSi_2.1 target in the substrate temperature range of 200–500 °C. The as-deposited TiSi_x films at low substrate temperature (<300 °C) have an amorphous structure with low stress of 1×10⁸ dynes/cm². When the substrate temperature increases to 500 °C, the as-deposited TiSi_x film has a mixture of C49 and C54 TiSi₂ phase with stress of 8×10⁹ dynes/cm². No void was observed in the as-deposited TiSi_x film. Amorphous TiSi_x film transforms to C54 TiSi₂ phase with a random orientation of (311) and (040) after annealing at 750 °C. The C49 and C54 TiSi₂ mixture phase transforms to (040) preferred C54 TiSi₂ phase after annealing over 650 °C. By increasing substrate temperature, the transformation temperature for C54 TiSi₂ can be reduced, resulting in relieved stress of TiSi₂ film. The easy nucleation of the C54 phase was attributed to an avoidance of amorphous TiSi_x phase. We found that amorphous TiSi_x→C54 TiSi₂ transformation caused higher tensile stress of 2×10¹⁰ dynes/cm², resulting in more voids in the films, than C49→C54 transformation. It was observed that void formation was increased with thermal treatment. The high tensile stress caused by volume decreases in the silicide must be relieved to retard voids and cracks during C54 TiSi₂ formation.     

添加Ta2O5对NiCuZn铁氧体显微结构及磁性能的影响

采用固相反应法制备添加Ta₂O₅的NiCuZn铁氧体, 研究了不同Ta₂O₅含量对NiCuZn铁氧体显微结构, 静磁性能和高频损耗的影响。结果表明: Ta₂O₅具有细化NiCuZn铁氧体晶粒的作用, 可降低材料的烧结密度。随着Ta₂O₅含量的增加, 样品的饱和磁感应强度和起始磁导率单调减小, 矫顽力则逐渐增大, 截止频率逐渐升高, 而高频损耗呈先降低后增加的趋势, 其主导因素由剩余损耗逐渐过渡到磁滞损耗。当Ta₂O₅含量为0.12wt%时, 样品在3 MHz、10 mT、100℃下总损耗最小, 为139 mW/cm³, 其中磁滞损耗和剩余损耗分别为93 mW/cm³和46 mW/cm³。     

Widely extended new method for measuring the impedance (CxRx) at high frequencies withapplications

A method is described for the accurate measurement of the equivalent parallel capacitance C_x and resistance R_x of very high loss materials at high frequencies. The important characteristic of the method is its capability of measuring the value of C_x extending from 10^-2 to 10⁶ pF and R_x from 10 to 100×10⁶ Ω. The authors measure the humidity of tea leaves and rockwool by measuring the capacitance C_x of specimens irrespective of the value of R_x     

Preparation and activity evaluation of p-n junction photocatalyst NiO/TiO2

p–n Junction photocatalyst NiO/TiO₂ was prepared by sol–gel method using Ni(NO₃)₂·6H₂O and tetrabutyl titanate [Ti(OC₄H₉)₄] as the raw materials. The p–n junction photocatalyst NiO/TiO₂ was characterized by UV–vis diffuse reflection spectrum, X-ray powder diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The photocatalytic activity of the photocatalyst was evaluated by photocatalytic reduction of Cr₂O₇²⁻ and photocatalytic oxidation of rhodamine B. The results show that, for photocatalytic reduction of Cr₂O₇²⁻, the optimum percentage of doped-NiO is 0.5% (mole ratio of Ni/Ti). The photocatalytic activity of the p–n junction NiO/TiO₂ is much higher than that of TiO₂ on the photocatalytic reduction of Cr₂O₇²⁻. However, the photocatalytic activity of the p–n junction photocatalyst NiO/TiO₂ is much lower than that of TiO₂ on the photocatalytic oxidation of rhodamine B. Namely, the p–n junction photocatalyst NiO/TiO₂ has higher photocatalytic reduction activity, but lower photocatalytic oxidation activity. Effects of heat treatment on the photocatalytic activity of p–n junction photocatalyst NiO/TiO₂ were investigated. The mechanisms of influence on the photocatalytic activity were also discussed by the p–n junction principle.     

铝酸盐的组成对钡钨阴极性能的影响

采用液相共沉淀法制备了612铝酸盐(n(BaO):n(CaO):n(Al₂O₃)=6:1:2)前驱粉末, 在不同气氛(H₂、CO₂、N₂)、不同温度(1300℃、1400℃、1500℃)焙烧制备铝酸盐, 系统研究了不同工艺制备的铝酸盐对钡钨阴极性能的影响。结果表明: 前驱粉末的最佳焙烧工艺为: H₂气氛、1500℃, 可获得主相为Ba₅CaAl₄O₁₂的铝酸盐, 用其制备的钡钨阴极发射电流密度可达12.2 A/cm², 蒸发速率仅为1.09×10^-8 g/(cm²?s)。     

差分酉空时协作系统的多符号裁减自动球形译码

鉴于差分协作系统中多符号差分检测(multiple-symbol differential detection,MSDD)算法计算复杂度高的缺点,引入裁减自动球形译码(pruning automation sphere detection,PASD)算法来降低差分酉空时协作系统的检测复杂度.PASD算法是在球形译码的基础上,结合自动球形译码和裁减球形译码的思想而提出的.通过对扩展节点所消耗的复杂度和系统的误码率两方面来分析译码算法的性能.仿真分析表明,在差分酉空时协作系统中,PASD算法在误码性能几乎不变的情况下,复杂度曲线比球形译码(sphere detection,SD)算法收敛迅速.其中在分组长度N=5、信噪比SNR=15dB的情况下,PASD、SD算法的扩展点数分别为14.138 6、78.950 5,大大降低了系统的复杂度;同时,当SNR>16dB时,协作节点的增加有利于提高系统的误码性能,系统的复杂度性能并没有很大的损失.     

Optimization of YBCO surfaces of tunnel junctions

It is established that in YBa₂Cu₃O₇ films prepared by annealing amorphous oxide deposits, Ba segregation in the amorphous phase and YBCO decomposition after recrystallization are the major causes of surface degradation. The authors have grown films by entirely in-situ processing in which these effects are minimized. The films were epitaxially grown on (100) SrTiO ₃ substrates with the a-axis normal to the film plane. Both structural and chemical analyses indicated that they are homogeneous and have proper stoichiometry up to their surfaces. At 4.2 K, contact resistivities below 4×10^-10 ohm-cm² were obtained with gold overlayers. Junctions have been formed by depositing thin Au proximity layers over the YBCO films followed by MgO barriers and Nb counterelectrodes. In some of the junctions weak-link shorts were observed, providing unambiguous evidence that the growth procedures used can produce films that are superconducting up to their surfaces     

Elastic stiffness and thermal expansion coefficients of various refractory silicides and silicon nitride films

The elestic stiffness parameter E_f/(1−ν_f) and the thermal expansion coefficient _f were obtained for four different silicides (TiSi₂, TaSi₂, MoSi₂ and WSi₂) and for two different nitrides (chemically vapor-deposited Nitrox Si₃N₄ and r.f. plasma SiN) from stress-temperature measurements on identical films deposited on two different substrate materials. The values determined for _f and E_f/(1−ν_f) were quite similar for all silicides and averaged 15 ppm °C⁻¹ and 1.1 × 10¹² dyncm⁻² respectively. The thermal mismatch of these silicides is such that, once safely formed, the silicide film should be able to withstand high temperature processing steps without cracking. For the nitrides the values were essentially the same (approximately 1.5 ppm°C^-1), although the larger value of E_f/(1−ν_f) chemically vapor-deposited Si₃N₄ film (3.7 × 10¹² as opposed to 1.1 × 10¹² dyn cm^-2) indicates that it is somewhat stiffer than the SiN film.     

A new low-field determination of the proton gyromagnetic ratio inwater

The proton gyromagnetic ratio in water has been measured by the low field method using atomic magnetic resonance in ⁴He, a multicurrent solenoid and an induction method for the dimensional measurement of the solenoid. The result for air and vacuum environment is γ'_p (low, air)=2.67515451×10⁸ s^-1 T^-1 (0.18×10^-6), γ'_p (low, vacuum)=2.67515418×10⁸ s^-1 T^-1 (0.18×10^-6), based on the adopted values K_J-90=483597.9 GHz/V, R_K-90=25812.807 Ω, and measured values γ(⁴ He)/γ'_p=658.200556, γ(⁴He) (air)=1760.78819×10⁸ s^-1 T^-1 (0.18×10^-6), K_J-90, R_K-90     

GROUP TRANSFER AND DIMERIZATION PROCESSES OF C60(CN)2 UNDER ATMOSPHERIC PRESSURE IONIZATION CONDITIONS

Neutral and anionic C₆₀(CN)₂ were investigated with electrospray ionization (ESI) and atmospheric pressure chemical ionization (APCI) mass spectrometry. It was observed that its anions underwent cyano- group and oxygen transfer, and dimerization processes in ESI conditions to form C₆₀(CN)₃H^-, C₆₀(CN)₂(OH₂)^-, [C₆₀(CN)₃H]^-₂, [C₆₀(CN)₂(OH₂)]^-₂ and [(C₆₀)₂(CN)₂(OH)]^-. Meanwhile, neutral C₆₀(CN)₂, for which no signal was observed in ESIMS, showed a base peak corresponding to C₆₀(CN)₂Cl^- in APCIMS spectra with CHCl₃ used as solvent, while only a molecular ion peak corresponding to C₆₀(CN)^-₂ was observed for the toluene solution of neutral C₆₀(CN)₂ in the same conditions. Possible mechanisms for group transfer and dimerization were proposed based on these observations.     

Ammonia borane-based reactive mixture for trapping and converting carbon dioxide

Ammonia borane (NH₃BH₃) is a reducing agent, able to trap and convert carbon dioxide. In the present work, we used a reactive solid consisting of a mixture of 90 wt.% of NH₃BH₃ and 10 wt.% of palladium chloride, because the mixture reacts in a fast and exothermic way while releasing H₂ and generating catalytic Pd⁰. We took advantage of such reactivity to trap and convert CO₂ (7 bar), knowing besides that Pd⁰ is a CO₂ hydrogenation catalyst. The operation (i.e. stage 1) was effective: BNH polymers, and B−O, C=O, C−O, and C−H bonds (like in BOCH₃ and BOOCH groups) were identified. We then (in stage 2) pyrolyzed the as-obtained solid at 1250 °C and washed it with water. In doing so, we isolated cyclotriboric acid H₃B₃O₆ (stemming from B₂O₃ formed at 1250 °C), hexagonal boron nitride, and graphitic carbon. In conclusion, the stage 1 showed that CO₂ can be ‘trapped’ and converted, resulting in the formation of BOCH₃ and BOOCH groups (possible sources of methanol and formic acid), and the stage 2 showed that CO₂ transforms into graphitic carbon.     

Fast decoding of non-binary first order Reed-Muller codes

A minimum distance decoding algorithm for non-binary first order Reed-Muller codes is described. Suggested decoding is based on a generalization of the fast Hadamard transform to the non-binary case. We also propose a fast decoding algorithm for non-binary first order Reed-Muller codes with complexity proportional to the length of the code. This algorithm provides decoding within the limits guaranteed by the minimum distance of the code.Partly supported by the Guastallo Fellowship. This work was presented in part at the 9th International Symposium Applied Algebra, Algebraic Algorithms and Error-Correcting Codes, New Orleans, USA, October 1991     

锂离子筛前驱体Li4Mn5O12的制备及性能研究

吸附法是目前从低锂浓度的盐湖卤水中提取锂的最有前途的方法。采用EDTA-柠檬酸络合法制备了Li₄Mn₅O₁₂前驱体, 经酸浸脱锂后得到对Li⁺具有特殊选择性的锰氧化物锂离子筛。通过热重、XRD、SEM、FT-IR、化学组成、吸附动力学及共存金属离子的分配系数等手段对样品的晶相结构和Li⁺选择性吸附性能进行了研究。结果表明: 煅烧时间对Li₄Mn₅O₁₂前驱体生成有较大影响, 由400℃煅烧24 h所得的前驱体几乎为纯相的Li₄Mn₅O₁₂化合物, 经酸浸脱锂后的离子筛仍保持着与前驱体相同的尖晶石结构; 前驱体Li₄Mn₅O₁₂和离子筛MnO₂均为 200 nm左右的球状颗粒; 离子筛的最大吸附容量为43.1 mg/g, 并具有较好的Li⁺选择性。     

Normal metal, ohmic contacts to high-temperature superconducting YBa2Cu3O7-δ thin films suitable for multichip modules

Normal metal, ohmic contacts to high-temperature superconductor (HTSC) materials will be used to form via structures between HTSC interconnect levels, and also, substrate bonding pads in a superconducting multichip module (SMCM). Specific contact resistivities below 10⁻⁸ Ω cm² will be required for such contacts to control signal attenuation and local contact heating of the LN₂cooled SMCM. Previous work on normal metal/superconducting contacts has not focused on metallization schemes which will be stable during subsequent high-temperature processing. Metal contacts of gold, silver, and palladium were formed on superconducting thin films of YBa₂Cu₃O_7-δ via evaporation and sputtering through a shadow mask followed by annealing in various ambients and at several temperatures. Palladium contacts oxidized readily during anneal, and sputtered gold contacts required additional processing and exhibited higher specific contact resistivities. The best contacts were obtained by a controlled-cooling oxygen anneal of evaporated gold or silver, as indicated by normal-state specific contact resistivities of 3 × 10⁻⁵ Ω cm² and 4 × 10⁻⁵ Ω cm², respectively. This work differs from previously published results by describing contacts which required no extensive preparation of the HTSC surface and were stable to 700 °C, indicating these contacts would be compatible with subsequent high-temperature processing of the additional HTSC layers required in a multi-level SMCM.     

On the Evaporation of C60 in Vacuum and Inert Gases at Temperatures Between 830 K and 1050 K

The binary diffusion coefficient D_AB of subliming C₆₀ in He, N₂ and Ar gas has been determined at a gas pressure between 5 and 10 kPa. It resulted D_AB/(cm^2/s)=D_o(P_o/P_t(T/T_o)ⁿ as a function of the total pressure P_t of the vapor phase and temperature T. At T_o=273 K and P_o=1.0133×10⁵ P_a, the values D_o = (0.059±0.004) cm²/s, (0.011±0.003) cm²/s, (0.012±0.007) cm²/s, n = 1.77±0.06, 2.02±0.18, 1.77±0.37 were obtained for He, N₂, Ar and (830-1000) K, (800-1020) K, (875-1095) K, respectively. Only 40 wt% of the initial C₆₀ material yielded reliable D_AB where the vapor pressure of C₆₀ followed log₁₀(P/Pa) = -(8976±60)/T/K+(11.05±0.07) for T between 640 and 1055 K.     

La3+-Pr3+共掺杂纳米TiO2粉体的光催化性能

以钛酸四丁酯(TBT)为原料, 采用溶胶-凝胶法制备了纯TiO₂和La³⁺-Pr³⁺共掺杂复合粉体(La³⁺-Pr³⁺/TiO₂), 采用XRD、 UV-Vis和TEM等测试手段分析了在紫外光照射下, 以降解甲基橙为探针反应研究其可见光催化性能。结果显示: 所有样品均为锐钛矿相纳米TiO₂, 稀土元素镧和镨掺杂后TiO₂特征衍射峰宽化, 强度降低; 与纯TiO₂、 镧掺杂TiO₂与镨掺杂TiO₂相比, 光催化剂La³⁺-Pr³⁺共掺杂TiO₂颗粒的粒径更小, 比表面积更大, 光吸收边红移程度更显著; 与未掺杂和单一掺杂的TiO₂相比较, 共掺杂的TiO₂具有更高的可见光催化性能。当La³⁺与TiO₂和Pr³⁺与TiO₂的摩尔比分别为1.0%和0.2%时, 可见光催化性能最好。可见光催化性能的提高归因于镧和镨的协同作用。     

YVO4∶Eu3+,Bi3+红色荧光粉的水热合成及其荧光性能

以Y₂O₃、Eu₂O₃、Bi(NO₃)₃·H₂O、浓HNO₃、偏钒酸铵、氨水、无水乙醇和一缩二乙二醇为原料,采用聚乙烯吡咯烷酮(PVP)辅助水热法合成YVO₄: Eu³⁺, Bi³⁺纳米颗粒。使用X射线衍射(XRD)、扫描电镜(SEM)、红外光谱(IR)和荧光光谱(FL)等手段对产品进行了表征和分析。结果表明：合成的样品为YVO₄: Eu³⁺, Bi³⁺纳米颗粒,均具有四方晶相结构,其微结构随反应溶液的的pH值变化。YVO₄: Eu³⁺, Bi³⁺纳米颗粒在619 nm处有较强的红光发射(电偶极跃迁⁵D₀→⁷F₂),在594 nm有较弱的橙光发射(磁偶极跃迁⁵D₀→⁷F₁)。随着Eu/Bi比值的增大材料的荧光先增强后减弱,在Eu/Bi比值为5时样品的红光发射最强。溶液的pH值影响YVO₄: Eu³⁺, Bi³⁺纳米晶的发光强度,其中pH值为10时的样品其红光发射最强。并探讨了YVO₄: Eu³⁺, Bi³⁺纳米晶的发光机理。     

紫外光激发Ce3+掺YVO4蓝光发射性能研究

利用提拉法生长了YVO₄和掺2.0at% CeO₂(或Ce₂(CO₃)₃)的YVO₄: Ce³⁺晶体。样品的XRD测试表明Ce³⁺代替Y³⁺进入晶格, Ce³⁺的加入并没有影响YVO₄的晶格结构。XPS测试显示YVO₄: Ce³⁺晶体中Ce离子3d分裂为882.0、885.8、902.9、908.0和915.9 eV等5个峰, 峰位表明样品中铈离子是以Ce³⁺和Ce⁴⁺两种价态形式存在。YVO₄和YVO₄: Ce³⁺激发谱都呈现出260~360 nm宽带激发, 此激发带源于基质中VO₄^3-离子团的配体O到V的电荷迁移吸收。使用325 nm的紫外线激发时, 两种样品均可发出以440 nm 为中心的宽带蓝光,其中YVO₄发射峰应归属于VO₄^3-离子团中³T₂→¹A₁和³T₁→¹A₁跃迁; 而YVO₄: Ce³⁺的蓝光发射则来源于Ce³⁺的5d→4f 的跃迁。分析可知YVO₄: Ce³⁺中VO₄^3-的π轨道和Ce³⁺的电子波函数能有效地重叠, 使得VO₄^3-和Ce³⁺可通过交换作用有效地向Ce³⁺传递能量, 可大幅提高Ce³⁺的蓝光发射强度。实验结果显示YVO₄: Ce³⁺可作为UV-LED管芯激发的白光发光二极管用高亮度蓝色发光材料。     

Ca2+ doping effects in (K,Na, Li)(Nb0.8Ta0.2)O3 lead-free piezoelectric ceramics

Lead-free (K_0.5−x/2Na_0.5−x/2Li_x)(Nb_0.8Ta_0.2)O₃ (KNLNT) and (K_0.49−x/2Na_0.49−x/2- Li_xCa_0.01)(Nb_0.8Ta_0.2)O₃ (KNLNT-Ca) ceramics were prepared by a conventional ceramic processing. Structural analysis shows that the Ca²⁺ doping takes the A site of ABO₃ perovskite and decreases the phase transition temperature. Property measurements reveal that as a donor dopant, the Ca²⁺ doping results in higher room-temperature dielectric constant, lower dielectric loss, and lower mechanical quality factor. In addition, the Ca²⁺ doping does not change the positive piezoelectric coefficient d₃₃, but increases the converse piezoelectric coefficient d₃₃^* significantly. This is likely due to the increase in the relaxation, as well as the appearance of (Ca_Na/K^•--V_Na/K′) defect dipoles.