High-k Dielectric Double Gate Junctionless (DG-JL) MOSFET for Ultra Low Power Applications- Analytical Model

Silicon - This paper describes the impression of low-k/high-k dielectric on the performance of Double Gate Junction less (DG-JL) MOSFET. An analytical model of the threshold voltage of DG-JLFET has...     

Buried Metal Silicon-on-Insulator Junctionless Transistor for Low Power CMOS Logic Circuits

Silicon - This paper deals with an innovative structure of silicon-on-insulator junctionless transistor (SOIJLT) by incorporating a buried metal layer of proper work-function which creates the...     

Analytical Modeling of Surrounding Gate Junctionless MOSFET Using Finite Differentiation Method

Silicon - In this paper, a novel two-dimensional analytical model for threshold voltage on Dual Material Surrounding Gate Junctionless MOSFET is proposed. The analytical study is aimed at...     

Structural Innovation for Better MOSFET Performance Suitable for Low Power Application

Silicon - In this work, an innovative architecture of gate underlap junctionless double-gate MOSFET has been introduced with the idea of using triangular oxide layers to control the electric field...     

Subthreshold Current Modeling of Stacked Dielectric Triple Material Cylindrical Gate All Around (SD-TM-CGAA) Junctionless MOSFET for Low Power Applications

Silicon - Stacked Dielectric Triple Material Cylindrical Gate All Around (SD-TM-CGAA) Junctionless MOSFET has been explored for low power applications. This paper presents an analytical model of...     

Modified Core-Shell Double Gate Junctionless MOSFET with High ON-State and Low Leakage Currents

Silicon - In this proposed article, an investigation has been studied for low leakage current and high on-state current with heavily doping in source and drain region of Double Gate Junctionless...     

A Holistic Approach on Junctionless Dual Material Double Gate (DMDG) MOSFET with High k Gate Stack for Low Power Digital Applications

Silicon - The 2D analytical models for electrostatic potential, threshold voltage, subthreshold swing, Drain Induced Barrier Lowering (DIBL) and drain current of the Dual Material Double Gate...     

Investigation of Recessed Junctionless Double Gate MOSFET for Radio Frequency Applications

Silicon - Junctionless Metal Oxide Semiconductor Field-Effect Transistor (JL MOSFET) is one of the promising candidate to replace the junction based MOSFET for upcoming technology nodes....     

Gate Stacked (GS) Junctionless Nanotube MOSFET: Design and Analysis

Silicon - This paper presents Gate Stacked junctionless nanotube gate all around MOSFET (GS JL NT GAA MOSFET) and its investigation for low power circuit applications. In GS architecture, high-k...     

Design and Compressive Analysis of Junctionless Multigate FinFET Towards Low Power and High Frequency Applications

Silicon - Advances in microelectronics have enabled smaller technical nodes, lower threshold voltages, and greater working frequencies. Even though VLSI circuit performance and power consumption...     

Analytical Model of Double Gate Stacked Oxide Junctionless Transistor Considering Source/Drain Depletion Effects for CMOS Low Power Applications

This paper proposes a 2-D analytical model developed for Double Gate Junctionless Transistor with a SiO2/HfO2 stacked oxide structure. The model is solved     

Resistances and ESD Reliability Study of Core-Shell Channel Junctionless DG MOSFET

Silicon - In this article, an investigation has been done to address the resistance and reliability issues with Conventional Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor (Conv. JL...     

Design and Analysis of IGZO Based Junctionless Thin Film Transistor Using SOI Technology

Silicon - In this paper, IGZO based Junctionless Thin Film Transistor (IGZO JLTFT) using SOI technology is proposed with a channel length of 20 nm. The article also demonstrates a...     

Analysis of ONOFIC Technique Using SiGe Heterojunction Double Gate Vertical TFET for Low Power Applications

Silicon - In this paper, a new technique ONOFIC is proposed and implemented for designing the SiGe heterojunction 2D double gate Vertical t-shaped TFET as an inverter circuit for low power...     

低速非达西模型在试井分析中的应用

我国低渗透油田石油储量多,合理的开发指导才能有效的挖掘石油资源,在试井分析中低速非达西模型适用于渗透率比较低的储层,它可以准确的解释启动压力梯度,从而合理的指导油田开发,进一步提高试井资料在低渗透油田开发中的应用效率.     

Optimization of Gate all-around Junctionless Transistor Using Response Surface Methodology

Silicon - In this paper, a response surface methodology (RSM) –custom design based multiobjective optimization approach is proposed to optimize the electrical behaviour of n-type and p-type...     

Investigation of Power on Silicon Adiabatic for VLSI Applications

Silicon - In this article, a novel silicon adiabatic circuit is proposed for low power applications. To achieve efficient performance, the charging and the discharging diodes in the energy recovery...     

A 2-D Analytical Modeling of Dual Work Function Metal Gate MOSFET Using High-K Gate Dielectric with Enhanced RF/Analog Performance for Low Power Applications

A 2-dimensional electrostatic potential modeling of fully depleted channel, with high-k based dual work function double gate (DWFDG) MOSFET, has been devel     

Drain Current Modelling of Asymmetric Junctionless Dual Material Double Gate MOSFET with High K Gate Stack for Analog and RF Performance

Silicon - This paper presents the continuous 2D analytical modelling of electrostatic potential, threshold voltage (Vth), subthreshold swing, drain induced barrier lowering (DIBL) and drain current...     

Linearity Distortion Analysis of Junctionless Quadruple Gate MOSFETs for Analog Applications

Silicon - This paper examines a Junctionless quadruple gate (JLQG) MOSFET for analog and linearity distortion performance by numerically calculating transconductance and its higher order...