Interface Trap Charge Induced Threshold Voltage Modeling of WFE High-K SOI MOSFET

Silicon - The present endeavor attempts to develop an explicit threshold voltage model of linearly graded work function engineered Silicon-On-Insulator MOSFET considering the effects of localized...     

Exploring the Threshold Voltage Characteristics and Short Channel Behavior of Gate Engineered Front Gate Stack MOSFET with Graded Channel

Silicon - The present work focuses on formulating a detailed two dimensional analytical model of the proposed Triple Metal Stacked Front Gate Oxide Double Gate MOSFET with step graded channel...     

Study of Linearity Performance of Graded Channel Gate Stacks Double Gate MOSFET with Respect to High-K Oxide Thickness

In this paper a double gate MOSFET having non uniform channel doping with gate stack structure is explored to study the linearity analysis. The extractions     

Analytical Study of Effect of Channel Doping on Threshold Voltage of Metal Gate High-k SiGe MOSFET

The paper reports the analytical model for the analysis of the effects of channel doping on the threshold voltage. A silicon germanium p-MOSFET with high-k dielectric material along with a metal gate is used for the analysis. The presented model considers the short channel effects, junction depth, doping of the layers and metal gate work function. Results are validated with the 22 nm device geometry. The MOSFET with reduced channel doping reflects the corresponding reduction in the threshold voltage. The model can effectively analyze the SiGe p-MOSFET for device designing in the nanometer regime.     

Performance Assessment of Graded Channel Gate-Stack based Double Gate MOSFET for Bio-sensing Applications

Silicon - In this paper, the performance of the Asymmetric Gate Graded Channel Gate-Stack Double Gate (AG-GCGS-DG) MOSFET-based biosensor has been investigated for dielectric-modulated (DM)...     

Analog/RF Performance of Graded Channel Gate Stack Triple Material Double Gate Strained-Si MOSFET with Fixed Charges

Silicon - The performances of analog/RF parameters of a graded channel gate stack triple material double gate (GCGS-TMDG) strained-Silicon (s-Si) MOSFET with fixed charges are analyzed by using...     

Analytical Modeling of Threshold Voltage for Dual-Metal Double-Gate Gate-All-Around (DM-DG-GAA) MOSFET

Silicon - This paper presents, analytical modeling of surface potential,threshold voltage and DIBL for a Dual-Metal Double-Gate Gate-All-Around (DM-DG-GAA) MOSFET considering the parabolic...     

A Two-Dimensional (2D) Analytical Modeling and Improved Short Channel Performance of Graded-Channel Gate-Stack (GCGS) Dual-Material Double-Gate (DMDG) MOSFET

A Double-gate (DG) metal-oxide-semiconductor field effect transistor (MOSFET) is emerging device architecture in sub-nanometer regime. The performance of DG MOSFET can be ameliorated by gate and channel engineering. The concept of graded-channel gate-stack (GCGS) and dual-material (DM) are incorporated in DG MOSFET. A two-dimensional (2D) analytical surface potential model for GCGS DMDG MOSFET is developed based on the solution of Poisson’s equations with appropriate boundary conditions. It has been found that analytically modeled data is in good degree of agreement with numerically simulated data. The combination of both DM and GC concept introduces a step variation in potential profile at the junction of both materials in channel region and ameliorates the short channel effects (SCEs). A suppressed subthreshold swing (SS) and drain induced barrier lowering (DIBL) has been observed in the device due to an elevated average velocity of carrier and reduced drain field effect by the use of DM and GC with GS. Further, analog/RF characteristics such as transconductance generation factor (TGF), cut-off frequency (f_T) and transconductance frequency product (TFP) have been examined with different GS high-k dielectrics. The numerically simulated data has been extracted using 2D ATLAS device simulator.     

Analysis of Underlap Strained Silicon on Insulator MOSFET for Accurate and Compact Modeling

Silicon - Recently, transistors with an underlapped gate structure have been widely studied to overcome several challenges associated with nanoscale devices. In this work, underlap region is...     

Effect of SiC on Mechanical and Microstructural Characteristics of Al Based Functionally Graded Material

Silicon - In this study, an attempt was made to enhance the mechanical and microstructural properties of aluminium (Al) based FGM with the influence of silicon carbide (SiC) elements. The five...     

Influence of Threshold Voltage Performance Analysis on Dual Halo Gate Stacked Triple Material Dual Gate TFET for Ultra Low Power Applications

Silicon - In this article, a two dimensional (2-D) threshold voltage modeling based gate and channel engineering are developed analytically for Dual Halo Gate Stacked Triple Material Dual Gate...     

A Novel Approach to Model Threshold Voltage and Subthreshold Current of Graded-Doped Junctionless-Gate-All-Around (GD-JL-GAA) MOSFETs

Silicon - This present article interprets the analytical models of central channel potential, the threshold voltage, and subthreshold current for Graded-Doped Junctionless-Gate-All-Around...     

化工工程设备布道与管道材料的优化设计

化工工程是促进我国发展的重要工程之一,因此化工工程的良好发展很关键。影响化工工程质量及水平的因素有很多,设计是其中的一个关键性因素。化工工程是一个大型工程,其设计包含多个方面,每一项设计对化工工程都有极其重要的影响,对化工工程设备布道与管道材料优化设计方面进行分析,以期为化工工程的发展提供一定的理论借鉴作用。     

渐变型聚合物光纤共挤扩散过程的数学模型

基于流变学原理和质量传递原理的分析，建立了一个能够描述渐变型聚合物光纤（GIPOF）共挤扩散制备过程的数学模型。该模型采用基于温度和掺杂剂浓度修正的Carreau黏度方程，利用计算流体动力学软件Fluent模拟求解出拉丝后光纤折射率分布。以聚甲基丙烯酸甲酯为芯皮层原料、苯硫醚为掺杂剂制备了GIPOF，并通过聚焦法测得光纤折射率分布。模拟结果与实验结果基本相符，表明该模型可用来预测和控制光纤折射率分布情况。     

Effect of Silicon Carbide Weight Percentage and Number of Layers on Microstructural and Mechanical Properties of Al7075/SiC Functionally Graded Material

Silicon - In this research, four different types of Al7075/SiC functionally graded materials (FGMs) are produced by varying the number of layers and weight percentages of silicon carbide(SiC). Each...     

Drain Current Modelling of Asymmetric Junctionless Dual Material Double Gate MOSFET with High K Gate Stack for Analog and RF Performance

Silicon - This paper presents the continuous 2D analytical modelling of electrostatic potential, threshold voltage (Vth), subthreshold swing, drain induced barrier lowering (DIBL) and drain current...     

橡胶材料疲劳试验机的设计和疲劳寿命模型的建立

进行橡胶材料疲劳试验机的设计和疲劳寿命模型的建立。基于疲劳裂纹扩展和撕裂能理论以及依据GB/T1688—2008研制的橡胶材料疲劳试验机由执行机构、数据采集系统和控制系统构成,用于橡胶材料疲劳试验和破坏试验,可以分别测得橡胶材料裂纹扩展速度及撕裂能、破坏撕裂能。采用Yeoh模型作为本构模型,以有限元仿真分析计算不同应变下的撕裂能,得到裂纹扩展速度与撕裂能关系,而建立的橡胶材料疲劳寿命模型可以用于预测组成复杂的橡胶材料的疲劳寿命。     

橡胶材料超弹性本构模型选取及参数确定概述

概述橡胶材料超弹性本构模型的选取及参数确定。橡胶材料超弹性本构模型选取取决于材料试验、有限元分析适应性和橡胶制品力学计算精度三方面,模型参数确定方法主要有基于简单材料试验的本构理论计算法、基于完整材料试验的数值拟合法、根据已有橡胶材料特性的识别法和先进材料参数试验法。基于完整材料试验的数值拟合法和先进材料参数试验法是确定橡胶材料超弹性本构模型参数的发展方向。