Analog and RF Performance Evaluation of Junctionless Accumulation Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET

Silicon - This work presents the analog and RF performance evaluation of Junctionless Accumulation Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET, and the results acquired have been compared...     

Performance Assessment of Graded Channel Gate-Stack based Double Gate MOSFET for Bio-sensing Applications

Silicon - In this paper, the performance of the Asymmetric Gate Graded Channel Gate-Stack Double Gate (AG-GCGS-DG) MOSFET-based biosensor has been investigated for dielectric-modulated (DM)...     

Influence of Threshold Voltage Performance Analysis on Dual Halo Gate Stacked Triple Material Dual Gate TFET for Ultra Low Power Applications

Silicon - In this article, a two dimensional (2-D) threshold voltage modeling based gate and channel engineering are developed analytically for Dual Halo Gate Stacked Triple Material Dual Gate...     

Design of Dual-Gate P-type IMOS Based Industrial Purpose Pressure Sensor

Silicon - In this treatise, we have proposed a Single Material Gate–Dual Gate Impact Ionization Metal Oxide Semiconductor (SMG DG-IMOS) based Pressure Sensor. The pressure sensor has the most...     

Exploring the Threshold Voltage Characteristics and Short Channel Behavior of Gate Engineered Front Gate Stack MOSFET with Graded Channel

Silicon - The present work focuses on formulating a detailed two dimensional analytical model of the proposed Triple Metal Stacked Front Gate Oxide Double Gate MOSFET with step graded channel...     

Influence of Symmetric Underlap on Analog,RF and Power Applications for DG AlGaN/GaN MOS-HEMT

Silicon - An Underlap Double Gate (U-DG) Symmetric Heterojunction AlGaN/GaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) with varying source and drain underlap lengths...     

Novel Asymmetric Recessed-Gate/Source Architecture Advancement of Dual-Metal-Gate SiGe/Si Dopingless Nanowire-TFET for Low-Voltage Performance Optimization

Silicon - A dopingless vertical Nanowire (NW) Tunnel Field Effect Transistor TFET structure has been designed using techniques such as Dual-Metal Gate (DMG), Heteromaterial Channel (HmC) and...     

Study of Effective Graded Oxide Capacitance and Length Variation on Analog,RF and Power Performances of Dual Gate Underlap MOS-HEMT

Silicon - Comparative analysis of a Symmetric Heterojunction Underlap Double Gate (U-DG) GaN/AlGaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) on varying the effective...     

Impact of Different Gate Dielectric Materials on Analog/RF Performance of Dielectric-Pocket Double Gate-All-Around (DP − DGAA) MOSFETs

Silicon - This paper investigates the performance analysis of Dielectric Pocket (DP)-Double Gate All Around (DGAA) with three different gate dielectric materials and analyzes its performance. The...     

Enhancement and Modeling of Drain Current in Negative Capacitance Double Gate TFET

Silicon - The drain current improvement in a Negative Capacitance Double Gate Tunnel Field Effect Transistor (NC-DG TFET) with the help of Heterojunction (HJ) at the source-channel region is...     

Performance Analysis of Tunnel FET Based Ring Oscillator Using Sentaurus TCAD

Silicon - A detailed Sentaurus TCAD simulation based study for Silicon Double Gate Tunnel Field Effect Transistor (Si-DG TFET) based Ring Oscillator (RO) is presented in this work. Two different...     

Design and Investigation of Double Gate Field Effect Transistor Based H2 Gas Sensor Using Ultra-Thin Molybdenum Disulfide

Silicon - In this article, a low-power hydrogen (H2) gas sensor has been proposed using a two-dimensional (2D) material based Double Gate Field Effect Transistor (2D-FET). It is imperative to...     

Subthreshold Current Modeling of Stacked Dielectric Triple Material Cylindrical Gate All Around (SD-TM-CGAA) Junctionless MOSFET for Low Power Applications

Silicon - Stacked Dielectric Triple Material Cylindrical Gate All Around (SD-TM-CGAA) Junctionless MOSFET has been explored for low power applications. This paper presents an analytical model of...     

Design Considerations and Capacitance Dependent Parametric Assessment of Gate Metal Engineered SiNW MOSFET for ULSI Switching Applications

Silicon - This work investigates design consideration of Gate Electrode Workfunction Engineered (GEWE) silicon nanowire MOSFET at room temperature. It is perceived from the results that the...     

Analysis of Sub-Threshold Adiabatic Logic Model Using Junctionless MOSFET for Low Power Application

Silicon - In this paper Junctionless Double Gate MOSFET based Efficient Charge Recovery Logic (JL-ECRL) circuits have been driven in sub-threshold regime for the first time in literature to...     

Design and Simulation of Symmetrical Dual Gate on Drain Side with Overlapped and Underlapped Regions of TFET

Silicon - A unique Symmetrical Dual Metal Gate Extended on drain side with overlapped and underlapped three regions of Tunnel Field Effect Transistor (DG-ED-TFET) have been designed and...     

Design and Optimization of Dual Material Gate Junctionless FinFET Using Dimensional Effect,Gate Oxide and Workfunction Engineering at 7 nm Technology Node

Silicon - In this paper, we designed and analyzed the performance of Dual Material Gate Junctionless FinFET(DMG JLFinFET) using gate engineering with high-k dielectrics for nanoscale applications....     

Charge Density Based Small Signal Modeling for InSb/AlInSb Asymmetric Double Gate Silicon Substrate HEMT for High Frequency Applications

Silicon - This paper proposes the Asymmetric Double Gate Silicon Substrate HEMT (ADG-Si-HEMT) to study the carrier concentration and intrinsic small signal parameters of the InSb/AlInSb silicon...     

Analytical Modeling of Sensitivity Parameters Influenced by Practically Feasible Arrangement of Bio-Molecules in Dielectric Modulated FET Biosensor

Silicon - In this paper, analytical modeling of a Dielectric Modulated Double Gate Field Effect Transistor (DM-DGFET) for biosensing application is presented with extensive data analysis. Firstly,...     

Influence of Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET for Improved Analog/RF Performance

Silicon - This paper investigates the RF Stability performance of the Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET Ge(SRC)-DH-DD-TM-SG-TFET using 3D -...